NTTFS4C06N MOSFET – Power, Single, N-Channel, m8FL

MOSFET – Power, Single, N-Channel, m 8FL

30 V, 67 A

Features

• ^{Low R}

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 30 V

Gate−to−Source Voltage V_GS ±20 V

Continuous Drain Current R_qJA (Note 1)

Steady State

T_A = 25°C I_D 18 A

T_A = 85°C 13

Power Dissipation R_qJA

(Note 1) TA = 25°C PD 2.16 W

Continuous Drain Current R_qJA ≤ 10 s (Note 1)

T_A = 25°C I_D 25.6 A

TA = 85°C 18.5

Power Dissipation

R_qJA≤ 10 s (Note 1) T_A = 25°C P_D 4.4 W

Continuous Drain

Current R_qJA (Note 2) TA = 25°C I_D 11 A

TA = 85°C 8

Power Dissipation

R_qJA (Note 2) T_A = 25°C P_D 0.81 W

Continuous Drain

Current R_qJC (Note 1) T_C = 25°C ID 67 A

TC = 85°C 49

Power Dissipation

R_qJC (Note 1) T_C = 25°C P_D 31 W

Pulsed Drain Current TA = 25°C, tp = 10 ms I_DM 166 A Operating Junction and Storage Temperature TJ,

T_stg −55 to

+150 °C

Source Current (Body Diode) I_S 28 A

Drain to Source dV/dt dV/dt 7 V/ns

Single Pulse Drain−to−Source Avalanche Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V, I_L = 37 A_pk, L = 0.1 mH, R_G = 25 W) (Note 3)

E_AS 68 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) TL 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

ORDERING INFORMATION http://onsemi.com

Device Package Shipping^† V_(BR)DSS R_DS(on) MAX I_D MAX

30 V 4.2 mW @ 10 V

67 A

N−Channel MOSFET D (5−8)

S (1,2,3) G (4)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

WDFN8 (m8FL) CASE 511AB

MARKING DIAGRAM 6.1 mW @ 4.5 V

NTTFS4C06NTAG WDFN8

(Pb−Free) 1500 / Tape &

Reel (Note: Microdot may be in either location)

1

4C06 = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

1

NTTFS4C06NTWG WDFN8

(Pb−Free) 5000 / Tape &

Reel 4C06 AYWWG

G

D D DD S

S SG

http://onsemi.com 2

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C, V_GS = 10 V, I_L = 20 A, E_AS = 20 mJ.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain) R_qJC 4.1

Junction−to−Ambient – Steady State (Note 4) R_qJA 58 °C/W

Junction−to−Ambient – Steady State (Note 5) R_qJA 154.3

Junction−to−Ambient – (t ≤ 10 s) (Note 4) R_qJA 28.3

4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

5. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS V_GS = 0 V, I_D = 250 mA 30 V

Drain−to−Source Breakdown Voltage

(transient) V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A,

T_case = 25°C, ttransient = 100 ns 34 V Drain−to−Source Breakdown Voltage

Temperature Coefficient V_(BR)DSS/

T_J 14.4 mV/°C

Zero Gate Voltage Drain Current I_DSS V_GS = 0 V,

VDS = 24 V T_J = 25°C 1.0

mA

T_J = 125°C 10

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS(TH) V_GS = V_DS, I_D = 250 mA 1.3 2.2 V

Negative Threshold Temperature Coefficient VGS(TH)/TJ 3.8 mV/°C

Drain−to−Source On Resistance R_DS(on) VGS = 10 V ID = 30 A 3.4 4.2

VGS = 4.5 V ID = 30 A 4.9 6.1 mW

Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 58 S

Gate Resistance RG TA = 25°C 1.0 W

CHARGES AND CAPACITANCES

Input Capacitance CISS

V_GS = 0 V, f = 1 MHz, V_DS = 15 V

1683 3366

Output Capacitance COSS 841 1682 pF

Reverse Transfer Capacitance C_RSS 40

Capacitance Ratio C_RSS/C_ISS V_GS = 0 V, V_DS = 15 V, f = 1 MHz 0.023

Total Gate Charge Q_G(TOT)

V_GS = 4.5 V, V_DS = 15 V; I_D = 30 A

11.6 16.2

Threshold Gate Charge Q_G(TH) 2.6 3.6 nC

Gate−to−Source Charge Q_GS 4.7 6.6

Gate−to−Drain Charge Q_GD 4.0 5.6

Gate Plateau Voltage V_GP 3.1 V

Total Gate Charge Q_G(TOT) V_GS = 10 V, V_DS = 15 V; I_D = 30 A 26 36 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

SWITCHING CHARACTERISTICS (Note 7)

Turn−On Delay Time td(ON)

V_GS = 4.5 V, V_DS = 15 V, ID = 15 A, RG = 3.0 W

10

Rise Time tr 32 ns

Turn−Off Delay Time td(OFF) 18

Fall Time tf 5.0

Turn−On Delay Time t_d(ON)

V_GS = 10 V, V_DS = 15 V, I_D = 15 A, R_G = 3.0 W

8.0

Rise Time t_r 28 ns

Turn−Off Delay Time t_d(OFF) 24

Fall Time t_f 3.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

I_S = 10 A

T_J = 25°C 0.8 1.1

T_J = 125°C 0.63 V

Reverse Recovery Time t_RR

V_GS = 0 V, dIS/dt = 100 A/ms, I_S = 30 A

34

Charge Time t_a 17 ns

Discharge Time t_b 17

Reverse Recovery Charge Q_RR 22 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.

