NTMFS08N2D5C MOSFET – Power Trench, N‐Channel, Shielded Gate

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MOSFET – Power Trench, N‐Channel, Shielded Gate

80 V, 166 A, 2.7 mW

General Description

T h i s N - C h a n n e l M V M O S F E T i s p r o d u c e d u s i n g ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

• Shielded Gate MOSFET Technology

• ^{Max R}

DS(on)

= 2.7 m W at V

_GS

= 10 V, I

_D

= 68 A

• ^{Max R}

DS(on)

= 8 m W at V

_GS

= 6 V, I

_D

= 34 A

• 50% Lower Qrr than Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Primary DC−DC MOSFET

• Synchronous Rectifier in DC−DC and AC−DC

• Motor Drive

• Solar

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol Parameter Value Unit

V_DS Drain to Source Voltage 80 V

V_GS Gate to Source Voltage ±20 V

I_D Drain Current:

Continuous, TC = 25°C (Note 5) Continuous, T_C= 100°C (Note 5) Continuous, T_A= 25°C (Note 1a) Pulsed (Note 4)

166105 82324

A

EAS Single Pulse Avalanche Energy

(Note 3) 600 mJ

P_D Power Dissipation:

T_C = 25°C

TA = 25°C (Note 1a) 138

2.7

W

T_J, T_STG Operating and Storage Junction −55 to +150 °C

www.onsemi.com

Power 56 (PQFN8) CASE 483AF

Pin 1

Top Bottom

S (1, 2, 3)

D (5, 6, 7, 8) G (4)

N-CHANNEL MOSFET

MARKING DIAGRAM

$Y&Z&3&K NTMFS 08N2D5C

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

NTMFS08N2D5C = Specific Device Code

V_DS R_DS(ON) MAX I_D MAX

80 V 2.7 mW @ 10 V 166 A

8 mW @ 6 V

D D D D S

S S G

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THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case 0.9 °C/W

R_qJA Thermal Resistance, Junction to Ambient (Note 1a) 45

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage I_D = 250mA, VGS = 0 V 80 V

DBVDSS

/DTJ

Breakdown Voltage Temperature

Coefficient ID = 250mA, referenced to 25°C 62 mV/°C

I_DSS Zero Gate Voltage Drain Current V_DS = 64 V, V_GS= 0 V 1 mA

I_GSS Gate to Source Leakage Current V_GS = ±20 V, VDS = 0 V 100 nA

ON CHARACTERISTICS

V_GS(th) Gate to Source Threshold Voltage V_GS = V_DS, I_D = 380mA 2.0 2.9 4.0 V DVGS(th)

/DT_J Gate to Source Threshold Voltage

Temperature Coefficient I_D = 380mA, referenced to 25°C −8.3 mV/°C

r_DS(on) Static Drain to Source On Resistance V_GS = 10 V, I_D = 68 A 2.2 2.7 mW

VGS = 6 V, ID = 34 A 3.3 8

VGS = 10 V, ID = 68 A, TJ = 125°C 3.7 5.4

gFS Forward Transconductance VDS = 5 V, ID = 68 A 148 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance V_DS = 40 V, V_GS = 0 V, f = 1 MHz 4455 7500 pF

Coss Output Capacitance 1480 2485 pF

Crss Reverse Transfer Capacitance 59 105 pF

Rg Gate Resistance 0.8 1.6 W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD = 40 V, ID = 68 A, VGS = 10 V,

R_GEN = 6 W 21 34 ns

t_r Rise Time 11 20 ns

t_d(off) Turn-Off Delay Time 29 47 ns

t_f Fall Time 7 13 ns

Qg Total Gate Charge V_GS = 0 V to 10 V, V_DD = 40 V,

I_D = 68 A 60 100 nC

V_GS = 0 V to 6 V, V_DD = 40 V,

ID = 68 A 38 65 nC

Q_gs Gate to Source Charge V_DD = 40 V, I_D = 68 A 19 nC

Q_gd Gate to Drain “Miller” Charge V_DD = 40 V, I_D = 68 A 12 nC

Q_oss Output Charge V_DD = 40 V, V_GS = 0 V 84 nC

Q_sync Total Gate Charge Sync V_DS = 0 V, I_D = 68 A 51 nC

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ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)(continued)

Symbol Parameter Test Condition Min Typ Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS

V_SD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.2 A (Note 2) 0.7 1.2 V VGS = 0 V, IS = 68 A (Note 2) 0.8 1.3

trr Reverse Recovery Time IF = 34 A, di/dt = 300 A/ms 30 48 ns

Qrr Reverse Recovery Charge 55 88 nC

t_rr Reverse Recovery Time I_F = 34 A, di/dt = 1000 A/ms 24 39 ns

Q_rr Reverse Recovery Charge 139 222 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R_qJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R_qCAis determined by the user’s board design.

