IGBT - Field Stop, Trench 650 V, 40 A

650 V, 40 A

FGH40T65SPD-F085

Description

Using the novel field stop 3

generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability.

Meanwhile, this part also offers and advantage of outstanding performance in parallel operation.

Features

• Low Saturation Voltage: V

= 1.85 V (Typ.) @ I

= 40 A

• 100% Of The Part Are Dynamically Tested (Note 1)

• Short Circuit Ruggedness > 5 m S @ 25 ° C

• Maximum Junction Temperature: T

= 175°C

• Fast Switching

• Tight Parameter Distribution

• Positive Temperature Co−efficient for Easy Parallel Operating

• Co−Packed With Soft And Fast Recovery Diode

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

• On−board Charger

• Air Conditioner Compressor

• PTC Heater

• Motor Drivers

• Other Automotive Power−Train Applications

www.onsemi.com

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = 3−Digit Data code

&K = 2−Digit Lot Traceability code FGH40T65SPD = Specific Device Code

MARKING DIAGRAM

VCES Eon VCE(Sat)

650 V 1.16 mJ 1.85 V

C

G

E

TO−247−3LD CASE 340CK E C

G

COLLECTOR (FLANGE)

$Y&Z&3&K FGH40T65 SPD

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

Symbol Description Ratings Units

VCES Collector to Emitter Voltage 650 V

V_GES Gate to Emitter Voltage ±20 V

Transient Gate to Emitter Voltage ±30 V

I_C Collector Current @ TC = 25°C 80 A

Collector Current @ TC = 100°C 40

I_CM Pulsed Collector Current (Note 2) 120 A

IF Diode Forward Current @ TC = 25°C 40 A

Diode Forward Current @ TC = 100°C 20

I_FM Pulsed Diode Maximum Forward Current (Note 2) 120 A

PD Maximum Power Dissipation @ T_C = 25°C 267 W

Maximum Power Dissipation @ T_C = 100°C 134

SCWT Short Circuit Withstand Time @ T_C = 25°C 5 ms

T_J Operating Junction Temperature −55 to +175 °C

T_stg Storage Temperature Range −55 to +175 °C

T_L Maximum Lead Temp. For soldering Purposes, ⅛” from case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20W, Inductive Load.

2. Repetitive rating: pulse width limited by max. Junction temperature.

THERMAL CHARACTERISTICS

Symbol Rating Max. Units

R_qJC Thermal Resistance Junction to Case, for IGBT 0.56 _C/W

R_qJC Thermal Resistance Junction to Case, for Diode 1.71 _C/W

R_qJA Thermal Resistance Junction to Ambient 40 _C/W

PACKING MARKING AND ORDERING INFORMATION

Device Marking Device Package Pacing Type Quantity

FGH40T65SPD FGH40T65SPD−F085 TO−247−3LD Tube 30

ELECTRICAL CHARACTERISTICS OF THE IGBT (T_C = 25°C unless otherwise noted)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

OFF CHARACTERISTICS

Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1mA BVCES 650 − − V

Temperature Coefficient of Breakdown

Voltage V_GE = 0 V, I_C = 1mA DBVCES /

DTJ

− 0.6 − V/_C

Collector Cut−off Current V_GE = 0 V, V_CE = V_CES I_CES − 250 mA

G−E Leakage Current V_GE = V_GES, V_CE = 0 V I_GES − − ±400 nA

ON CHARACTERISTICS

ELECTRICAL CHARACTERISTICS OF THE IGBT (T_C = 25°C unless otherwise noted) (continued)(continued)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

DYNAMIC CHARACTERISTICS

Input Capacitance V_CE = 30 V, V_GE = 0 V,

f = 1 MHz C_ies − 1518 − pF

Output Capacitance C_oes − 91 −

Reverse Transfer Capacitance C_res − 15 −

SWITCHING CHARACTERISTICS

Turn−on Delay Time T_C = 25_C

VCC = 400 V, IC = 40 A Rg = 6 W

VGE = 15 V Inductive Load

T_d(on) − 18 − ns

Rise Time T_r − 42 −

Turn−off Delay Time T_d(off) − 35 −

Fall Time T_f − 10 −

Turn−on Switching Loss Eon − 1.16 − mJ

Turn−off Switching Loss E_off − 0.27 −

Total Switching Loss Ets − 1.43 −

Turn−on Delay Time TC = 175_C

V_CC = 400 V, I_C = 40 A Rg = 6 W

V_GE = 15 V Inductive Load

Td(on) − 16 − ns

Rise Time Tr − 40 −

Turn−off Delay Time Td(off) − 37 −

Fall Time Tf − 11 −

Turn−on Switching Loss Eon − 1.59 − mJ

Turn−off Switching Loss E_off − 0.42 −

Total Switching Loss E_ts − 2.01 −

Gate Charge Total VCE = 400 V, IC = 40 V,

V_GE = 15 V Q_g − 36 − nC

Gate to Emitter Charge Q_ge − 11 −

Gate to Collector Charge Q_gc − 12 −

ELECTRICAL CHARACTERISTICS OF THE DIODE (T_C = 25°C unless otherwise noted)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Diode Forward Voltage IF = 20 A T_C = 25_C VFM − 2.2 2.7 V

