© Semiconductor Components Industries, LLC, 1996
May, 2019 − Rev. 11 1 Publication Order Number:
MGSF1N03LT1/D
MOSFET – Single, N-Channel, SOT-23
30 V, 2.1 A
These miniature surface mount MOSFETs low R
DS(on)assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
• Low R
DS(on)Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• MV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJL Steady
State TA = 25°C ID 2.1 A
TA = 85°C 1.5
Power Dissipation
RqJL Steady
State TA = 25°C PD 0.69 W
Continuous Drain
Current (Note 1) Steady
State TA = 25°C ID 1.6 A
TA = 85°C 1.2
Power Dissipation
(Note 1) TA = 25°C PD 0.42 W
Pulsed Drain Current tp = 10 ms IDM 6.0 A ESD Capability
(Note 3) C = 100 pF,
RS = 1500 W ESD 125 V
Operating Junction and Storage Temperature TJ,TSTG −55 to 150 °C
Source Current (Body Diode) IS 2.1 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 sec) TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Foot − Steady State RqJL 180 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 300
Junction−to−Ambient − t < 10 s (Note 1) RqJA 250 Junction−to−Ambient − Steady State (Note 2) RqJA 400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 650 mm2, 1 oz. Cu pad size.
2. Surface−mounted on FR4 board using 50 mm2, 1 oz. Cu pad size.
3. ESD Rating Information: HBM Class 0.
G
D
S
Device Package Shipping† ORDERING INFORMATION 30 V
125 mW @ 4.5 V 80 mW @ 10 V
RDS(on) TYP
2.1 A ID MAX V(BR)DSS
SOT−23 CASE 318 STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
N3 = Specific Device Code M = Date Code*
G = Pb−Free Package 3
1
Drain
Gate1 2
Source N−Channel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
MGSF1N03LT3G SOT−23 (Pb−Free)
N3 M G G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary depending upon manufacturing location.
MGSF1N03LT1G SOT−23
Pb−Free 3000 / Tape &
Reel 10000 / Tape &
Reel MVGSF1N03LT1G SOT−23
(Pb−Free) 3000 / Tape &
Reel www.onsemi.com
www.onsemi.com 2
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mAdc) V(BR)DSS 30 − − Vdc
Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
− −
− 1.0
10
mAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc
ON CHARACTERISTICS (Note 4) Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc
Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
−
− 0.08
0.125 0.10 0.145
W
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 5.0 Vdc) Ciss − 140 − pF
Output Capacitance (VDS = 5.0 Vdc) Coss − 100 −
Transfer Capacitance (VDG = 5.0 Vdc) Crss − 40 −
SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time
(VDD = 15Vdc, ID = 1.0 Adc, RL = 50 W)
td(on) − 2.5 − ns
Rise Time tr − 1.0 −
Turn−Off Delay Time td(off) − 16 −
Fall Time tf − 8.0 −
Gate Charge (See Figure 6) QT − 6000 − pC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current IS − − 0.6 A
Pulsed Current ISM − − 0.75
Forward Voltage (Note 5) VSD − 0.8 − V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
www.onsemi.com 3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics 0
1.5 2
0.5 1
1 1.5 2 2.5 3
I D
, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 10 V
TJ = 150°C 25°C - 55°C
3.5 2.5
0 2 4 10
0 1.5 2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) I D
, DRAIN CURRENT (AMPS)
6 0.5
8 1
2.5
3.25 V
2.75 V VGS = 3.75 V
2.5 V 3.0 V 3.5 V
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.4 0.6 0.8
0.04 0.14
ID, DRAIN CURRENT (AMPS)
25°C VGS = 4.5 V
0.09
0.1 0.3 0.5 0.7
150°C
-55°C
0.9 1 0.24
0.19
