2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors

(1)

Medium-Power Plastic PNP Silicon Transistors

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications.

Features

• Low Saturation Voltage − V CE(sat) = 0.6 Vdc (Max) @ I C = 1.0 A

• Excellent Power Dissipation, P _D = 30 W @ T _C = 25 _ C

• Excellent Safe Operating Area

• Gain Specified to I _C = 1.0 A

• Complement to NPN 2N4921, 2N4922, 2N4923

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

2N4918 2N4919 2N4920

V

CEO

40 60 80

Vdc

Collector − Base Voltage

2N4918 2N4919 2N4920

V

_CBO

40 60 80

Vdc

Emitter − Base Voltage V

_EBO

5.0 Vdc

Collector Current − Continuous

(Note 1) I

_C

(Note 2) 1.0

3.0 Adc

Base Current I

B

1.0 Adc

Total Power Dissipation @ T

A

= 25°C

Derate above 25°C P

D

30 0.24 W

W/°C Operating and Storage Junction

Temperature Range T

J

, T

stg

−65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. The 1.0 A max I

C

value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current−handling capability of the device (See Figure 5).

2. Indicates JEDEC Registered Data for 2N4918 Series.

THERMAL CHARACTERISTICS (Note 3)

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

^qJC

4.16 °C/W

3. Recommend use of thermal compound for lowest thermal resistance.

3.0 A, 40−80 V, 30 W GENERAL PURPOSE POWER TRANSISTORS

TO−225 CASE 077

STYLE 1 http://onsemi.com

xx = 18, 19, 20

Y = Year

WW = Work Week MARKING DIAGRAM

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION YWW

2N 49xx

FRONT VIEW BACK VIEW

1 2 3 3 2 1

4

(2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (T

_C

= 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

^ÎÎÎÎÎ

ÎÎÎÎÎ

Symbol

^ÎÎÎ

ÎÎÎ

Min

^ÎÎÎÎ

ÎÎÎÎ

Max

^ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 4)

(I

_C

= 0.1 Adc, I

_B

= 0) 2N4918

2N4919 2N4920

ÎÎÎÎÎ

V

CEO(sus) ^ÎÎÎ

ÎÎÎ

40 60 80

ÎÎÎÎ

−

ÎÎÎ

Vdc

Collector Cutoff Current

(V

_CE

= 20 Vdc, I

_B

= 0) 2N4918

(V

_CE

= 30 Vdc, I

_B

= 0) 2N4919

(V

_CE

= 40 Vdc, I

_B

= 0) 2N4920

ÎÎÎÎÎ

I

CEO

ÎÎÎ

−

ÎÎÎÎ

0.5 0.5 0.5

ÎÎÎ

mAdc

Collector Cutoff Current

(V

_CE

= Rated V

_CEO

, V

_BE(off)

= 1.5 Vdc)

(V

CE

= Rated V

CEO

, V

BE(off)

= 1.5 Vdc, T

C

= 125_C

ÎÎÎÎÎ

I

CEX

ÎÎÎ

−

ÎÎÎÎ

0.1 0.5

ÎÎÎ

mAdc

Collector Cutoff Current (V

CB

= Rated V

CB

, I

E

= 0)

ÎÎÎÎÎ

I

CBO ^ÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

Emitter Cutoff Current (V

_BE

= 5.0 Vdc, I

_C

= 0)

ÎÎÎÎÎ

I

EBO

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 4) (I

_C

= 50 mAdc, V

_CE

= 1.0 Vdc) (I

_C

= 500 mAdc, V

_CE

= 1.0 Vdc) (I

_C

= 1.0 Adc, V

_CE

= 1.0 Vdc)

ÎÎÎÎÎ

h

_FE ^ÎÎÎ

ÎÎÎ

40 30 10

ÎÎÎÎ

− 150

−

ÎÎÎ

−

Collector−Emitter Saturation Voltage (Note 4) (I

_C

= 1.0 Adc, I

_B

= 0.1 Adc)

