FDP52N20 N‐Channel UniFET MOSFET

N‐Channel UniFET MOSFET

200 V, 52 A, 49 m W

Description

UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features

• R DS(on) = 41 mW (Typ.) @ V GS = 10 V, I D = 26 A

• Low Gate Charge (Typ. 49 nC)

• ^{Low C} RSS (Typ. 66 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant Applications

• PDP TV

• ^Lighting

• Uninterruptible Power Supply

• AC−DC Power Supply

TO−220 CASE 340AT

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION www.onsemi.com

D

S G

G D S

ABSOLUTE MAXIMUM RATINGS (T

= 25°C, Unless otherwise specified)

Symbol Parameter Value Unit

V

Drain to Source Voltage 200 V

V

Gate to Source Voltage ±30 V

I

Drain Current Continuous (T

= 25°C) 52 A

Continuous (T

= 100°C) 33

I

Drain Current Pulsed (Note 1) 208 A

E

Single Pulsed Avalanche Energy (Note 2) 2520 mJ

I

Avalanche Current (Note 1) 52 A

E

Repetitive Avalanche Energy (Note 1) 35.7 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

Power Dissipation (T

= 25°C) 357 W

Derate Above 25°C 2.86 W/°C

T

, T

Operating and Storage Temperature Range −55 to +150 °C

T

Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 1.4 mH, I

= 52 A, V

= 50 V, R

= 25 W, starting T

= 25°C.

3. I

≤ 52 A, di/dt ≤ 200 A/ m s, V

≤ BV

, starting T

= 25 ° C.

4. Essentially independent of operating temperature typical characteristics.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R

Thermal Resistance, Junction to Case, Max. 0.35 _C/W

R

Thermal Resistance, Junction to Ambient, Max. 62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity

FDP52N20 FDP52N20 TO−220 Tube N/A N/A 50 Units

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BV

Drain to Source Breakdown Voltage V

= 0 V, I

= 250 mA, T

= 25_C 200 − − V DBV

/DT

Breakdown Voltage Temperature

Coefficient I

= 250 mA, Referenced to 25_C − 0.2 − V/_C

I

Zero Gate Voltage Drain Current V

= 200 V, V

= 0 V − − 1 mA

V

= 160 V, T

= 125 _ C − − 10

I

Gate to Body Leakage Current V

= ±30 V, V

= 0 V − − ±100 nA

ON CHARACTERISTICS

V

Gate Threshold Voltage V

= V

, I

= 250 m A 3.0 − 5.0 V

R

Static Drain to Source On Resistance V

= 10 V, I

= 26 A − 0.041 0.049 W

g

Forward Transconductance V

= 40 V, I

= 26 A − 35 − S

DYNAMIC CHARACTERISTICS

C

Input Capacitance V

= 25 V, V

= 0 V, f = 1 MHz − 2230 2900 pF

C

Output Capacitance − 540 700 pF

C

Reverse Transfer Capacitance − 66 100 pF

Q

Total Gate Charge at 10 V V

= 160 V, I

= 52 A, V

= 10 V

(Note 5) − 49 63 nC

Q

Gate to Source Gate Charge − 19 − nC

Q

Gate to Drain “Miller” Charge − 24 − nC

SWITCHING CHARACTERISTICS

t

Turn-On Delay Time V

= 100 V, I

= 20 A,

R

= 25 W (Note 5) − 53 115 ns

t

Turn-On Rise Time − 175 359 ns

t

Turn-Off Delay Time − 48 107 ns

t

Turn-Off Fall Time − 29 68 ns

DRAIN−SOURCE DIODE CHARACTERISTICS

I

Maximum Continuous Drain to Source Diode Forward Current − − 52 A

I

Maximum Pulsed Drain to Source Diode Forward Current − − 204 A

V

Drain to Source Diode Forward

Voltage V

= 0 V, I

= 52 A − − 1.5 V

t

Reverse Recovery Time V

= 0 V, I

= 52 A,

dI

/dt = 100 A/ m s − 162 − ns

Q

Reverse Recovery Charge − 1.3 − m C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Essentially independent of operating temperature typical characteristics.