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.4 0.8 1.2 1.6
0.04 0.1 0.12
ID, DRAIN CURRENT (AMPS) VGS = 10 V
0.08 0.06 0.14
0.2 0.6 1 1.4 1.8 2
25°C 150°C
-55°C 0.16
www.onsemi.com 4
Figure 5. On−Resistance Variation with Temperature
0.001 0.1 1
Figure 6. Gate Charge
VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage I D
, DIODE CURRENT (AMPS)
0 0.1 0.2 0.3 0.9
0.01
0.4
Figure 8. Capacitance VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
C, CAPACITANCE (pF)
0 4 8 12 16 20
Ciss Coss Crss 350
50
VGS = 0 V f = 1 MHz TJ = 25°C
0.5 0.6 0.7 0.8 0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
0 0.8
TJ, JUNCTION TEMPERATURE (°C) VGS = 10 V ID = 2 A
-55 0 50 100 150
0.2 0.4 0.6 1 1.2 1.4 1.6
VGS = 4.5 V ID = 1 A
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0 10
6
2 0
QT, TOTAL GATE CHARGE (pC) 8
4
1000 6000
VDS = 24 V TJ = 25°C
2000
ID = 2.0 A
3000 4000 5000
TJ = 150°C 25°C -55°C 1.8
-25 25 75 125
100 150 200 250 300
www.onsemi.com 5
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 9. Maximum Rated Forward Biased Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100 10
1 0.010.1
0.1 1 10
ID, DRAIN CURRENT (A)
10 ms 100 ms
1 ms 10 ms
dc 0 V < VGS < 10 V
Single Pulse
TJ = 150°C, TC = 25°C RDS(on) Limit
Thermal Limit Package Limit
1000
0.1 1 10 100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.1 0.2
0.02 D = 0.5
0.05
0.01
SINGLE PULSE TRANSIENT THERMAL RESPONSE − RqJA (°C/W)
t, TIME (s)
Figure 10. Thermal Response 1 ms
CASE 318−08 ISSUE AS
DATE 30 JAN 2018 SCALE 4:1
D
A1
3
1 2
1
XXXMG G
XXX = Specific Device Code M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may or may not be present.
GENERIC MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C L
0.25
e L1
E E
b
A
SEE VIEW C
DIM
A MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035 INCHES
A1 0.01 0.06 0.10 0.000
b 0.37 0.44 0.50 0.015
c 0.08 0.14 0.20 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.30 0.43 0.55 0.012
0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 6:
PIN 1. BASE 2. EMITTER 3. COLLECTOR
STYLE 7:
PIN 1. EMITTER 2. BASE 3. COLLECTOR
STYLE 8:
PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 9:
PIN 1. ANODE 2. ANODE 3. CATHODE
STYLE 10:
PIN 1. DRAIN 2. SOURCE 3. GATE
STYLE 11:
PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE 2. CATHODE 3. ANODE
STYLE 13:
PIN 1. SOURCE 2. DRAIN 3. GATE
STYLE 14:
PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15:
PIN 1. GATE 2. CATHODE 3. ANODE
STYLE 16:
PIN 1. ANODE 2. CATHODE 3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION 2. ANODE 3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION 2. CATHODE 3. ANODE
STYLE 19:
PIN 1. CATHODE 2. ANODE 3. CATHODE−ANODE STYLE 23:
PIN 1. ANODE 2. ANODE 3. CATHODE
STYLE 20:
PIN 1. CATHODE 2. ANODE 3. GATE STYLE 21:
PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE 2. DRAIN 3. SOURCE
STYLE 25:
PIN 1. ANODE 2. CATHODE 3. GATE
STYLE 26:
PIN 1. CATHODE 2. ANODE 3. NO CONNECTION STYLE 27:
PIN 1. CATHODE 2. CATHODE 3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104 HE
0.35 0.54 0.69 0.014 0.021 0.027
c T 0° −−− 10° 0° −−− 10°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE 2. ANODE 3. ANODE
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
98ASB42226B DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1 SOT−23 (TO−236)
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: [email protected] onsemi Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
