JAXA Repository AIREX: 最新デバイスの耐放射線性強化技術に関する検討委員会: 平成20年度成果報告書

宇宙航空研究開発機構契約報告

JAXA Ｃｏｎｔｒａｃｔ Ｒｅｐｏｒｔ

最新デバイスの耐放射線性強化技術に関する検討委員会

平成20年度 成果報告書

2009年8月

宇宙航空研究開発機構

August 2009 作成元 HIREC株式会社

Prepared by

࣮࣌ࢪ

1㻌 䛿䛨䜑䛻 ... 1

2 ᴗົ䛾┠ⓗ ... 1

3 ᴗົᐇ᪋⤖ᯝ ... 1

3.1㻌 ⪏ᨺᑕ⥺ᛶᙉ໬ᢏ⾡ ... 1

3.1.1㻌 ⪏ᨺᑕ⥺ᙉ໬ᢏ⾡䛻㛵䛩䜛᳨ウᮦᩱ䛾ㄪᰝ ... 1

3.1.2㻌 ᳨ウጤဨ఍䛾タ⨨ ... 5

3.1.3㻌 ጤဨ఍άື ... 6

3.1.4㻌 ⪏ᨺᑕ⥺ᙉ໬ᢏ⾡ ... 7

3.1.4.1 ༙ᑟయ⣲Ꮚ䛻ᑐ䛩䜛ᨺᑕ⥺↷ᑕຠᯝ䛾ືྥ ... 7

3.1.4.2 ㄪᰝᩥ⊩ ... 7

3.1.4.3 SET䛻㛵䛩䜛Ⓨ⾲ ... 8

3.1.4.4 SEU/SEFI㛵㐃䛾Ⓨ⾲ ... 11

3.1.4.5 TID㛵㐃Ⓨ⾲ ... 15

3.1.4.6 䜎䛸䜑 ... 19

3.2 ᳨ウᩥ⊩... 20

3.2.1 䝕䜱䞊䝥䡡䝃䝤䝭䜽䝻䞁CMOS䛻䛚䛡䜛SET䝟䝹䝇䜈䛾䜴䜵䝹ཬ䜃䝃䝤䝇䝖䝺䞊䝖㟁 ఩ኚㄪ䛾ᙳ㡪 ... 20

3.2.2 130-nm࠾ࡼࡧ90-nm CMOS࡟࠾ࡅࡿࢹ࢕ࢪࢱࣝSETࣃࣝࢫᖜࡢ≉ᚩ ... 25

3.2.3 䝅䞁䜾䝹䜲䝧䞁䝖ᙉ໬䛧䛯130nm-CMOS䛾PLL䛻䛴䛔䛶 ... 32

3.2.4㻌㧗㞟✚NANDᆺ࠾ࡼࡧNORᆺࣇࣛࢵࢩ࣓ࣗࣔࣜࡢࢩࣥࢢࣝ࢖࣋ࣥࢺ≉ᛶ ... 40

3.2.5 㟼Ṇ㌶㐨ୖ䛾ၟ⏝0.25μm CMOS SRAM䛾SEUᛶ⬟䛾ᩘ್ィ⟬䛸䛾ẚ㍑ ... 46

3.2.6 ࢩࣥࢢࣝ࢖࣋ࣥࢺຠᯝゎᯒ࡟࠾ࡅࡿ࢖࢚࢜ࣥࢿࣝࢠ࣮࡜᰾✀ࡢᙳ㡪 ... 52

3.2.7 ༢Ⰽ࢚ࢿࣝࢠ࣮୰ᛶᏊ※ࢆ⏝࠸ࡓ SRAM ࡢ 1-10MeV ୰ᛶᏊ㉳ᅉࡢࢩࣥࢢࣝ ࢖࣋ࣥࢺ ࢔ࢵࣉࢭࢵࢺ ... 57

3.2.8 65nm SOI CMOS ᢏ⾡䛻䛚䛡䜛䝅䞁䜾䝹䜲䝧䞁䝖䜰䝑䝥䝉䝑䝖䜢ᢚไ䛩䜛䝷䝑䝏䝕䝄 䜲䞁ᡭἲ ... 64

3.2.9 ࣉࣟࢺࣥឤཷᛶࢆィ⟬ࡍࡿࡓࡵࡢ㜈್௨ୗࡢ㔜࢖࢜ࣥ཯㌿᩿㠃✚ࡢ౑⏝ ... 74

3.2.10 㔜䜲䜸䞁↷ᑕ䛻䜘䜛䝟䝽䞊MOSFET䛾ຍ㏿ⓗ䛺ຎ໬ ... 81

3.2.11㻌ࣂ࢖࣏࣮ࣛ㓟໬⭷୰ࡢỈ⣲ศᏊ࡟ࡼࡿᨺᑕ⥺↷ᑕ࡛ࡢຎ໬࣓࢝ࢽࢬ࣒ ... 92

3.2.12 ᴟⷧHfO2-MOSFETࡢᨺᑕ⥺↷ᑕ࡟ࡼࡿ㟁Ⲵᤕ⋓ ... 98

5 ᡂᯝ䛾䜎䛸䜑 ... 114

6 ῧ௜㈨ᩱ ... 114

... 115

... 143

㸺ῧ௜㸼

1 䛿䛨䜑䛻㻌

ᮏ᭩䛿䚸JAXA Ẋ䛾ᴗົጤク JX-PSPC-253152䛂ᖹᡂ 20 ᖺᗘ㻌 㒊ရ䝥䝻䜾䝷䝮ᨭ᥼㻌 ㄪ㐩௙ᵝ

᭩䠄ጤク䠅䛃䛾4.2㡯(4)䛻ᇶ䛵䛔䛶HIRECᰴᘧ఍♫䛜ᐇ᪋䛧䛯䛂᭱᪂䝕䝞䜲䝇䛾⪏ᨺᑕ⥺ᛶᙉ໬ᢏ

⾡䛻㛵䛩䜛᳨ウጤဨ఍䛾㛤ദᨭ᥼䛃䛾ᴗົ⤖ᯝ䛻䛴䛔䛶䜎䛸䜑䛯䜒䛾䛷䛒䜛䚹

2 ᴗົ䛾┠ⓗ

᭱ඛ➃ᢏ⾡ࢆ⏝࠸ࡓ㒊ရࡣࠊ㧗ᶵ⬟໬㸭㧗㞟✚໬ࡢせồ࡟క࠸㞟✚ᅇ㊰ࡢᚤ⣽໬ࡀ㐍ࢇ࡛࠸

ࡿࡀࠊࡑࡢ୍᪉࡛ࠊᨺᑕ⥺࡟ࡼࡿᙳ㡪ࡶཷࡅࡸࡍࡃ࡞ࡗ࡚ࡁ࡚࠾ࡾࠊᨺᑕ⥺࡟ࡼࡗ࡚Ⓨ⏕ࡍࡿ

ᵝࠎ࡞⌧㇟ࡶᚑ᮶ࡢࡶࡢ࡜␗࡞ࡗ࡚ࡁ࡚࠸ࡿ࡜⪃࠼ࡽࢀࡿࠋࡲࡓࠊᚑ᮶ࡢ⪏ᨺᑕ⥺ᛶヨ㦂᪉ἲ

࡟ࡘ࠸࡚ࡶࠊ㐺ṇ࡟ุ᩿࡛ࡁࡿヨ㦂᪉ἲࢆㄪᰝࡋ☜❧ࡋ࡚࠸ࡃᚲせࡀ࠶ࡿࠋࡇࢀࡽ࡟ࡘ࠸࡚᭷

㆑⪅࡛ᵓᡂࡉࢀࡿ᳨ウጤဨ఍ࢆタ⨨ࡋࠊᅜෆእࡢᩥ⊩➼ࢆㄪᰝࡋࡓୖ࡛ヨ㦂᪉ἲࢆྵࡵࡓ⪏ᨺ

ᑕ⥺ᛶᙉ໬ᢏ⾡ືྥ࡟㛵ࡍࡿㄪᰝ᳨ウࢆ⾜ࡗࡓࠋ

3 ᴗົᐇ᪋⤖ᯝ

3.1 ⪏ᨺᑕ⥺ᛶᙉ໬ᢏ⾡㻌

3.1.1 ⪏ᨺᑕ⥺ᙉ໬ᢏ⾡䛻㛵䛩䜛᳨ウᮦᩱ䛾ㄪᰝ㻌

㏆ᖺ䛾༙ᑟయ䝕䝞䜲䝇䛾ᚤ⣽໬䚸㧗ᐦᗘ໬ཬ䜃㧗ᶵ⬟໬䛿┠ぬ䜎䛧䛔䜒䛾䛜䛒䜛䚹≉䛻ᆅୖ⏝༙

ᑟయ䝕䝞䜲䝇䜢Ᏹᐂ⏝㒊ရ䛻㌿⏝䛩䜛COTS(Commercial off the Shelf)䛻㛵䛩䜛᳨ウ䛿Ḣ⡿䛾

Ᏹᐂᶵ㛵䛻䛚䛔䛶㛗ᖺᐇ᪋䛥䜜䛶䛔䜛䚹COTSၥ㢟䛻㛵䛧䛶䛿䚸ᆅୖ⏝㒊ရ䛸Ᏹᐂ⏝㒊ရ䛾Ỵᐃⓗ

䛺㐪䛔䛸䛺䜛⪏ᨺᑕ⥺ᛶ䜢㑊䛡䛶㆟ㄽ䛩䜛䛣䛸䛿䛷䛝䛺䛔䚹䛣䛾䛯䜑䚸ྛᅜ䛾Ᏹᐂᶵ㛵䛷䛿䝥䝻䝉䝇

䜔ᵓ㐀䛻㛵䛧䛶᭱ඛ➃ᢏ⾡䜢ホ౯䛧䛶䛔䜛䚹䜎䛯䚸ᚤ⣽໬➼䛻క䛳䛶᪂䛯䛻☜ㄆ䛥䜜䛯⌧㇟䛻㛵䛧䛶

䜒Ꮫ఍➼䛻䛚䛔䛶άⓎ䛻㆟ㄽ䛥䜜䛶䛔䜛䚹䛣䛾䜘䛖䛺ᢏ⾡㠉᪂䛜㐍䜐୰䚸䛔䛛䛻༙ᑟయ䝕䝞䜲䝇䛾⪏

ᨺᑕ⥺ᛶ䜢㐺ṇ䛻ホ౯䛩䜛䛛䛜䚸㔜せ䛺ㄢ㢟䛸䛺䛳䛶䛔䜛䚹

䛣䜜䜙䛾⫼ᬒ䜢㋃䜎䛘䛶䚸ᮏᖺᗘ䛾⪏ᨺᑕ⥺ᛶᙉ໬ᢏ⾡䛻㛵䛩䜛᳨ウᮦᩱ䛾ㄪᰝ䛿䚸ᑐ㇟䝕䝞䜲

䜽⣲Ꮚ䚸SRAM䚸FPGA䚸High-k 䝕䝞䜲䝇䚸䝟䝽䞊䝕䝞䜲䝇䛻䛴䛔䛶䜢䚸⌧㇟䛸䛧䛶䝖䞊䝍䝹䝗䞊䝈⌧

㇟䠄ELDRS䜢ྵ䜐䠅䚸䝅䞁䜾䝹䜲䝧䞁䝖⌧㇟䚸㝧Ꮚ䞉୰ᛶᏊ᰾཯ᛂ䝅䞁䜾䝹䜲䝧䞁䝖䚸ኚ఩ᦆയຠᯝ䛻

䛴䛔䛶䛾᝟ሗ䜢ㄪᰝ䛧䛯䚹

䛭䛾⤖ᯝ䚸༙ᑟయ䝕䝞䜲䝇䛻ᑐ䛩䜛⪏ᨺᑕ⥺ᛶ䜢◊✲䛩䜛Ꮫ఍䛷䛿ୡ⏺᭱㧗ᓠ䛾 IEEE

Nuclear and Space Radiation Effects Conference(NSREC:2007ᖺ7᭶⡿ᅜ䝝䝽䜲 䝩䝜䝹䝹䛷

㛤ദ)䛷Ⓨ⾲䛥䜜䛯ㄽᩥ䛛䜙14௳䜢᳨ウᮦᩱ䛸䛧䛶㑅ᐃ䛧䛯䚹

⾲ 3.1.1-1㻌 ᳨ウᮦᩱ䛾ᩥ⊩୍ぴ

ศ㢮 ᩥ ⊩ ྡ ᑐᛂ䛾ᮏ᭩㡯␒

ฟ඾(1_{)䢉䢛䡬䡸䢚ᩘ}

SET

䝕䜱䞊䝥䡡䝃䝤䝭䜽䝻䞁 CMOS 䛻䛚䛡䜛 SET 䝟䝹䝇䜈䛾䜴䜵䝹ཬ䜃䝃䝤䝇䝖

䝺䞊䝖㟁఩ኚㄪ䛾ᙳ㡪 3.2.1㡯

Effect of Well and Substrate Potential modulation on Single Event

pulse Shape in Deep Submicron CMOS P2407

SET

130-nm࠾ࡼࡧ90-nm CMOS࡟࠾ࡅࡿࢹ࢕ࢪࢱࣝSETࣃࣝࢫᖜࡢ≉ᚩ 3.2.2㡯

Characterization of Digital Single Event Transient Pulse-Widths in

130-nm and 90-nm CMOS Technologies P2506

SET

䝅䞁䜾䝹䜲䝧䞁䝖ᙉ໬䛧䛯130nm-CMOS䛾PLL䛻䛴䛔䛶 3.2.3㡯

A Single-Event-Hardened Phase-Locked Loop Fabricated in 130 nm

CMOS P2012

SEU

㧗㞟✚NANDᆺ࠾ࡼࡧNORᆺࣇࣛࢵࢩ࣓ࣗࣔࣜࡢࢩࣥࢢࣝ࢖࣋ࣥࢺ≉

ᛶ 3.2.4㡯

Single Event Effect Characterization of High Density Commercial

NAND and NOR Nonvolatile Flash Memories P2547

SEU

㟼Ṇ㌶㐨ୖ䛾ၟ⏝0.25μm CMOS SRAM䛾SEUᛶ⬟䛾ᩘ್ィ⟬䛸䛾ẚ

㍑ 3.2.5㡯

Correlation of Prediction to On-Orbit SEU Performance for a

Commercial 0.25-m CMOS SRAM P2525

SEU

ࢩࣥࢢࣝ࢖࣋ࣥࢺຠᯝゎᯒ࡟࠾ࡅࡿ࢖࢚࢜ࣥࢿࣝࢠ࣮࡜᰾✀ࡢᙳ㡪 3.2.6㡯

Impact of Ion Energy and Species on Single Event Effects Analysis P2312

SEU

༢Ⰽ࢚ࢿࣝࢠ࣮୰ᛶᏊ※ࢆ⏝࠸ࡓSRAMࡢ1-10MeV୰ᛶᏊ㉳ᅉࡢࢩࣥ

ࢢࣝ ࢖࣋ࣥࢺ ࢔ࢵࣉࢭࢵࢺ 3.2.7㡯

Single Event Upsets Induced by 1–10 MeV Neutrons in Static-RAMs

Using Mono-Energetic Neutron Sources P2149

SEU

65nm SOI CMOS ᢏ⾡䛻䛚䛡䜛䝅䞁䜾䝹䜲䝧䞁䝖䜰䝑䝥䝉䝑䝖䜢ᢚไ䛩䜛

䝷䝑䝏䝕䝄䜲䞁ᡭἲ 3.2.8㡯

Latch Design Techniques for Mitigating Single Event Upsets in 65

nm SOI Device Technology P2021

SEU

ࣉࣟࢺࣥឤཷᛶࢆィ⟬ࡍࡿࡓࡵࡢ㜈್௨ୗࡢ㔜࢖࢜ࣥ཯㌿᩿㠃✚ࡢ౑⏝ 3.2.9㡯

Using Subthreshold Heavy Ion Upset Cross Section to Calculate

Proton Sensitivity P2394

TID

㔜䜲䜸䞁↷ᑕ䛻䜘䜛䝟䝽䞊MOSFET䛾ຍ㏿ⓗ䛺ຎ໬ 3.2.10㡯

Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion

Irradiation P2181

TID

ࣂ࢖࣏࣮ࣛ㓟໬⭷୰ࡢỈ⣲ศᏊ࡟ࡼࡿᨺᑕ⥺↷ᑕ࡛ࡢຎ໬࣓࢝ࢽࢬ࣒ 3.2.11㡯

Mechanisms of Enhanced Radiation-Induced Degradation Due to

ศ㢮 ᩥ ⊩ ྡ ᑐᛂ䛾ᮏ᭩㡯␒ ฟ඾(1_{)䢉䢛䡬䡸䢚ᩘ}

TID

ᴟⷧHfO2-MOSFETࡢᨺᑕ⥺↷ᑕ࡟ࡼࡿ㟁Ⲵᤕ⋓ 3.2.12㡯

Radiation Induced Charge Trapping in Ultrathin HfO2-Based

MOSFETs P1883

TID

SRAMࢭࣝ࡟ᑐࡍࡿᨺᑕ⥺⪏ᛶタィࡢ᳨ウ 3.2.13㡯

Optimizing Radiation Hard by Design SRAM Cells P2028

TID

AlGaN/GaN HFET䛻䛚䛡䜛ప䜶䝛䝹䜼䞊㟁Ꮚ↷ᑕຠᯝ䛾ゎᯒ 3.2.14㡯

An Analysis of the Effects of Low-Energy Electron Irradiation of

AlGaN/GaN HFETs P1946

3.1.2 ᳨ウጤဨ఍䛾タ⨨㻌

3.1.1㡯䛷㑅ᐃ䛧䛯᳨ウᮦᩱ䜢᳨ウ䛩䜛䛯䜑䛻䚸኱Ꮫ䚸බⓗ◊✲ᶵ㛵䚸௻ᴗ➼䛾Ꮫ㆑᭷㆑⪅䛛䜙

ᵓᡂ䛥䜜䜛᳨ウጤဨ఍䜢⤌⧊䛧䚸ྛጤဨ䛻ጤკ䛧䛯䚹ጤკ䛧䛯ጤဨྡ䛸ᡤᒓ䚸ᙺ⫋䜢⾲ 3.1.2-1䛻♧

䛩ࠋ

⾲ 3.1.2-1 ᳨ウጤဨ୍ぴ⾲䠄ᩗ⛠␎䠅

༊ศ ጤဨྡ ᡤᒓྡ ᙺ⫋

1 㢳ၥ ኱す㻌 ୍ຌ HIREC䠄ᰴ䠅 㢳ၥ

2 ጤဨ㛗 ఀ㒊㻌 ⱥྐ 䠄ᰴ䠅᪥❧〇సᡤ㻌⏕⏘ᢏ⾡◊✲ᡤ ୺⟶◊✲ဨ

3 ๪ጤဨ㛗 ▮ᔱ㻌 Ꮥኴ㑻 ୕⳻㟁ᶵ䠄ᰴ䠅㻌 㧗࿘Ἴග䝕䝞䜲䝇〇సᡤ ㄢ㛗 4 ጤဨ ▼஭㻌 ⱱ ୕⳻㔜ᕤᴗ䠄ᰴ䠅㻌 ྡྂᒇㄏᑟ᥎㐍䝅䝇䝔䝮〇సᡤ ୺௵ 5 ጤဨ ⸨ᓥ㻌 ┤ே ᐩኈ㟁ᶵ䝕䝞䜲䝇䝔䜽䝜䝻䝆䞊䠄ᰴ䠅 㒊㛗

6 ጤဨ ▼࿴㻌 ᇶᐶ NECᮾⰪ䝇䝨䞊䝇䝅䝇䝔䝮䠄ᰴ䠅 ୺௵

7 ጤဨ 㧗ᶫ㻌 ⰾᾈ ᪥ᮏ኱Ꮫ ෸ᩍᤵ

8 ጤဨ ᖹᑿ㻌 ᩄ㞝 ⊂❧⾜ᨻἲே㻌᪥ᮏཎᏊຊ◊✲㛤Ⓨᶵᵓ ◊✲๪୺ᖿ

9 ጤဨ ⸨⏣㻌 ᐇ ἲᨻ኱Ꮫ ව௵ㅮᖌ

10 ጤဨ ᆤᒣ㻌 ㏱ 㧗䜶䝛䝹䜼䞊ຍ㏿ჾ◊✲ᶵᵓ ㅮᖌ

11 ጤဨ ῝⏣㻌 Ꮥྖ 䜏䛪䜋᝟ሗ⥲◊䠄ᰴ䠅 䡸䢂䡭䡶䢙䡷䢕䡼䢙䢀

12 ጤဨ ྜྷᮧ㻌 ᑦ㑻 䠄ᰴ䠅ᮾⰪ㻌 䝉䝭䝁䞁䝎䜽䝍䞊♫ ཧ஦

13 ጤဨ ▮స㻌 ಖኵ 䠄ᰴ䠅᪥❧〇సᡤ㻌⏕⏘ᢏ⾡◊✲ᡤ ୺௵◊✲ဨ

14 ጤဨ ὸ㔝㻌 ㏱ ୕⳻㟁ᶵ䠄ᰴ䠅㻌㙊಴〇సᡤ ᑓ௵

3.1.3 ጤဨ఍άື㻌

3.1.1㡯䛷㑅ᐃ䛧䛯᳨ウᮦᩱ䛿䚸ྛጤဨ䛻๭䜚ᙜ䛶᳨ウ䜢౫㢗䛧䛯䚹ྛጤဨ䛾ሗ࿌䛩䜛᳨ウෆᐜ

䛻䛴䛔䛶ᙜヱጤဨ఍䛻䛶ウ㆟䛧䚸䛭䜜䜙䜢㆟஦㘓䛸䛧䛶䜎䛸䜑䛯䚹

➨ 1 ᅇጤဨ఍䛻䛚䛔䛶䚸ఀ㒊ጤဨ㛗䜘䜚ᅜ㝿Ꮫ఍䠄IRPS (International Reliability Physics

Symposium)䠅➼䛾ཧຍሗ࿌䜢䚸➨2ᅇ䛷䛿䚸ྠ䛨䛟ఀ㒊ጤဨ㛗䜘䜚2008ᖺ7᭶䛻㛤ദ䛥䜜䛯IOLTS

(International On-Line Testing Symposium)䛾ᴫἣ䜢ሗ࿌䛧䛶䛔䛯䛰䛝䚸⪏ᨺᑕ⥺ᛶᢏ⾡䛻㛵䛧

䛶㆟ㄽ䜢⾜䛳䛯䚹䛥䜙䛻➨3ᅇ䛷䛿䚸ᖹᑿጤဨཬ䜃஦ົᒁ䜘䜚䚸2008ᖺ9᭶䛻䝣䜱䞁䝷䞁䝗䛻䛶㛤ദ䛥

䜜䛯RADECS (European Workshop on Radiation Effects on Components and Systems)ཧ

ຍሗ࿌䜢⾜䛳䛯䚹➨ 5 ᅇጤဨ఍䠄᭱⤊ᅇ䠅䛷䛿䚸஦ົᒁ䜘䜚 2008 ᖺ 9 ᭶䛻䜰䝸䝌䝘䛻䛶㛤ദ䛥䜜䛯

NSREC䛾ཧຍሗ࿌䜢⾜䛳䛯䚹䜎䛯䚸ఀ㒊ጤဨ㛗䛛䜙䚸ᮏጤဨ఍䜢⤫ᣓ䛧䛶ᮏᖺᗘ䛾⪏ᨺᑕ⥺ศ㔝䛾

ືྥ䛻䛴䛔䛶䜎䛸䜑䜢ሗ࿌䛧䚸஦ົᒁ䜘䜚ጤဨ఍㐠Ⴀ⤖ᯝ䛻䛴䛔䛶ሗ࿌䛧䛯䚹

ጤဨ఍䛾㆟㢟➼䜢⾲ 3.1.3-1䚸㓄௜㈨ᩱ䜢ῧ௜6-1䛻㆟஦㘓䜢ῧ௜6-2䛻ῧ௜䛩䜛

⾲ 3.1.3-1 ጤဨ఍ࡢ᪥᫬ࠊ㆟㢟࡞࡝

ᅇᩘ ᪥᫬䚸㆟㢟䛺䛹

➨1ᅇ 㛤ദ᪥᫬䠖2008ᖺ6᭶6᪥䠄㔠䠅

㛤ദሙᡤ䠖HIREC䠄ᰴ䠅㻌 ᕝᓮ஦ᴗᡤ

୺䛺㆟㢟䠖ᮏᖺᗘ᳨ウෆᐜ䛾ᴫせ

஦ົᒁ䛻䜘䜛ㄽᩥⓎ⾲ཬ䜃ウ㆟䠄1௳䠅 ᅜ㝿Ꮫ఍ཧຍሗ࿌

➨2ᅇ 㛤ദ᪥᫬䠖2008ᖺ7᭶25᪥䠄㔠䠅

㛤ദሙᡤ䠖HIREC䠄ᰴ䠅㻌 ᕝᓮ஦ᴗᡤ

୺䛺㆟㢟䠖ྛጤဨᢸᙜㄽᩥ䛾Ⓨ⾲ཬ䜃ウ㆟䠄4௳䠅

2008ᖺIOLTSሗ࿌

➨3ᅇ 㛤ദ᪥᫬䠖2008ᖺ10᭶3᪥䠄㔠䠅

㛤ദሙᡤ䠖HIREC䠄ᰴ䠅㻌 ᕝᓮ஦ᴗᡤ

୺䛺㆟㢟䠖ྛጤဨᢸᙜㄽᩥ䛾Ⓨ⾲ཬ䜃ウ㆟䠄4௳䠅

2008ᖺRADECSሗ࿌

➨4ᅇ 㛤ദ᪥᫬䠖2008ᖺ11᭶28᪥䠄㔠䠅

㛤ദሙᡤ䠖HIREC䠄ᰴ䠅㻌 ᕝᓮ஦ᴗᡤ

୺䛺㆟㢟䠖ྛጤဨᢸᙜㄽᩥ䛾Ⓨ⾲ཬ䜃ウ㆟䠄4௳䠅

➨5ᅇ 㛤ദ᪥᫬䠖2009ᖺ2᭶27᪥䠄㔠䠅

㛤ദሙᡤ䠖HIREC䠄ᰴ䠅㻌 ᕝᓮ஦ᴗᡤ

୺䛺㆟㢟䠖ྛጤဨᢸᙜㄽᩥ䛾Ⓨ⾲ཬ䜃ウ㆟䠄1௳䠅

2008ᖺNSRECሗ࿌

ጤဨ఍㐠Ⴀ䛾ሗ࿌

3.1.4 ⪏ᨺᑕ⥺ᙉ໬ᢏ⾡㻌

3.1.4.1 ༙ᑟయ⣲Ꮚ䛻ᑐ䛩䜛ᨺᑕ⥺↷ᑕຠᯝ䛾ືྥ㻌

༙ᑟయ⣲Ꮚ䛾ᚤ⣽໬䛜㐍䜐୰䛷䚸㞟✚ᅇ㊰䛾㧗ᐦᗘ໬䚸኱つᶍ໬䛜㐍䜣䛷䛔䜛䚹䛣䜜䜎䛷䛿Ᏹ

ᐂ⏝༙ᑟయ⣲Ꮚ䛷㔜せ䛺ၥ㢟Ⅼ䛷䛒䛳䛯䚸㞟✚ᅇ㊰䛾ᨺᑕ⥺䛻䜘䜛ຎ໬䚸ㄗືస䛜䚸ᆅୖ䛷౑䜟

䜜䜛⣲Ꮚ䛻䛚䛔䛶䜒䚸Ᏹᐂ⥺୰ᛶᏊ䛻䜘䜛䝅䞁䜾䝹䜲䝧䞁䝖䛸䛧䛶ၥ㢟䛜㢧ᅾ໬䛧䛶䛝䛶䛔䜛䚹䛥䜙䛻䚸

༙ᑟయ⣲Ꮚ䛻౑⏝䛥䜜䜛ᮦᩱ䜒ከᒱ䛻ர䛳䛶䛚䜚䚸䛭䜜䜙䜢Ᏹᐂᨺᑕ⥺⎔ቃ䛷⏝䛔䜛ሙྜ䛾ၥ㢟

䜢᫂䜙䛛䛻䛩䜛ྲྀ䜚⤌䜏䜒⾜䜟䜜䛶䛔䜛䚹䜎䛯䚸⪏ᨺᑕ⥺ᙉ໬ᢏ⾡䜒䚸ᮦᩱ䚸⣲Ꮚᵓ㐀䚸ᅇ㊰ⓗ䛺㠃

䛛䜙ከ䛟䛾ᥦ᱌䛜䛺䛥䜜䛶䛔䜛䚹௒ᖺᗘ䛿䛣䛾䜘䛖䛺≧ἣ䛾୰䛛䜙䚸2007ᖺ7᭶䛻⡿ᅜ䝝䝽䜲䛷㛤ദ

䛥 䜜 䛯 䚸 IEEE(The Institute of Electrical and Electronics Engineers) 䛾 2007

NSREC(Nuclear and Space Radiation Conference, Hilton Hawaiian Village, Honolulu,

Hawaii, July 23-27)䛷Ⓨ⾲䛥䜜䛯ㄽᩥ䛷IEEE Trans. Nuc. Sci., Vol. 54, No.6 䛻ᥖ㍕䛥䜜䛯䜒

䛾䛛䜙䚸㔜せ䛸ᛮ䜟䜜䜛䜒䛾䜢㑅ᢥ䛧䛶ㄪᰝ䛧䛯䚹

3.1.4.2 ㄪᰝᩥ⊩㻌

௒ᖺᗘ䛾ㄪᰝᩥ⊩䛿ḟ⾲䛾14⦅䛷䚸SET㛵ಀ3⦅䚸TID㛵ಀ5⦅䚸SEU㛵ಀ6⦅䛷䛒䜛䚹

ಶู䛾ෆᐜ䛻䛴䛔䛶䛿 3.2 ⠇䛷㡯␒䛻ᚑ䛳䛶ヲ㏙䛩䜛䛜ḟ⠇௨㝆䛷䚸ศ㢮㡯┠䛤䛸䛾ᴫἣ䛸䝖

䝢䝑䜽䝇䜢䜎䛸䜑䜛䚹

⾲3.1.4-1. ㄪᰝᩥ⊩୍ぴ

3.2.1 SET 2407-₂₄₁₂ DasGupta, S.; Witulski, A.F.; Bhuva, B.L.; Alles, M.L.; Reed, R.A.;Amusan, O.A.;Ahlbin, J.R.; Schrimpf, R.D.; Massengill, L.W.

Effect of Well and Substrate Potential modulation on Single Event pulse Shapein Deep Submicron CMOS

3.2.2 SET 2506-₂₅₁₁

Narasimham, B.; Bhuva, B. L.; Schrimpf, R. D.; Massengill, L. W.; Gadlage, M. J.;Amusan, O. A.; Holman, W. T.; Witulski, A. F.; Robinson, W. H.; Black, J. D.;Benedetto, J. M.; Eaton, P. H.

Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and90-nm CMOS Technologies

3.2.3 SET 2012-₂₀₂₀ Loveless, T.D.; Massengill, L.W.; Bhuva, B.L.; Holman, W.T.; Reed,R.A.; McMorrow,D.; Melinger, J.S.; Jenkins, P.

A Single-Event-Hardened Phase-Locked Loop Fabricated in 130 nm CMOS

SEU/ SEFI

3.2.5 SEU 2525-₂₅₃₃ Hansen, D.L.; Jobe, K.; Whittington, J.; Shoga, M.; Sunderland, D.A. Correlation of Prediction to On-Orbit SEU Performance_{for a Commercial 0.25-m CMOS SRAM}

3.2.6 SEU 2312-₂₃₂₁

Reed, R.A.; Weller, R.A.; Mendenhall, M.H.; Lauenstein, J.-M.; Warren, K.M.; Pellish,J.A.; Schrimpf, R.D.; Sierawski, B.D.; Massengill, L.W.; Dodd, P.E.; Shaneyfelt, M.R.;Felix, J.A.; Schwank, J.R.; Haddad, N.F.; Lawrence, R.K.; Bowman, J.H.; Conde, R.

Impact of Ion Energy and Species on Single Event Effects Analysis

3.2.7 SEU 2149-₂₁₅₅ Baggio, J.; Lambert, D.; Ferlet-Cavrois, V.; Paillet, P.; Marcandella, C.;Duhamel, O.

Single Event Upsets Induced by 1–10 MeV Neutrons in Static-RAMs UsingMono-Energetic Neutron Source

3.2.8 SEU 2021-₂₀₂₇ KleinOsowski, A.; Cannon, E. H.; Gordon, M. S.; Heidel, D. F.; Oldiges,P.; Plettner, C.;Rodbell, K. P.; Rose, R. D.; Tang, H. H. K.

Latch Design Techniques for Mitigating Single Event Upsets in 65 nm SOIDevice Technology

3.2.9 SEU 2394-₂₃₉₉ Inguimbert, C.; Duzellier, S.; Nuns, T.; Bezerra, F. Using Subthreshold Heavy Ion Upset Cross Section to_{Calculate ProtonSensitivity} 3.2.10 TID 2181-₂₁₈₉ Felix, J.A.; Shaneyfelt, M.R.; Schwank, J.R.; Dalton, S.M.; Dodd, P.E.;Witcher, J.B.

Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation

3.2.11 TID

1913-1919

Chen, X.J.; Barnaby, H.J.; Vermeire, B.; Holbert, K.; Wright, D.; Pease, R.L.; Dunham,G.; Platteter, D.G.; Seiler, J.; McClure, S.; Adell, P.

Mechanisms of Enhanced Radiation-Induced Degradation Due to ExcessMolecular Hydrogen in Bipolar Oxides

3.2.12 TID 1883-₁₈₉₀ Dixit, S. K. Zhou, X. J. Schrimpf, R. D. Fleetwood, D. M. Pantelides, S.T. Choi, R.Bersuker, G. Feldman, L. C.

Radiation Induced Charge Trapping in Ultrathin HfO2-Based MOSFETs

3.2.13 TID 2028-₂₀₃₆ Clark, L.T.; Mohr, K.C.; Holbert, K.E.; Xiaoyin Yao; Knudsen, J.; Shah,_H. Optimizing Radiation Hard by Design SRAM Cells 3.2.14 TID 1946-₁₉₅₂ McClory, J.W.; Petrosky, J.C.; Sattler, J.M.; Jarzen, T.A. An Analysis of the Effects of Low-Energy Electron_{Irradiation of AlGaN/GaNHFETs}

䝍䜲䝖䝹

3.2.4 2547-₂₅₅₃

3.1.4.3 SET䛻㛵䛩䜛Ⓨ⾲

⾲3.1.4-2䛻SET㛵㐃Ⓨ⾲䛾ᴫせ䜢䜎䛸䜑䜛䚹

ᚤ⣽໬䛻క䛳䛶䚸SET䝟䝹䝇Ἴᙧ䛜2㔜ᣦᩘ㛵ᩘᆺ䛛䜙䚸2䡚3ps䛾䝅䝱䞊䝥䛺䝢䞊䜽䛾ᚋ䛷䝥

䝷䝖䞊䜢ᣢ䛴䜘䛖䛻䛺䛳䛶䛔䜛䚹䛣䜜䛿ᚤ⣽໬䛻క䛳䛶㏻㐣䜲䜸䞁䛜ᙧᡂ䛩䜛㟁ሙ䛻 pn ᥋ྜ䛰䛡䛷

䛺䛟䜴䜵䝹䝁䞁䝍䜽䝖䛺䛹ᵝ䚻䛺䝁䞁䝫䞊䝛䞁䝖䛜ໟྵ䛥䜜䜛䛣䛸䛻῝䛟㛵ಀ䛩䜛䚹

DasGupta 䜙䛿ᅗ 3.1.4-1 䛻♧䛩䜘䛖䛻䠈䝀䞊䝖㟁ᅽ䛜䜾䝷䜴䞁䝗䠄䝋䞊䝇㟁఩ Vdd䠅䛾᫬䛾

nMOSFET 䛾䝗䝺䜲䞁䛾䜲䜸䞁ධᑕ䛻䝕䝞䜲䝇䝅䝭䝳䝺䞊䝅䝵䞁䜢㐺⏝䛧䚸䛭䛾௚䜢ᅇ㊰䝅䝭䝳䝺䞊

䝅䝵䞁䛷ゎᯒ䛩䜛Mixed-Mode TCAD䝰䝕䝹䛷䝅䝭䝳䝺䞊䝅䝵䞁䜢ᐇ᪋䛧䛯䚹

䛭䛾⤖ᯝᅗ3.1.4-2 䛻♧䛩䜘䛖䛻䚸ప LET 䛷䛿ᚑ᮶䛛䜙ゝ䜟䜜䛶䛔䜛䜘䛖䛻 2㔜ᣦᩘ㛵ᩘᆺ䛾

SET䝟䝹䝇䛻䛺䜛䛜䚸୰(10MeV/(mg/cm2_{)䚸㧗(40MeV/䠄mg/cm}2_{) LET䛷䛿䝥䝷䝖䞊䛜Ⓨ⏕䛩䜛䛣}

䛸䜢☜ㄆ䛧䛯䚹

ゎᯒ⤖ᯝ䛻ᇶ䛵䛔䛶䝯䜹䝙䝈䝮䜢⪃ᐹ䛧䚸nMOS FET䛾䝗䝺䜲䞁䛻㧗LET䛾䜲䜸䞁䛜ධᑕ䛩䜛䛸

p+䝁䞁䝍䜽䝖䜒䜲䜸䞁䛾䝖䝷䝑䜽䛻ໟྵ䛥䜜䚸Ⓨ⏕㟁Ⲵ䛜኱䛝䛔ศ䛭䜜䛰䛡኱䛝䛟 Vw 䛰䛡䝫䝔䝅䝱䝹 䛜పୗ䛧䚸Vdd䛛䜙㥑ືຊ䛻ᛂ䛨䛶ᚤᑠ㟁ὶ䛜ὶ䜜⥆䛡䜛䛯䜑䚸䝥䝷䝖䞊䛜䛷䛝䜛䛸ㄝ᫂䛧䛯䚹

