NSM80100MT1G PNP Transistor with Dual Series Switching Diode

PNP Transistor with Dual Series Switching Diode

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Typical Applications

• LCD Control Board

• High Speed Switching

• High Voltage Switching

MAXIMUM RATINGS − PNP TRANSISTOR

Rating Symbol Value Unit

Collector−Emitter Voltage V_CEO −80 Vdc

Collector−Base Voltage V_CBO −80 Vdc

Emitter−Base Voltage V_EBO −4.0 Vdc

Collector Current − Continuous I_C −500 mAdc

MAXIMUM RATINGS − SWITCHING DIODE

Rating Symbol Value Unit

Reverse Voltage VR 100 V

Forward Current IF 200 mA

Non−Repetitive Peak Forward Current (Square Wave, T_J = 25°C prior to

surge) t < 1 sec

t = 1 msec IFSM

1.020

A

Operating and Storage Junction

Temperature Range T_J, T_stg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

ESD RATINGS

Rating Class Value

Electrostatic Discharge HBM

MM 3A

M4 4000 V ≤ Failure < 8000 V Failure > 400 V THERMAL CHARACTERISTICS

Rating Symbol Max Unit

Total Device Dissipation FR−5 Board, (Note 1) @ T_A = 25°C

Derate above 25°C

P_D

400 mW

mW/°C Thermal Resistance from

Junction−to−Ambient (Note 1) R_qJA 313 °C/W Total Device Dissipation FR−5 Board

(Note 2) T = 25°C PD

270 mW

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Device Package Shipping^† ORDERING INFORMATION

SC−74 CASE 318F 1 2

4

PNP Transistor with Dual Series Switching Diode

3 6 5

MARKING DIAGRAM

NSM80100MT1G SC−74 3000 /

3PN MG G 3PN = Device Code M = Date Code*

G = Pb−Free Package (Note: Microdot may be in either location)

*Date Code orientation may vary depending upon manufacturing location.

1 2 3

6 5 4

D2 D1 Q1

ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = −1.0 mA, IB = 0) V(BR)CEO

−80 − V

Emitter−Base Breakdown Voltage

(I_E = −100 mA, I_C = 0) V_(BR)EBO

−4.0 − V

Collector Cutoff Current

(VCE = −60 V, IB = 0) I_CES

− −0.1 mA

Collector Cutoff Current

(V_CB = −80 V, I_E = 0) ICBO

− −0.1 mA

ON CHARACTERISTICS (Note 3) DC Current Gain

(I_C = −10 mA, V_CE = −1.0 V) h_FE

120 − −

Collector−Emitter Saturation Voltage

(I_C = −100 mA, I_B = −10 mA) VCE(sat)

− −0.25 V

Base−Emitter Saturation Voltage

(I_C = −100 mA, V_CE = −1.0 V) V_BE(sat)

− −1.2 V

SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4)

(I_C = −100 mA, V_CE = −2.0 V, f = 100 MHz) fT

150 − MHz

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

4. fT is defined as the frequency at which |h_fe| extrapolates to unity.

D1, D2: SWITCHING DIODE (T_A = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage V_(BR)

75 − V

Reverse Voltage Leakage Current

(V_R = 75 V) (V_R = 20 V, T_J = 150°C) (VR = 75 V, TJ = 150°C)

IR

−−

−

1.030 100

mA

Diode Capacitance

(V_R = 0 V, f = 1.0 MHz) C_D

− 1.5 pF

Forward Voltage

(I_F = 1.0 mA) (I_F = 10 mA) (IF = 50 mA) (I_F = 150 mA)

VF

−−

−−

715855 10001250

mV

Reverse Recovery Time

(I_F = I_R = 10 mA, i_R(REC) = 1.0 mA, R_L = 100 W) t_rr

− 4.0 ns

Forward Recovery Voltage

(IF = 10 mA, tr = 20 ns) V_FR

− 1.75 V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

Figure 1. Current−Gain — Bandwidth Product Figure 2. Capacitance I_C, COLLECTOR CURRENT (mA)

-100 -200 -10

200

100 70 50

20

V_R, REVERSE VOLTAGE (VOLTS)

-1.0 -100

-0.1 100

70 50 30 20

10

-2.0 V_CE = -2.0 V

T_J = 25°C

f T

, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF)

-2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70 30

7.0 5.0

-0.2 -0.5 -5.0 -10 -20 -50

T_J = 25°C C_ibo

C_obo

Figure 3. Switching Time I_C, COLLECTOR CURRENT (mA) -10

-5.0 500

200 100 50

20 10

-100

t, TIME (ns)

