NTZD3152P MOSFET – Dual, P-Channel with ESD Protection, Small Signal, SOT-563

MOSFET – Dual, P-Channel with ESD Protection,

Small Signal, SOT-563

-20 V, -430 mA

Features

• ^{Low R}

Improving System Efficiency

• Low Threshold Voltage

• ESD Protected Gate

• Small Footprint 1.6 x 1.6 mm

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Parameter Symbol Value Unit

Drain−to−Source Voltage V_DSS −20 V

Gate−to−Source Voltage V_GS ±6.0 V

Continuous Drain Current

(Note 1) Steady

State

TA = 25°C

I_D −430 mA

T_A = 85°C −310 Power Dissipation

(Note 1) Steady State P_D 250 mW

Continuous Drain Current

(Note 1) t v 5 s T_A = 25°C

I_D −455 mA

T_A = 85°C −328 Power Dissipation

(Note 1) t v 5 s PD 280 mW

Pulsed Drain Current tp = 10 ms I_DM −750 mA Operating Junction and Storage Temperature T_J,

TSTG

−55 to 150 °C

Source Current (Body Diode) I_S −350 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) T_L 260 °C

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V_(BR)DSS R_DS(on) Typ I_D Max

−20 V

0.5 W @ −4.5 V

0.6 W @ −2.5 V −430 mA 1.0 W @ −1.8 V

ORDERING INFORMATION Top View

D₁

G₂

S2

S₁

G₁

6

5

4 1

2

3 D₂

PINOUT: SOT−563 P−Channel

MOSFET D₁

S1

G₁

D₂

S₂ G₂

TU = Specific Device Code M = Date Code

G = Pb−Free Package TU MG 1 G

MARKING DIAGRAM 1

6

SOT−563−6 CASE 463A

(Note: Microdot may be in either location)

NTZD3152P

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ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted.)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/TJ 18 mV/°C

Zero Gate Voltage Drain Current I_DSS VGS = 0 V, V_DS = −16 V

T_J = 25°C −1.0 mA

T_J = 125°C −2.0

Gate−to−Source Leakage Current I_GSS V_DS = 0 V, V_GS = "4.5 V "2.0 mA ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V_GS(TH) V_GS = V_DS, I_D = −250 mA −0.45 −1.0 V

Negative Threshold

Temperature Coefficient V_GS(TH)/T_J −1.9 mV/°C

Drain−to−Source On Resistance R_DS(on) V_GS = −4.5 V, I_D = −430 mA 0.5 0.9 W

VGS = −2.5 V, ID = −300 mA 0.6 1.2 VGS = −1.8 V, ID = −150 mA 1.0 2.0

Forward Transconductance gFS VDS = −10 V, ID = −430 mA 1.0 S

CHARGES AND CAPACITANCES

Input Capacitance CISS

V_GS = 0 V, f = 1.0 MHz, V_DS = −16 V

105 175 pF

Output Capacitance COSS 15 30

Reverse Transfer Capacitance CRSS 10 20

Total Gate Charge QG(TOT)

V_GS = −4.5 V, V_DS = −10 V, ID = −215 mA

1.7 2.5 nC

Threshold Gate Charge Q_G(TH) 0.1

Gate−to−Source Charge Q_GS 0.3

Gate−to−Drain Charge Q_GD 0.4

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time t_d(on)

VGS = −4.5 V, VDD = −10 V, I_D = −215 mA, R_G = 10 W

10 ns

Rise Time t_r 12

Turn−Off Delay Time t_d(off) 35

Fall Time t_f 19

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V_SD V_GS = 0 V,

I_S = −350 mA T_J = 25°C −0.8 −1.2 V

Reverse Recovery Time tRR V_GS = 0 V, dI_SD/dt = 100 A/ms,

I_S = −350 mA 13 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

TYPICAL PERFORMANCE CURVES

−1 V

100°C 0

1

5 0.6

6 3

2

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−ID,DRAIN CURRENT (AMPS) 0.4

0.2 0

1

Figure 1. On−Region Characteristics

0.5 1

2

1.5 2.5

0.8

0.4 0.2

0 1 0

Figure 2. Transfer Characteristics

−V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.5

3 5

0.7

0.6

0.4

Figure 3. On−Resistance vs. Gate−to−Source Voltage

−V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)

RDS(on),DRAIN−TO−SOURCE RESISTANCE (W) −ID,DRAIN CURRENT (AMPS)

0.1 1.0

0.8

Figure 4. On−Resistance vs. Drain Current and Gate Voltage

−I_D, DRAIN CURRENT (AMPS)

1.4 1.2

1

T_J = 25°C

2 4

T_J = −55°C

I_D = −0.43 A T_J = 25°C

1.4

0.5

TJ = 25°C

I_D = −0.43 A V_GS = −4.5 V

DRAIN−TO−SOURCE ANCE (NORMALIZED)

4

25°C

RDS(on),DRAIN−TO−SOURCE RESISTANCE (W)

1.6

V_GS = −1.8 V

−1.2 V

1 6

−1.4 V

−1.6 V

1.3

0.6 1.1

VGS = −2.5 V

7 10

V_DS ≥ −10 V

0.8

0.2 0.3 0.4 0.9

V_GS = −1.8 V VGS = −2 V

V_GS = 0 V

−IDSS, LEAKAGE (nA)

T_J = 150°C

T_J = 100°C 100

1000 10000 0.45

0.65

0.55 0.75

0.7 1.0 1.2

0.5 0.6 0.7 0.8 0.9 0.8

8 9

0.6

NTZD3152P

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TYPICAL PERFORMANCE CURVES

V_GS = 0 V

−V_GS

5 10

150

100

50 0

20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

0 1 2

4

1 0

Q_G, TOTAL GATE CHARGE (nC)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C

C_OSS C_ISS

C_RSS I_D = −0.215 A

TJ = 25°C 250

1.8 1.6 2

3

−VDS,DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10

8

2

0 QGD

10 1

10

1

100 RG, GATE RESISTANCE (W)

t, TIME (ns)

V_DD = −10 V I_D = −0.215 A V_GS = −4.5 V 100

0 200

5

4 6

t_d(off)

t_d(on) t_f t_r

−V_DS

15 0.2 1.2 1.4

0.9 0.2

0

−V_SD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−IS, SOURCE CURRENT (AMPS)

V_GS = 0 V T_J = 25°C 0.6

0.7 0.5

0.3 0.4

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0.4 0.6 0.8

QT

0.8 0.6

0.4

9

3 1 5 7

Q_GS

Figure 11. Safe Operating Area

−V_DS, DRAIN−TO−SOURCE VOLTAGE (V) 100 10

1 0.0010.1

0.1 1 10

−ID, DRAIN CURRENT (A)

R_DS(on) Limit Thermal Limit Package Limit

dc 100 ms 10 ms V_GS ≤ 6 V

Single Pulse T_C = 25°C

0.01

SOT−563, 6 LEAD CASE 463A

ISSUE H

DATE 26 JAN 2021 SCALE 4:1

1 6

SOT−563, 6 LEAD CASE 463A

ISSUE H

DATE 26 JAN 2021

XX = Specific Device Code M = Month Code G = Pb−Free Package

XX MG GENERIC MARKING DIAGRAM*

1

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

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