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

10^{−1 0} 10¹

10⁻¹ 10⁰ 10¹

* Notes : 1. 250μs Pulse Test 2. TC = 25°C

I

, Drain Current [A]

10

V

, Drain−Source Voltage [V]

2 6 8 10 12

10⁰ 10¹ 10²

150°C

25°C

−55°C

* Notes : 1. V_DS = 40V 2. 250μs Pulse Test

I

, Drain Current [A]

V

, Gate−Source Voltage [V]

0 25 50 75 100 125 150

0.00 0.02 0.04 0.06 0.08 0.10 0.12

V_GS = 20V V_GS = 10V

* Note : TJ = 25°C

R

[

], Drain

Source On

Resistance

I

, Drain Current [A]

10⁰0.2 10¹ 10²

* Notes : 1. VGS = 0V 2. 250μs Pulse Test 25

I

, Reverse Drain Current [A]

V

, Source−Drain voltage [V]

10^{−1 0} 10¹

0 1000 2000 3000 4000 5000 6000

C_iss = C_gs + C_gd (C_ds = shorted) C_oss = C_ds + C_gd Crss = Cgd

* Note ; 1. V_GS = 0 V 2. f = 1 MHz C_rss

C_oss C_iss

Capacitances [pF]

10

V , Drain−Source Voltage [V]

0 10 20 40

0 2 4 6 8 10 12

V_DS = 100V V_DS = 40V V_DS = 160V

* Note : I_D = 52A

V

, Gate

Source Voltage [V]

Q , Total Gate Charge [nC]

VGS

Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

150°C

°C Bottom:

4

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

30 50 60

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

Figure 9. Maximum Safe Operation Area Figure 10. Maximum Drain Current

10⁻² 10⁻¹

* Notes :

1. ZqJC(t) = 0.35 ⁰C/W Max.

2. Duty Factor, D=t₁/t₂ 3. T_JM − T_C = P_DM * Z_qJC(t) single pulse

D=0.5

0.02 0.2

0.05 0.1

0.01

t1

PDM

t₂ ZqJC(t), Thermal Response

[

25 50 75 100 125 150

0 10 20 30 40 50 60

I

, Drain Current [A]

T

, Case Temperature [

C]

10^{0 1} 10²

10⁻² 10⁻¹ 10⁰ 10¹ 10² 10³

100 ms 1 ms

10 μs

DC 10 ms

100 μs

Operation in This Area is Limited by R_DS(on)

* Notes:

1. TC = 25°C 2. T_J = 150°C 3. Single Pulse

I

, Drain Current [A]

10

V

, Drain−Source Voltage [V]

0.8−100 0.9 1.0 1.1 1.2

* Notes : 1. V_GS = 0 V 2. I_D = 250μA

BV

, (Normalized) Drain

Source Breakdown Voltage

T

, Junction Temperature [

C]

−100 −50 0 50 100 150 200

0.0 0.5 1.0 1.5 2.0 2.5 3.0

* Notes : 1. V_GS = 10 V 2. I_D = 26 A

R

, (Normalized) Drain

Source On

Resistance

T

, Junction Temperature [

C]

−50 0 50 100 150 200

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms V

V

10%

90%

t_d(on) t_r

t_on t_off

t_d(off) t_f

V

10V

V

R

DUT R

V

V

V

10%

90%

t_d(on) t_r

t_on t_off

t_d(off) t_f

V

10V

V

R

DUT R

V

V

V

I_G = const.

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

V

+

_

Driver R

Same Type as DUT

V

Sdv/dt controlled by R

SI

controlled by pulse period

V

L

I

V

10V ( Driver )

I

( DUT )

V

( DUT )

V

Body Diode V

I

, Body Diode Forward Current

Body Diode Reverse Current I

Body Diode Recovery dv/dt di/dt D =

V

+

_

G

Same Type

as DUT

V

G

V

LL

SD

V

10V ( Driver )

I

( DUT )

V

( DUT )

V

V

I

I

di/dt D = Gate Pulse Width

Gate Pulse Period

D =

TO−220−3LD CASE 340AT

ISSUE A

DATE 03 OCT 2017 Scale 1:1

98AON13818G

DOCUMENT NUMBER:

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems