3 ᴗົᐇ⤖ᯝ
3.1 㻌 ⪏ᨺᑕ⥺ᛶᙉᢏ⾡
3.2.12 ᴟⷧ HfO 2 -MOSFET ࡢᨺᑕ⥺↷ᑕࡼࡿ㟁Ⲵᤕ⋓
ᩥ⊩ྡ Radiation Induced Charge Trapping in Ultrathin HfO2-Based MOSFETs ฟ IEEE Transaction on Nuclear Science, Vol. 54, No. 6, pp. 1883-1890, Dec. 2007.
ⴭ⪅ྡ S. K. Dixit, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, R.
Choi, G. Bersuker, and L. C. Feldman ᑐ㇟ࢹࣂࢫ HfO2-MOSFET
ᐇ㦂タഛ ARACOR irradiator
↷ᑕ⥺✀ཬࡧ
࢚ࢿࣝࢠ࣮ࡢ༊ศ
10keV X-rays ༢Ⓨ⌧㇟ཪࡣ
✚⟬⥺㔞ຠᯝࡢ༊ศ
✚⟬⥺㔞ຠᯝ ᐇ㦂ཪࡣ
⌮ㄽࡢ༊ศ
ᐇ㦂
(1) Ø
rMHfO2-MOSFET 10keV X⥺↷ᑕ䛻䜘䜛㟁÷uv䛻䛴䛔䛶᳨ウ䜢^䛳䛯䚹↷ᑕ䛚䜘䜃㟁
ê䝇䝖䝺䝇䛻䜘㟁÷uv䛜&䛥䜜䛯䛜è⏺Äᐦᗘ䛾ºÚ䛺ຍ䛿j䜙䜜䛺䛛䛳䛯䚹䜎䛯䚸㟁 ê"ຍ䛸↷ᑕ䜢©䛻^䛖䛣䛸䛻䜘uv㟁÷1䛿ຍ䛧䛯䚹N䛔]^dN䛾¹ᩱ䛷䛿䚸↷ᑕà䛾 䜰䝙䞊䝹䛻䜘uv㟁÷䛾ᨺ䛜☜ㄆ䛥䜜䛯䚹M䛔]^d䛾¹ᩱ䛷䛿䚸㧗䛔⪏ᨺᑕ⥺ᛶ䜢☜ㄆ䛧 䛯䚹୍X䚸㧗E㟁s]^d䛻䛚䛡䜛㟁÷uv1䜢䛩ÜÉ“fot”䜢⏝䛔䛯᳨ウ䜒^䛳䛯䚹
Index Terms: Constant-voltage-stress (CVS), HfO2, High-k, MOSFETs, radiation damage, recovery, ultrathin, X-ray.
(2) ᗎㄽ
°±²䛾㧗ᐦᗘ䛻క䛔MOSFETcdN䛾Md䛜\⏺䛻㏆䛵䛔䛶䛚䚸㧗E㟁s]
^d䛾◊✲䛜㐍䜑䜙䜜䛶䛔䜛䚹≉䛻HfO2䛿ẚ㍑ⓗ㧗䛔ẚE㟁s(15Þ26)䜢䛧䛶䛚䚸SiO2䛻®
¹䜛]^d䛸䛧䛶w┠䛥䜜䛶䛔䜛䚹䛯䛧䚸ᨺᑕ⥺↷ᑕ䛻䜘䜛HfO2-MOSFET䛾ຎ䛻䛴䛔䛶䛿◊
