NTZS3151P MOSFET – P-Channel, Small Signal, SOT-563

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MOSFET – P-Channel, Small Signal, SOT-563

-20 V, -950 mA

Features

• ^{Low R}

DS(on)

Improving System Efficiency

• Low Threshold Voltage

• Small Footprint 1.6 x 1.6 mm

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Load/Power Switches

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (T_J = 25°C unless otherwise noted.)

Parameter Symbol Value Unit

Drain−to−Source Voltage V_DSS −20 V

Gate−to−Source Voltage V_GS ±8.0 V

Continuous Drain Current

(Note 1) Steady

State

TA = 25°C

I_D −860 mA

T_A = 70°C −690 Power Dissipation

(Note 1) Steady State PD 170 mW

Continuous Drain Current

(Note 1) t v 5 s T_A = 25°C

I_D −950 mA

T_A = 70°C −760 Power Dissipation

(Note 1) t v 5 s PD 210 mW

Pulsed Drain Current t_p = 10 ms I_DM −4.0 A Operating Junction and Storage Temperature T_J,

TSTG

−55 to 150 °C

Source Current (Body Diode) I_S −360 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) T_L 260 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1) R_qJA 720 °C/W Junction−to−Ambient – t v 5 s (Note 1) R 600

SOT−563−6 CASE 463A

MARKING DIAGRAM http://onsemi.com

V_(BR)DSS R_DS(on) Typ I_D Max

−20 V

120 mW @ −4.5 V

144 mW @ −2.5 V −950 mA 195 mW @ −1.8 V

1 6

TX = Specific Device Code M = Date Code

G = Pb−Free Package TX MG

G

Top View

D

S D

D

6

5

4 1

2

G 3

PINOUT: SOT−563 D

S G

P−Channel MOSFET

(Note: Microdot may be in either location)

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NTZS3151P

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ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted.)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/TJ −13 mV/°C

Zero Gate Voltage Drain Current

I_DSS V_GS = 0 V T_J = 25°C −1.0 mA

V_DS = −20 V T_J = 125°C −5.0

Gate−to−Source Leakage Current I_GSS V_DS = 0 V, V_GS = "8.0 V "100 nA ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V_GS(TH) V_GS = V_DS, I_D = −250 mA −0.45 −1.0 V

Negative Threshold

Temperature Coefficient V_GS(TH)/T_J 2.4 mV/°C

Drain−to−Source On Resistance

R_DS(on)

V_GS = −4.5 V, I_D = −950 mA 120 150 mW

VGS = −4.5 V, ID = −770 mA 112 142 VGS = −2.5 V, ID = −670 mA 144 200 VGS = −1.8 V, ID = −200 mA 195 240

Forward Transconductance gFS VDS = −10 V, ID = −810 mA 3.1 S

CHARGES AND CAPACITANCES

Input Capacitance CISS

V_GS = 0 V, f = 1.0 MHz, V_DS = −16 V

458 pF

Output Capacitance COSS 61

Reverse Transfer Capacitance CRSS 38

Total Gate Charge Q_G(TOT)

VGS = −4.5 V, VDS = −10 V;

I_D = −770 mA

5.6 nC

Threshold Gate Charge Q_G(TH) 0.6

Gate−to−Source Charge Q_GS 0.9

Gate−to−Drain Charge Q_GD 1.2

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time t_d(ON)

VGS = −4.5 V, VDD = −10 V, I_D = −950 mA, R_G = 6.0 W

5.0 ns

Rise Time t_r 12

Turn−Off Delay Time t_d(OFF) 23.7

Fall Time t_f 18

DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage

V_SD VGS = 0 V, I_S = −360 mA

T_J = 25°C −0.64 −0.9 V

T_J = 125°C −0.5

Reverse Recovery Time t_RR V_GS = 0 V, dI_S/dt = 100 A/ms,

IS = −360 mA 10.5 ns

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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TYPICAL PERFORMANCE CURVES

(T_J = 25°C unless otherwise noted)

−1 V 125°C

0 4

2.5 2.5

3 1.5

1

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−ID,DRAIN CURRENT (AMPS) 1.5