ᅗ3.1.4-1. SETࣃࣝࢫࡢMixed TCADࣔࢹࣝ

⾲3.1.4-2. SET㛵㐃Ⓨ⾲䛾ᴫせ

㡯␒ ᴫせ

䠏䠊䠎䠊䠍 䕔ᚤ⣽໬䛻క䛳䛶䚸SET䝟䝹䝇Ἴᙧ䛜2㔜ᣦᩘ㛵ᩘᆺ䛛䜙䚸2~3ps䛾䝅䝱䞊䝥䛺䝢䞊䜽䛾ᚋ䛷䝥䝷 䝖䞊䜢ᣢ䛴䜘䛖䛻䛺䛳䛶䛔䜛䚹

䕔䛣䜜䛿ᚤ⣽໬䛻క䛳䛶㏻㐣䜲䜸䞁䛜ᙧᡂ䛩䜛㟁ሙ䛻pn᥋ྜ䛰䛡䛷䛺䛟䜴䜵䝹䝁䞁䝍䜽䝖䛺䛹ᵝ䚻 䛺䝁䞁䝫䞊䝛䞁䝖䛜ໟྵ䛥䜜䜛䛣䛸䛻῝䛟㛵ಀ䛩䜛䚹

䕔_{Mixed-Mode TCAD}䛷䝯䜹䝙䝈䝮䜢⪃ᐹ䚸_NMOS䛾_Drain䡚_Source䡚_Well䝁䞁䝍䜽䝖㛫䛾䝫䝔䞁 䝅䝱䝹ኚື䛻㉳ᅉ䛸ゎ᫂䚹୰/㧗LET(10MeV/(mg/cm2_{))䛷䝥䝷䝖䞊Ⓨ⏕䚹䛭䜜௨ୗ䛷䛿䚸2㔜ᣦᩘ㛵}

ᩘᆺ䚹

䠏䠊䠎䠊䠎 䕔130nm, 90nm CMOS䛻䛴䛔䛶㔜䜲䜸䞁ධᑕ䛷Ⓨ⏕䛩䜛䝟䝹䝇ᖜ䜢 ᐃ䚹䝏䝑䝥ෆⶶᆺ䛾䝟䝹䝇 ᖜ⮬ື ᐃᅇ㊰䛷 ᐃ䚹

䕔SET䛾᩿㠃✚䛜᭱䜒኱䛝䛟䛺䜛䝟䝹䝇ᖜ䛿130nm䛷400-700ps䚸90nm䛷500-900ps䚹

䕔_TCAD䛻䜘䜛ゎᯒ䛷䝟䝹䝇䛾ᖜ䛿ධᑕ䛩䜛఩⨨䛻౫Ꮡ䛩䜛䛣䛸䛜ุ᫂䚹

䕔ᚤ⣽໬䛻క䛳䛶䝟䝹䝇ᖜ䛿ቑຍ䛩䜛䛾䛷_SET䛿௒ᚋ䛥䜙䛻㔜せ䚹

䠏䠊䠎䠊䠏 䕔PLL䛾SET䛻ᑐ䛩䜛⬤ᙅᛶ䛿䝅䝇䝔䝮䝟䝣䜷䞊䝬䞁䝇䛻኱䛝䛺ᙳ㡪䜢୚䛘䜛䚹

䕔IBM䛾CMRF8RF CMOS䝔䜽䝜䝻䝆䞊䛷PLL䜢タィ〇㐀䚸TPA䠄Two-Photon-Absorption, 1.8-30nJ

௨ୗ䛷ホ౯䠅䛾⿬㠃ධᑕ䛷SET⪏ᛶ䜢䝬䝑䝢䞁䜾䚹

䕔_VCO䠄㟁ᅽไᚚⓎ᣺ჾ䠅_{, C-CP}䠄ᚑ᮶ᆺ㟁ὶ䝧䞊䝇䝏䝱䞊䝆䝫䞁䝥䠅_{, V-CP}䠄_{RHBD(Radiation}

Hardened By Design)㟁ᅽ䢉䢚䡬䡹䝏䝱䞊䝆䝫䞁䝥䠅䛾3ᅇ㊰ᵓᡂ䛻䛴䛔䛶䝬䝑䝢䞁䜾ᐇ᪋䚹

Narasimham䜙䛿䚸130nm, 90nmCMOS䛻䛴䛔䛶㔜䜲䜸䞁ධᑕ䛷Ⓨ⏕䛩䜛䝏䝑䝥ෆⶶᆺ䛾䝟

䝹䝇ືᐃᅇ㊰䠄ᅗ3.1.4-3䠅䛷䝟䝹䝇䜢ᐃ䛧䚸LET䛸 SET䝟䝹䝇䛾2ḟ㠃䛷SET

㠃✚䜢➼㧗⥺䛷⾲⌧䛧䠄ᅗ 3.1.4-4䠅䚸SET 䛾㠃✚䛜᭱䜒኱䛝䛟䛺䜛䝟䝹䝇䛿 130nm 䛷

400-700ps䚸90nm䛷500-900ps䛸䛺䜛䛣䛸䜢♧䛧䛯䚹䛶䚸TCAD䛻䜘䜛ゎᯒ䛷䝟䝹䝇䛾䛿ධ

ᑕ䛩䜛఩⨨䛻౫ 䛩䜛䛣䛸䜢♧䛧䛯䚹ᚤ⣽໬䛻క䛳䛶䝟䝹䝇䛿ຍ䛩䜛䛾䛷䚸SET 䛿௒ᚋ䛥䜙䛻

㔜せ䛸䛺䜛䚹

ᅗ3.1.4-4. SET㠃✚䛾SET䝟䝹䝇䛸LET౫ ᛶ

130nm䚷(110䜲䞁䝞䞊䝍䝏䜵䞁䠅 90nm(1000䜲䞁䝞䞊䝍䝏䜵䞁䠅

ᅗ3.1.4-3. SET䝟䝹䝇ᐃᅇ㊰

ᅗ3.1.4-2. TCAD䝅䝭䝳䝺䞊䝅䝵䞁⤖ᯝ㻌

Loveless䜙䛿䚸PLL䛾SET䛻ᑐ䛩䜛ᛶ䛿䝅䝇G䝮䝟䞊䞁䝇䛻䛝䛺ᙳ㡪䜢䛘䜛䛣䛸

䛻┠䛧䚸IBM 䛾 CMRF8RF CMOS G䜽䝜䝻䝆䞊䛷 PLL 䜢タィ.㐀䚸TPA䠄Two Photon

Absorption䚸1.8-30nJ Öø䛷ホ౯䠅䛾Äìᑕ䛷 SET ⪏ᛶ䜢 VCO䠄㟁êไⓎj䠅䚸C-CP

䠄ÓñÝ㟁û䝧䞊䝇䝏ß䞊䝆䝫䞁䝥䠅䚸V-CP (RHBD (Radiation-Hardened By Design) 㟁ê

䝧䞊䝇䝏ß䞊䝆䝫䞁䝥䠅䛾3•²ᵓᡂ䠄ç3.1.4-5}↷䠅䛻䛴䛔䛶䚸ìᑕ఩⨨䜢ኚ䛘䛶䝑Ù䞁䜾䜢ᐇ

᪋䛧䛯䚹

C-CP䛷䛿 TPA䛷¼ᩘ䛾䜶䝷䞊䛜Ⓨ⏕䛧䚸ᅗ3.1.4-6 䛻♧䛩䜘䛖䛻䚸䝺䞊䝄䞊䜶䝛䝹䜼䞊2.5nJ

௨ୖ䛷䜶䝷䞊䛜Ⓨ⏕䛧䛿䛨䜑䜛䛣䛸䛜䜟䛛䛳䛯䚹

䜎䛯䚸ᅗ3.1.4-7䛻♧䛩䜘䛖䛻䚸V-CP(RHBD)䛿C-CP䜘䜚䜒䜶䝷䞊䝟䝹䝇䛾Ⓨ⏕ᩘ䛜2ᗘ䚸

䜎䛯䚸ᛂ㠃✚䜒99%ప䛷䛝䜛䛣䛸䛜ศ䛛䛳䛯䚹

ᅗ3.1.4.-6. C-CP䛾TPA䝑䝢䞁䜾⤖ᯝ䠄䛔㒊ศ

ධᑕ䛷䜶䝷䞊Ⓨ⏕䠅

C-CP䛾SEU䢋䡫䢇䢛䢙䡴䢚(b)2.5nJ (c䠅3.7nJ (d)7nJ

ᅗ3.1.4-7. C-CP,V-CP䛾䜶䝷䞊Ⓨ⏕ᩘ䛾࿘

Ἴᩘ౫ ᛶ

ᅗ3.1.4-5. DUT䛸PLL䛾䝻䝑䜽䜜ᐃᇶ

DUT䠄ᚑ᮶䛾PLL:CPLL䛸RHBD PLL:VPLL)

3.1.4.4 SEU/SEFI㛵㐃䛾Ⓨ⾲

⾲3.1.4-3䛻SEU/SEFI㛵Ï䛾Ⓨ⾲™š䜢䜎䛸䜑䜛䚹

Irom䜙䛿䚸NAND䠄Micron,Hynix, St Micro.,Samsun䚹䛶90nm䝥䝻䝉䝇䚹14Gb䠅

/NOR䠄Spansion 130nm䝥䝻䝉䝇䚹64Mb.䠅䝷䝑䝅íóð䝸䛻ᑐ䛩䜛㔜䜲䜸䞁䠄TAM,BNL䛷↷ᑕ䠅

䛻䜘䜛 SEE 䜢ホ౯䛧䛯䚹Micron 䛾 4Gb NAND 䝷䝑䝅íóð䝸䛷䛿䚸SEU 䛿 1×10 _cm2_/bit

䜸䞊䝎䞊䛷!O䛩䜛䚹Spansion♫䛾 NOR 䝷䝑䝅íóð䝸䛷䛿䚸SEFI䠄Readື/୰䛾኱つᶍ䜶

䝷䞊䚸LETth<10MeV/(mg/cm2_{)䠅䛜Ⓨ⏕䠄ᅗ3.1.4-8䠅䚹}

⾲3.1.4-3. SEU/SEFI㛵㐃ࡢⓎ⾲ᴫἣ

㡯␒ ᴫせ

䠏䠊䠎䠊䠐 䕔ᕷ㈍NAND䠄Micron, Hynix, St Micro., Samsung䚹඲䛶90nm䝥䝻䝉䝇䚹1-4Gb䠅/NOR䠄Spansion 130nm䝥䝻䝉䝇䚹64Mb.䠅䝣䝷䝑䝅䝳䝯䝰䝸䛻ᑐ䛩䜛㔜䜲䜸䞁(TAM,BNL)䛻䜘䜛SEEホ౯䚹

䕔SEU䠄1x10-11_cm2_{/bit䜸䞊䝎䠅䚸SEFI䠄Readືస୰䛾኱つᶍ䜶䝷䞊䚸NOR䛷ほ 䚹}

LETth<10MeV/(mg/cm2_{)䠅,◚ቯ⌧㇟䛜Ⓨ⏕䚹}

䕔㧗ᐦᗘNAND䝣䝷䝑䝅䝳䝯䝰䝸䛷䛾㧗㟁ὶ䝇䝟䜲䜽⌧㇟䠄䝞䜲䜰䝇༳ຍ᫬䛾䜏䚹200mA௨ୖ䠅䚸

NOR䝣䝷䝑䝅䝳䝯䝰䝸䛷䛾ᾘཤ⏝㧗㟁ᅽ䝏䝱䞊䝆䝫䞁䝥㒊䛷䛾◚ᦆ䜢ほ 䠄LET䠚 55MeV/(mg/cm2_{)䠅 䚹}

䠏䠊䠎䠊䠑 䕔Boeing Satellite Development Center 䛾ᦠᖏ㟁ヰ⏝㟼Ṇ⾨ᫍ䛻⏝䛔䛶䛔䜛DSP䠄ၟ⏝0.25μm CMOS ASIC䠅䛾ኴ㝧䝣䝺䜰Ⓨ⏕᫬䛾SEEホ౯䚹

䕔4kx32bit SRAM㒊䜢TAM䛷䛾⿬㠃䜲䜸䞁↷ᑕ䛷䠄䝕䞊䝍䝟䝍䞊䞁䛿All”0”䜎䛯䛿All”1”䠅ホ౯䚹

䕔CREME96䜢⏝䛔䛶RPP(Rectangular Parallel Pipe)䝰䝕䝹(䡔=y=(sat)1/2䠙2.5μm, z=2μm)䛷ホ౯䚹

SER䛿1.1x10-8_{, 8.1x10}-8 _{upset/day/bit䠄ኴ㝧άື䛻౫Ꮡ䚹㐣኱ホ౯䛾ྍ⬟ᛶ䛒䜚䚹䠅}

䠏䠊䠎䠊䠒 䕔ྠ䛨LET䛷䜒䜲䜸䞁✀䛸䜶䝛䝹䜼䞊䛜␗䛺䜛䛸SRAM䛾SEU᩿㠃✚䛜஧᱆㏆䛟␗䛺䜛౛䛜ሗ࿌䛥

䜜䛶䛔䜛䚹䠄⮫⏺㟁Ⲵ㔞䛜ᑠ䛥䛔᭱᪂䝕䝞䜲䝇䠅

䕔MRED䠄GEANT4䛻‽ᣐ䛧䛯䝰䞁䝔䜹䝹䝻䝅䝭䝳䝺䞊䝍䠅䛻IRPP (Integral RPP) 䝰䝕䝹

(2x2x2.5μm)䜢⏝䛔䛶SRAM䛾SEU᩿㠃✚䜢ホ౯䚹┤᥋㟁㞳䚸䜽䞊䝻䞁ᩓ஘䛻䜘䜛ཎᏊ㌿఩䠄㛫᥋ 㟁㞳䠅䚸᰾཯ᛂ䜢⪃៖䚹Qc䠙0.7~1pC䛷ᐇ ್䛸䜘䛟୍⮴䚹

䠏䠊䠎䠊䠓 䕔2.5, 4, 6, 14MeV䛾༢Ⰽ୰ᛶᏊ↷ᑕ䛻䜘䜚1~10MeV䛾SRAM䛾SEU᩿㠃✚䜢ホ౯䚹 䕔0.25_μm䜘䜚ᑠ䛥䛺䝥䝻䝉䝇䛷䛿䚸4~6MeV䛾୰ᛶᏊ䛻ᑐ䛧䛶䜒ẚ㍑ⓗ㧗䛔SEUឤᗘ䜢ᣢ䛴䚹

䕔⎔ቃ୰ᛶᏊ䛾ሙྜ䚸䛣䛾䜶䝛䝹䜼䞊⠊ᅖ䛾୰ᛶᏊ䛾SER䜈䛾ᐤ୚䛿10%⛬ᗘ䚹 䕔⾲⿬↷ᑕ䛷䛿᭱኱5.5ಸ䛾ᕪ䛜Ⓨ⏕䛧䛯䚹

䠏䠊䠎䠊䠔 䕔65nm CMOS SOI䠄body tie䛺䛧䠅䛾䝷䝑䝏ᅇ㊰䛾⥺䚸୰ᛶᏊ䛻䜘䜛SEU⪏ᛶྥୖἲ䚹

䕔6㏻䜚䛾䝷䝑䝏䜢᳨ウ䚹⥺䛾ධᑕゅ䜢ኚ䛘䜛䛣䛸䛻䜘䜚䚸཰㞟㟁Ⲵ㔞䜢ኚ໬䛥䛫䚸⮫⏺㟁Ⲵ㔞䜢 ồ䜑䛯䚹

䕔䝷䝑䝏䛧䛶䛔䜛䝕䞊䝍≧ែ䛷䚸⮫⏺㟁Ⲵ㔞䛜ኚ໬䚹

䕔㓄⥺ᒙ䛾ⷧ䛔䝷䝑䝏䛜⪏ᛶ㧗䚹㓄⥺ᒙ䛾ཌ䛔䝷䝑䝏䛷䜒䝣䜷䝽䞊䝗䝹䞊䝥䛾䜲䞁䝞䞊䝍䛜኱䛝䛔 ሙྜ䚸䜲䞁䝞䞊䝍㒊䛻ᐜ㔞䜢௜ຍ䛧䛯䝷䝑䝏䛾⪏ᛶ䛿㧗䛔䛜䚸㠃✚䞉䝍䜲䝭䞁䜾䜸䞊䝞䝦䝑䝗䛜኱䛝䛟 䛺䜛䚹

䠏䠊䠎䠊䠕 䕔పLET㔜䜲䜸䞁䛾SEU᩿㠃✚䜢⏝䛔䛯SEUឤཷᛶண ᪉ἲ䚹

䕔䛧䛝䛔್௨ୗ䛷䜒཯㌿䛜Ⓨ⏕䛩䜛Sᆺ᩿㠃✚᭤⥺䜢♧䛩⣲Ꮚ䛜ከ䛟䛒䜛䚹䛣䜜䛿᰾◚○཯ᛂ䛻 䜘䜛㧗䜶䝛䝹䜼䞊㔜䜲䜸䞁䛻㉳ᅉ䛩䜛䚹

§¨ˆ NAND rmUíóðᡧPû䝇䝟䜲䜽⌧㇟䠄䝞䜲䜰䝇"ຍ©䛾m䚹200mA Öୖ䠅䚸 NOR 䝷 䝑 䝅í ó ð䝸 䛷 䛿# $⏝ 㧗 㟁ê䝏ß䞊 䝆 䝫 䞁 䝥 㒊 䛷 䛾%ᦆ 䜢& 䠄LET'

55MeV/(mg/cm2_{,ç3.1.4-9)䠅䚹}

Hansen 䜙䛿䚸Boeing Satellite Development Center 䛾()㟁*⏝㟼Ṇ+,䛻⏝䛔䛶䛔䜛

DSP䠄ၟ⏝0.25μm CMOS ASIC䠅䛾8㝧䝺䜰Ⓨ0©䛾SEE䜢4k×32bit SRAM㒊䛻䛴䛔䛶

TAM䛷䛾Ä䜲䜸䞁↷ᑕ䛷䠄䝕䞊䝍䝟䝍䞊䞁䛿All”0”䜎䛯䛿All”1”䠅ホ౯䛧䛯䚹

䜎䛯䚸CREME96䛻RPP(Rectangular Parallel Pipe)ð䝕䝹(x=y=(sat)1/2-2.5μm,z=2μm)䜢

㐺⏝䛧䚸SEU䛿1.1×108_{, 8.1×10}8_{upset/day/bit䠄8㝧άື䛻 䚹ãホ౯䛾.⬟ᛶ䛒‹䚹䠅䛸}

䛔䛖⤖ᯝ䜢/䛯䚹

Reed 䜙䛿0⏺㟁÷1䛜ú䛥䛔᭱᪂䝕䝞䜲䝇䛷䛿—䛨 LET 䛷䜒䜲䜸䞁2䛸䝹䜼䞊䛜3䛺䜛䛸 SRAM䛾SEU㠃✚䛜2㏆䛟3䛺䜛4䛜ሗ࿌䛥䜜䛶䛔䜛䛣䛸䛻┠䛧䠈MRED䠄GEANT4䛻 5䛧䛯䝰䞁䝔䜹䝹䝻䝅䝭䝳䝺䞊䝍䠅䛻 IRPP(Integral RPP)䝰䝕䝹(2×2×2.5μm3_{)䠄ᅗ 3.1.4-10䠅䜢⏝}

