FDZ192NZ Power MOSFET, N-Channel, Trench

Power MOSFET, N-Channel, Trench ⁾ , 1.5 V Specified Thin WLCSP

20 V, 5.3 A, 39 m W

General Description

Designed on advanced 1.5 V PowerTrench

process with state of the art “fine pitch” WLCSP packaging process, the FDZ192NZ minimizes both PCB space and r

. This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra−low profile packaging, low gate charge, and low r

.

Features

• ^{Max r}

= 39 m at V

= 4.5 V, I

= 2.0 A

• Max r

= 43 m at V

= 2.5 V, I

= 2.0 A

• ^{Max r}

= 49 m at V

= 1.8 V, I

= 1.0 A

• ^{Max r}

= 55 m at V

= 1.5 V, I

= 1.0 A

• Occupies only 1.5 mm

of PCB Area. Less than 50% of the Area of 2 x 2 BGA

• Ultra−thin Package: Less than 0.65 mm Height when Mounted to

• PCB HBM ESD Protection Level > 2200 V (Note 3)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Battery Management

• Load Switch

• Battery Protection

www.onsemi.com

WLCSP6 1.5x1x0.6 CASE 567PW

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION MARKING DIAGRAM

SCHEMATIC

1

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&2 = Numeric Date Code

&K = Lot Code

8 = Specific Device Code

$Y&Z&2&K 8

BOTTOM TOP

G S D

S S D

PIN1

ORDERING INFORMATION

Part Number Device Marking Package Shipping^†

FDZ192NZ 8 WLCSP6 1.5x1x0.6

(Pb-Free / Halogen Free) 5000 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol Parameter Value Unit

V_DS Drain to Source Voltage 20 V

V_GS Gate to Source Voltage ±8 V

I_D Drain Current Continuous, T_A = 25°C (Note 1a) 5.3 A

Drain Current Pulsed 15

P_D Power Dissipation, T_A = 25°C (Note 1a) 1.9 W

Power Dissipation, T_A = 25°C (Note 1b) 0.9

T_J, T_STG Operating and Storage Junction Temperature Range −55 to 150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_JA Thermal Resistance, Junction to Ambient (Note 1a) 65 °C/W

R_JA Thermal Resistance, Junction to Ambient (Note 1b) 133 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

Off Characteristics

BV_DSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V 20 V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25°C 10 mV/°C

I_DSS Zero Gate Voltage Drain Current V_DS = 16 V, V_GS = 0 V 1 A

I_GSS Gate to Source Leakage Current V_GS = ±8 V, V_DS = 0 V ±10 A

On Characteristics

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A 0.4 0.7 1.0 V

ΔVGS(th)

ΔTJ Gate to Source Threshold Voltage Temperature

Coefficient ID = 250 A, referenced to 25°C −3 mV/°C

rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 2.0 A 26 39 mΩ

VGS = 2.5 V, ID = 2.0 A 29 43

VGS = 1.8 V, ID = 1.0 A 33 49

VGS = 1.5 V, ID = 1.0 A 38 55

VGS = 4.5 V, ID = 2.0 A, TJ = 125°C 31 47

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)(continued)

Symbol Parameter Test Conditions Min Typ Max Unit

Switching Characteristics td(on) Turn−On Delay Time

VDD = 10 V, ID = 5.3 A, VGS = 4.5 V, RGEN = 6 Ω

6.5 13 ns

tr Rise Time 4 10 ns

td(off) Turn−Off Delay Time 50 80 ns

tf Fall Time 20 32 ns

Qg Total Gate Charge VGS = 0 V to 4.5 V

VDD = 10 V, ID = 5.3 A

12 17 nC

Qgs Gate to Source Charge 1.3 nC

Qgd Gate to Drain “Miller” Charge 2.3 nC

Drain−Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.1 A (Note 2) 0.6 1.2 V

trr Reverse Recovery Time IF = 5.3 A, di/dt = 100 A/s 18 32 ns

Qrr Reverse Recovery Charge 4.6 10 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. R_JA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R_JC is guaranteed by design while R_CA is determined by the user’s board design.

a.) 65°C/W when mounted on a

1 in² pad of 2 oz copper b.) 133°C/W when mounted on a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.

3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

TYPICAL CHARACTERISTICS

(T_J = 25°C unless otherwise noted)

Figure 1. On−Region Characteristics

0.0 0.2 0.4 0.6 0.8 1.0

0 3 6 9 12 15

V_GS = 3 V

V_GS = 1.8 V V_GS = 2.5 V

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX V_GS = 1.5 V

V_GS = 4.5 V

ID, DRAIN CURRENT (A)

V_DS,DRAIN TO SOURCE VOLTAGE (V)

Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage

0 3 6 9 12 15

0.5 1.0 1.5 2.0 2.5

V_GS = 1.8 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

ID,DRAIN CURRENT (A) V_GS= 2.5 V V_GS = 3 V V_GS =1.5 V

V_GS= 4.5 V

Figure 3. Normalized On−Resistance vs Junction Temperature

−75 −50 −25 0 25 50 75 100 125 150 0.6

0.8 1.0 1.2 1.4

1.6 ID = 2 A V_GS = 4.5 V

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

TJ,JUNCTION TEMPERATURE(^oC)

Figure 4. On−Resistance vs Gate to Source Voltage 00.5

20 40 60 80 100

T_J= 125^oC ID= 2 A

TJ= 25^oC

VGS,GATE TO SOURCE VOLTAGE (V)

rDS(on),DRAIN TO SOURCE ON−RESISTANCE(mΩ) PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Figure 5. Transfer Characteristics

0.6 0.8 1.0 1.2 1.4 1.6

0 3 6 9 12 15

T_J = 150^oC VDS= 5 V

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

TJ = −55^oC TJ = 25^oC ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6. Source to Drain Diode Forward Voltage vs

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001 0.01 0.1 1 10 20

TJ = −55^oC TJ = 25 ^oC T_J= 150^oC

VGS= 0 V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

TYPICAL CHARACTERISTICS

(T_J = 25°C unless otherwise noted)

Figure 7. Gate Charge Characteristics

0 3 6 9 12 15

0.0 0.9 1.8 2.7 3.6 4.5

ID= 5.3 A

VDD = 12 V VDD= 10 V

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC) VDD = 8 V

Figure 8. Capacitance vs Drain to Source Voltage

0.01 0.1 1 10

50 100 1000

f = 1 MHz VGS = 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss

20 2000

Figure 9. Gate Leakage Current vs Gate to Source Voltage

0 3 6 9 12 15

10⁻⁹ 10⁻⁸ 10⁻⁷ 10⁻⁶ 10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹

V_DS= 0 V

TJ= 25^oC T_J= 125 ^oC

VGS,GATE TO SOURCE VOLTAGE (V) Ig,GATE LEAKAGE CURRENT (A)

Figure 10. Forward Bias Safe Operating Area

0.1 1 10 50

0.01 0.1 1 10 20

10 ms 100 ms

DC 1 s 10 s 1 ms

ID, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS

LIMITED BY r_DS(on) SINGLE PULSE TJ= MAX RATED R_JA= 133 ^oC/W T_A= 25^oC

Figure 11. Single Pulse Maximum Power Dissipation

10⁻³ 10⁻² 10⁻¹ 1 10 1000

1 10 100

P(PK), PEAK TRANSIENT POWER (W)

SINGLE PULSE R_JA = 133^oC/W T_A = 25^oC

t, PULSE WIDTH (sec)

TYPICAL CHARACTERISTICS

(T_J = 25°C unless otherwise noted)

Figure 12. Junction−to−Ambient Transient Thermal Response Curve

10⁻³ 10⁻² 10⁻¹ 1 10 100 1000

0.01 0.1 1 2

SINGLE PULSE R_JA = 133^oC/W DUTY CYCLE−DESCENDING ORDER

NORMALIZED THERMAL IMPEDANCE,ZJA

t, RECTANGULAR PULSE DURATION (sec) D = 0.5

0.2 0.1 0.05 0.02 0.01

P_DM

t₁ t₂ NOTES:

DUTY FACTOR: D = t₁/t₂ PEAK T_J = P_DM x Z_JA x R_JA + T_A

WLCSP6 1.5x1x0.6 CASE 567PW

ISSUE A

DATE 04 AUG 2021

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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems