IGBT - Field Stop, Trench 1200 V, 25 A

1200 V, 25 A

FGH25N120FTDS

Description

Using advanced field stop trench technology, ON Semiconductor’s 1200 V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

Features

• High Speed Switching

• Low Saturation Voltage: V

=1.60 V @ I

= 25 A

• High Input Impedance

• These Device is Pb−Free and is RoHS Compliant

• Solar Inverter, UPS, Welder, PFC

www.onsemi.com

TO−247−3 CASE 340CK

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FGH25N120FTDS = Specific Device Code

$Y&Z&3&K FGH25N120 FTDS G

E C

GC E

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)

Description Symbol Rating Unit

Collector to Emitter Voltage VCES 1200 V

Gate to Emitter Voltage V_GES ±25 V

Collector Current T_C = 25°C IC 50 A

Collector Current T_C = 100°C 25 A

Pulsed Collector Current I_CM (Note 1) 75 A

Diode Forward Current T_C = 25°C IF 50 A

Diode Forward Current TC = 100°C 25 A

Diode Maximum Forward Current I_FM 75 A

Maximum Power Dissipation T_C = 25°C P_D 313 W

Maximum Power Dissipation T_C = 100°C 125 W

Operating Junction Temperature T_J −55 to +150 °C

Storage Temperature Range T_stg −55 to +150 °C

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds T_L 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: Pulse width limited by max. junction temperature.

THERMAL CHARACTERISTICS

Parameter Symbol Typ Max Unit

Thermal Resistance, Junction to Case R_JC(IGBT) − 0.4 °C/W

Thermal Resistance, Junction to Case R_JC(Diode) − 1.25 °C/W

Thermal Resistance, Junction to Ambient R_JA − 40 °C/W

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH25N120FTDS FGH25N120FTDS TO−247

(Pb−Free) Tube N/A N/A 30

ELECTRICAL CHARACTERISTICS OF THE IGBT (T_C = 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Collector to Emitter Breakdown Voltage BV_CES V_GE = 0 V, I_C = 250 A 1200 − − V

Collector Cut−Off Current I_CES V_CE = V_CES, V_GE = 0 V − − 1 mA

G−E Leakage Current I_GES V_GE = V_GES, V_CE = 0 V − − ±250 nA

ON CHARACTERISTICs

G−E Threshold Voltage V_GE(th) I_C = 25 mA, V_CE = V_GE 3.5 6 7.5 V

Collector to Emitter Saturation Voltage V_CE(sat) I_C = 25 A, V_GE = 15 V − 1.6 2 V I_C = 25 A, V_GE = 15 V, T_C = 125°C − 1.92 − V

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)

Parameter Symbol Test Conditions Min Typ Max Unit

DYNAMIC CHARACTERISTICS

Input Capacitance C_ies V_CE = 30 V, V_GE = 0 V, f = 1 MHz − 4090 − pF

Output Capacitance C_oes − 135 − pF

Reverse Transfer Capacitance C_res − 75 − pF

SWITCHING CHARACTERISTICS

Turn−On Delay Time t_d(on) V_CC = 600 V, I_C = 25 A, RG = 10 VGE = 15 V, Inductive Load, T_C = 25°C

− 26 35 ns

Rise Time t_r − 41 53 ns

Turn−Off Delay Time t_d(off) − 151 196 ns

Fall Time t_f − 102 132 ns

Turn−On Switching Loss Eon − 1.42 1.84 mJ

Turn−Off Switching Loss Eoff − 1.16 1.5 mJ

Total Switching Loss Ets − 2.58 3.34 mJ

Turn−On Delay Time td(on) VCC = 600 V, IC = 25 A, R_G = 10 V_GE = 15 V, Inductive Load, T_C = 125°C

− 22 − ns

Rise Time tr − 41 − ns

Turn−Off Delay Time td(off) − 163 − ns

Fall Time t_f − 136 − ns

Turn−On Switching Loss E_on − 2.04 − mJ

Turn−Off Switching Loss E_off − 1.58 − mJ

Total Switching Loss E_ts − 3.62 − mJ

Total Gate Charge Q_g VCE = 600 V, IC = 25 A, VGE = 15 V − 169 225 nC

Gate to Emitter Charge Q_ge − 33 44 nC

Gate to Collector Charge Q_gc − 78 104 nC

ELECTRICAL CHARACTERISTICS OF THE DIODE (T_J = 25°C unless otherwise noted)

Parametr Symbol Test Conditions Min Typ Max Unit

Diode Forward Voltage V_FM I_F = 25 A T_C = 25°C − 2.5 3.5 V

T_C = 125°C − 2.3 −

Diode Reverse Recovery Time t_rr I_F = 25 A, di_F/dt = 200 A/s T_C = 25°C − 411 535 ns

T_C = 125°C − 496 −

Diode Peak Reverse Recovery

Current I_rr T_C = 25°C − 5.2 6.8 A

T_C = 125°C − 6.9 −

Diode Reverse Recovery Charge Q_rr T_C = 25°C − 1.1 1.82 C

T_C = 125°C − 1.7 −

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage

Characteristics Figure 4. Transfer Characteristics

0 30 60 90 120

0 2 4 6

V_GE = 8 V 9 V 10 V 15 V 12 V

20 V 17 V T_C = 25°C

150 180

8 VGE = 8 V

9 V

8 6

2 4 00

30 60 90 120 150 180

Collector−Emitter Voltage, V_CE [V]