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TYPICAL CHARACTERISTICS

10 100 1000 10000

5 10 15 20 25 30

0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7

−50 −25 0 25 50 75 100 125 150

0.0010 0.0015 0.0020 0.0025 0.0030 0.0035 0.0040 0.0045 0.0050 0.0055 0.0060

10 20 30 40 50 60 70

0 10 20 30 40 50 60

0 0.5 1 1.5 2 2.5 3

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, DRAIN−TO−SOURCE VOLTAGE (V) V_GS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. V_GS Figure 4. On−Resistance vs. Drain Current and Gate Voltage

V_GS, GATE−TO−SOURCE VOLTAGE (V) I_D, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage

T_J, JUNCTION TEMPERATURE (°C) V_DS, DRAIN−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) IDSS, LEAKAGE (nA)

3.6 V 3.2 V

3.0 V

2.8 V

2.4 V

T_J = 25°C VDS = 5 V

T_J = 25°C T_J = 125°C

T_J = −55°C

ID = 30 A

V_GS = 4.5 V

T_J = 25°C

VGS = 10 V

ID = 30 A VGS = 10 V

V_GS = 0 V

TJ = 85°C TJ = 150°C

T_J = 125°C 2.6 V

3.4 V 4.0 V to 10 V

2.2 V

0 10 20 30 40 50 60 70 80

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020

3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

TYPICAL CHARACTERISTICS

0.01 0.1 1 10 100 1000

0.01 0.1 1 10 100

0.4 0.5 0.6 0.7 0.8 0.9 1.0

0 200 400 600 800 1000 1200 1400 1600 1800 2000

0 5 10 15 20 25 30

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) Q_g, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current

R_G, GATE RESISTANCE (W) V_SD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) T_J, STARTING JUNCTION TEMPERATURE (°C)

C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V)

t, TIME (ns) IS, SOURCE CURRENT (A)

ID, DRAIN CURRENT (A) EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ)

VGS = 0 V TJ = 25°C C_iss

C_oss

Crss

V_DD = 15 V I_D = 15 A

V_GS = 10 V td(off)

t_d(on)

t_r

t_f T_J = 25°C

T_J = 125°C VGS = 0 V

0 V < V_GS < 10 V Single Pulse T_C = 25°C RDS(on) Limit Thermal Limit Package Limit

100 ms 10 ms 1 ms

dc

ID = 20 A 10 ms

Q_gs

Q_T

Qgd

T_J = 25°C V_DD = 15 V V_GS = 10 V I_D = 30 A 0 2 4 6 8 10 12 14 16 18 20 22 24 26

1.0 10 100 1000

1 10 100 0

2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10

0 4 8 12 16 20

25 50 75 100 125 15

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TYPICAL CHARACTERISTICS

0 10 20 30 40 50 60 70 80 90 100 110 120 130

0 5 10 15 20 25 30 35 40 45 50 55 60

Figure 13. Thermal Response PULSE TIME (sec)

R(t) (°C/W)

10%

Duty Cycle = 50%

20%

5%

2%

1%

Single Pulse

Figure 14. G_FS vs. I_D I_D (A) GFS (S)

Figure 15. Avalanche Characteristics PULSE WIDTH (SECONDS) ID, DRAIN CURRENT (A)

1 10 100

TA = 25°C T_A = 85°C

0.01 0.1 1 10 100

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100

1.0E−08 1.0E−07 1.0E−06 1.0E−05 1.0E−04 1.E−03

M 1.40 1.50 q 0 _ −−− ^1.6012 _ WDFN8 3.3x3.3, 0.65P

CASE 511AB ISSUE D

DATE 23 APR 2012 SCALE 2:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

1 2 3 4 5 6

TOP VIEW

SIDE VIEW

BOTTOM VIEW D1

E1 q

D

E A B

0.20 C

0.20 C

2X

2X

DIM MIN NOM MILLIMETERS A 0.70 0.75 A1 0.00 −−−

b 0.23 0.30 c 0.15 0.20 D1D 2.95 3.05 D2 1.98 2.11

E

E1 2.95 3.05 E2 1.47 1.60

e 0.65 BSC

G 0.30 0.41 K 0.65 0.80 L 0.30 0.43 L1 0.06 0.13

A 0.10 C

0.10 C

DETAIL A

1 4

8 L1

e/2

8X

G D2 E2

K b

A 0.10 C B 0.05 C

L

DETAIL A

A1

6Xe c

4X

C

SEATING PLANE 1

5

MAX0.80 0.05 0.40 0.25 3.15 2.24 3.15 1.73

0.51 0.95 0.56 0.20

M

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.65 0.42

0.75 2.30

3.46

PACKAGE 8X

0.055 0.059 0 _ −−− ^0.06312 _

0.028 0.030

0.000 −−−

0.009 0.012 0.006 0.008 0.116 0.120 0.078 0.083 0.116 0.120 0.058 0.063 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005

0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068

0.020 0.037 0.022 0.008 MIN NOM

INCHES 7 MAX

8

PITCH

3.60 0.57

0.47

OUTLINE

DIMENSION: MILLIMETERS 3.30 BSC

3.30 BSC

0.130 BSC

0.130 BSC

2.37

0.66^4X

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

XXXXX AYWWG

G 1

E3 0.23 0.30 0.40 0.009 0.012 0.016

E3

4X

98AON30561E DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 WDFN8 3.3X3.3, 0.65P

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910

LITERATURE FULFILLMENT:

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For additional information, please contact your local Sales Representative

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