NOTES:

G DF DS SF SS G DF DS SF SS

45°C/W when mounted on

a 1 in² pad of 2 oz copper. 115°C/W when mounted on a minimum pad of 2 oz copper.

a) b)

2. Pulse Test: Pulse Width < 300ms, Duty cycle < 2.0%.

3. EAS of 600 mJ is based on starting TJ = 25°C; N-ch: L = 3 mH, IAS = 20 A, VDD = 80 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 63 A.

4. Pulsed Id please refer to Figure 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &

electro-mechanical application board design.

ORDERING INFORMATION

Device Marking Package Reel Size Tape Width Quantity

NTMFS08N2D5C NTMFS08N2D5C Power 56 (PQFN8)

(Pb-Free / Halogen Free) 13″ 12 mm 3000

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TYPICAL CHARACTERISTICS

(T_J = 25°C unless otherwise noted)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage

Figure 3. Normalized On-Resistance vs.

Junction Temperature

Figure 4. On-Resistance vs. Gate to Source Voltage

00 50 100 150 200 250 300

V_GS = 4.5 V V_GS = 5.5 V

V_GS = 10 V

V_GS = 6 V

PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX V_GS = 5 V

V_GS = 7 V

ID, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

1 2 3 4 5 00

1 2 3 4 5 6

V_GS = 10 V V_GS = 7 V

V_GS = 4.5 V

V_GS = 5.5 V PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

V_GS = 6 V V_GS = 5 V

50 100 150 200 250 300

0.6−75 0.8 1.0 1.2 1.4 1.6 1.8 2.0

ID = 68 A V_GS = 10 V

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

TJ, JUNCTION TEMPERATURE (5C)

−50 −25 0 25 50 75 100 125 150

02 50 100 150 200 250 300

T_J = 150^oC VDS= 5 V

PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX

TJ = −55^oC TJ = 25^oC ID, DRAIN CURRENT (A)

V , GATE TO SOURCE VOLTAGE (V)

3 4 5 6 7 0.0010.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01 0.1 1 10 100 300

T_J = −55ôC T_J = 25ôC T_J= 150ôC

VGS= 0 V

IS, REVERSE DRAIN CURRENT (A)

V , BODY DIODE FORWARD VOLTAGE (V) 04

5 10 15 20

TJ= 125^oC ID= 68 A

TJ= 25^oC

VGS, GATE TO SOURCE VOLTAGE (V)

rDS(on),DRAIN TO SOURCE ON−RESISTANCE(mW) PULSE DURATION = 80_ms

DUTY CYCLE = 0.5% MAX

5 6 7 8 9 10

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TYPICAL CHARACTERISTICS

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage

Figure 9. Unclamped Inductive

Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature

0 10 20 30 40 50 60 70

0 2 4 6 8 10

ID= 68 A

VDD = 50 V VDD= 40 V

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC) VDD = 30 V

0.1 1 10 80

1 10 100 1000 10000

f = 1 MHz VGS = 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V) Crss

Coss

Ciss

0.001 0.01 0.1 1 10 100 1000

1 10 100

T_J= 125^oC T_J= 25^oC

TJ= 100^oC

t_AV, TIME IN AVALANCHE (ms) IAS, AVALANCHE CURRENT (A)

025 30 60 90 120 150 180

VGS= 6 V

RqJC= 0.9^oC/W VGS= 10 V

ID,DRAIN CURRENT (A)

T_C, CASE TEMPERATURE (5C)

50 75 100 125 150

0.1 1 10 100 500

0.1 1 10 100 1000

CURVE BENT TO MEASURED DATA

10ms

100 ms/DC 10 ms 1 ms 100ms

VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS

LIMITED BY r_DS(on) SINGLE PULSE T_J= MAX RATED R_qJC= 0.9^oC/W T_C= 25^oC

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 1 10

100 1000 10000 100000

SINGLE PULSE R_qJC= 0.9^oC/W TC= 25^oC

P( PK

),PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

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TYPICAL CHARACTERISTICS

Figure 13. Junction-to-Case Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 1

0.001 0.01 0.1 1 2

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec) D = 0.5

0.2 0.1 0.05 0.02 0.01

NOTES:

Z_qJC(t) = r(t) x R_qJC R_qJC = 0.9^oC/W Duty Cycle, D = t₁ / t₂ Peak T_J = P_DM x Z_qJC(t) + T_C

P_DM

t₁ t₂

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PQFN8 5X6, 1.27P CASE 483AF

ISSUE A

DATE 06 JUL 2021

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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

NTMFS08N2D5C MOSFET – Power Trench, N‐Channel, Shielded Gate

MOSFET – Power Trench, N‐Channel, Shielded Gate

80 V, 166 A, 2.7 mW

• Shielded Gate MOSFET Technology

• Max R

= 2.7 m W at V

= 10 V, I

= 68 A

• Max R

= 8 m W at V

= 6 V, I

= 34 A

• 50% Lower Qrr than Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

• Primary DC−DC MOSFET

• Synchronous Rectifier in DC−DC and AC−DC

• Motor Drive

• Solar

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

• ^{Max R}

• ^{Max R}