Collector Current, IC [A]

Collector−Emitter Voltage, V_CE [V]

10 V 15 V 12 V 20 V

17 V T_C = 125°C

Collector Current, IC [A]

0 2 4 6

0 20 40 60 80 100 120

Collector−Emitter Voltage, VCE [V]

Collector Current, IC [A]

Common Emitter V_GE = 15 V T_C = 25°C T_C = 125°C

Common Emitter VGE = 20 V TC = 25°C T_C = 125°C

0 5 10 15

0 20 40 60 80 100 120

Collector Current, IC [A]

Gate−Emitter Voltage, V_GE [V]

Common Emitter V_GE = 15 V

50 A

25 A

I_C = 10 A

1.0 1.5 2.0 2.5 3.0

Collector−Emitter Voltage, VCE [V] Common Emitter

T_C = 25°C

50 A 25 A

IC = 10 A Collector−Emitter Voltage, VCE [V]

0 4 8 12 16 20

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 7. Saturation Voltage vs. V_GE Figure 8. Load Current vs. Frequency

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics 0

4 8 12 16 20

0 4 8 12 16 20

Common Emitter TC = 125°C

50 A 25 A

I_C = 10 A

Gate−Emitter Voltage, V_GE [V]

Collector−Emitter Voltage, VCE [V]

0 2000 4000 6000 8000

30

10⁰ 10¹ 10² 10³

0 20 40 60 80 100 120 140

Frequency [kHz]

Load Current [A]

1 10

Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C

Cies

C_oes

C_res

Collector−Emitter Voltage, V_CE [V]

Capacitance [pF]

0 3 6 9 12 15

600 V 400 V Common Emitter

TC = 25°C

V_CC = 200 V

Gate Charge, Q_g [nC]

0 40 80 120 160 200

Gate−Emitter Voltage, VGE [V]

0.1 1 10 100 200

*Notes:

1. TC = 25°C 2. TJ = 150°C 3. Single Pulse

DC10 ms1 ms 100 s

10 s

Collector Current, IC [A]

Common Emitter V_CC = 600 V, V_GE = 15 V I_C = 25 A

T_C = 25°C T = 125°C t_d(on)

t_r 100 200

Switching Time [ns]

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 13. Turn−Off Characteristics vs. Gate Resistance

Figure 14. Turn−on Characteristics vs. Collector Current

Figure 15. Turn−off Characteristics vs.

Collector Current

Figure 16. Switching Loss vs. Gate Resistance

10 100 1000

0 10 20 30 40 50

Common Emitter V_CC = 600 V, V_GE = 15 V I_C = 25 A

TC = 25°C T_C = 125°C

t_d(off)

t_f

Gate Resistance, RG []

Switching Time [ns]

Common Emitter VGE = 15 V, RG = 10 T_C = 25°C

T_C = 125°C

tr

td(on)

0 10 20 30 40 50

10 100

Collector Current, IC [A]

Switching Time [ns]

20 100 1000

Switching Time [ns]

Common Emitter VGE = 15 V, RG = 10 T_C = 25°C

T_C = 125°C

0 10 20 30 40 50

t_f

t_d(off)

Collector Current, I_C [A]

Common Emitter VCC = 600 V, VGE = 15 V I_C = 25 A

T_C = 25°C TC = 125°C

E_on

E_off

0 10 20 30 40 50

1 10

Gate Resistance, R_G []

Switching Loss [mJ]

1 10

Switching Loss [mJ]

Common Emitter V_GE = 15 V, R_G = 10 T_C = 25°C

T_C = 125°C Eon

E_off

10 100

Safe Operating Area VGE = 15 V, TC = 125°C Collector Current, IC [A]

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 19. Forward Characteristics Figure 20. Reverse Recovery Current

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

0 1 2 3

0.1 1 10 30

TJ = 125°C

T_J = 25°C

T_C = 25°C T_C = 125°C

Forward Voltage, V_F [V]

Forward Current, IF [A]

10 20 30 40 50

2 3 4 5 6 7

200 A/s

d_iF/dt = 100 A/s

T_C = 25°C

Forward Current, I_F [A]

Reverse Recovery Current, Irr [A]

200 A/s

d_iF/dt = 100 A/s

T_C = 25°C

10 20 30 40 50

0.0 0.5 1.0 1.5 2.0

Forward Current, IF [A]

Stored Recovery Charge, Qrr [ C]

10 20 30 40

400 600 800 1000 1200

TC = 25°C 200 A/s

diF/dt = 100 A/s

Forward Current, I_F [A]

Reverse Recovery Time, trr [ns]

1E−5 0.0001 0.001 0.01 0.1 1 10

0.001 0.01 0.1 1

0.010.02 0.10.05 0.2

Single Pulse 0.5

t1t2 Duty Factor, D = t1/t2 Peak T_J = Pdm x Zjc + TC

Thermal Response [Zjc]

P_DM

TO−247−3LD SHORT LEAD CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may GENERIC

MARKING DIAGRAM*

AYWWZZ XXXXXXX XXXXXXX

E

D

L1 E2

(3X) b (2X) b2

b4

(2X) e

Q

L

0.25 ^M B A ^M A

A1 A2 A

c

B

D1 P1

S P

E1

D2

1 2 3 2

DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35 E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25 L1 3.69 3.81 3.93

P 3.51 3.58 3.65

P1 6.60 6.80 7.00

Q 5.34 5.46 5.58

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information