䛔䛶SRAM䛾SEU㠃✚䜢ホ౯䚹┤᥋㟁6䚸䜽䞊䝻䞁78䛻䜘䜛ཎᏊ㌿఩䠄9᥋㟁6䠅䚸᰾཯ᛂ䜢

⪃:䚹Qc-0.7-1pC 䛷ᐇ್䛸䜘䛟୍;䛩䜛䛣䛸䜢♧䛧䛯䠄ᅗ 3.1.4-11䠅䚹䠄Hansen 䜙䛾䝰䝕䝹䜒ྵ

䜑䚸RPP䝰䝕䝹䛾䝃䜲䝈ཬ䜃0⏺㟁Ⲵ1䛜䚸⌧ᐇ6䜜䛧䛶኱䛝䛩<䜛䛸䛾ᣦ=䛒䜚䚹䠅

ᅗ3.1.4-9. Spansion ♫NOR䝣䝷䝑䝅䝳䝯䝰䝸

䛾SEFI

ᅗ3.1.4-8. Spansion♫NOR䝣䝷䝑䝅䝳䝯䝰䝸

䛾SEFI

ᅗ 3.1.4-11. SRAM ࡢ SEU ᩿㠃✚ᐇ ್࡜

MRED࡟ࡼࡿࢩ࣑࣮ࣗࣞࢩࣙࣥ⤖ᯝ

BaggioÚ2.5, 4, 6, 14MeV䛾>?୰ᛶᏊ↷ᑕ䛻䜘‹1~10MeV䛾0.18~0.45μm䝥䝻䝉䝇䛾 SRAM䛾SEUı䜢@䜑䛯䚹䛭䛾⤖ᯝ䚸ç3.1.4-12䛻䛩䜘䛖䛻0.25μm䜘‹ú䛥䛺䝥䝻䝉䝇

䛷䛿䚸4~6MeV䛾୰ᛶᏊ䛻ᑐ䛧䛶䜒ẚ㍑ⓗ㧗䛔SEUᗘ䜢áA䚸Ᏹᐂ⥺୰ᛶᏊ䛾¬Á䚸䛣䛾

䝹䜼䞊BC䛾୰ᛶᏊ䛾SER䜈䛾D䛿10%ᗘ䛻䛺䜛䛣䛸䜢♧䛧䛯䚹䛥䜙䛻䚸0.25μm䛾PD-SOI,

0.2μm䛾FD-SOI䛷䜒ྠᵝ䛷䛒䜛䛜䚸BT(Body Tie)䛻䜘䛳䛶2EF䛥䜜䜛䛣䛸䜢♧䛧䛯䚹

䜎䛯䚸⾲↷ᑕ䜒䛶ᐇ᪋䛧䚸⾲3.1.4-4䛻♧䛩䜘䛖䛻2.5MeV䛷䛿᭱኱5.5G䛾H䛜Ⓨ⏕䛩 䜛(0.18μm 4Mb SRAM)䛣䛸䜢♧䛧䛯䚹

Klein Osowski䜙䛿65nm CMOS SOI䠄body tie䛺䛧䠅䛾䝷䝑䝏ᅇ㊰䛾_α⥺䚸୰ᛶᏊ䛻䜘䜛SEU

⪏ᛶྥୖἲ䜢ᅗ3.1.4-13䛻♧䛩6㏻䜚䛾䝷䝑䝏䛻䛴䛔䛶᳨ウ䛧䛯䚹_α⥺䛾ධᑕI䜢ኚ䛘䜛䛣䛸䛻䜘䜚䚸

J㞟㟁Ⲵ1䜢ኚ໬䛥䚸0⏺㟁Ⲵ1䜢@䜑䚸䝷䝑䝏䛧䛶䛔䜛䝕䞊䝍≧K䛷䚸0⏺㟁Ⲵ1䛜ኚ໬䛩䜛 䛣䛸䜢♧䛧䛯䚹

㓄⥺L䛾M䛔䝷䝑䝏䛜⪏ᛶ㧗䚹㓄⥺L䛾N䛔䝷䝑䝏䛷䜒䝣䝽䞊䝗䝹䞊䝥䛾䜲䞁䝞䞊䝍䛜኱䛝䛔ሙ ྜ䚸䜲䞁䝞䞊䝍㒊䛻ᐜ1䜢௜ຍ䛧䛯䝷䝑䝏䛾⪏ᛶ䛿㧗䛔䛜䚸㠃✚䞉䝍䜲䝭䞁䜾䜸䞊䝞O䝑䝗䛜኱䛝䛟䛺 䜛䛣䛸䛜ศ䛛䛳䛯䠄⾲3.1.4-5䠅䚹

⾲3.1.4-4. SRAMࡢSEU᩿㠃✚ࡢ⾲⿬

↷ᑕࡢ┦㐪

ᅗ 3.1.4-12. ప 䜶 䝛䝹䜼䞊 ୰ ᛶ Ꮚ 䛻 ᑐ 䛩 䜛

InguimbertÚç3.1.4-14䛻䛩䜘䛖䛻P್Öø䛷䜒཯㌿䛜Ⓨ0䛩䜛SÝıQ⥺䜢䛩 ⣲Ꮚ䛜¼˜䛒䜛䛣䛸䛻┠䚹䛣䜜䛿᰾%R཯ᛂ䛻䜘䜛㧗䝹䜼䞊㔜䜲䜸䞁䛻ST䛩䜛䛸⪃䛘䛶

GEANT4 䛻䜘䜛䝅䝭䝳䝺䞊䝅䝵䞁䜢ᐇ᪋䛧䚸ᐇ್䛾Uྥ䛜ㄝ᫂䛷䛝䜛䛣䛸䜢♧䛧䛯䠄ᅗ 3.1.4-15䠅䚹

పLET㔜䜲䜸䞁䛾SEU㠃✚䜢⏝䛔䛯SEUVᛶWXἲ䜔䚸䝍䞁䜾䝇䝔䞁䛸㝧Ꮚ䛸䛾᰾཯ᛂ

䛷⏕ᡂ䛩䜛㔜䜲䜸䞁䛿䜶䝛䝹䜼䞊䛜ᑠ䛥䛔䛾䛷䚸ᛂYZ䛾䛩[㏆䛟䛷Ⓨ⏕䛧䛺䛔\䜚SEE䜈䛾D

䛿ᑠ䛥䛔䛣䛸䛺䛹䜢♧䛧䛯䚹

⾲3.1.4-5. ྛࣛࢵࢳࡢ㠃✚࣭ࢱ࢖࣑ࣥ

ࢢ࣮࢜ࣂ࣊ࢵࢻ

ᅗ3.1.4-13. ᳨ウ䛧䛯62㢮䛾䝷䝑䝏

䠄A)㏻ᖖ䝷䝑䝏

䠄B)୧䜲䞁䝞䞊䝍䛸䜒኱

䠄C)䝣䜱䞊䝗䝞䝑䜽䜲䞁䝞䞊䝍䛜኱ 䠄D)䝣䜷䝽䞊䝗䝞䝑䜽䜲䞁䝞䞊䝍䛜኱

䠄E)ᐜ㔞௜ຍ 䠄F)㧗Vth䜲䞁䝞䞊䝍

⪏ᛶ䠖D.F>B,F䠚A,C

ᅗ3.1.4-14. LET䜈䛾S]ᆺ≉ᛶQ⥺ ᅗ3.1.4-15. GEANT䛻䜘䜛䝅䝭䝳䝺䞊䝅䝵䞁⤖ᯝ

3.1.4.5 TID㛵㐃Ⓨ⾲

⾲3.1.4-6䛻TID㛵㐃䛾Ⓨ⾲™š䜢䜎䛸䜑䜛䚹

ၟ⏝䝟䝽䞊MOSFET䛷㔜䜲䜸䞁↷ᑕ©䛻䛝䛺I-V≉ᛶ䛾䝅䝖䛜&䛥䜜䛶䛚‹䚸䝸䞊䜽㟁û

䛾ຍ䛜᪂䛯䛺↷ᑕຠᯝ䛸䛧䛶ၥ㢟䛻䛺䛳䛶䛔䜛䚹Felix䜙䛿60Co^䞁⥺䚸25MeV㟁Ꮚ⥺䚸㔜䜲 䜸䞁↷ᑕ䛷ç3.1.4-16䛻䛩䜘䛖䛺ᵓ㐀䜢á䛴䝖䝺䞁䝏䝟䝽䞊MOSFET IRF3704ZCS䛸

FDD068AN03L䜢୺య䛻ᐇ_䛧䛯䚹

^䞁⥺↷ᑕ䛷䛿䚸ᅗ 3.1.4-17 䛻♧䛩䜘䛖䛻 I-V ≉ᛶ䛿`⾜aື䛧䚸Vst䠄䝃䝤䝇䝺䝅䝵䞊䝹䝗 㟁ᅽኚ໬䚹䝗䝺䜲䞁㟁ὶ1μA䛷Ỵᐃ䠅䛿1.4V䛰䛜䚸㔠䜲䜸䞁↷ᑕ䛷䛿13.6V䚹䜸䝣᫬䛾䝸䞊䜽㟁ὶ

䛿1.7A䛸ᙧ䛾ኚ໬䛸ኚ໬1䛜䜎䛳䛯䛟3䛺䜛䠄ᅗ3.1.4-18䠅䚹

䛣䜜䛿ᅗ3.1.4-19䛻♧䛩䜘䛖䛻䚸䜲䜸䞁䝖䝷䝑䜽䛻b䛳䛶䝀䞊䝖c໬d䛻Ⓨ⏕䛧䛯ṇe䛜c໬d䛻

䝖䝷䝑䝥䛥䜜䜛⤖ᯝ䚸䛧䛝䛔㟁ᅽ䛾ప䛔D⏕䝖䝷䞁䝆䝇䝍䛜Ⓨ⏕䛩䜛䜲䜽䝻䝗䞊䝈ຠᯝ䛻䜘䜛䛸᥎ᐃ䛧 䛯䚹

⾲3.1.4-6. TID㛵㐃䛾Ⓨ⾲ᴫἣ

㡯␒ ᴫせ

䠏䠊䠎䠊䠍䠌 䕔ၟ⏝䝟䝽䞊MOSFET䛷㔜䜲䜸䞁↷ᑕ᫬䛻኱䛝䛺I-V≉ᛶ䛾䝅䝣䝖䛜ほ 䛥䜜䛶䛚䜚䚸䝸䞊䜽㟁 ὶ䛾ቑຍ䛜᪂䛯䛺↷ᑕຠᯝ䛸䛧䛶ၥ㢟䛻䛺䛳䛶䛔䜛䚹

䕔60Co䜺䞁䝬⥺䚸25MeV㟁Ꮚ⥺䚸㔜䜲䜸䞁↷ᑕ䛷䝖䝺䞁䝏䝟䝽䞊MOSFET IRF3704ZCS䛸

FDD068AN03L䜢୺య䛻ᐇ㦂䚹

䕔䜺䞁䝬⥺↷ᑕ䛷䛿IV≉ᛶ䛿୪⾜⛣ື䛧䚸Vst䠄䝃䝤䝇䝺䝅䝵䝹䝗㟁ᅽኚ໬䚹䝗䝺䜲䞁㟁ὶ1μ䠝

䛷Ỵᐃ䠅䛿1.4V䛰䛜㔜䜲䜸䞁↷ᑕ䛷䛿13.6V䚹䜸䝣᫬䛾䝸䞊䜽㟁ὶ䛿1.7A䚹

䕔䜲䜸䞁䝖䝷䝑䜽䛻ἢ䛳䛶䝀䞊䝖㓟໬⭷䛻Ⓨ⏕䛧䛯ṇᏍ䛜㓟໬⭷䛻䝖䝷䝑䝥䛥䜜䜛⤖ᯝ䚸䛧䛝䛔㟁 ᅽ䛾ప䛔ᐤ⏕䝖䝷䞁䝆䝇䝍䛜Ⓨ⏕䛩䜛䝬䜲䜽䝻䝗䞊䝈ຠᯝ䛻䜘䜛䛸᥎ᐃ䚹

䠏䠊䠎䠊䠍䠍 䕔䝀䞊䝖䝷䝔䝷䝹PNP䝞䜲䝫䞊䝷䝖䝷䞁䝆䝇䝍䜢Ỉ⣲⎔ቃ䛷ᨺᑕ⥺↷ᑕ䜢䛧䚸Si/SiO2䛾⏺㠃‽఩

(Nit)䜢ホ౯䚹Ỉ⣲䛜↷ᑕ䛻䜘䜚㟁㞳䛥䜜䚸Si䛾䝎䞁䜾䝸䞁䜾䝪䞁䝗䛸⤖ྜ䛩䜛䚹 䕔Ỉ⣲⃰ᗘ䛜㧗䛟䛺䜛䛸Nit䜒ቑຍ䛩䜛䚹

䕔䝃䝤䝇䝺䝑䝅䝵䝹䝗≉ᛶ䛛䜙Nit䛸Not䠄㓟໬⭷䝖䝷䝑䝥䠅䜢ィ⟬䚹Not䜒Ỉ⣲⃰ᗘ䛸䛸䜒䛻ቑຍ䚹

䕔㓟໬⭷୰䛾Ḟ㝗䛸Ỉ⣲ศᏊ䛸䛾཯ᛂ䛻䜘䜛䝰䝕䝹䛷ᐇ㦂್䜢෌⌧䛷䛝䛯䚹

䠏䠊䠎䠊䠍䠎 䕔ᴟⷧ(3.0,7.5nm䠖EOT2.3,1.5nm)HfO2 䠄ẚㄏ㟁⋡15~26䠅MOSFET䛾10keV X⥺↷ᑕ䠜

ARACOR(31.5krad(SiO2)/min䠗10Mrad(SiO2))䛻䜘䜛㟁Ⲵᤕ⋓䜢᳨ウ䚹

䕔⭷ཌ3nm䛷䛿Vthኚ໬䛜ᴟ䜑䛶ᑠ䛥䛔䚹

䕔⭷ཌ7.5nm䛷䛿㟁Ⲵὀධ䛻ᑐ䛧䛶㟁ᅽ౫Ꮡᛶ䛜ᴟ䜑䛶኱䛝䛔䠄ṇ䝞䜲䜰䝇᫬䛷䛿㟁Ꮚᤕ⋓䚸

㈇䝞䜲䜰䝇᫬䛷䛿ṇᏍᤕ⋓䛜ᨭ㓄ⓗ䠅䚹

䠏䠊䠎䠊䠍䠏 䕔ၟ⏝130, 90nmCMOS䝥䝻䝉䝇䛻ᑐ䛧TID䜢ྥୖ䛥䛫䜛RHBD(2edge SRAM+RBB(Reverse Body Bias))䜢᳨ウ䚹

䕔Read᫬௨እ䛿䝋䞊䝇䛾㟁఩䜢ቑຍ䛧䚸䝋䞊䝇䝗䝺䜲䞁㛫㟁఩ᕪ䜢పῶ䛩䜛RBB䛻䜘䜚 TID⪏ᛶྥୖ䜢☜ㄆ䚹䛣䜜䛻䜘䜛SEU⪏ᛶຎ໬䛿䝖䝸䝥䝹䜴䜵䝹ᵓ㐀䛾᥇⏝䛻䜘䜚ゎỴ䚹

䠏䠊䠎䠊䠍䠐 䕔AlGaN/GaN HFET䛾䝗䝺䜲䞁㟁ὶ(Ids)䚸䝀䞊䝖㟁ὶ(Igs)䛻㛵䛩䜛ప䜶䝛䝹䜼䞊(0.45MeV)㟁Ꮚ

↷ᑕ䛾ຠᯝ䜢IV ᐃ䚸CV ᐃ䛻䜘䜚ホ౯䚹

䕔↷ᑕᚋ䚸ప (80~85K)䛷䛾Igs, Ids䛿ቑຍ䛧䚸↷ᑕ㔞䛾ቑຍ䛸ඹ䛻㣬࿴䝺䝧䝹䛻㐩䛧䛯䚹ᐊ 䜰

䝙䞊䝹䛻䜘䜚ᅇ᚟䚹

䕔ప 䛻䛚䛡䜛AlGaNᒙ䛷䛾ṇ㟁Ⲵ䛾⵳✚䠄2DEG, 2ḟඖ㟁Ꮚ䜺䝇⃰ᗘ䜢ቑຍ䛥䛫䚸Ids䛜ቑຍ

Chenځé䞊䝖䝷G䝷䝹PNP䝞䜲䝫䞊䝷䝖䝷䞁䝆䝇䝍䜢f⣲¿À䛷ᨺᑕ⥺↷ᑕ䜢䛧䚸Si/SiO2䛾

⏺Ä఩(Nit)䜢ホ౯䛧䛯䚹pMOSFET䛾Vg-Id≉ᛶ䛾↷ᑕà(25rad/sg30krad(SiO2))䛾ኚ໬䛾

f⣲ศᅽ౫ ᛶ䜢ᅗ3.1.4-20䛻♧䛩䚹f⣲ศᅽຍ䛻క䛔>ㄪ䛻ኚ໬䚹f⣲䛜↷ᑕ䛻䜘䜚㟁6䛥

䜜䚸Si䛾䝎䞁䜾䝸䞁䜾h䞁䝗䛸⤖ྜ䛩䜛䛣䛸䛻䜘䜚䚸f⣲iᗘ䛜㧗䛟䛺䜛䛸Nit䜒ຍ䛩䜛䛣䛸䛻ᑐᛂ䛩 䜛䚹

䝃䝤䝇䝺䝑䝅䝵䝹䝗≉ᛶ䛛䜙Nit䛸Not䠄c໬d䝖䝷䝑䝥䠅䜢ィ⟬䚹Not䜒f⣲iᗘ䛸䛸䜒䛻ຍ䛩䜛 䛣䛸䜢jฟ䛧䛯䚹c໬d୰䛾kl䛸f⣲ศᏊ䛸䛾m7䞉཯ᛂ䛻䜘䜛䝰䝕䝹䛷䚸Nit 䛻㛵䛩䜛ᐇ_್

䜢ᅗ3.1.4-21䛻♧䛩䜘䛖䛻n⌧䛷䛝䛯䚹

ᅗ3.1.4-19. 䜲䜽䝻䝗䞊䝈ຠᯝ䛻

䜘䜛䝸䞊䜽㟁ὶຍ䝯䜹䝙䝈䝮

䜲䜸䞁䝖䝷䝑䜽䛻b䛳䛶ṇe䛜䝖䝷䝑 䝥䛥䜜䚸䛧䛝䛔㟁ᅽ䛾ప䛔D⏕䝖

䝷䞁䝆䝇䝍䛜䛷䛝䜛

ᅗ3.1.4-18. P IRF3704ZCS䛾333MeV

㔠䜲䜸䞁↷ᑕ(13krad)

ᅗ3.1.4-17. P IRF3704ZCS䛾Co-60^䞁⥺ ↷ᑕ(103rad(SiO2)/sg20krad)

ᅗ 3.1.4-16. 䝖䝺䞁䝏ᆺ䝟䝽䞊䝕䝞䜲䝇䛾

ၟ⏝130,90nm CMOS䝥䝻䝉䝇䛻ᑐ䛧TID䜢ྥୖ䛥䜛RHBD䠄2edge SRAMo

RBB(Reverse Body Bias)䚸ç3.1.4-22䠅䜢᳨ウ䚹Read©Ö䛿ë䞊䝇䛾㟁఩䜢ຍ䛧䚸ë䞊䝇䝗

䝺䜲䞁9㟁఩H䜢ప䛩䜛RBB䛻䜘䜚TID⪏ᛶྥୖ䜢☜ㄆ䛧䛯䠄ᅗ3.1.4-23䠅䚹䛣䜜䛻䜘䜛SEU⪏ ᛶຎ໬䛿䚸䝖䝸䝥䝹䜴䜵䝹ᵓ㐀䛾p⏝䛻䜘䜚ゎỴ䛷䛝䜛䛣䛸䜢୺q䚹

Dixit䜙䛿䚸rM(3.0,7.5nm䠖EOT2.3,1.5nm)HfO2 䠄ẚㄏ㟁s15~26䠅MOSFET䛾10keV X

⥺↷ᑕtARACOR(31.5krad(SiO2)/ming10Mrad(SiO2))䛻䜘䜛㟁Ⲵuv1䜢ᐃ䛧䚸dN

7.5nm䛷䛿㟁Ⲵwධ䛻ᑐ䛧䛶㟁ᅽ౫ ᛶ䛜r䜑䛶኱䛝䛔䠄ṇ䝞䜲䜰䝇᫬䛷䛿㟁Ꮚuv䚸x䝞䜲䜰䝇

ᅗ3.1.4-20. f⣲ศᅽຍ䛻క䛖Vg-Id≉ᛶ

䛾ኚ໬

ᅗ3.1.4-21. c໬dෆ䛾f⣲䛾m7䚸⏺㠃䛷䛾

཯ᛂ䜢⪃:䛧䛯䝰䝕䝹䛻䜘䜛ᐇ್䛾䝣䜱䝑䝖

ᅗ3.1.4-22. 2edge SRAMoRBB (Reverse Body Bias)

©¡×euv䛜ᨭ¥ⓗ䚹ç3.1.4-24䠅䛾䛻ᑐ䛧䚸dN3nm䛷䛿_Vthኚ໬䛜r䜑䛶ú䛥䛔䠄ᨺᑕ ⥺⪏ᛶ䛻y䜜䛶䛔䜛䠅䛣䛸䜢j䛧䛯䠄ç3.1.4-25䠅䚹

McClory䜙䛿䚸AlGaN/GaN HFET䛾䝗䝺䜲䞁㟁û(Ids)䚸é䞊䝖㟁û(Igs)䛻㛵䛩䜛ప䜶䝛䝹䜼䞊

(0.45MeV)㟁Ꮚ↷ᑕ䛾ຠᯝ䜢IVᐃ䚸CVᐃ䛻䜘䜚ホ౯䛧䛯䚹

↷ᑕᚋ䚸పz(80~85K)䛷䛾Igs䠄ᅗ3.1.4-26䠅, Ids䠄ᅗ3.1.4-27䠅䛿ຍ䛧䚸Ids䛿Vds䛾ຍ䛸{

䛻!࿴䝺䝧䝹䛻㐩䛧䛯䛜|z䜰䝙䞊䝹䛻䜘䜚ᅇ}䛧䛯䚹

䛣䛾⌧㇟䛻䛴䛔䛶䛿䚸పz䛻䛚䛡䜛AlGaN L䛷䛾ṇ㟁Ⲵ䛾~✚䠄2DEG䚸2 ḟ㟁Ꮚ^䝇iᗘ 䜢ຍ䛥䚸Ids䛜ຍ䛩䜛䠅䚸䛚䜘䜃 AlGaN L䛾⏺㠃௜㏆䛷ᛶ€䛻䜘䛳䛶⏕ᡂ䛥䜜䜛䝖䝷䝑䝥

䠄䝀䞊䝖䝸䞊䜽㟁ὶ䜢ຍ䛥䜛TAT䠄䝖䝷䝑䝥䞉䜰䝅䝇䝖䞉䝖䞁䝛䝹䠅䛸䛺䜛䠅䛷ㄝ᫂䛷䛝䛯䚹

ᅗ3.1.4-26. ↷ᑕ䛻䜘䜛Igs䛾ኚ໬ ᅗ3.1.4-27. ↷ᑕ䛻䜘䜛Ids䛾ኚ໬

ᅗ3.1.4-24. dN7.5nm HfO2䝀䞊䝖c

໬d䛾ሙྜ䛾䝗䝺䜲䞁㟁ὶ

3.1.4.6 䜎䛸䜑㻌

(1) Ᏹᐂ䞉‚ƒᶵ䞉ᆅୖ䛾€å䛷ᚤ⣽໬䛻క䛖༙ᑟయ䝕䝞䜲䝇䛾䝷䞊䛜ð䞊䝗䛸{䛻„䛝

ü䛝m䚸k…໬䛧䛶䛔䜛䚹

(2) ᆅୖ䜢ྵ䜑䝻䝆䝑䜽䝕䝞䜲䝇䛾 SET ၥ㢟䛜୍Lº»໬䚹SET 䝟䝹䝇䛾ホ౯ၥ㢟䛜

†‡›䛜䚸SET䝟䝹䝇䛾ᚤ⣽໬䛻䜘䜛ຍ䚸=Ûኚ໬䛾㆟ㄽ䛜䛘䛴䛴䛒䜛䚹䜎䛯䚸

䝷䞊⪏ᛶ䛾䛔㒊఩䛾䝑Ù䞁䜾ᢏ⾡䛻㐍ˆ䛜j䜙䜜䜛䚹

(3) SEU ı䛜óô䝙䝈䝮䛻 䛧䛶‰䜙䛴˜⌧㇟䛾Ü=䛸ð䝕䝹䛾㆟ㄽ䛜㐍ˆ䚹᰾཯ ᛂ䛜Key䛸䛺䜛óô䝙䝈䝮䛜୍Šⓗ䛻V䛡ì䜜䜙䜜䛴䛴䛒䜛䚹

(4) ᪂䛧䛔䝕䝞䜲䝇䠄PLL,NAND/NOR 䝷䝑䝅í䠅䛻ᑐᛂ䛧䛶᪂䛧䛔䝷䞊ð䞊䝗䛾ሗ

4䛜䛘䛴䛴䛒‹䚸䜎䛯䛭䛾ᙳ㡪䜒k…䛥䜢䛧䛶䛔䜛䚹

(5) ë䝖䝷䞊s䜢ð䞁Gô䝹䝻ィ⟬䛻䜘䛳䛶@䜑䜛 RPP ð䝕䝹䛿䚸ᐇ–䛾䝕䝞䜲䝇䛾䝃 䜲䝈䜔0⏺㟁÷1䛸‹6䛧䛯ᩘ್䛜¸⏝䛥䜜䜛䛣䛸䛜¼˜䚸ð䝕䝹䛾-䛶X䛻᳨ウ䛜Œ

3.2 ᳨ウᩥ⊩

3.2.1 䝕䜱䞊䝥䡡䝃䝤䝭䜽䝻䞁CMOS䛻䛚䛡䜛SET䝟䝹䝇䜈䛾䜴䜵䝹ཬ䜃䝃䝤䝇䝖䝺䞊䝖㟁఩ኚㄪ

䛾ᙳ㡪

ᩥ⊩ Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS

IEEE Transaction on Nuclear Science, Vol. 54, No. 6, pp. 2407- 2412, Dec. 2007.

Ú DasGupta, S.; Witulski, A.F.; Bhuva, B.L.; Alles, M.L.; Reed, R.A.; Amusan, O.A.; Ahlbin, J.R.; Schrimpf, R.D.; Massengill, L.W.

ᑐ㇟䝕䝞䜲䝇 130nm/90nm CMOS/Bulk

ᐇ_タŽ

↷ᑕ⥺2ཬ䜃

䝹䞊䛾%

>Ⓨ⌧㇟䛿

±⟬⥺1ຠᯝ䛾%

>Ⓨ⌧㇟

ᐇ_䛿ㄽ䛾% 䝅䝭í䝺䞊䝅î䞁(TCAD)

(1) ™せ

䝕䜱䞊䝥䡡䝃䝤䝭䜽䝻䞁CMOS䛾•²୰䛷Ⓨ0䛩䜛SET (Single Event Transient) 䛾㟁û䜔㟁

ê = Û 䛾 ㄪ ᰝ 䛻 䛿 䚸 TCAD (Technology

Computer Aided Design) 䛜䜘˜⏝䛔䜙䜜䜛䚹SET

㟁û=Û䛻䛿䚸䛒䜛‘௳ø䛷୍ᐃ䛾㟁û್䜢䛳

䛯fᖹÈK 䠄Plateau䚸ç 3.2.1-1䠅䛜0䜎䜜䜛䛣䛸

䛜䚸ã$䛾◊✲䛛䜙䛛䛳䛶䛔䜛䚹

䛣䛾 Plateau YZ䛾㟁û್䜔Ⓨ0䛩䜛9䜢|

䞁䝖䝻䞊䝹䛩䜛óô䝙䝈䝮䛿䚸䜲䜸䞁ìᑕ䛻䜘䛳䛶ኚ

ື䛩䜛䝃䝤䝇䝖䝺䞊䝖୰䛾㟼㟁䝫G䞁䝅ß䝹’䛷䛒 䜛䛣䛸䛜䛛䛳䛯䚹Öø䚸“యⓗ䛺•²䠄䜲䞁䝞䞊䝍

䝏䜵䞊䞁䠅䜔䝥䝻䝉䝇䝟䝷ó䞊䝍 (90nm/130nm Bulk CMOS) 䜢⏝䛔䛯Mixed-mode TCAD 䝅 䝭í䝺䞊䝅î䞁䛛䜙䚸SET㟁û=Û䛾⤖ᯝ䜢䛧䚸óô䝙䝈䝮䛻䛴䛔䛶õö䛩䜛䚹

” ప/㧗䜶䝛䝹䜼䞊䛾ධᑕ•Ꮚ䛻䜘䜚Ⓨ⏕䛩䜛SET㟁

ὶ䞉㟁ᅽἼᙧ䛾ゎᯒ

– SET㟁ὶἼᙧ୰䛾PlateauYZᙧᡂ䛻ᙳ㡪䜢䛘䜛

ᅇ㊰䝣—䜽䝍䛾ㄪᰝ

˜ 㟁Ⲵ⏕ᡂ䛻䜘䜛㟼㟁䝫䝔䞁䝅䝱䝹nศ’䛾䚸䝗䝺䜲䞁 䝫䝔䞁䝅䝱䝹䜈䛾ᙳ㡪ㄪᰝ

(2) ™ㄽ

1䡚ᩘ_μm䜸䞊䝎䞊䛾䝥䝻䝉䝇䛻䛚䛔䛶䛿䚸ධᑕ•Ꮚ䛸䚸Ⓨ

⏕䛩䜛䝥䝷䝈䝁䝷䝮䛻䜘䜚䝫䝔䞁䝅䝱䝹ኚື䛾ᙳ㡪䛜ཬš

Cur

re

nt

Time

Current Plateau 䡮䡱䢙ධᑕ

Cur

re

nt

Time

Current Plateau 䡮䡱䢙ධᑕ

ᅗ3.2.1-1. SET㟁ὶ䛾PlateauYZ

BC䛿䚸䝗䝺䜲䞁䝃䝤䝇䝖䝺䞊䝖9䛾p-n䝆ß䞁䜽䝅î䞁䛻\䜙䜜䜛䠄ç3.2.1-2(a)䠅୍X䚸㏆ᖺ䛾 䝕䜱䞊䝥䞉䝃䝤䝭䜽䝻䞁䠄4䛸䛧䛶90nm䝥䝻䝉䝇䠅䛻䛚䛔䛶䛿䚸ìᑕ•Ꮚ䛜䝗䝺䜲䞁䛾m䛺䜙nTrయ 䜔䛭䜜䛻㏆ä䛩䜛Well|䞁䝍䜽䝖䜢䜒æྵ䛧䚸㟁఩䜔㟁⏺’䛻䛝䛺ᙳ㡪䜢ཬ›䛩䛣䛸䛻䛺䜛䠄ç

3.2.1-2(b)䠅䚹œ䞊䝇䛷䛿䚸•²୰䛻Ⓨ0䛩䜛SET㟁û=Û䜒3䛺䛳䛶˜䜛䚹

(3) TCAD䝅䝭í䝺䞊䝅î䞁

90nm䝥䝻䝉䝇䛻䛚䛔䛶タィ䛧䛯䜲䞁䝞䞊䝍䝏䜵䞊䞁䠄ç3.2.1-3䠅䛻ᑐ䛧䛶䚸3D Mix-mode䛷䛾 TCAD䝅䝭í䝺䞊䝅î䞁䜢ᐇ᪋䛧䚸ìᑕ•Ꮚ䛾LET䛾㐪䛔䠄పLET䠖1MeV/(mg/cm2_{)䚸୰䞉㧗LET䠖}

>10MeV/(mg/cm2_{)䠅䛻䜘䜛SET㟁ὶ䞉㟁ᅽἼᙧ䜢ẚ㍑䛧䛯䚹ᅇ㊰䛿䚸5ž䛾䜲䞁䝞䞊䝍䝏䜵䞊䞁䛷䚸}

3ž┠䛾䜲䞁䝞䞊䝍䛾N䝏䝱䝛䝹Tr䜈䚸䜲䜸䞁ධᑕ䛧䛯䚹

TCAD䝅䝭䝳䝺䞊䝅䝵䞁⤖ᯝ䛿䚸ᅗ3.2.1-4(a)䡚(c)䛾㏻䜚䛸䛺䛳䛯䚹పLET䛷䛿䚸SET㟁ὶἼᙧ

䛿Double Exponential䛷㏆Ÿ䛷䛝䜛Ἴᙧ䛸䛺䛳䛯(a)䚹୰䞉㧗LET䛷䛿䚸SET㟁ὶἼᙧ䛿䜲䜸䞁

ධᑕᚋ2䡚3ps䛾䝢䞊䜽㟁ὶⓎ⏕ᚋ䚸䛒䛝䜙䛛䛻PlateauYZ䛜ฟ⌧䛧䚸Double Exponential䛷 䛿㏆Ÿ䛷䛝䛺䛔Ἴᙧ䛸䛺䛳䛯(b)䚹䜎䛯୰䞉㧗LET䛷䛾SET㟁ᅽἼᙧ䛿䚸㟁ὶἼᙧ䛾PlateauYZ

䛾9䛻䜘䛳䛶䚸SET㟁ᅽ䝟䝹䝇䛜Ỵ䜎䛳䛶䛟䜛(c)䚹

䛥䜙䛻䚸ᅇ㊰䝣—䜽䝍䜢ኚ䛘䛶䠄⾲3.2.1-1䠅䚸TCAD䝅䝭䝳䝺䞊䝅䝵䞁䜢ᐇ᪋䛧䛯䠄ᅗ3.2.1-5䠅䚹䛣䜜 䜙䛾ᅇ㊰䛷䛿䚸䜲䜸䞁ධᑕ䛧䛯䝜䞊䝗䛾xⲴᐜ1䛿ẚ㍑ⓗᑠ䛥䛔 (5fF䡚20fF) 䛯䜑䚸xⲴ䛛䜙䛾㟁

ὶ䛿䜋䛸䜣䛹⪃:䛻ධ䜜䜛Œせ䛿䛺䛟䚸SET㟁ὶ䛿䛭䛾䜋䛸䜣䛹䛜↷ᑕ䛥䜜䛯N䝏䝱䝛䝹Tr䛸ᑐ䜢

ᅗ3.2.1-4. TCAD䝅䝭䝳䝺䞊䝅䝵䞁⤖ᯝ

(a)SET㟁ὶ䞉㟁ᅽἼᙧ䠖పLET(1MeV/(mg/cm2_))䚸

(b)SET㟁ὶἼᙧ䠖୰䞉㧗LET(10,40 (1MeV/(mg/cm2_)))䚸

(c) SET㟁ᅽἼᙧ䠖୰䞉㧗LET(10,40 (1MeV/(mg/cm2₎₎₎

Hit Inverter Loading Inverter

Hit Inverter Loading Inverter

䛺䛩P䝏ß䝹Tr䛛䜙䛾•}㟁û (IP-ON) 䛸➼䛧䛔䛸õ䛘䜙䜜䜛䚹Ó䛳䛶䚸⾲3.2.1-1୰䛷᭱䜒”Hit

Inverter”䛾PMOS䛾W䝃䜲䝈䛜䛝䛔䞊䝇

D 䛷䛿䚸 ©9䛷䛝䛺•}㟁û䜢û䛩⬟a䜢

á䛴䛯䜑䚸SET 㟁û=Û䛾 Plateau YZ䛜 

䛔䚹䜎䛯䚸SET 㟁ê䜒䛾㟁ê䛻•}䛩䜛-A

ୖ䛜‹䜒¡˜䚸SET㟁ê䝟䝹䝇䜒¢䛔䚹

Plateau YZⓎ0䛾óô䝙䝈䝮䜢䛩䜛䛯

䜑䚸䛥䜙䛻TCAD䝅䝭í䝺䞊䝅î䞁䜢û䛧䛯䚹ìᑕ

Tr䛾3Dð䝕䝹ç䜢䚸ç3.2.1-6䛻䛩䚹䛥䜙䛻䚸

ᖹ£ÈK䛻 䛚 䛡 䜛 䝫G䞁 䝅ß䝹’䜢 䚸ç

3.2.1-7䛻䛩䚹Well|䞁䝍䜽䝖Well 9䛿䚸o

›୍ᐃ䛾䝫G䞁䝅ß䝹䛻䛯䜜䛶䛔䜛䚹

䛣䜜䜙䛸ẚ㍑䛧䛶䚸Plateau YZ䛜Ⓨ0䛧䛶䛔

䛯䚸LET=10 (MeV/(mg/cm2_{))䛷䛾⤖ᯝ䜢䚸ç}

3.2.1-8䛻䛩䚹Well|䞁䝍䜽䝖Well9䛾䝫G

䞁䝅ß䝹H䛜䛧䛶䛔䜛୍X䚸䝗䝺䜲䞁Well

9䛾䝫G䞁䝅ß䝹H䛜o›䛺˜䛺䛳䛶䛔䜛䚹䛣䛾

䜘䛖䛺㧗iᗘWell|䞁䝍䜽䝖䛷䛾䛝䛺䝫G䞁䝅ß䝹H䛿䚸䝟䝽䞊䝎䜲䜸䞊䝗䛷䛾䝤䝺䞊䜽䝎䜴䞁¤

䛜Ⓨ0䛩䜛¿À䛸㢮Ÿ䛧䛶䛔䜛䚹

ᅗ3.2.1-7. ᖹ£≧K䛷䛾䝫䝔䞁䝅䝱䝹ศ’