ÎÎÎÎÎ

V

_CE(sat) ^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

0.6

^ÎÎÎ

ÎÎÎ

Vdc

Base−Emitter Saturation Voltage (Note 4) (I

_C

= 1.0 Adc, I

_B

= 0.1 Adc)

ÎÎÎÎÎ

V

_BE(sat) ^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

1.3

^ÎÎÎ

ÎÎÎ

Vdc

Base−Emitter On Voltage (Note 4)

(I

_C

= 1.0 Adc, V

_CE

= 1.0 Vdc)

^ÎÎÎÎÎ

ÎÎÎÎÎ

V

_BE(on)

ÎÎÎ

−

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (I

_C

= 250 mAdc, V

_CE

= 10 Vdc, f = 1.0 MHz)

^ÎÎÎÎÎ

ÎÎÎÎÎ

f

_T ^ÎÎÎ

ÎÎÎ

3.0

^ÎÎÎÎ

ÎÎÎÎ

−

^ÎÎÎ

ÎÎÎ

MHz

Output Capacitance (V

_CB

= 10 Vdc, I

_E

= 0, f = 100 kHz)

^ÎÎÎÎÎ

ÎÎÎÎÎ

C

_ob ^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

100

^ÎÎÎ

ÎÎÎ

pF

Small−Signal Current Gain (I

_C

= 250 mAdc, V

_CE

= 10 Vdc, f = 1.0 kHz)

^ÎÎÎÎÎ

ÎÎÎÎÎ

h

_fe ^ÎÎÎ

ÎÎÎ

25

^ÎÎÎÎ

ÎÎÎÎ

−

^ÎÎÎ

ÎÎÎ

− 4. Pulse Test: PW [ 300 ms, Duty Cycle [ 2.0%

ORDERING INFORMATION

Device Package Shipping

^†

2N4918 TO−225 500 Unit / Bulk

2N4919 TO−225 500 Unit / Bulk

2N4920 TO−225 500 Unit / Bulk

2N4920G TO−225

(Pb−Free) 500 Unit / Bulk

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

(3)

40

30

20

10 0 25 50 75 100 125 150

Figure 1. Power Derating T

_C

, CASE TEMPERATURE ( ° C)

P D , POWER DISSIP A TION (W A TTS)

Figure 2. Switching Time Equivalent Test Circuit

5.0

10 Figure 3. Turn−On Time I

_C

, COLLECTOR CURRENT (mA)

V

_CC

= 30 V I

_C

/I

_B

= 20

t, TIME (s) μ

2.0 1.0 0.7 0.5 0.3 0.2 0.1

0.05 20 30 50 70 100 200 700 1000

V

_in

t

₁

V

_BE(off)

APPROX 9.0 V

TURN-OFF PULSE t

₃

t

₂

APPROX

-11 V

V

_CC

SCOPE R

_B

C

_jd

<<C

_eb

+4.0 V

t

₁

< 15 ns 100 < t

₂

< 500 m s t

₃

< 15 ns

DUTY CYCLE ≈ 2.0%

V

_in

R

_C

0.07 3.0 T

_J

= 25 ° C

T

_J

= 150 ° C I

_C

/I

_B

= 10, UNLESS NOTED

V

_CC

= 60 V V

_CC

= 30 V

V

_CC

= 30 V V

_BE(off)

= 0

300 500 0

0 V

_in

APPROX -11 V

RB and RC varied to obtain desired current levels

t

_r

V

_BE(off)

= 2.0 V V

_CC

= 60 V

t

_d

(4)

Figure 4. Thermal Response t, TIME (ms)

1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02

0.02 0.03

r(t) , TRANSIENT THERMAL RESIST ANCE (NORMALIZED)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000

q

JC

(t) = r(t) q

JC

q

JC

= 4.16 ° C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t

₁

T

_J(pk)

- T

_C

= P

_(pk)

q

JC

(t)

