MOSFET – Dual, P-Channel, POWERTRENCH

POWERTRENCH

30 V

FDS4935A

General Description

T h i s P −C h a n n e l M O S F E T i s a r u g g e d g a t e v e r s i o n of ON Semiconductor’s advanced POWERTRENCH

process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V).

Features

• −7 A, −30 V. R

= 23 m W @ V

= −10 V R

= 35 m W @ V

= −4.5 V

• Low Gate Charge (15 nC Typical)

• Fast Switching Speed

• High Performance Trench Technology for Extremely Low R

• High Power and Current Handling Capability

• This is a Pb−Free Device

• Power Management

• Load Switch

• Battery Protection

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)

Symbol Parameter Ratings Unit

V_DS Drain−Source Voltage −30 V

V_GSS Gate−Source Voltage ±20 V

ID Drain Current− Continuous (Note 1a)

− Pulsed −7

−30 A

P_D Power Dissipation for Dual Operation 2 W P_D Power Dissipation (Note 1a)

for Single Operation (Note 1b) (Note 1c)

1.61 0.9

W

TJ, TSTG Operating and Storage Junction

Temperature Range −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Ratings Unit

R_qJA Thermal Resistance, Junction to

Ambient (Note 1a) 78 °C/W

R_qJC Thermal Resistance, Junction to

Case (Note 1) 40 °C/W

www.onsemi.com

SOIC8 CASE 751EB MARKING DIAGRAM

S2 D2

G2S1 D1D1

D2

G1

FDS4935A = Specific Device Code

A = Assembly Site

L = Wafer Lot Number

YW = Assembly Start Week ELECTRICAL CONNECTION

8 1

7 2

6 3

5 4

FDS4935A ALYW

See detailed ordering and shipping information on page 5 of this data sheet.

ORDERING INFORMATION Q1

Q2

ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = −250 mA −30 − − V

DBV_DSS DT_J

Breakdown Voltage Temperature Coefficient I_D = −250 mA, Referenced to 25°C − −24 − mV/°C

IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V − − −10 mA

IGSSF Gate−Body Leakage Current, Forward VGS = −20 V, VDS = 0 V − − −100 nA

IGSSR Gate−Body Leakage Current, Reverse VGS = 20 V, VDS = 0 V − − 100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage V_DS = V_GS, I_D = −250 mA −1 −1.6 −3 V

DV_GS(th) DTJ

Gate Threshold Voltage Temperature Coefficient I_D = −250 mA, Referenced to 25°C − 4.4 − mV/°C

R_DS(on) Static Drain−Source On−Resistance V_GS = −10 V, I_D = −7 A VGS = −4.5 V, ID = −5.5 A

V_GS = −10 V, I_D = −7 A, T_J = 125°C

−−

−

1928 26

2335 34

mW

ID(on) On−State drain Current VGS = −10 V, VDS = −5 V −30 − − A

gFS Forward Transconductance VDS = −5 V, ID = −7 A − 19 − S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance V_DS = −15 V, V_GS = 0 V

f = 1.0 MHz − 1233 − pF

Coss Output Capacitance − 311 − pF

Crss Reverse Transfer Capacitance − 152 − pF

SWITCHING CHARACTERISTICS (Note 2)

td(on) Turn−On Delay Time VDD = −15 V, ID = −1 A

V_GS = −10 V, R_GEN = 6 W − 13 23 ns

tr Turn−On Rise Time − 10 20 ns

td(off) Turn−Off Delay Time − 48 77 ns

t_f Turn−Off Fall Time − 25 40 ns

Q_g Total Gate Charge VDS = −15 V, ID = −7 A

V_GS = −5 V − 15 21 nC

Q_gs Gate−Source Charge − 4.4 − nC

Q_gd Gate−Drain Charge − 4.5 − nC

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S Maximum Continuous Drain−Source Diode Forward Current − − −2.1 A

V_SD Drain−Source Diode Forward Voltage V_GS = 0 V, I_S = −2.1 A (Note 2) − −0.75 −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R_qJA is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_qJC is guaranteed by design while R_qCA is determined by the user’s board design.

a) 78°C/W when mounted on a 0.5 in² pad of 2 oz. Copper.

b) 125°C/W when mounted on a 0.02 in² pad of 2 oz. copper.

c) 135°C/W when mounted on a minimum pad.