0.5 0

0.5

Figure 1. On−Region Characteristics

0.5 4

2

1.5 3

3.5

1.5

0.5 0 1 0

Figure 2. Transfer Characteristics

−V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

3 0.2

0

Figure 3. On−Resistance vs. Drain Current and Temperature

−I_D, DRAIN CURRENT (AMPS)

RDS(on),DRAIN−TO−SOURCE RESISTANCE (W) −ID,DRAIN CURRENT (AMPS)

0 0.1

Figure 4. On−Resistance vs. Drain Current and Gate Voltage

−I_D, DRAIN CURRENT (AMPS)

1.4 1.2 1

T_J = 25°C

2 0

T_J = −55°C

0.3

0

TJ = 25°C

I_D = −0.95 A V_GS = −4.5 V

DRAIN−TO−SOURCE ANCE (NORMALIZED)

2

25°C

RDS(on),DRAIN−TO−SOURCE RESISTANCE (W)

1.8

V_GS = −1.8 V

−1.2 V

1 4

−1.4 V

−1.6 V

0.2

V_GS = −2.5 V

3.5 5

VDS ≥ −10 V

0.3

0.5 1 1.5

V_GS = −3 V V_GS = −2 V

V_GS = 0 V

−IDSS, LEAKAGE (nA)

T_J = 150°C

TJ = 125°C 1000

10000

2 2.5 3 3.5 4

3.5

4 4.5

2.5

V_GS = −4.5 V

T_J = 25°C TJ = 125°C

TJ = −55°C

VGS = −4.5 V

1.6 3

2

1

−1.8 V

2.5 3

2

1

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NTZS3151P

http://onsemi.com 4

TYPICAL PERFORMANCE CURVES

(T_J = 25°C unless otherwise noted)

−VGS

0 3 6

4

1 0

Q_G, TOTAL GATE CHARGE (nC)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

I_D = −0.77 A T_J = 25°C

5 2

3

−VDS,DRAIN−TO−SOURCE VOLTAGE (VOLTS) 30

10

0 Q_GD

10 1

10

1

100 RG, GATE RESISTANCE (W)

t, TIME (ns)

VDD = −25 V ID = −0.95 A VGS = −4.5 V 1000

5

20

td(off)

t_d(on) t_f t_r

−V_DS

4 1

0.9 0.2

0

−V_SD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−IS, SOURCE CURRENT (AMPS)

V_GS = 0 V T_J = 25°C 1.2

0.7 0.5

0.1 0.4

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 2

QT

0.8 0.6

0.4

15

5 25

Q_GS VDS = 0 V VGS = 0 V

5

10 10

1000

300 200 100

0 25

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

T_J = 25°C

C_OSS

CISS

C_RSS

500

5 0

400

−V_GS −V_DS 15

600 700 800 900

20

100

0.3 0.2 0.6

0.8 1.0

ORDERING INFORMATION

Device Package Shipping

NTZS3151PT1G SOT−563

(Pb−Free) 4000 / Tape & Reel

NTZS3151PT1H SOT−563

NTZS3151PT5G SOT−563

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe- cifications Brochure, BRD8011/D.

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SOT−563, 6 LEAD CASE 463A

ISSUE H

DATE 26 JAN 2021 SCALE 4:1

1 6

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SOT−563, 6 LEAD CASE 463A

ISSUE H

DATE 26 JAN 2021

XX = Specific Device Code M = Month Code G = Pb−Free Package

XX MG GENERIC MARKING DIAGRAM*

1

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

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DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

NTZS3151P MOSFET – P-Channel, Small Signal, SOT-563

MOSFET – P-Channel, Small Signal, SOT-563

-20 V, -950 mA

• Low R

Improving System Efficiency

• Low Threshold Voltage

• Small Footprint 1.6 x 1.6 mm

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

• Load/Power Switches

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

NTZS3151P

TYPICAL PERFORMANCE CURVES

NTZS3151P

TYPICAL PERFORMANCE CURVES

• ^{Low R}