⾲3.2.1-1. ᅇ㊰୰䛾Tr䝃䜲䝈

ᅗ3.2.1-5. ⾲3.2.1-1䛾ᅇ㊰䛷䛾TCAD⤖ᯝ

SETPûäPê=Û䛻PlateauYZ䛜⌧䛩䜛óô䝙䝈䝮䜢䚸ç3.2.1-9䛻ᇶ䛵䛔䛶ýÂ䛩䜛䛸

Öø䛾䜘䛖䛻䛺䜛䚹

” 䜲䜸䞁ìᑕ䛻䜘‹Well|䞁䝍䜽䝖Well9䛾䝫G䞁䝅ß䝹H䛜(VW)䚹 – ë䞊䝇䝃䝤䝇䝖䝺䞊䝖9䛾䝫G䞁䝅ß䝹H䛜¤(VdVW)䚹

˜ 䝗䝺䜲䞁䛾䝫G䞁䝅ß䝹䛜¤((VdVW)-Plateau㟁ê)䚹

¥ ୍ᐃ9䝗䝺䜲䞁㟁ê䛜(VdVW)䛷䚸䛭䛾䝗䝺䜲䞁䜢{䛧䛶䛔䜛ᑐ䛸䛺䜛 P䝏ß䝹 Tr

䛜é䞊䝖=0V䛷¦ᐃ䛥䜜䛯¬Á䚸P䝏ß䝹Tr䛾é䞊䝖ë䞊䝇㟁êཬ䜃䝗䝺䜲䞁ë䞊䝇 㟁ê䛜¦ᐃ䛥䜜䜛䛯䜑䚸୍ᐃ䛾 P 䝏ß䝹 Tr 㟁û䛜䛭䛾9û䜜ü䛡䜛䠄SET 㟁û䛾

PlateauYZ䛾Ⓨ0䠅䚹

(4) Plateau㟁ê䝺䝧䝹䛻D䛩䜛䜒䛾

䝃䝤䝇䝖䝺䞊䝖䛾䝗䞊Ù䞁䜾iᗘ䜢§â‹䛛ኚ໬䛥䚸N䝏ß䝹Tr䛾䝗䝺䜲䞁䛻䜲䜸䞁ìᑕ䛧䛯䛸 䛝䛾䚸Well|䞁䝍䜽䝖ë䞊䝇䝗䝺䜲䞁䛾䝫G䞁䝅ß䝹ኚື䜢䝅䝭í䝺䞊䝅î䞁䛧䛯⤖ᯝ䚸Öø䛾䜘䛖

䛻Plateau㟁ê䝺䝧䝹䛜ኚ໬䛩䜛䛣䛸䜢☜ㄆ䛧䛯䠄⾲3.2.1-2䠅䚹

” 䝃䝤䝇䝖䝺䞊䝖㧗iᗘ䛾¬Á

Well|䞁䝍䜽䝖Well9䛾䝫G䞁䝅ß䝹H䛿ú䛥˜䛺䜛䚹 ë䞊䝇ཬ䜃䝗䝺䜲䞁䛷䛾䝫G䞁䝅ß䝹䛜䛻¤䚹

୰/㧗LET(= 10MeV/(mg/cm2₎

䡮䡱䢙ධᑕ䛻䜘䜚 Ⓨ⏕䛩䜛

䡽䡨䡬䡸䢚㔞䠖

10-17_cm3_{䡱䡬䡼䢚䡬} (>Substrate)

Under the drain

Under the well contact

Well䡶䢙䡼䡴䢀-Well䛾 䢊䢛䡿䢙䡸䡨䢕ᕪ䛜ቑ 䠄”push-out”)

ç3.2.1-8. LET=10 (MeV/(mg/cm2_))䛷䛾

䝫G䞁䝅ß䝹’

PlateauPêW 䝇¨䛻䚹

– 䝃䝤䝇䝖䝺䞊䝖పiᗘ䛾ሙྜ

Well䝁䞁䝍䜽䝖Well䛾䝫䝔䞁䝅䝱䝹H䛿኱䛝䛟䛺䜛䚹 䝋䞊䝇ཬ䜃䝗䝺䜲䞁䛷䛾䝫䝔䞁䝅䝱䝹¤䛿¤䛺䛟䛺䜛䚹

Plateau㟁ᅽ䛿䜲䝘䝇¨䛻䛒䜎䜚䜙䛺䛔䚹

(5) ⤖ㄽ

90nm/130nm Bulk CMOS䛻䛚䛡䜛䚸䜲䞁䝞䞊䝍䝏䜵䞊䞁ᅇ㊰୰䜈䛾䜲䜸䞁ධᑕ䛻䜘䜛SETⓎ

⏕䛻䛴䛔䛶䚸௨ୗ䛻䜎䛸䜑䜛䚹

9 ప LET (䡚1 MeV/(mg/cm2_{)) 䛷 䛿 䚸SET 㟁ὶ Ἴ ᙧ䛿©䛺 䛜 䜙 䛾 Double}

Exponential䜢䛸䜛䚹

9 ୰/㧗LET (> 10 MeV/(mg/cm2_{)) 䛷䛿䚸SET㟁ὶἼᙧ䛿୍ᐃ䛾㟁ὶ䛜ὶ䜜⥆䛡}

䜛PlateauYZ䛜 ᅾ䛩䜛䚹

9 ୰/㧗 LET 䛷䛿䚸SET 㟁ᅽἼᙧ䛿䚸㟁ὶ䛸ྠ䛨䛟 Plateau YZ䜢ᣢA䚸䛭䛾

Plateau㟁ᅽ䛿䝃䝤䝇䝖䝺䞊䝖䜔Well䝁䞁䝍䜽䝖䛾iᗘ䛻ᙳ㡪䛥䜜䜛䚹

9 Plateau㟁ὶ䛿䚸Plateau㟁ᅽ䛷Drain䜢¦ᐃ䛥䜜䛯ᑐ䛸䛺䜛PMOS䛾䝗䝷䜲䝤⬟

ຊ䛻䜘䛳䛶䚸Ỵ䜑䜙䜜䜛䚹

9 ୰/㧗 LET 䛾䜲䜸䞁ධᑕ䛷PlateauYZ䛜⌧䜜䜛䝯䜹䝙䝈䝮䛿䚸䜲䜸䞁↷ᑕ䛥䜜䛯

NMOS䛾Drain䡚Source䡚Well䝁䞁䝍䜽䝖䛾9䛾䝫䝔䞁䝅䝱䝹ኚື䛻䜘䜚ㄝ᫂䛷䛝

䜛䚹≉䛻䚸䝃䝤䝇䝖䝺䞊䝖䛾iᗘ䜔㧗iᗘWell䝁䞁䝍䜽䝖䛜῝䛟䛺䜛䛣䛸䛻䜘䛳䛶䚸䜲 䜸䞁ධᑕ䛷 Well 䝁䞁䝍䜽䝖䛾䝫䝔䞁䝅䝱䝹䛾“push-outª䛜„䛝S䛣䛥䜜䜔䛩䛟䛺䜚䚸

Plateau㟁ᅽ䛻ᙳ㡪䛩䜛䛣䛸䛜ศ䛛䛳䛯䚹

(6) ⪃ᐹ

9 ᮏㄽᩥ䛻䛿䚸xⲴ䛸PlateauYZ䛸䛾㛵ಀ䛻㛵䛩䜛⪃ᐹ䛿䛺䛛䛳䛯䛜䚸xⲴ䛜኱䛝 䛔ሙྜ䛿䚸䜲䜸䞁ධᑕ䛥䜜䛯䝖䝷䞁䝆䝇䝍䚸4䛘‰NMOS䝖䝷䞁䝆䝇䝍䛾Drain㟁ᅽ

䛜䛒䜎䜚ୗ䛜䜙䛪䚸SET 㟁ὶ䛾 Plateau YZ䜒ฟ⌧䛧䛺䛟䛺䜛䚹SET 㟁ὶ䛾

PlateauYZ䛿䚸SET㟁ᅽ䝟䝹䝇䛻ᐦ᥋䛻㛵ಀ䛧䛶䛔䜛䛾䛷䚸ᅇ㊰୰䛷䛾SET

ゎᯒ䛻䛸䛳䛶䛿㔜せ䛺䝟䝷䝯䞊䝍䛷䛒䜛䛸䛔䛘䜛䚹

⾲3.2.1-2. 䝃䝤䝇䝖䝺䞊䝖䛾䝗䞊䝢䞁䜾iᗘ䛸Plateau㟁ᅽ䛸䛾㛵ಀ

Plateau

㟁ᅽ

䢋䡮

䢁

䡹

ഃ

䛻ቑ

⃰

ᗘ

3.2.2 130-nm࠾ࡼࡧ90-nm CMOS࡟࠾ࡅࡿࢹ࢕ࢪࢱࣝSETࣃࣝࢫᖜࡢ≉ᚩ

ᩥ⊩ Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

IEEE Transaction on Nuclear Science, Vol. 54, No. 6, pp. 2506- 2511, Dec. 2007.

Ú Balaji Narasimham, Bharat L. Bhuva, Ronald D. Schrimpf, Lloyd W.

Massengill, Matthew J. Gadlage, Oluwole A. Amusan, William Timothy Holman, Arthur F. Witulski, William H. Robinson, Jeffrey D. Black, Joseph M. Benedetto, and Paul H. Eaton

ᑐ㇟䝕䝞䜲䝇 130-nm࠾ࡼࡧ90-nm CMOS

ᐇ_タŽ Lawrence Berkley National Laboratory࠾ࡼࡧTexas A&M኱Ꮫࡢ

ࢧ࢖ࢡࣟࢺࣟࣥ ↷ᑕ⥺2ཬ䜃

䝹䞊䛾%

㔜࢖࢜ࣥ ( Ne, Ar, Kr, Xe ) LETࡣ1.8-100 MeV-cm2_/mg >Ⓨ⌧㇟䛿

±⟬⥺1ຠᯝ䛾%

༢Ⓨ⌧㇟

ᐇ_䛿ㄽ䛾% ᐇ㦂

(1) せ«

㔜䜲䜸䞁䛻䜘䛳䛶Ⓨ0䛩䜛SET䛾䝟䝹䝇䛾’䜢䚸130-nm䛸90-nm CMOS䜢⏝䛔䛶ᐇ_ⓗ 䛻@䜑䛯䚹䝟䝹䝇䛾ᐃ䛿䚸䝟䝹䝇ືᐃ•²䜢䝏䝑䝥䛻þ䛩䜛䛣䛸䛷^䛳䛯䚹SET 䛾 ı䛜᭱䜒䛝˜䛺䜛䝟䝹䝇䛿䚸130-nm 䝥䝻䝉䝇䛷䛿 400ps-700ps 䛷䛒‹䚸90-nm 䛷䛿

500ps-900ps䛷䛒䛳䛯䚹3ÍTCAD䛻䜘䜛䝅䝭í䝺䞊䝅î䞁䛷䚸䝟䝹䝇䛾ኚ໬䛿䜲䜸䞁䛜€䛩

䜛¬䛾㐪䛔䛷0䛨䜛䛣䛸䜢☜ㄆ䛧䛯䚹ᢏ⾡䛾䝇䞊䝸䞁䜾䛻䜘䛳䛶䝟䝹䝇䛿¬䛔X䛻a䛳䛶^˜

䛾䛷䚸Çà䛾ㄽ•²䛿䝇䞊䝸䞁䜾䛷­åSET䛾ᙳ㡪䜢V䛡䜛䜘䛖䛻䛺䜛䚹

(2) 䜲䞁䝖䝻䝎䜽䝅î䞁

1990ᖺ®Ö×䚸䝅䞁䜾䝹䜲䝧䞁䝖䝖䝷䞁䝆䜵䞁䝖(SET)䛜LSI䛻䛝䛺ᙳ㡪䜢䛘䜛䛣䛸䛜ㄆ䛥䜜

䛶䛝䛯[1]-[3]䚹䝇䞊䝸䞁䜾䛧䛶^˜䛸䚸¯°䛿䜲䜸䞁€䛷0䛨䛯㟁÷䛻䜘䛳䛶8䛥䜜䜛[4]䚹óð䝸䛷

䛿䚸䝷䞊±ṇ䜔⪏ᛶ䛾䛒䜛䝷䝑䝏䛷タィ 䛩䜛䛣䛸䛷SETຠᯝ䜢䛩䜛䛣䛸䜒ñ䜛

䛜䚸䛛䛺‹ᛶ⬟䜢²³䛻䛩䜛䛣䛸䛻䛺䜛[5]䚹

ㄽ•²䛷䛿䚸SET 䛜ᛶ䜢Ỵᐃ䛩

䜛᭱䜒㔜せ䛺せT䛻䛺䜛䛣䛸䛜䛥䜜䛶䛔䜛

[6][7]䚹´㛗ᛶ[8]䜔^䞊䝗é䞊䝖䚸䛭䜜䛻䜾

䝸䝑䝏䛾䜱䝹䝍䝸䞁䜾[9]䜢¸䛖䛾䛿䚸SET

䛻ຠ䛷䛒䜛䛜䚸•²䛾ᛶ⬟䜢ø䛥

䜛䛣䛸䛻䛺䜛䚹䛣䛾䜘䛖䛻㔜せᛶ䛿ㄆ䛥

䜜䛶䛔䜛䛾›䛜䚸Ᏹᐂ㛵Ï䛾9䛷䛿䚸䜎

›SET䝟䝹䝇䛻䛴䛔䛶䛾|䞁䝉䞁䝃䝇䛜

/䜙䜜䛶䛔䛺䛔䚹䛣䜜䜎䛷䚸130-nm 䛻䛴䛔

ç 3.2.2-1. ë䞊䝇䝗䝺䜲䞁䛻ᑐ䛧䛶€఩⨨䜢ኚ

䛶䛿䝟䝹䝇䛜ᩘ100ps[10]䛛䜙ᩘns[12]䛾್䛜ሗ䛥䜜䛶䛔䜛䚹䝟䝹䝇䛿䚸¸¹䜜䜛ᢏ⾡›䛡

䛷䛺˜䚸•²ÛK[12]䚸ື/䝟䝷ó䞊䝍[13]䚸䛭䜜䛻ᐃἲ䛾ᙳ㡪䜒V䛡䜛䚹䛥䜙䛻䚸䜲䜸䞁䛜€䛩

䜛఩⨨䛜䝷䞁䝎䝮䛷䛒䜛䛯䜑䚸J°䛥䜜䜛㟁÷1䛿ç3.2.2-1䛾ᵝ䛻¬BC䛻ኚ໬䛩䜛[13]䚹䝟䝹䝇

䛾’䛻䛴䛔䛶䛿䚸䛣䜜䜎䛷µ䛻ṇ☜䛻¶·䛧䛯ሗ䛿䛺䛛䛳䛯䚹

ᮏㄽᩥ䛾ᐇ_䛷䛿䚸䝟䝹䝇ືᐃ•²䜢䜸䞁䝏䝑䝥䛷¸Ê䛧䛯130-nm䛸90-nm CMOS䜢

MOSIS䛷.㐀䛧䚸¬BC䛺LET䛾㔜䜲䜸䞁¹_䜢^䛔䚸SET䛾Ô⣽䛺ᛶº䜔䝟䝹䝇䛾’䜢

ᐃ䛧䛯䚹

(3) 䝟䝹䝇ືᐃ•²

䝟䝹䝇䛾ᐃἲ䛿䚸䝷䝑䝏䛻¸¹䜜䜛䜲䞁䝞䞊䝍䛾»¼©9䜢>఩䛻䛧䛶ᐃ䛩䜛䚹SET䝟䝹

䝇䛿䚸ᐃ•²䛾䝷䝑䝏½䜢¾¹䛳䛶^䛝䚸䛒䜛©9¿ã䛧䛯䛸䛣À䛷䝩䞊䝹䝗䛥䜜䜛䚹SET䛾ᙳ㡪䜢

V䛡䛯žᩘ䜢ᩘ䛘䜜‰䝟䝹䝇䜢ᐃ䛷䛝䜛䚹·H䛿 o/ 䜲䞁䝞䞊䝍»¼䛾༙䛻J䜎䜛䚹

ç 3.2.2-2 䛻•²䜢䛩䚹䝍䞊é䝑䝖㒊䛜䜲䜸䞁€䛷 SET 䝟䝹䝇䜢Ⓨ0䛩䜛㒊䛷䛒䜛䚹䝍䞊

é䝑䝖•²䛿䚸タィ䛾Œせ䛻ᛂ䛨䛶ª䛾䜘䛖䛺•²䛻䛧䛶䜒䜘䛔䛜䚸ᐇ_䛷䛿᭱úùືື/䜲䞁

䝞䞊䝍½䛸䛧䛯䚹Á䛿ၟ⏝䛾LSI䛻o›➼䛧˜䛺䜛䛛䜙䛷䛒䜛䚹䜲䞁䝞䞊䝍žᩘ䛿130-nm䛷110

ž䚸90-nm䛷1,000ž䛸䛧䛯䚹䛣䛾䝍䞊é䝑䝖•²䛿low - high - lowÛÈ䛾SET䝟䝹䝇䜢Ⓨ0䛩

䜛䚹ᐃ•²䛿䝷䝑䝏䜢K½äü䛧䛯䜒䛾䛷䚸SET䝟䝹䝇䛜”1ž䜢âã䛧䛶䛛䜙䚸䛒䜛»¼©9¿

ã䛩䜛䛸'hold'¯°䜢Ⓨ0䛥SET䝟䝹䝇䜢uÂ䛩䜛䚹”2žÖ×䛾ª䛾䝷䝑䝏䛻䜲䜸䞁䛜€䛧䛶

䜒'hold'¯°䛿Ⓨ0䛧䛺䛔䛜䚸”1ž䛻€䛧䛯¬Á䛿SET䛸䛧䛶ᐃ䛥䜜䜛䚹䝟䝹䝇䛜uÂ䛥䜜䛶

䝷䝑䝏䛾䝕䞊䝍䛜ÃmÃ䜙䜜䛯䛺䜙‰䚸䝸䝉䝑䝖䝟䝹䝇䛷Í䛾SET䜢&䛩䜛ÈK䛻Ä䛩䚹

SET䝟䝹䝇䛾䝍䞊é䝑䝖•²䛸ᐃ•²䛷䛾¾Å≉ᛶ䛿䚸Cadence Spectre[15]䛷䝅䝭í䝺䞊䝅î䞁 䛧䛯䚹䝟䝹䝇䛜150-nm䛷180psÖୖ䚸90-nm䛷150psÖୖ䛾䜒䛾䛿ƪÇ䛺˜¾Å䛩䜛䛾

䜢☜䛛䜑䛯䚹䜎䛯䚸䜲䞁䝞䞊䝍䛾»¼©9䜢ᐃ䛩䜛䛯䜑䝸䞁䜾Ⓨj䜢䝏䝑䝥䛻¸Ê䛧 1.2V 䛷ື

/䛥䚸130-nm䛷䛿120ps䚸90-nm䛷䛿100ps䛷䛒䜛䛣䛸䜢ᐃ䛧䛯䚹

⾲3.2.2-1. 130-nmࡢヨ㦂᮲௳

ᅗ3.2.2-3. 130-nm࡛ࡢ(a)SETࣃࣝࢫᖜࡢ

ศᕸ (b)᩿㠃✚ࡢྜィ࡜Ⓨ⏕ᩘ

ᅗ3.2.2-4. ࣃࣝࢫᖜẖࡢ᩿㠃✚ࡢศᕸ

ᅗ3.2.2-5. ྛࣃࣝࢫᖜ࡟ᑐࡍࡿSET᩿㠃✚

ᅗ3.2.2-6. ࣃࣝࢫᖜ࡜LET࡟ᑐࡍࡿṇつ

໬ࡉࢀࡓSET᩿㠃✚ࡢ➼㧗⥺

(4) 130-nm䛷䛾㔜䜲䜸䞁¹_⤖ᯝ㻌

¹ _ 䛿 Lawrence Berkeley National

Laboratory䛾䝃䜲䜽䝻䝖䝻䞁䛷䚸↷ᑕIᗘ䜢ኚ䛘䜛䛣

䛸䛷ᐇຠⓗ䛺LET䜢3.5-100Mev-cm2_/mg䛾BC䛻

ኚ ໬ 䛥䛶^䛳 䛯 䚹 ⾲3.2.2-1}↷ 䚹•Ꮚ ᐦ ᗘ 䛿 1×108_ions/cm2_{䛷䛒䜛䚹ç3.2.2-3(a)䛷䛿䚸SET䝟}

䝹䝇䛾’䜢ᖹÈ್䚸ÉÊH䚸್᭱䚸᭱ú

್䛷䛧䛯䚹ç3.2.2-3 (b)䛻䛿䚸SET䛾ᩘ䛸䜲䞁

䝞䞊䝍1Ќ䛯‹䛾SETı䜢䛧䛯䚹LET䛾䝇 䝺䝑䝅î䞊䝹䝗䛿䚸«7Mev-cm2_{/mg䛷䛒䛳䛯䚹}

ç3.2.2-4䛿䚸䝟䝹䝇Ë䛻j䛯LET䛸SET

ı䛾’䛷䚸ç 3.2.2-5 䛿̶䛷䛧䛯䜒

䛾䛷䛒䜛䚹䝟䝹䝇䛿୍ᐃ䛷䛺˜䚸¬䛔BC䛻¹

䛯䛳䛶䛔䜛䚹

ç3.2.2-6䛿䚸ṇ³໬䛧䛯SETı䛾➼㧗

⥺䜢䝥䝻䝑䝖䛧䛯䜒䛾䛷䛒䜛䚹

SET䝟䝹䝇䛿䚸400ps䛛䜙700ps䛾BC䛻

ᅗ3.2.2-7. 90-nm࡛ࡢ (a) SETࣃࣝࢫᖜࡢศ ᕸ (b)᩿㠃✚ࡢྜィ࡜Ⓨ⏕ᩘ

ᅗ3.2.2-10. 130-nmࡢTCADࣔࢹࣝ

ᅗ3.2.2-9. ṇつ໬ࡉࢀࡓ᩿㠃✚ࡢ➼㧗⥺ᅗ

53.2.2-2. 90-nm ¹_‘û

ᅗ3.2.2-8. ࣃࣝࢫᖜẖࡢ᩿㠃✚ࡢศᕸ

(5) 90-nm䛷䛾㔜䜲䜸䞁¹_⤖ᯝ

¹_䛿䚸Texas A&MᏛ䛾䝃䜲䜽䝻䝖䝻䞁䛷䜲

䜸䞁䜢ÍK↷ᑕ䛧䛯䚹LET䛿Çj(degrader)Î ì䛒‹/䛺䛧䛾22䛷䚸•Ꮚᐦᗘ䛿1×108 _ions/cm2_䛸

䛧䛯䚹⾲3.2.2-2}↷䚹ç3.2.2-7䛻䝟䝹䝇䛾’

䜢䛩䚹

LET 䛾䝇䝺䝑䝅î䞊䝹䝗䛿 2Mev-cm2_{/mg Öø}

䛷䛒䛳䛯䚹䝟䝹䝇䛿 LET 䛻ϋ 䛧䛺䛔䛜䚸

ı䛸Ⓨ0ᩘ䛿LET䛻ᙉ˜ 䛩䜛䚹

ç3.2.2-8䛿䚸䝟䝹䝇Ë䛾SETı䛾Ð䝇

䝖䜾䝷䝮䛷䚸ç3.2.2-9䛿ṇ³໬䛧䛯ı䛾➼㧗 ⥺ç䛷䛒䜛䚹䝟䝹䝇䛜500ps䛛䜙900ps䛾䜒䛾 䛜ᨭ¥ⓗ䛻䛺䛳䛶䛔䜛䛾䛜䜛䚹

(6) TCAD࡟䜘䜛䝟䝹䝇䛾䝅䝭í䝺䞊䝅î䞁

䜲䞁䝞䞊䝍10ž䜢K½äü䛧䛯䜒䛾䛷䚸䝭䝑䜽䝇䝗

ð䞊䝗䝅䝭í䝺䞊䝅î䞁䜢䛧䛯䚹⣲Ꮚ䛾䝃䜲䝈䛿䚸䝕

䝞䜲䝇䝟䝷ó䞊䝍䛾ᇶ䛸䛺䛳䛯䜒䛾䛻Á¹䛯䚹䜲䞁

䝞䞊䝍2ž┠䛾䜸ÈK䛾pMOS䜢䚸ç3.2.2-10䛾

䜘䛖䛻TCAD䛷ð䝕䝹໬䛧䛯䚹

ᅗ3.2.2-12. ࣃࣝࢫᖜࡢLET౫Ꮡᛶࡢẚ㍑

ᅗ3.2.2-11. ⾪✺఩⨨࡜ࣃࣝࢫᖜࡢ㛵ಀ

䛯䛜䚸䛣䜜䛷1μmŒ䛯‹0.4pC䛾㟁÷䛜Ⓨ0䛩䜛䚹䜲䜸䞁䛾€఩⨨䛿䚸䜴䜵䝹|䞁䝍䜽䝖఩⨨䛻ᑐ 䛧䛶Ñᑐⓗ䛻ኚ໬䛥䛯䚹

ç3.2.2-11䛿䚸8ž┠䛾䜲䞁䝞䞊䝍䛷䛾䝟䝹䝇䛷䛒䜛䚹䜴䜵䝹|䞁䝍䜽䝖䛿䚸Ⓨ0䛧䛯㟁÷䜢ÒJ

䛩䜛/⏝䛜䛒䜛䛾䛷䚸€఩⨨䛜㏆䛔䛸䝟䝹䝇䛿 ˜䛺䜛[16]䚹

䝅䝭í䝺䞊䝅î䞁⤖ᯝ䛿䚸SET 䝟䝹䝇䛜€఩

⨨䛻 䛩䜛䛣䛸䜢䛩䜒䛾䛷䚸€఩⨨䛜䝷䞁䝎

䝮䛻ኚ໬䛩䜛䛸䝟䝹䝇䛜¡ィⓗ䛺’䛻䛺䜛䛣䛸

ÓÔ䛩䜛䚹䝅䝭í䝺䞊䝅î䞁⤖ᯝ䛿䚸䝇䞊䝸䞁䜾䛻 䜘䛳䛶䝟䝹䝇䛜¬˜䛺䜛䛣䛸䜒䛧䛶䛔䜛䚹

(7) 䝇䞊䝸䞁䜾䛻䜘䜛Uྥ

130-nm䛸90-nm 䝥䝻䝉䝇䛻䛴䛔䛶䚸SET䛾䝟

䝹䝇䜢ẚ㍑䛧䛯䛾䛜ç 3.2.2-12 䛷䛒䜛䚹ç䛷䛿

ÍKìᑕ䛾䝕䞊䝍›䛡䜢⏝䛔䛯䚹LET䛾䛔

YZ䛛䜙୰ᗘ䛾YZ䛷䛿䚸90-nm 䝥䝻䝉䝇

䛾X䛜130-nm䜘‹䜒䝟䝹䝇䛜¬˜䛺䛳䛶䛔

䜛䚹୍XLET䛾㧗䛔YZ䛷䛿䚸䝟䝹䝇䛿—

ᗘ䛻䛺䛳䛶䛔䜛䚹᭱䜒⌧䛧䜔䛩䛔SET䝟

䝹 䝇䛿 䚸ç 3.2.2-6 䛸ç 3.2.2-9 䛛 䜙 䚸

90-nm䛷䛿500ps䛛䜙900ps䚸130-nm䛷䛿

400ps䛛䜙700ps䛻䛺䛳䛶䛔䜛䚹

䛣䛾䛣䛸䛛䜙䚸䝇䞊䝸䞁䜾䜢㐍䜑䜛䛸䚸Á

ㄽ•²䛿ë䝖䝷䞊䜢Ⓨ0䛧՘䛺䜛䛸

ò䛘䜛䚹

(8) ⤖ㄽ

130-nm䛸90-nm CMOS䛻䛴䛔䛶䚸䝟䝹䝇䛾’䜢䚸䝟䝹䝇ືᐃ•²䜢⏝䛔䛶㔜䜲䜸

䞁↷ᑕ¹_䛷@䜑䛯䚹¹_•²䛿䝍䞊é䝑䝖㒊䛾䜲䞁䝞䞊䝍›䛡䛷SET䝟䝹䝇䛜Ⓨ0䛧䚸ᐃ㒊䛿 䜲䜸䞁↷ᑕ䛾ᙳ㡪䜢V䛡䛺䛔䜘䛖䛻タィ䛥䜜䛯䚹䜎䛯䚸SET䝟䝹䝇䛾¾Å䛷䛾Ç䛜᭱¤䛻ᢚ䛘䜙 䜜䚸ṇ☜䛺䝟䝹䝇䛜ᐃ䛥䜜䜛䜘䛖䛻䛧䛯䚹䛣䜜䛻䜘䛳䛶䚸LET䛻ᑐ䛩䜛SET䝟䝹䝇䛾’䝕䞊

䝍䛜@䜑䜙䜜䚸⤌䜏ྜ䜟ᅇ㊰䛾䜶䝷䞊㠃✚䜢Öᗘ䜘䛟j✚䜒䜛䛣䛸䛜.⬟䛻䛺䛳䛯䚹TCAD䛷䛿䚸

€ሙᡤ䛾ኚ໬䛷SET䝟䝹䝇䛜ኚ໬䛩䜛䛣䛸䛜☜䛛䜑䜙䜜䛯䚹

㔜䜲䜸䞁䛾¹_⤖ᯝ䛛䜙䚸SET 䛻ᑐ䛩䜛 LET 䝇䝺䝑䝅䝵䞊䝹䝗䛿䚸130-nm 䝥䝻䝉䝇䛷䛿«

7MeV-cm2_{/mg䛷䛒䜛䛜䚸90-nm䝥䝻䝉䝇䛷䛿2MeV-cm}2_{/mg䜎䛷ప䛟䛺䜛䛣䛸䛜♧䛥䜜䛯䚹SET䛾}

Ⓨ⏕ᩘ䛿䚸130-nm䛸90-nm䛾œX䛸䜒LET䛻ᙉ䛟౫ 䛩䜛䚹୍X䚸90-nm䛷䛾䝟䝹䝇䛿LET

䜈䛾౫ ᛶ䛜¤䛺䛛䛳䛯䚹SET㠃✚䛿䚸130-nm䝥䝻䝉䝇䛷䛿䝟䝹䝇䛜400ps䛛䜙700ps䛾

Öୖ䛾⤖ᯝ䛛䜙䚸—୍↷ᑕ¿Àø䛷䛿䚸䝇䞊䝸䞁䜾䛻䜘‹SET䜢Ⓨ0䛩䜛䝟䝹䝇䛜¬˜䛺‹䚸

⤌䜏ྜ䜟ㄽᅇ㊰䛾䝋䝣䝖䜶䝷䞊䛜ຍ䛩䜛䛣䛸䛜♧䛥䜜䛯䚹

(9) ⪃ᐹ

㔜䜲䜸䞁䛻䛴䛔䛶䛾ᐇ_ᡭἲ䛸䛭䜜䛻䜘䛳䛶/䜙䜜䛯⤖ᯝ䚸ཬ䜃䛣䜜䜎䛷䛾◊✲ሗ࿌䛸䛾㛵ಀ䛜

య䛸䛧䛶䜘䛟䜎䛸䜑䜙䜜䛶䛔䜛䚹௒ᅇp⏝䛧䛯ື䝟䝹䝇ᐃᅇ㊰䛻䜘䛳䛶䚸SET 䝟䝹䝇䛾ศ

’䛜ṇ☜䛻Â䛘䜙䜜䛯䛾䛿ᡂᯝ䛷䛒䜛䚹×䛧䚸䜲䜸䞁↷ᑕ䛾⎔ቃ䛜130-nm䛸90-nm CMOS䛸䛷

Øᐦ䛻䛿ྠ୍䛻䛺䛳䛶䛔䛺䛔䚹↷ᑕタŽ䛜3䛺䜛䛧䚸LET 䜢ኚ䛘䜛䛾䛻 130-nm 䛷䛿Iᗘධᑕ䛷

⾜䛳䛶䛔䜛䛾䛻ᑐ䛧䚸90-nm 䛷䛿Í┤ධᑕ䛷Çᮦ䜢⏝䛔䜛䛸䛔䛖㐪䛔䛜䛒䜛䚹/䜙䜜䛯⤖ᯝ䛾ᅗ

3.2.2-6䛸ᅗ3.2.2-9䜢ẚ㍑䛧䛶䚸䝟䝹䝇䛻䛴䛔䛶䛿ྠ䛨Uྥ䛜/䜙䜜䛯䛸⤖ㄽ௜䛡䛧䛶䛔䜛䛜䚸䜒

䛧ྠ୍ᐇ_⎔ቃ䛷ᐃ䛧䛯䛺䜙䚸䜒䛳䛸ヲ⣽䛺ẚ㍑⤖ᯝ䛜/䜙䜜䛯䛾䛷䛿䛺䛔䛛䛸ᛮ䜟䜜䜛䚹

ཧ⪃ᩥ⊩

[1] L. W. Massengill, “Opportunities for single event modeling in emerging commercial technologies,” presented at the Eur. Conf. Radiation Its Effects on Components Systems, Fontevraud, France, Sep. 1999.

[2] N. Seifert, X. Zhu, and L. W. Massengill, “Impact of scaling on softerror rates in commercial microprocessors,” IEEE Trans. Nucl. Sci., vol. NS-49, no. 6, pp. 3100–3106, Dec. 2002.

[3] R. C. Baumann, “Single event effects in advanced CMOS technology,” in Proc. IEEE NSREC Short Course Text, 2005, pp. 1–59.

[4] P. E. Dodd and L. W. Massengill, “Basic mechanisms and modeling of single-event upset in digital microelectronics,” IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 583–602, Jun. 2003.

[5] M. Nicolaidis and R. Perez, “Measuring the width of transient pulses induced by onizing radiation,” in Proc. IEEE 41st IRPS, 2003, pp. 56–59.

[6] N. Kaul, B. L. Bhuva, and S. E. Kerns, “Simulation of SEU transients in CMOS ICs,” IEEE Trans. Nucl. Sci, vol. 38, no. 6, pp. 1514–1520, Dec. 1991.

[7] S. Buchner and M. Baze, “Single-event transients in fast electronic circuits,” in Proc. IEEE NSREC Short Course Text, 2001, pp. 1–105.

[8] M. Nicolaidis, “Time redundancy based soft-error tolerance to rescue nanometer technologies,” in Proc. IEEE VLSI Test Symp., Apr. 1999, pp. 86–94.

[9] A. Balasubramanian, B. L. Bhuva, J. D. Black, and L. W. Massengill, ͆RHBD techniques for mitigating effects of single-event hits using guard-gates,” IEEE Trans. Nucl. Sci, vol. 53, no. 6, pp. 2531–2535, Dec. 2005.

[11] J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Gadlage, and T. Turflinger, “Digital single event transient trends with technology node scaling,” IEEE Trans. Nucl. Sci, vol. 53, no. 6, pp. 3462–3465, Dec. 2006.

[12] M. J. Gadlage, R. D. Schrimpf, J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Sibley, K. Avery, and T. L. Turflinger, “Single event transient pulse widths in digital microcircuits,” IEEE Trans. Nucl. Sci, vol. 51, no. 6, pp. 3285–3290, Dec. 2004.

[13] V. Ferlet-Cavrois, P. Paillet, M. Gaillardin, D. Lambert, J. Baggio, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, K. Hirose, E. W. Blackmore, O. Faynot, C. Jahan, and L. Tosti, “Statistical analysis of the charge collected in SOI and bulk devices under heavy lon and proton irradiation—Implications for digital SETs,” IEEE Trans. Nucl. Sci, vol. 53, no. 6, pp. 3242–3252, Dec. 2006.

[14] B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, L. W. Massengill, J. D. Black, W. H. Robinson, and D. McMorrow, “On-chip characterization of single event transient pulse widths,” IEEE Trans. Device Mater. Rel., vol. 6, no. 4, pp. 542–549, Dec. 2006.

[15] “Circuit Simulator User Guide,” Cadence Spectre, San Jose, CA, Sep. 2003.