P

_(pk)

t

₁

t

₂

DUTY CYCLE, D = t

₁

/t

₂

D = 0.5

0.2 0.05 0.01 SINGLE PULSE 0.1

10

1.0 Figure 5. Active−Region Safe Operating Area V

_CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0

2.0 1.0

0.5 0.1 2.0 3.0 5.0 10 20 30 50 70 100

I C 0.2

, COLLECT OR CURRENT (AMP)

T

_J

= 150 ° C

dc

5.0 ms 100 m s

7.0 PULSE CURVES APPLY BELOW

RATED V

_CEO

1.0 ms

SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ T

_C

= 25 ° C

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I _C − V _CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T _J(pk) = 150 _ C; T _C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T _J(pk) v 150 _ C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

t μ s , ST ORAGE TIME (s) ′ t μ f, F ALL TIME (s)

5.0

10 Figure 6. Storage Time I

_C

, COLLECTOR CURRENT (mA) 2.0

1.0 0.5 0.3 0.2 0.1 0.05

20 30 50 70 500 700 1000

t

_s

′ = t

_s

- 1/8 t

_f

0.07 100 3.0

0.7 200 300 T

_J

= 25 ° C T

_J

= 150 ° C I

_C

/I

_B

= 20

5.0

10 Figure 7. Fall Time I

_C

, COLLECTOR CURRENT (mA) 2.0

1.0 0.5 0.3 0.2 0.1 0.05

20 30 50 70 500 700 1000

0.07 100 3.0

0.7 200 300 T

_J

= 25 ° C T

_J

= 150 ° C

I

_C

/I

_B

= 10

I

_C

/I

_B

= 20

I

_C

/I

_B

= 10

I

_B1

= I

_B2

V

_CC

= 30 V

I

_B1

= I

_B2

(5)

TYPICAL DC CHARACTERISTICS

R BE , EXTERNAL BASE-EMITTER RESIST ANCE (OHMS) V CE , COLLECT OR-EMITTER VOL TAGE (VOL TS) 1000

2.0 Figure 8. Current Gain I

_C

, COLLECTOR CURRENT (mA)

10 3.0 5.0 10 20 30 200 300 500 2000

500 200 100 70

Figure 9. Collector Saturation Region 1.0

0.2 I

_B

, BASE CURRENT (mA)

0 0.3 0.5 1.0 2.0 5.0 10 20 50 200

0.8

0.6

0.4

0.2 I

_C

= 0.1 A

T

_J

= 25 ° C

0.25 A 0.5 A 1.0 A 700

300 h FE , DC CURRENT GAIN

T

_J

= 150 ° C

25 ° C -55 ° C

V

_CE

= 1.0 V

50 30 20

50 100 1000 3.0 30 100

10

⁸

0 Figure 10. Effects of Base−Emitter Resistance T

_J

, JUNCTION TEMPERATURE ( ° C)

30 60 90 120 150

10

⁷

10

⁵

10

⁴

10

³

V

_CE

= 30 V I

_C

= 10 I

_CES

I

_C

= 2x I

_CES

I

_C

≈ I

_CES

I

_CES

VALUES OBTAINED FROM FIGURE 13 10

⁶

1.5

2.0 I

_C

, COLLECTOR CURRENT (mA)

5.0 10 20 30 50 100 200 300 2000

1.2

0.9

0.6

0.3

0 T

_J

= 25 ° C

V

_BE(sat)

@ I

_C

/I

_B

= 10

V

_CE(sat)

@ I

_C

/I

_B

= 10

VOL TAGE (VOL TS)

Figure 11. “On” Voltage

3.0 500 1000

V

_BE

@ V

_CE

= 2.0 V

10

²

10

¹

10

⁰

10

^-1

, COLLECT OR CURRENT (A) μ

I C 10

^-2

V

_CE

= 30 V T

_J

= 150 ° C

100 ° C

25 ° C I

_C

= I

_CES

10

⁴

+2.5

T

_J

= -55 ° C to +100 ° C

TURE COEFFICIENTS (mV/ C) ° +2.0

+1.5

+0.5 0 -0.5 -1.0

-1.5 q

VB

FOR V

_BE

* q

VC

FOR V

_CE(sat)

