NGTB40N120IHLWG IGBT

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.

Features

• Low Saturation Voltage using Trench with Field Stop Technology

• Low Switching Loss Reduces System Power Dissipation

• Optimized for Low Case Temperature in IH Cooker Application

• Low Gate Charge

• These are Pb−Free Devices

• Inductive Heating

• Consumer Appliances

• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage VCES 1200 V

Collector current

@ TC = 25°C

@ TC = 100°C

IC

8040

A

Pulsed collector current, T_pulse

limited by T_Jmax ICM 320 A

Diode forward current

@ TC = 25°C

@ TC = 100°C

IF

8040

A

Diode pulsed current, T_pulse limited

by T_Jmax IFM 320 A

Gate−emitter voltage VGE $20 V

Power Dissipation

@ TC = 25°C

@ TC = 100°C

PD

260104

W

Operating junction temperature

range TJ −55 to +150 °C

Storage temperature range T_stg −55 to +150 °C Lead temperature for soldering, 1/8”

from case for 5 seconds T_SLD 260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

TO−247 CASE 340L

STYLE 4 G C

40 A, 1200 V V

= 1.90 V

E

= 1.40 mJ

E

Device Package Shipping ORDERING INFORMATION

http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

40N120IHL AYWWG G

E C

Rating Symbol Value Unit

Thermal resistance junction−to−case, for IGBT R_qJC 0.48 °C/W

Thermal resistance junction−to−case, for Diode R_qJC 1.5 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage,

gate−emitter short−circuited V_GE = 0 V, I_C = 500 mA V(BR)CES 1200 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 40 A

V_GE = 15 V, I_C = 40 A, T_J = 150°C V_CEsat −

− 1.90

2.1 2.35

− V

Gate−emitter threshold voltage V_GE = V_CE, I_C = 400 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited V_GE = 0 V, V_CE = 1200 V

VGE = 0 V, VCE = 1200 V, TJ = 150°C I_CES −

− −

− 0.5

2.0 mA

Gate leakage current, collector−emitter

short−circuited VGE = 20 V, VCE = 0 V IGES − − 200 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 10400 − pF

Output capacitance C_oes − 245 −

Reverse transfer capacitance C_res − 185 −

Gate charge total

VCE = 600 V, IC = 40 A, VGE = 15 V

Q_g 420 nC

Gate to emitter charge Q_ge 95

Gate to collector charge Q_gc 178

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turn−off delay time TJ = 25°C

V_CC = 600 V, I_C = 40 A R_g = 10 W VGE = 0 V/ 15V

t_d(off) 360 ns

Fall time t_f 130

Turn−off switching loss E_off 1.40 mJ

Turn−off delay time TJ = 125°C

V_CC = 600 V, I_C = 40 A R_g = 10 W V_GE = 0 V/ 15V

td(off) 380 ns

Fall time tf 185

Turn−off switching loss Eoff 2.6 mJ

DIODE CHARACTERISTIC

Forward voltage VGE = 0 V, IF = 40 A

V_GE = 0 V, I_F = 40 A, T_J = 150°C VF 1.6

1.8 1.8 V

TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

5 4

3 2

1 0

140

Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)

12 10 2

0 160

Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics

VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)

90 80 60

20 30 50

10 0 100000

3.0 2.5 2.0

1.5 1.0

0.5 0

140

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

CAPACITANCE (pF) IF, FORWARD CURRENT (A)

VGE = 20 to 11 V T_J = 25°C

10 V

9 V

8 V 7 V

5 4

3 2

1 0

140

IC, COLLECTOR CURRENT (A)

VGE = 20 to 11 V T_J = 150°C

15 V 11 V

8 V 7 V

5 4

3 2

1 0

160

IC, COLLECTOR CURRENT (A)

VGE = 20 to 11 V

TJ = −40°C

10 V

9 V

8 V T_J = 25°C

T_J = 150°C

100

T_J = 25°C

T_J = 125°C 7 V

Cies

C_oes C_res 120

100 80 60 40 20 0

120 100 80 60 40 20 0

140 120 100 80 60 40 20 0

140 120 100 80 60 40 20

0 4 6 8

40 70

10000

1000

100

10

120 100 80 60 40 20 0

Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature

Q_G, GATE CHARGE (nC) T_J, JUNCTION TEMPERATURE (°C)