✲ୖ䛷䛒䜛䚹䛾◊✲䛷䛿䚸N䛔]^d䜢⏝䛔䛯⤖ᯝ䚸SiO2ᵝṇeuv䛜ᨭ¥ⓗ䛷䛒䜛䛜䚸 Md䛷䛿HfO2୰䛷䛿㟁Ꮚuv䛜ᨭ¥ⓗ䛸䛺䚸
2䛻SiO2øᆅL䛷䛾ṇeuv䛸䚸HfO2L䛷䛾ṇ e䞉㟁Ꮚuv䛾䛜㔜せ䛷䛒䜛䛸õ䛘䜙䜜䜛䚹 ᮏ ◊ ✲ 䛷 䛿 䚸HfO2d N = 3.0, 7.5nm䛾 MOSFET䛾↷ᑕES㟁÷uv䚸䛚䜘䜃↷ᑕà 䛾"ຍ㟁ê ᛶ䛻䛴䛔䛶᳨ウ䜢^䛳䛯䚹
(3) ᐇ㦂᪉ἲ㻌
65nm CMOS 䝥䝻䝉䝇䛻䜘èSi 䜴䜵䝝ୖ䛻 TiN é䞊 䝖 HfO2 n-MOSFET 䜢/ .䛧 䛯 (W/L=10/0.25μm)䚹ç 3.2.12-1䛻䝕䝞䜲䝇Ä
ç䜢䛩䚹HfO2d䛿䚸dN1nmᗘ䛾䝭ô䝹SiO2dୖ䛻䚸TEMAH (G䝖䝷䝇䝏䝹ó䝏䝹䜰 ᅗ 3.2.12-1. ᮏᐇ㦂࡛⏝࠸ࡓ nMOSFET ࡢ᩿㠃ᅗ
䝭䝜䝝䝙䜴䝮)+O3䜢⏝䛔䛯 ALD ἲ䛻䜘³±䛧䚸N2୰䛷 PDA 䜢^䛳䛯䚹HfO2 䛾dN䛿 7.5, 3.0nm䚸EOT䛿ྛå2.3, 1.5nm䛳䛯䚹
ྛ¹ᩱ䛻ᑐ䛧䚸ARACOR䛾↷ᑕタ䜢⏝䛔䛶 10keV䛾X⥺䜢↷ᑕ䛧䛯䚹↷ᑕ୰䚸é䞊䝖㟁ê䜢
"ຍ䛧䚸䛭䛾ï䛾➃Ꮚ䛿äᆅ䛧䛯䚹ÒJ⥺1s䛿 31.5krad(SiO2) / min䛸䛧䚸10Mrad(SiO2)䜎䛷↷
ᑕ䜢^䛳䛯䚹↷ᑕ䝇G䝑䝥Ë䛻↷ᑕ|䛷I-V ᐃ䜢ᐇ䛧䚸䛧䛝䛔್㟁êኚ䚸䝃䝤䝇䝺䝑䝅î䝹䝗
≉ᛶ䚸䝸䞊䜽㟁û䛾ホ౯䜢^䛳䛯䚹䜎䛯䚸↷ᑕ䛚䜘 䜃㟁ê䝇䝖䝺䝇䛾ᙳ㡪䜢Ñå䛻ホ౯䛩䜛䛯䜑䚸↷ᑕ
©9䛻Ñ䛩䜛ᐃ㟁ê䝇䝖䝺䝇(CVS)䛻䛴䛔䛶䜒᳨
ウ䜢^䛳䛯䚹䛺䛚䚸↷ᑕ䛻䜘䜛⏺Äᐦᗘ䛾 1䛺ຍ䛿&䛥䜜䛺䛛䛳䛯䚹䛣䜜䛿HfO2 䛻䛚 䛔䛶䛿୍ⓗ䛜䚸䝥䝻䝉䝇䛻䜒 䛩䜛䚹䛺䛚䚸 é䞊䝖"ຍ㟁ê䛿䚸]^dN7.5, 3.0nm䛾¹ᩱ䛻 ᑐ䛧ྛå+2 ~ 2Vè+1 ~ 1V䛷䛒䚸]^d㟁
⏺䛻ì⟬䛩䜛䛸ྛå+2.7 ~ 2.0MV/cm, +3.0 ~
1.9MV/cm䛸䛺䜛䚹 (4) ⤖ᯝ࠾ࡼࡧ⪃ᐹ㻌
(a) ↷ᑕ䛾ᐃ⤖ᯝ
Ids-Vgs≉ᛶ䜢ᐃ(Vds =0.1V)䛧䛯⤖ᯝ䚸dN 7.5, 3.0nm 䛾¹ᩱ䛾䛧䛝䛔್㟁ê VT 䛿䚸«