T

_J

= 100 ° C to 150 ° C

*APPLIES FOR I

_C

/I

_B

< hFE@VCE + 1.0V

2 +1.0

(6)

TO−225 CASE 77−09

ISSUE AD

DATE 25 MAR 2015

STYLE 1:

PIN 1. EMITTER 2., 4. COLLECTOR

3. BASE

STYLE 6:

PIN 1. CATHODE 2., 4. GATE

3. ANODE

STYLE 2:

PIN 1. CATHODE 2., 4. ANODE

3. GATE

STYLE 3:

PIN 1. BASE 2., 4. COLLECTOR

3. EMITTER

STYLE 4:

PIN 1. ANODE 1 2., 4. ANODE 2 3. GATE

STYLE 5:

PIN 1. MT 1 2., 4. MT 2 3. GATE

STYLE 7:

PIN 1. MT 1 2., 4. GATE

3. MT 2

STYLE 8:

PIN 1. SOURCE 2., 4. GATE

3. DRAIN

STYLE 9:

PIN 1. GATE 2., 4. DRAIN

3. SOURCE

STYLE 10:

PIN 1. SOURCE 2., 4. DRAIN

3. GATE

YWW XX XXXXXG

Y = Year

WW = Work Week XXXXX = Device Code G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

GENERIC MARKING DIAGRAM*

SCALE 1:1

DIM MIN MAX MILLIMETERS

D 10.60 11.10 E 7.40 7.80 A 2.40 3.00 b 0.60 0.90

P 2.90 3.30 L1 1.27 2.54 c 0.39 0.63

L 14.50 16.63 b2 0.51 0.88

Q 3.80 4.20 A1 1.00 1.50

e 2.04 2.54

E

1 2 3

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. NUMBER AND SHAPE OF LUGS OPTIONAL.

2X 2X

Q

D

L1 P

b2

b

e c

L A1

A FRONT VIEW BACK VIEW

FRONT VIEW SIDE VIEW

1 2 3 3 2 1

4

PIN 4 BACKSIDE TAB

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

98ASB42049B DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

TO−225

(7)

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors

Medium-Power Plastic PNP Silicon Transistors

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications.

Features

• Low Saturation Voltage − V CE(sat) = 0.6 Vdc (Max) @ I C = 1.0 A

• Excellent Power Dissipation, P D = 30 W @ T C = 25 _ C

• Excellent Safe Operating Area

• Gain Specified to I C = 1.0 A

• Complement to NPN 2N4921, 2N4922, 2N4923

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

2N4918 2N4919 2N4920

V

40 60 80

Vdc

Collector − Base Voltage

2N4918 2N4919 2N4920

V

40 60 80

Vdc

Emitter − Base Voltage V

5.0 Vdc

Collector Current − Continuous

(Note 1) I

(Note 2) 1.0

3.0 Adc

Base Current I

1.0 Adc

Total Power Dissipation @ T

= 25°C

Derate above 25°C P

30

0.24 W

W/°C Operating and Storage Junction

Temperature Range T

, T

−65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. The 1.0 A max I

value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current−handling capability of the device (See Figure 5).

2. Indicates JEDEC Registered Data for 2N4918 Series.

THERMAL CHARACTERISTICS (Note 3)

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

4.16 °C/W

3. Recommend use of thermal compound for lowest thermal resistance.

3.0 A, 40−80 V, 30 W GENERAL PURPOSE POWER TRANSISTORS

TO−225 CASE 077

STYLE 1 http://onsemi.com

xx = 18, 19, 20

Y = Year

WW = Work Week MARKING DIAGRAM

ORDERING INFORMATION YWW

2N 49xx

FRONT VIEW BACK VIEW

1 2 3 3 2 1

4

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 4)

(I

= 0.1 Adc, I

= 0) 2N4918

2N4919 2N4920

V

40 60 80

−

−

−

Vdc

Collector Cutoff Current

(V

• Excellent Power Dissipation, P _D = 30 W @ T _C = 25 _ C

• Gain Specified to I _C = 1.0 A