TYPICAL CHARACTERISTICS

0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4

0.0001 0.001 0.01 0.1 10 100

−6.0 V

0.6 0.8 1 1.2 1.4 1.6

−V_DS, DRAIN TO SOURCE VOLTAGE (V)

VGS = −10 V

0 1 2 3 4

0 10 20 30 50

40

−ID, DRAIN CURRENT (A)

−I_D, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE

0 10 20 30 40 50

0 25 50 75 100 125 150

−25

−50

RDS(ON), ON−RESISTANCE (W)−IS, REVERSE DRAIN CURRENT (A)

−ID, DRAIN CURRENT (A)

T_J, JUNCTION TEMPERATURE (°C) −V_GS, GATE TO SOURCE VOLTAGE (V)

−VSD, BODY DIODE FORWARD VOLTAGE (V)

−VGS, GATE TO SOURCE VOLTAGE (V)

1

2 4 6 8 10

1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4

Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage

Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance Variation with Gate−to−Source Voltage

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature

−4.0 V

−3.0 V

−3.5 V

−4.5 V

−5.0 V

5

−10 V −5.0 V

−4.0 V −4.5 V

−6.0 V VGS = −3.5 V

VGS = −10 V ID = −7 A

RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE

0 0.02 0.04 0.06 0.08

I_D = −3.5 A

TA= 25°C

TA = 125°C

0 10 20 30 40 50

V_DS = −5 V

TA = −55°C 25°C

125°C

VGS = 0 V

T_A = 125°C

25°C

−55°C

TYPICAL CHARACTERISTICS

0 10 20 30 40 50

0.0001 0.01 0.1 1 10 100

CAPACITANCE (pF)

0 2 4 6 8 10

0.01 0.1 1 10 100

Q_g, GATE CHARGE (nC) −V_DS, DRAIN TO SOURCE VOLTAGE (V)

−V_DS, DRAIN−SOURCE VOLTAGE (V)

−ID, DRAIN CURRENT (A)−VGS, GATE−SOURCE VOLTAGE (V)r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

0 4 8 12 16 20 24

0 1 10 100

0 5 10 15 20 25 30

0.001 0.01 0.1 1 10 100

Figure 7. Gate−Charge Characteristics Figure 8. Capacitance Characteristics

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

−10 V

−15 V ID = −8.8 A V_DS = −5 V

0 200 400 600 800 1000 1200 1400 1600 1800

2000 f = 1 MHz

VGS = 0 V

CISS

C_OSS CRSS

DC 10 s

1 s 100 ms

10 ms 1 ms

R^DS(ON) LIMIT 100 ms

VGS = −10 V SINGLE PULSE R_qJA = 135°C/W TA = 25°C

SINGLE PULSE R_qJA = 135°C/W TA = 25°C

t1, TIME (sec) P(pk), PEAK TRANSIENT POWER (W)

0.001 0.01 0.1 1

Single Pulse 0.1

0.02 0.01

P(pk) t1

t2

0.2 D = 0.5

0.05

R_qJA (t) = r(t) * R_qJA R_qJA= 135°C/W

T_J − T_A = P * R_qJA (t) Duty Cycle, D = t₁ / t₂

0.001 1000

ORDERING INFORMATION

Device Marking Device Package Type Reel Size Tape Width Shipping^†

FDS4935A FDS4935A SOIC8

(Pb−Free) 13” 12 mm 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

SOIC8 CASE 751EB

ISSUE A

DATE 24 AUG 2017

98AON13735G

DOCUMENT NUMBER: Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION