MOSFET – P-Channel, POWERTRENCH)

MOSFET – P-Channel, POWERTRENCH ⁾

-100 V, -50 A, 22 mW

FDMS86163P

General Description

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.

Features

• ^{Max r}

= 22 m W at V

= −10 V, I

= −7.9 A

• ^{Max r}

= 30 m W at V

= −6 V, I

= −5.9 A

• Very Low RDS−on Mid Voltage P−Channel Silicon Technology Optimised for Low Qg

• This Product is Optimised for Fast Switching Applications As Well As Load Switch Applications

• 100% UIL Tested

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant

Applications

• Active Clamp Switch

• Load Switch

MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Parameter Symbol Value Unit

Drain−to−Source Voltage V_DS −100 V

Gate−to−Source Voltage V_GS ±25 V

Drain Current −Continuous T_C = 25°C

−Continuous T_A = 25°C (Note 1a)

−Pulsed (Note 4)

I_D −50

−7.9

−100 A

Single Pulse Avalanche Energy (Note 3) E_AS 486 mJ Power Dissipation T_C = 25°C

T_A = 25°C (Note1a)

P_D 104

2.5 W Operating and Storage Junction Temperature

Range T_J, T_STG −55 to

+150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

PQFN8 CASE 483AE

MARKING DIAGRAM

$Y&Z&3&K FDMS 86163P

$Y = onsemi Logo

&Z = Assembly Location

&3 = 3−Digit Date Code

&K = Lot Code

FDMS86163P = Specific Device Code

PIN CONNECTION

1 2 3

4 5

6 7 S 8

S S G

D D D D

Device Package Shipping^† ORDERING INFORMATION

FDMS86163P PQFN−8

(Pb−Free) 3000 / Tape & Reel

SS S G DD

Power 56 D D

BV_DSS R_DS(ON) MAX I_D MAX

−100 V 22 mW @ −10 V −50 A

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification

Pin 1

Top Bottom

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case 1.2 °C/W

R_qJA Thermal Resistance Junction to Ambient (Note 1a) 50

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage I_D = −250 mA, VGS = 0 V −100 − − V DBVDSS/

DT_J Breakdown Voltage Temperature

Coefficient I_D = −250 mA, Referenced to 25°C − −59 − mV/°C

I_DSS Zero Gate Voltage Drain Current V_DS = −80 V, V_GS = 0 V − − −1 mA

I_GSS Gate to Source Leakage Current V_GS = ±25 V, VDS = 0 V − − ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate to Source Threshold Voltage V_GS = V_DS, I_D = −250 mA −2 −2.8 −4 V DV_GS(th)/

DTJ

Gate to Source Threshold Voltage

Temperature Coefficient I_D = −250 mA, Referenced to 25°C − 6.2 − mV/°C rDS(on) Static Drain to Source On Resistance VGS = −10 V, ID = −7.9 A − 17.8 22 mW

VGS = −6 V, ID = −5.9 A − 21.3 30

VGS = −10 V, ID = −7.9 A, TJ = 125°C − 29 36

g_FS Forward Transconductance V_DS = −10 V, I_D = −7.9 A − 29 − S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance VDS = −50 V, VGS = 0 V, f = 1 MHz − 3070 4085 pF

C_oss Output Capacitance − 501 670

C_rss Reverse Transfer Capacitance − 21 35

R_g Gate Resistance 0.1 2.6 5.3 W

SWITCHING CHARACTERISTICS

t_d(on) Turn−On Delay V_DD = −50 V, I_D = −7.9 A,

V_GS = −10 V, R_GEN = 6 W − 17 30 ns

t_r Rise Time − 8.8 18

t_d(off) Turn−Off Delay − 33 53

t_f Fall Time − 6.9 14

Q_g Total Gate Charge V_GS = 0 V to −10 V V_DD = −50 V, I_D = −7.9 A

− 42 59 nC

Q_g Total Gate Charge V_GS = 0 V to −6 V − 26 37

Q_gs Gate to Source Gate Charge V_DD = −50 V, I_D = −7.9 A − 11.8 −

Q_gd Gate to Drain “Miller” Charge − 7.1 −

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified) (continued)

Symbol Parameter Conditions Min Typ Max Unit

DRAIN−SOURCE DIODE CHARACTERISTICS V_SD Source to Drain Diode Forward

Voltage VGS = 0 V, IS = −7.9 A (Note 2) − −0.81 −1.3 V

VGS = 0 V, IS = −2 A (Note 2) − −0.75 −1.2

trr Reverse Recovery Time IF = −7.9 A, di/dt = 100 A/ms − 63 102 ns

Qrr Reverse Recovery Charge − 132 210 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R_qJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R_qJC is guaranteed by design while R_qCA is determined by the user’s board design.