0.75V, 0.45V䛳䛯䚹䜎䛯䚸Vgs =1V䛷䛾䝸䞊䜽㟁 û䛿«1pA, 30nA䛷䛒䚸䛣䜜䛿䚸୍ⓗ䛺್䛷 䛒䜛䚹
(b) ࢺ࣮ࢱࣝࢻ࣮ࢬຠᯝ
ç3.2.12-2(a), (b) 䛻䚸ྛ¹ᩱ䛻䛚䛡䜛X⥺↷
ᑕà䛾 Ids-Vgs≉ᛶ䜢䛩䠄↷ᑕ୰䛾é䞊䝖㟁ê
=0V䠅䚹dN 7.5nm 䛾¹ᩱ䛷䛿䚸VTኚ(VT)䛿 10Mrad(SiO2)䛷0.35V 䛷 䛒 䛳 䛯(Not = 3.2×1012 cm2䛻Ñ)䚹VT䛿¦ᐃ㟁÷ຍ䛻䜘 䜛䜒䛾䛜ᨭ¥ⓗ䛷䚸⏺Äຍ䛻䜘䜛ᙳ㡪䛿ú 䛥䛔䠄Ids-Vgs䛾U䛝䛜ኚ䠅䚹୍X䚸dN3.0nm䛾
¹ᩱ䛷䛿VT䛜O䛻ú䛥䛔䛣䛸䛜¹䛛䛳䛯䚹 ᅗ3.2.12-3, ᅗ3.2.12-4ྛヨᩱࡢVTࢆ♧
䛩䚹"ຍ㟁ê䛻䜘䜙n3.0nm䛾¹ᩱ䛿VT䛜ú䛥
䚸⪏ᨺᑕ⥺ᛶ䛻y䜜䛶䛔䜛䚹䜎䛯ç3.2.12-3䛿䚸↷ᑕ䛻䜘䜛㟁÷uv䛸㟁ê"ຍ䛻䜘䜛uv䛜㔜 ᅗ3.2.12-3. ↷ᑕࡼࡿVTࡢ↷ᑕ୰
ࡢ༳ຍ㟁ᅽ౫Ꮡᛶࠋ⤯⦕⭷ཌ7.5nm (a)
(b)
ᅗ3.2.12-2. 0V༳ຍ࠾ࡅࡿX⥺↷ᑕ
ࡼࡿI-V≉ᛶࡢኚ (a)⤯⦕ⷧ⭷7.5nm (b)⤯⦕ⷧ⭷3.0nm
䛺䛳䛯⤖ᯝ䛸õ䛘䜙䜜䜛䚹䛺䛚䚸↷ᑕ䛻䜘䜛 䝸䞊䜽㟁û䛾䛝䛺ຍ䛿&䛥䜜䛺䛛䛳䛯䚹
ྛ䝕䝞䜲䝇䛾øᆅL䛿୍䛾䛯䜑䚸dN䛻䜘 䜛 VT䛾H䛿 HfO2䝞䝹䜽䛷䛾㟁÷uv䛻 ST䛩䜛䚹ᮏHfO2d䛿㧗zPDA䛻䜘⤖è
䛧䚸 䝜⤖è䛾°ྜ⪃࠼ࡽࢀࡿࠋࡼࡗ࡚
㓟⣲✵ࡸ᱁ᏊḞ㝗ࡣࠊࢢࣞࣥቃ⏺ᒁ ᅾࡋࠊHfO2ࣂࣥࢻࢠࣕࢵࣉෆᏙ❧ࡋࡓ 㟁Ⲵࢺࣛࢵࣉࢆ⏕ᡂࡋࡓࡶࡢ⪃࠼ࡽࢀ
ࡿࠋ
(c) ᐃ㟁ᅽࢫࢺࣞࢫ࠾ࡼࡧ↷ᑕ୰ࡢ㟁ᅽ༳ ຍ
dN7.5nm䛾¹ᩱ䛻ᑐ䛧䚸ᐃ㟁ê䝇䝖䝺䝇
(CVS)䛻䜘䜛㟁÷uv䛻䛴䛔䛶ホ౯䛧䛯䚹䛣
䜜䛿 HfO2 䝞䝹䜽䛷䛾䛔䛾䝖䝷䝑䝥䛷 䛾uv䛻䜘䜛䛸õ䛘䜙䜜䜛䚹CVS 䛾©9䛿 10Mrad(SiO2)↷ᑕ©9䛸䛨5©9䛸䛧䛯䚹 䛺䛚䚸㛗©9䛾0V"ຍ䛷䛿≉ᛶ䛿ኚ䛧䛺 䛛䛳䛯䚹
1) x㟁ê䝇䝖䝺䝇䛚䜘䜃↷ᑕç3.2.12-5䛻
2V 䛾↷ᑕ䞉%↷ᑕ䛷䛾 VT 䜢䛩䚹 CVS䛷䛿䝇䝖䝺䝇㛤Kà䛻ኚ䛩䜛䜒䛾 䛾䚸VT = 0.15V ᗘ ( Not = 1.4 × 1012cm2)䛷!O䛧䛯䚹୍X䚸↷ᑕ䜢^䛳 䛯¬Á䛿« 3 G䛾ኚ䛸䛺䛳䛯 ( VT =
0.42V, Not = 3.8×1012cm2)䚹
VT = 0.15V䛸䛔䛖ẚ㍑ⓗ䛝䛺ኚ䛿䚸 HfO2 ୰䛻䛔䛾䝖䝷䝑䝥䛜 »䛧䛶 䛔䜛䛣䛸䚸䛚䜘䜃øᆅd䛜䝖䞁䝹䛻ᑐ䛩䜛
#䛺䝞䝸䜰䛸䛧䛶¥䛔䛶䛔䛺䛔䛣䛸䛜`
T䛸õ䛘䜙䜜䜛䚹
2) ṇ㟁ê䝇䝖䝺䝇䛚䜘䜃↷ᑕç3.2.12-6䛻 +2V 䛷䛾⤖ᯝ䜢䛩䚹䝞䞁䝗䜸䝉䝑䝖䛾 㐪䛔䛛䜙䚸ᇶf䛛䜙䛾㟁Ꮚwì䛜䚸é䞊䝖 㟁r䛛䜙䛾ṇewì䛻ẚÙ䛶ᨭ¥ⓗ䛻䛺 䜛䚹⤖ᯝ䜘䚸↷ᑕ䛷䜒㟁Ꮚ䝖䝷䝑䝥䛜
»䛧 䛶 䛔 䜛 䛣 䛸 䛜Â䜙 䛛 䛸 䛺 䛳 䛯 䚹 䜎 䛯 䚸
1Mrad(SiO2)Öø䛷䛿 CVS 䛻䜘䜛㟁Ꮚuv䛜ᨭ¥ⓗ䛷䛒䚸䛭䜜Öୖ䛷䛿 HfO2 䛺䛔䛧䛿 ᅗ3.2.12-4. ↷ᑕࡼࡿVTࡢ↷ᑕ୰ࡢ
༳ຍ㟁ᅽ౫Ꮡᛶࠋ⤯⦕⭷ཌ3.0nm
ᅗ3.2.12-5. ༳ຍ㟁ᅽ㸫2V࠾ࡅࡿCVS࠾
ࡼ ࡧ CVS+↷ ᑕ ࡼ ࡿ VT㸦 ⤯ ⦕⭷ཌ
7.5nm㸧ࠋୗ㍈ࡣ྾⥺㔞ࠊୖ㍈ࡣ ᐃ㛫
ࢆ♧ࡍࠋ
ᅗ3.2.12-6. ༳ຍ㟁ᅽ+2V࠾ࡅࡿCVS࠾
ࡼ ࡧ CVS+↷ ᑕ ࡼ ࡿ VT㸦 ⤯ ⦕⭷ཌ
7.5nm㸧ࠋୗ㍈ࡣ྾⥺㔞ࠊୖ㍈ࡣ ᐃ㛫
SiO2䛷䛾ṇeuv䜎䛯䛿୰ᛶ䛻䜘䚸ṇ䛾VT 䛜¤䛩䜛䜒䛾䛸õ䛘䜙䜜䜛䚹䛔n䜜䛻䛧䛶䜒䚸
↷ᑕESṇeuv䜘䜒䚸CVSES㟁Ꮚuv䛜ᨭ¥ⓗ䛷䛒䜛䛣䛸䛜¹䛛䛳䛯䚹
(d) 㟁ᅽ༳ຍࡼࡿࢽ࣮ࣝຠᯝ
7.5nm 䛾¹ᩱ䛻ᑐ䛧䚸↷ᑕKà䛾㟁ê
"ຍ䜰䝙䞊䝹䜢ᐇ䛧䛯䚹↷ᑕ୰䛸䜰䝙䞊 䝹㟁ê䛿2åኚ䛧䛯䚹⾲ 3.2.12-1 䛻↷
ᑕà䚸䛚䜘䜃↷ᑕà䛾䜰䝙䞊䝹ᐇà䛻 䛚䛡䜛Not䜢䜎䛸䜑䛶䛩䚹
1) 2V ↷ᑕÞ+2V 䜰䝙䞊䝹⤖ᯝ䜢ç
3.2.12-6 䛻䛩䚹䜰䝙䞊䝹䛻䛚䛡䜛㟁
Ꮚwì䛻䜘↷ᑕESuvṇe䛿#Ø 䛧䛯à䚸㟁Ꮚuv䛜0䛨è䜰䝙䞊䝹à䛾 VT䛿CVS䛾⤖ᯝ䠄ç3.2.12-5䠅䛸o
ᵝ䚸VT = +0.12V(Not = 1.1×1012cm2)䛸䛺䛳䛯䚹
2) +2V ↷ᑕÞ2V 䜰䝙䞊䝹⤖ᯝ䜢ç 3.2.12-7 䛻䛩䚹↷ᑕ䛻䜘㟁Ꮚ䛜uv䛩䜛䜒䛾䛾䚸䜰
䝙䞊䝹à䛷䛿ṇeuv䛜ᨭ¥ⓗ䛻䛺䛳䛯䚹䜰䝙䞊䝹à䛾VT (0.26V)䛿䚸↷ᑕ䛾CVS䠄ç
3.2.12-4䠅䜘䜒䛝䛺䜛䛣䛸䛜¹䛛䛳䛯䚹䛣䜜䛿䚸↷ᑕ䛻䜘䠄㟁Ꮚ䛸{䛻䠅uv䛥䜜䛯ṇe䛜䚸
䜰䝙䞊䝹䛻䜘#Ø䛧䛺䛛䛳䛯䛣䛸䛜`T䛸õ䛘䜛䠄㟁Ꮚ䛿#Ø䠅䚹䛩䛺¹A䚸↷ᑕ䛻䜘uv䛥䜜 䛯ṇe䛜O䛻Iᐃ䛷䛒䚸ຍ䛘䛶䚸䜰䝙䞊䝹䛻䜘䜛ṇeuv䛜0䛨䛯䜒䛾䛸õ䛘䜙䜜䜛䚹
(5) ᐇຠⓗ࡞㟁Ⲵᤕ⋓ຠ⋡㻌
㧗E㟁s]^d䛾ᐇຠⓗ䛺㟁÷uvຠs fot 䛻䛴䛔䛶䚸Felix 䜙䛜Öø䛾䜘䛖䛻ÅÆ䛧䛶䛔䜛 [1]䚹
fot = −ΔVotεox qκgfyteqtphysD
(1)
䛣䛣䛷䚸Vot 䛿䛧䛝䛔್㟁êኚ䚸εox 䛿 SiO2䛾E㟁s䚸q 䛿㟁Ꮚ㟁÷1䚸κg 䛿㟁Ꮚṇeᑐ
⾲ 3.2.12-1. 㟁ᅽࢆ༳ຍࡋ࡚ 10Mrad (SiO2)↷
ᑕࡋࠊࡑࡢᚋࠊ༳ຍ㟁ᅽࢆኚࡉࡏᐊ ࢽ࣮
ࣝࢆᐇࡋࡓ㝿ࡢ⤯⦕⭷୰ᅛᐃ㟁Ⲵᐦᗘኚ
( Not)ࠋ↷ᑕ┤ᚋࠊࢽ࣮ࣝ㛤ጞᚋ1ศᚋࠊ5
㛫ᚋࡢ್ࢆྛࠎ♧ࡍࠋ
ᅗ3.2.12-7. ༳ຍ㟁ᅽ-2V࡛10Mrad(SiO2)
↷ᑕࡋࠊࡑࡢᚋࠊ+2V༳ຍࡋᐊ ࢽ࣮ࣝ
ࡋࡓࡢVTኚ㸦⤯⦕⭷ཌ7.5nm㸧ࠋ
ᅗ3.2.12-8. ༳ຍ㟁ᅽ+2V࡛10Mrad(SiO2)
↷ᑕࡋࠊࡑࡢᚋࠊ㸫2V༳ຍࡋᐊ ࢽ࣮ࣝ
ࡋࡓࡢVTኚ㸦⤯⦕⭷ཌ7.5nm㸧ࠋ
40Ïᩘ[cm-3rad-1]䚸fy 䛿㟁÷0ᡂs䚸teq 䛿 EOT䚸tphys 䛿]^dN䚸D 䛿]^d୰䛾ÒJ⥺
1䛷䛒䜛䚹uv୰í䛿/.©䛻Ûᡂ䛥䜜䜛䛸,ᐃ䛧䛶䛚䚸↷ᑕ䛻䜘䜛0ᡂ䛻䛴䛔䛶䛿õ䛘䛶䛔䛺 䛔䚹ᮏᵓ㐀䛷䛿䚸]^d䛜N䛔Siᇶf䜔TiN䛻C䜎䜜䛶䛚䚸rM]^d䛾ÒJ⥺1䛿<C䛾ᮦ
º䛾Z䛻䜘oỴᐃ䛥䜜䜛䚹䛭䛣䛷䚸]^d୰䛷䛾dose deposit䛿Si୰䛸䛨䛷䛒䜛䛸,ᐃ䛧䛯 (TiN: Z=14.5, Si: Z=14)䚹SiO2 䛸䛨䛷䛒䜛䛸,ᐃ䛧䛶䛔䜛ᩥ⊩䛜¼䛔䛜䚸Si䛾dose 䛿SiO2 䛾 1.8Gᗘ䛷䛒䚸ÒJ⥺1D 䛾⟬ᐃ䛻䛚䛔䛶ᙳ㡪䜢ཬ䛩䚹䛣䛾,ᐃ䜢⏝䛔䜜䚸HfO2 䛸SiO2
䛾㟁ᏊéṆ⬟䛾㐪䛔䜢õ:䛩䜛せ䛜䛺䛺䜛䚹
å䛿Shockley-KleinXᘧ[2]䜘䚸HfO2 䛻䛚䛔䛶e-hᑐⓎ0䛻せ䛺䝹䞊䜢15eV 䛸⟬䛧䚸κg = 9.2×1012 cm3rad1(HfO2) 䛸ホ౯䛧䛯䚹䛣䜜䛿èFelix䜙䛾ሗ䜘䜒27%ᗘú䛥 䛺್䛷䛒䜛䠄Felix 䜙䛿èSiO2 䛸䛾䝹䞊ß䝑䝥䛾H3䜘䚸㟁ᏊṇeᑐⓎ0䛻せ䛺䝹 䞊䜢11eV䛸j±䜒䛳䛶䛔䜛䚹䠅
㟁÷0ᡂs fy 䛿㟁⏺䛻 䛧䚸䜎䛯 SiO2 䛻㛵䛩䜛䝕䞊䝍䛧䛛Ⓨ⾲䛥䜜䛶䛔䛺䛔䚹䛭䛣䛷䚸fy 䛿 SiO2 䛾ᩥ⊩್䜢¸⏝䛧䛯[3]䚹]^d㟁⏺䛛䜙䚸0V "ຍ©䛾 fy 䛿䚸dN 7.5nm 䛷 0.35±0.05, 3.0nm䛷0.45ᗘ䛸,ᐃ䛧䛯䚹
䛣䜜䜙䛾್䜢¸⏝䛧䛶䚸500 krad(SiO2)↷ᑕ䠄0V"ຍ䠅䛻䜘䜛VT 䛛䜙ᐇຠⓗ䛺㟁÷uvຠs䜢 ホ౯䛧䛯⤖ᯝ䚸dN7.5nm䛷45±6 %, 3.0nm䛷13%ᗘ䛸䛺䛳䛯䚹
(6) ⤖ㄽ㻌
é䞊䝖]^dN7.5nm䛾 HfO2-FET 䛷䛿䚸㟁÷wì䛻ᑐ䛧䛶"ຍ㟁ê䛻䜘䜛ᙳ㡪䛜O䛻 䛝䛔䛣䛸䛜¹䛛䛳䛯䠄ṇ䝞䜲䜰䝇"ຍ©䛷䛿㟁Ꮚuv䛜䚸x䝞䜲䜰䝇䛷䛿ṇeuv䛜ᨭ¥ⓗ䠅䚹䜲䝙 䝅ß䝹䛺㟁÷䝖䝷䝑䝥䛻䜘䜛uv䛻䜘䚸↷ᑕ୰䛺䛔䛧䛿↷ᑕà䛻"ຍ㟁êrᛶ䜢㌿䛩䜛䛸䚸VTr ᛶ䜒㌿䛩䜛䛣䛸䛜¹䛛䛳䛯䚹rM]^d䛾䝕䝞䜲䝇䛷䛿䚸↷ᑕ䛻䜘䜛ኚ䛜O䛻ú䛥䛺䜛䛣䛸 䛜☜ㄆ䛥䜜䚸Çàèᨺᑕ⥺⪏ᛶ䛻y䜜䛯䝕䝞䜲䝇䛾o)䛸䛧䛶w┠䛥䜜䜛䚹
ཧ⪃ᩥ⊩
[1] J. A. Felix et al.: IEEE Trans. Nucl. Sci., Vol. 49, No. 6, pp. 3191-3196, 2002.
[2] C. A. Klein: J. Appl. Phys., Vol. 39, pp. 2029-2038, 1968.
[3] J. M. Benedetto et al.: IEEE Trans. Nucl. Sci., Vol. NS-33, pp. 1318-1323, 1986.