3.2.3 U䞁䜾䝹䜲䝧䞁䝖ᙉ໬䛧䛯130nm-CMOS䛾PLL䛻䛴䛔䛶

ᩥ⊩ A Single-Event-Hardened Phase-Locked Loop Fabricated in 130 nm CMOS

IEEE Transactions On Nuclear Science, Vol. 54, No. 6, pp.2012-2020,Dec 2007

Ú T. D. Loveless, Student Member, IEEE, L. W. Massengill, Fellow, IEEE, B. L. Bhuva, Senior Member, IEEE,W. T. Holman, Member, IEEE, R. A. Reed, Member, IEEE, D. McMorrow, Member, IEEE, J. S. Melinger, and P. Jenkins ᑐ㇟䝕䝞䜲䝇 䝭䜽䝇䝗䞉䝅䜾 䝹CMOS䝕䝞䜲䝇

ᐇ_タŽ

↷ᑕ⥺2ཬ䜃

䝹䞊䛾%

TPA (Two Photon absorption) Laser 1.9Þ30nJ

>Ⓨ⌧㇟䛿

±⟬⥺1ຠᯝ䛾%

>Ⓨ⌧㇟(SET)

ᐇ_䛿ㄽ䛾% ᐇ_

(1) ™ㄽ

PLL 䛿䚸䜽䝻䝑䜽0ᡂ䜔—໬䛻2䛻¸⏝䛥䜜䚸PLL 䛾 SET 䛻ᑐ䛩䜛ᛶ䛜䝅䝇G䝮䝟

䞊䞁䝇䛻k…䛺ᙳ㡪䜢䛘䜛䛯䜑䚸PLL䛾 SET≉ᛶ䜢ᐃ1໬䛩䜛䛣䛸䛿㔜せ䛷䛒䜛䚹䛣䜜䜎

䛷䛾◊✲䛷䛿䚸PLL 䛾ÓñÝ䝏ß䞊䝆䝫䞁䝥(C-CP)•²䛜䚸ï䛾ᵓᡂ•²䛻ẚÙ᭱䜒ᨺᑕ⥺ 䛻䛔䛸䛔䛖⤖ᯝ䜔䚸•²䝅䝭í䝺䞊䝅î䞁䜢⏝䛔䛯䝏ß䞊䝆䝫䞁䝥•²䛾䝅䞁䜾䝹䜲䝧䞁䝖⪏ᛶᙉ ໬Xἲ䛺ª䛜䛥䜜䛶䛝䛶䛔䜛䚹ᮏㄽᩥ䛷䛿䚸䝏ß䞊䝆䝫䞁䝥•²䛾⪏ᛶᙉ໬Xἲ䛾ຠᯝ䜢ᐇÚ䛩

䜛䛯䜑䚸MOSIS—䞁䝎䝸䞊䝃䞊Û䝇䛷Ü⏝.⬟䛺IBM䛾130nmCMRF8RF CMOSG䜽䝜䝻

䝆䞊䜢⏝䛔䛶䚸PLL 䜢タィ䞉.㐀䚸ホ౯¹_䜢^䛳䛯⤖ᯝ䛜䛥䜜䛶䛔䜛䚹↷ᑕ¹_䛿䚸TPA

(Two-Photon-Absorption) 䝺䞊䝄䞊䜢⏝䛔䛶䚸PLL•²䛾ᛂı䜢j±䜒䜛䛯䜑䛾SEU䝑

Ù䞁䜾䠄SET 䛻䜘‹ PLLa䛜䝷䞊䛸䛺䜛ྛᵓᡂ•²୰䛾ᛂ㒊䜢 2 Í䛷䝑䝥໬䠅䛸䚸

䝷䞊~㇟䛾ᐃ1໬䜢^䛳䛶䛔䜛䚹

(2) 䜵䞊䝈䝻䝑䜽䝗䝹䞊䝥

(a) PLL•²䛾ýÂ

PLL䛾㒊䛿䚸ç3.2.3-1䛷䛥䜜䜛䜘䛖䛻䚸఩Ñ<=ᩘ᳨j(PFD)䚸䝏ß䞊䝆䝫䞁䝥(CP)䚸

䝻䞊䝟䝇䜱䝹䝍(LPF)䚸㟁êไⓎj(VCO)䚸x÷䜢䝗䝷䜲䝤䛩䜛䝞䝑—䛷ᵓᡂ䛥䜜䜛䚹䛣䛾

◊✲䛷䛿䚸Óñ䛾㟁û䝧䞊䝇䛾䝏ß䞊

䝆䝫䞁䝥(C-CP)䜢ᐇÝ䛧䛯 CPLL 䛸䚸

RHBD 䛻䜘䜛㟁ê䝧䞊䝇䛾䝏ß䞊䝆䝫

䞁䝥(V-CP)䜢ᐇÝ䛧䛯VPLL䛾22㢮

䛜タィ䛥䜜䛶䛔䜛䚹PFD 䛷䛿䚸ᇶ䛸

䛺 䜛ධ ຊ¯ °(VREF)䛾¯ °䜶䝑 䝆 䛸

PLL䛾ฟຊ¯°(VoutPLL)䛾¯°䜶䝑䝆

䛸䛾఩ÑH䜢ẚ㍑䛧䚸఩ÑH䛻ᛂ䛨䛯

UP/DOWN¯°䜢⏕ᡂ䛩䜛䚹CP䛷䛿䚸

ᅗ3.2.3-1. PLL䛾䝤䝻䝑䜽ᅗ

䠄PFD䠖఩Ñ᳨ฟჾ䚸CP䠖䝏䝱䞊䝆䝫䞁䝥䚸LPF䠖

䛣䛾UP/DOWN¯°䜢⏝䛔䛶LPF䛾µ㟁Þᨺ㟁䜢^䛔䚸VCO䜈䛾ìa㟁ᅽ㸸VinVCOࢆไᚚ

ࡍࡿࠋࡇࡢࡼ࠺࡟ࡋ䛶䚸VCO䛾a<=ᩘ䛜ኚß䛥䜜䜛䚹

(b) 䝏ß䞊䝆䝫䞁䝥䛾タィ

ÓñÝC-CP䛷䛿䚸UP/DOWN¯°䛻䜘䜛LPF䛾µᨺ㟁䛿ᐃ㟁ûà䛷^䛖䚹㟁û್䛿2μA䛸

䛧䛶䛔䜛䚹ᐃ㟁û䛻䜘䜛µᨺ㟁䛾䛯䜑䚸䝸䝙䜰䝸G䜱䛜㧗˜䚸㟁à䝜䜲䝈䛾ᙳ㡪䜢V䛡䛻˜䛔䛸䛔䛖Ü

¶䛜䛒‹୍Šⓗ䛻䜘˜p⏝䛥䜜䜛䚹䝅䞁䜾䝹䜲䝧䞁䝖(SE)䛻䜘䜛J°㟁÷䜢á$䛩䜛©9䛿䚸Ⓨ0

㟁÷1䛻ẚ4䛧䚸Ⓨ0㟁÷䛜¼䛔㔜䜲䜸䞁¿Àø䛷䛿•}©9䛜㛗˜䛺䜛䛣䛸䛛䜙䚸ᨺᑕ⥺⪏ᛶ 䛻ᑐ䛧䛶䛿䜘‹䛸䛔䛘䜛䚹

୍X䚸䝅䞁䜾䝹䜲䝧䞁䝖⪏ᛶ䜢EF䛩䜛Xἲ䛸䛧䛶ÅÆ䛧䛶䛔䜛V-CP䛷䛿䚸LPF䛾µᨺ㟁䜢ᐃ

㟁êà䛷^䛺䛖䚹µᨺ㟁©9䛿䚸RC©ᐃᩘ䛷ㄪâ䛩䜛䚹㟁à㟁ê䛾ኚື䛾ᙳ㡪䜢V䛡Õ䛔䛸䛔䛖

k¶䛿䛒䜛䛜䚸䝅䞁䜾䝹䜲䝧䞁䝖⪏ᛶ䛻㛵䛧䛶䛿䚸䝅䞁䜾䝹䜲䝧䞁䝖䛻ᑐ䛧䛶䛺㒊఩䜢¤䛺˜䛷

䛝䜛䛣䛸䜔䚸µᨺ㟁㟁û䜢¼˜䛩䜛䛣䛸䛷䝅䞁䜾䝹䜲䝧䞁䝖䛛䜙䛾•}©9䜢 ˜䛷䛝䜛䠄PLL䛾఩Ñ

ไ䝹䞊䝥䛾ᛂãᛶ䜒㧗˜䛺䜛䠅䛣䛸䜔䚸©ᐃᩘ⏝䛾äå䛻䜘‹䚸䝏ß䞊䝆䝫䞁䝥a㒊䛾䛥䜢䚸

VCO䛾ไìa䛛䜙6䛷䛝䜛➼䛾ܶ䛜䛒䜛䚹

(c) PLL䛻䛚䛡䜛SET

䛣䜜䜎䛷䛾◊✲䛻䜘‹䚸PLL䛾SET䛻ᑐ䛩䜛ᛂã䛿䚸䝏ß䞊䝆䝫䞁䝥ð䝆í䞊䝹䛷䛾SETᛂã

䛜ᨭ¥ⓗ䛷䛒䜛䛣䛸䛜䛥䜜䛶䛝䛶䛔䜛䚹ç 3.2.3-2 䛿䚸C-CP䠄㟁ûÝ䝏ß䞊䝆䝫䞁䝥䠅䛾 pMOS

䛚䜘䜃nMOS䛻200fC䛾㟁÷䜢wì䛧䛯©䛻䚸VCO䛾ìa䛻Ⓨ0䛩䜛㟁ê䜢䝅䝭í䝺䞊䝅î䞁

䛧䛯⤖ᯝ䜢䛧䛶䛔䜛䚹䝖䝷䞁䝆䜵䞁䝖䛿 500ns9ü䛝䚸䛭䛾9䛻120 •䛾䝷䞊䞉䜽䝻䝑䜽䞉䝟 䝹䝇䛜Ⓨ0䛧䛶䛔䜛䚹⪏ᛶᙉ໬䛧䛯PLL䛻ᑐ䛩䜛—ᵝ䛾⤖ᯝ䛷䛿䚸䝷䞊䞉䜽䝻䝑䜽䞉䝟䝹䝇ᩘ 䛿䚸ᩘ•䛻䜎䛷ᢚไ䛥䜜䛶䛔䛯䚹ç3.2.3-3䛿䚸䝷䞊Ⓨ0©䛾䜽䝻䝑䜽఩Ñ䛾ኚ఩䜢䛧䛯䜒䛾䛷

䛒䜛䚹RHBD䛾V-CP䠄㟁êÝ䝏ß䞊䝆䝫䞁䝥䠅䜢ᐇÝ䛧䛯䜒䛾䛿䚸«2ᗘEF䛷䛝䛶䛔䜛䚹

ç 3.2.3-2. 700MHz 䛾<=ᩘ䛻䛚 䛡䜛

VinVCO 䛾䝅䞁䜾䝹䜲䝧䞁䝖©9ᛂã䝅䝭í

䝺䞊䝅î䞁⤖ᯝ䚹䝅䞁䜾䝹䜲䝧䞁䝖䛿䚸©…

1.2μs 䛷 200fC 䛾㟁÷䜢wì䛧Ⓨ0䛥

䛯䚹ᛂã䛿䚸280 䜽䝻䝑䜽䞉䝃䜲䜽䝹9æü

䛧䚸䛭䛾9䛻« 120 䜽䝻䝑䜽䞉䝃䜲䜽䝹䛾

䝷䞊䛜Ⓨ0䛧䛯䚹

ç 3.2.3-3. ྛ<=ᩘ䛻䛴䛔䛶 C-CP, VCO,

V-CP䛻500fC䛾㟁÷䜢Ⓨ0䛥䛯©䛾᭱

(3) _ᵓᡂ

SEE 䛾ᐇ_䛿䚸2 >ᏊÒJ(TPA)䝺䞊䝄䞊䛻䜘‹0ᡂ䛥䜜䜛㟁÷䜢⏝䛔䛯Xἲ䛷^䛳䛶䛔䜛䚹

TPA䛻䜘䜛SEE䛿䚸䜴䜵䝝Ä䛛䜙䛾↷ᑕ䛜.⬟䛷䛒䜛䛯䜑䚸ó䝍䝹L䛾ᙳ㡪䜢çá䛷䛝䚸䜎䛯䚸

䝸䝑䝥䝏䝑䝥ᐇÝ䛾䝕䝞䜲䝇䛷䜒¹_䛷䛝䜛䛸䛔䛖ܶ䜒䛒䜛䚹

ᮏᐇ_䛷䛿䚸䝕䝞䜲䝇䛻ᑐ䛧䛶䚸xyzXྥ䛻0.1μm䛾⬟䛷¹_䛷䛝䜛䝉䝑䝖䜰䝑䝥䜢⏝䛔䛶䛔 䜛䚹>Ꮫ䝟䝹䝇䛿䚸100G䛾ᑐè䝺䞁䝈䜢⏝䛔䛶䝕䝞䜲䝇⾲Ä䛻†¶䜢Á¹䚸Ké«1.6μm䛾^

䜴䝅䜰䞁Û䞊䝮䛾䝥䝻—䜲䝹䛸䛺䛳䛶䛔䜛䚹㟁÷wì1䛿䚸↷ᑕ1䛾2ê(I2_{)䛷ኚ໬䛩䜛䛾䛷䚸್༙}

༙䛜1.1μm䛾^䜴䝅䜰䞁㟁÷ᐦᗘ’䛸䛺䜛䚹䜎䛯䚸¹_䛿|z䛻䛶^䛳䛶䛔䜛䚹

(a) DUT䛾ᵓᡂ

DUT 䛾•²ᵓᡂ䜢ç 3.2.3-4 䛻䛩䚹DUT 䛿䚸C-CP 䜢ᐇÝ䛧䛯 CPLL 䛸䚸⪏ᛶᙉ໬䛧䛯

V-CP 䜢ᐇÝ䛧䛯 VPLL 䛾 2 2㢮䛷ᵓᡂ䛥䜜䚸䛭䜜ë䜜䚸ධຊ¯°(VREF1, VREF2)䛸ฟຊ¯°

ᅗ3.2.3-4. 2䛴䛾PLL (CPLL䛸VPLL)䛜ྵ䜎

䜜䜛DUT䛾䝤䝻䝑䜽ᅗ䚹2䛴䛾䝸䝣—䝺䞁䝇䜽䝻䝑䜽 䛜⏕ᡂ䛥䜜䜛䚹

ᅗ3.2.3-5. (a)VCO, (b)C-CP, (c)V-CP䛾ᅇ ㊰䝤 䝻 䝑 䜽ᅗ䚹 䝺 䞊 䝄 䞊 䞉 䝍 䞊䝀䝑 䝖 䛻 1μm×1μm䛾m7YZ䜢タ䛡䛶䛔䜛䚹

ᅗ 3.2.3-6. VCO 䛾ኚìQ⥺ᐃ್䚹୰í࿘Ἴ

ᩘ䛿« 200MHz䚸᭱኱࿘Ἴᩘ䛿 500MHz 䛸

600MHz䚸PLL 䛾 䝻 䝑 䜽 䝺 䞁 䝆 䛿 40MHz 䡚

(VoutCPLL 8 VoutVPLL)䜢㒊䛻a䛩䜛䝟䝑䝗䛜タ䛡䜙䜜䛶䛔䜛䚹ç 3.2.3-5 䛿䚸VCO䚸C-CP䚸

V-CP䛾•²ç䛸䚸䛭䜜ë䜜䛾•²䛾᭱䜒䝉䞁䝅G䜱䝤䛺䝜䞊䝗䜢䛧䛶䛔䜛䚹

᭱䜒䝉䞁䝅G䜱䝤䛺䝜䞊䝗䛻䛿䚸SET䛾ᐃ1໬䜢^䛖ᐇ_䛾䛯䜑䛻䚸䝺䞊䝄䞊䞉䝍䞊é䝑䝖䛸䛧䛶î

ä䛥䛯1μm×1μm䛾m7YZ䜢タ䛡䛶䛔䜛䚹ᮏᐇ_䛷䛾VCO䛾㟁ï≉ᛶ䛿䚸ç3.2.3-6䛻

䛩䜘䛖䛻䚸୰í<=ᩘ䛿«200MHz䠄VinVCO=Vdd/2䛾©䠅䚸᭱<=ᩘ䛿䚸CPLL䛷䛿530MHz䚸

VPLL䛷䛿600MHz䛷䛒䜛䚹䝻䝑䜽䝺䞁䝆䛿{䛻40MHzÞ350MHz䛸䛔䛖⤖ᯝ䛜/䜙䜜䛶䛔䜛䚹

SEU䝑Ù䞁䜾䛷䛿䚸PLL䛾<=ᩘ䜢200MHz䛷^䛳䛶䛔䜛䚹

(b) TPA䜢⏝䛔䛯SEU䝑Ù䞁䜾

PLL䛾ྛð䝆í䞊䝹䛻ᑐ䛧䛶䚸TPA䝺䞊䝄䞊䜢0.2μm9ð䛷↷ᑕ䛧䚸SEU䠄PLL䛾䝻䝑䜽䛜

䜜䛯ÈK䠅䛾Ⓨ0఩⨨䜢2Í䝥䝻䝑䝖䛧䚸SEU䝑Ù䞁䜾䜢Ã/䛧䛯䚹PLL䛾䝻䝑䜽䜜䛾ᇶ䛿䚸

³ñ໬䛥䜜䛶䛔䛺䛔䛯䜑䚸⾲ 3.2.3-1 䛻䛩䜘䛖䛻ᩘ♫䛾ᇶ䜢}õ䛻䚸160 䜽䝻䝑䜽୰䛻 2.5ns

Öୖ䛾఩Ñ·H䛜 6 䝃䜲䜽䝹ÖୖⓎ0䛧䛯

¬Á䛸ᐃ䜑䛯䚹䝻䝑䜽䜜䜢&䛩䜛䛯䜑䛻䚸

20Gs/s 䛷䝃䞁䝥䝸䞁䜾䛷䛝䜛䜸䝅䝻䝇|䞊䝥

䠄Tectronix ♫ TD6124C䠅䜢¸⏝䛧䛯䚹䝺䞊

䝄䞊䛿䚸ྛ䝫䜲䞁䝖䛻ᑐ䛧䛶1KHz䛾ò‹ó䛧

䝃 䜲 䜽 䝹 䛷 10msec 9n䛴 ↷ ᑕ 䛧 䛯 䚹ç

3.2.3-7 䛻䚸SEU Ⓨ0©䛾=Û䛾&4䜢

䛩䚹䛣䛾=Û䛿䚸ື/<=ᩘ 200MHz 䛷䚸

C-CP䛻7.0nJ䛾䝺䞊䝄䞊䜢↷ᑕ䛧䛯©䛾䜒

䛾䛷䛒‹䚸䝺䞊䝄䞊↷ᑕà䚸« 420nsec 9

䝻䝑䜽䛜䜜䛶䛔䛯䚹

ç 3.2.3-8. (a)20MHz 䛾<=ᩘ䛷Ⓨ䛧䛶䛔䜛

CPLL䛾C-CP䛻30nJ䛾䝺䞊䝄䞊䜢↷ᑕ䛧䛯䛸 䛝䛾䚸ìa¯°䛸a¯°䛾©9ᛂã=Û䚹(b) ↷ᑕ䛧䛯䝺䞊䝄䞊䛾㟁ê=Û䚹

ç3.2.3-7. C-CP䛻7.0nJ䛾䝺䞊䝄䞊䜢↷ᑕ䛧

䛯©䛾 SEU䠄䝻䝑䜽䜜䠅䛾=ÛÃ/⤖ᯝ䚹ື

/<=ᩘ䛿200MHz䛷䛒‹䚸«420ns9䝻䝑䜽 䛛䜙䜜䛶䛔䛯䚹