G DF DS SF SS

G DF DS SF SS

a) 50°C/W when mounted on a 1 in² pad of 2 oz copper

b) 50°C/W when mounted on a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. Starting T_J = 25°C; P−ch: L = 3 mH, IAS = −18 A, V_DD = −100 V, V_GS = −10 V. 100% test at L = 0.1 mH, I_AS = −58 A.

4. Pulse Id refers to Figure 11. Forward Bias Safe Operation Area.

TYPICAL CHARACTERISTICS

Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage

Figure 3. Normalized On Resistance vs. Junction Temperature

0 1 2 3 4 5

0 20 40 60 80 100

−ID, DRAIN CURRENT (A)

−V_DS, DRAIN TO SOURCE VOLTAGE (V) V_GS = −10 V VGS = −6 V

V_GS = −5.5 V

V_GS = −5 V

V_GS = −4.5 V

0 20 40 60 80 100

4

3

2

1

0

V_GS = −10 V VGS = −6 V VGS = −5.5 V V_GS = −5 V V_GS = −4.5 V

−ID, DRAIN CURRENT (A)

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

T_J, JUNCTION TEMPERATURE (°C)

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

−75 −50 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

−25 0 25 50 75 100 125 150

I_D = −7.9 A V_GS = −10 V

−VGS, GATE TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW)

8

4 7 9 10

3 5 6

80

60

40

20

0

ID = −7.9 A T_J = 125°C

T_J = 25°C

Figure 4. On−Resistance vs. Gate to Source Voltage

0 20 40 60 80 100

2 3 4 5 6 7

−V_GS, GATE TO SOURCE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

Figure 5. Transfer Characteristics PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% Max VDS = −5 V

T_J = 150°C

T_J = 25°C T_J = −55°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001 0.01 0.1 1 10 100

V_GS = 0 V

T_J = 150°C

T_J = 25°C

T_J = −55°C

−VSD, BODY DIODE FORWARD VOLTAGE (V)

−IS, REVERSE DRAIN CURRENT (A)

Figure 6. Source to Drain Diode Forward Voltage vs. Source Current

PULSE DURATION = 80 ms DUTY CYCLE = 0.5% Max PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% Max PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% Max

TYPICAL CHARACTERISTICS

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage

Figure 9. Unclamped Inductive Switching Capability

Figure 10. Maximum Continuous Drain Current vs. Case Temperature

TC, CASE TEMPERATURE (°C)

−V_DS, DRAIN TO SOURCE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

−ID, DRAIN CURRENT (A) K), PEAK TRANSIENT POWER (W)

25 50 75 100 125 150

10 ms

10 ms

0 10 20 30 40 50

0 2 4 6 8 10

I_D = −7.9 A V_DD = −50 V

V_DD = −75 V V_DD = −25 V

Q_g, GATE CHARGE (nC)

−VGS, GATE TO SOURCE VOLTAGE (V)

0.1 1 10 100

10 100 1000 10000

CAPACITANCE (pF)

f = 1 MHz VGS = 0 V

C_rss C_oss C_iss

1 10 100

0.001 0.01 0.1 1 10 100 1000

T_J = 25°C

T_J = 100°C

T_J = 125°C

tAV, TIME IN AVALANCHE (ms)

−IAS, AVALANCHE CURRENT A)

0 10 20 30 40 50 60

V_GS = −10 V V_GS = −6 V

R_qJC = 1.2°C/W

1 10 100 500

CURVE BENT TO MEASURED DATA

DC 100 ms

1 ms THIS AREA IS

LIMITED BY r_DS(on) SINGLE PULSE T_J = MAX RATED R_qJC = 1.2°C/W

T = 25°C 100

1000 10000 20000

,

SINGLE PULSE R_qJC = 1.2°C/W T_C = 25°C

TYPICAL CHARACTERISTICS

t, RECTANGULAR PULSE DURATION (s)

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

0.005 0.01 0.1 1 2

DUTY CYCLE−DESCENDING ORDER

SINGLE PULSE

PDM

t₁ t2

10⁻⁵ 10⁻⁴ 10−³ 10−² 10−¹ 1

Figure 13. Junction−to−Case Transient Thermal Response Curve D = 0.50

0.20 0.10 0.05 0.02 0.01

NOTES:

DUTY FACTOR: D = t1/t2

PEAK T_J = P_DM x Z_qJC x R_qJC + T_C

PQFN8 5X6, 1.27P CASE 483AE

ISSUE C

DATE 21 JAN 2022

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.