-50 -200 -500

1.0 k

300 700

70

30

-7.0 -20 -30 -70 -300

V_CC = -40 V I_C/I_B = 10 I_B1 = I_B2 T_J = 25°C

t_s

t_f

t_r t_d @ V_BE(off) = -0.5 V

Figure 4. DC Current Gain

-2.0 -500

-0.5

I_C, COLLECTOR CURRENT (mA) 400

200

100 80 60 40

-10

, DC CURRENT GAIN

T_J = 125°C

-1.0 -5.0

V_CE = -1.0 V

-20 -50 -100 -200

hFE

25°C -55°C

0.1 1

0.4 0.6 0.7 0.8 1.0 1.1

, COLLECTOR−EMITTER TURATION VOLTAGE (V) VBE(sat), BASE−EMITTER TURATION VOLTAGE (V)

IC/IB = 10

150°C 25°C

−55°C

0.5 0.9

I_C/I_B = 10

25°C

−55°C

Figure 7. Base Emitter Voltage vs. Collector Current

I_C, COLLECTOR CURRENT (A)

1 0.1

0.01 0.001

0.0001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2

VBE(on), BASE−EMITTER VOLTAGE (V) 0.4 0.8 1.0

VCE = 1 V

150°C 25°C

−55°C

Figure 8. Collector Saturation Region

Figure 9. Base−Emitter Temperature Coefficient

Figure 10. Safe Operating Area V_CE, COLLECTOR EMITTER VOLTAGE (V)

100 10

1 0.0010.1

0.01 0.1 1

IC, COLLECTOR CURRENT (A) Thermal Limit

100 mS 1 S

10 mS

1 mS I_B, BASE CURRENT (mA)

, COLLECTOR-EMITTER VOLTAGE (VOLTS)VCE

-0.1 -10

-0.05 -1.0

-0.8

-0.6

-0.4

-0.2

0

-1.0

T_J = 25°C

-50 I_C =

-100 mA I_C =

-50 mA

I_C = -250 mA

I_C = -500 mA

I_C = -10 mA

-20 -2.0 -5.0

-0.2 -0.5

I_C, COLLECTOR CURRENT (mA)

RVB, TEMPERATURE COEFFICIENT (mV/ C)q°

-100 -500

-0.5 -0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-10 R_qVB for V_BE

-1.0 -2.0 -5.0 -20 -50 -200

TEMPERATURE (°C) PD, POWER DISSIPATION (mW)

0 20 40 60 80 100 120 140 160

Figure 11. Operating Temperature Derating 400

300

200

100

0

TYPICAL CHARACTERISTICS

V_F, FORWARD VOLTAGE (V) V_R, REVERSE VOLTAGE (V)

Figure 12. Forward Voltage Figure 13. Leakage Current

Figure 14. Capacitance 0.1

1 10 100 1000

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 T_A = 85°C

T_A = 55°C T_A = 25°C

T_A = −40°C TA = −55°C TA = 150°C

IF, FORWARD CURRENT (mA)

T_A = 125°C

0.001 0.01 0.1 1.0 10 100

0 10 20 30 40 50 60 70

T_A = 85°C TA = 55°C T_A = 125°C T_A = 150°C

T_A = 25°C IR, REVERSE CURRENT (mA)

0.45 0.47 0.49 0.51 0.53 0.55 0.57 0.59 0.61

0 1 2 3 4 5 6 7 8

V_R, REVERSE VOLTAGE (V) Cd, DIODE CAPACITANCE (pF)

0 1.1 1.2

T_A, DERATED AMBIENT TEMPERATURE (°C) VR, DC REVERSE VOLTAGE (V)

0 25 50 75 100 125 150 175

Figure 15. Diode Power Dissipation Curve 100

75

50

25

0

SC−74 CASE 318F

ISSUE P

DATE 07 OCT 2021 SCALE 2:1

STYLE 1:

PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE

STYLE 2:

PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE

XXX MG G

XXX = Specific Device Code M = Date Code

G = Pb−Free Package GENERIC MARKING DIAGRAM*

STYLE 3:

PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1

STYLE 4:

PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3

5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3

STYLE 5:

PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4

STYLE 6:

PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE

1 6

STYLE 7:

PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1

STYLE 8:

PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1

STYLE 9:

PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2

(Note: Microdot may be in either location)

STYLE 10:

PIN 1. ANODE/CATHODE 2. BASE

3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE

STYLE 11:

PIN 1. EMITTER 2. BASE

3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

98ASB42973B DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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