150 100 50 0 16

140 120 100 80 60 40 20 0 3.5

Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. I_C

T_J, JUNCTION TEMPERATURE (°C) I_C, COLLECTOR CURRENT (A)

140 120 100 80 60 40 20 10 10 100 1000

34 30 26 22 18 4.5

Figure 11. Switching Time vs. I_C Figure 12. Energy Loss vs. Rg

IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W)

1 10 100 1000

75 65 55 45 35 25 15 5 6

VGE, GATE−EMITTER VOLTAGE (V) Eoff, TURN−OFF SWITCHING LOSS (mJ)

SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ)

SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ)

250 160

VCE = 600 V VGE = 15 V I_C = 40 A Rg = 10 W VCE = 600 V

160 V_CE = 600 V

V_GE = 15 V I_C = 40 A Rg = 10 W

t_f t_d(off)

50 54 V_CE = 600 V

V_GE = 15 V T_J = 150°C Rg = 10 W

VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W

tf

t_d(off)

V_CE = 600 V VGE = 15 V IC = 40 A TJ = 150°C

85 200

58 62 300 350 400 450

3 2.5 2 1.5 1 0.5 0

38 42 46

34 30 26 22

18 38 42 46 50 54 58 62

5 4 3 2 1 0 12

8

4

0

4 3.5 3 2.5 2 1.5 1 0.5 0

TYPICAL CHARACTERISTICS

Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. V_CE

Rg, GATE RESISTOR (W) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

75 65 55 45 35 25 15 5 10 100 1000 10000

725 675 625 575 525 475 425 375 4

Figure 15. Switching Time vs. V_CE Figure 16. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

725 675 625 575 525 475 425 1375 10 100 1000

Figure 17. Reverse Bias Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V)

SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ)

SWITCHING TIME (ns) IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

85 t_f

t_d(off)

V_CE = 600 V V_GE = 15 V I_C = 40 A T_J = 150°C

775 V_GE = 15 V I_C = 40 A Rg = 10 W TJ = 150°C

775 t_f

td(off)

V_GE = 15 V I_C = 40 A Rg = 10 W T_J = 150°C

3.5 3 2.5 2 1.5 1 0.5 1 0

1000 100

10 0.011

0.1 1 10 100 1000

50 ms 100 ms 1 ms

dc operation

Single Nonrepetitive Pulse T_C = 25°C Curves must be derated linearly with increase in temperature

1000 100

10 11

10 100 1000

V_GE = 15 V, T_C = 125°C

Figure 18. IGBT Transient Thermal Impedance PULSE TIME (sec)

THERMAL RESPONSE (ZqJC)

Figure 19. Diode Transient Thermal Impedance PULSE TIME (sec)

THERMAL RESPONSE (ZqJC)

50% Duty Cycle 20%

10%

5%

2%

1%

Single Pulse

50% Duty Cycle 20%

10%

5%

2%

1%

Single Pulse 0.001

0.01 0.1 1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

R_qJC = 0.48

0.001 0.01 0.1 1 10

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100

R_qJC = 1.5

Junction Case

C₁ C₂

R₁ R₂ R_n

Ci = ti/Ri

Duty Factor = t₁/t₂ Peak TJ = PDM x Z_qJC + TC

C_n

ti (sec) 1.0E−4 1.76E−4 0.002 0.03

0.1 2.0 R_i (°C/W) 0.01616 0.04030 0.060

0.090 0.176 0.093

Junction Case

C1 C2

R₁ R₂ R_n

C_i = ti/R_i

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

Cn

ti (sec) 1.48E−4

0.002 0.03 0.1 2.0 Ri (°C/W) 0.19655

0.414 0.5 0.345 0.0934

Figure 21. Definition of Turn Off Waveform

CASE 340L ISSUE G

DATE 06 OCT 2021

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

STYLE 3:

PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

SCALE 1:1

STYLE 1:

PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

STYLE 2:

PIN 1. ANODE 2. CATHODE (S) 3. ANODE 2 4. CATHODES (S)

STYLE 4:

PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

XXXXXXXXX AYWWG

STYLE 6:

PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 STYLE 5:

PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

98ASB15080C

DOCUMENT NUMBER: Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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