T_C = 175_C − 1.9 −

Reverse Recovery Energy I_F = 20 A,

dI_F/dt = 200 A/ms T_C = 175_C E_rec − 51 − mJ

Diode Reverse Recovery Time T_C = 25_C T_rr − 35 − ns

T_C = 175_C − 214 −

Diode Reverse Recovery Charge T_C = 25_C Q_rr − 58 − mC

T_C = 175_C − 776 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL PERFORMANCE CHARACTERISTICS

0 1 2 3 4 5 6 0

30 60 90 120

20 V 15 V 12 V

10 V

Collector Current, IC [A]

Collector−Emitter Voltage, VCE [V]

0 30 60 90 120

20V 15 V 12 V 10 V

Collector Current, IC [A]

Collector−Emitter Voltage, VCE [V]

0 30 60 90 120

Collector Current, IC [A]

Collector−Emitter Voltage, VCE [V]

2 4 6 8 10 12 14 16 0

30 60 90 120

Collector Current, IC [A]

Gate−Emitter Voltage,VGE [V]

40 A 80 A

Collector−Emitter Voltage,VCE [V]

1 2 3 4 5

80 A

40 A

Collector−Emitter Voltage, VCE [V]

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Characteristics

Figure 4. Transfer Characteristics T_C = 25°C

V_GE = 8 V

V_GE = 8 V T_C = 175°C

0 1 2 3 4 5 6

0 1 2 3 4 5 6 Common Emitter

VGE = 15 V T_C = 25°C T_C = 175°C

Common Emitter VCE = 20 V T_C = 25°C T_C = 175°C

Common Emitter V_GE = 15 V

IC = 20 A

Common Emitter T_C = −40°C

IC = 20 A 0

4 8 12 16 20

TYPICAL PERFORMANCE CHARACTERISTICS

40 A 80 A

4 8 12 16 20

0 4 8 12 16 20

40 A 80 A

300 V 400 V

Gate−Emitter Voltage, VGE [V]

Gate Charge, Qg [nC]

1 10

10 100 1000 10000

Capacitance [pF]

30

1 10 100 1000

0.1 1 10 100 300

10 ms1 ms

*Notes: DC

10ms 100ms

Collector Current, IC [A]

Collector−Emitter Voltage, VCE [V] 11 10 100 1000

10 100 200

Collector Current, IC [A]

Collector−Emitter Voltage, VCE [V]

Figure 7. Saturation Voltage vs. V_GE Figure 8. Saturation Voltage vs. V_GE

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA Characteristics

I_C = 20 A

Gate−Emitter Voltage, V_GE [V]

Common Emitter T_C = 25°C

Collector−Emitter Voltage, VCE [V]

4 8 12 16 20

0 4 8 12 16 20

Gate−Emitter Voltage, V_GE [V]

Collector−Emitter Voltage, VCE [V]

Common Emitter T_C = 175°C

IC = 20 A

Common Emitter VGE = 0 V, f = 1 MHz T_C = 25°C

Ciss C_iss

C_oss

C_rss

Collector−Emitter Voltage, VCE [V]

VCC = 200 V Common Emitter TC = 25°C

0 10 20 30 40

0 3 6 9 12 15

1. T_C = 25°C 2. T_J = 175°C

3. Single Pulse Safe Operating Area

VGE = 15 V, TC = 175°C

TYPICAL PERFORMANCE CHARACTERISTICS

0 10 20 30 40 50 1

10 100 200

Switching Time [ns] Switching Time [ns]

20 40 60 80

5 10 100 200

Switching Time [ns]

20 40 60 80

1 10 100 1000

Switching Time [ns]

100 1000 10000 20000

Switching Loss [mJ]

100 1000 10000 20000

Switching Loss [mJ]

Figure 13. Turn−on Characteristics vs. Gate

Resistance Figure 14. Turn−off Characteristics vs. Gate Resistance

Figure 15. Turn−on Characteristics vs. Collector Current

Figure 16. Turn−off Characteristics vs. Collector Current

Common Emitter V_CC = 400 V, V_GE = 15 V IC = 40 A

T_C = 25°C T_C = 175°C

Gate Resistance, R_G [W]

t_r t_d(on)

0 10 20 30 40 50 10

100 1000

Gate Resistance, R_G [W] Common Emitter

V_CC = 400 V, V_GE = 15 V IC = 40 A

T_C = 25°C T_C = 175°C

t_f t_d(off)

Collector Current, I_C [A]

Common Emitter V_GE = 15 V, R_G = 6 W T_C = 25°C

TC = 175°C t_r

t_d(on)

Collector Current, IC [A]

Common Emitter VGE = 15 V, RG = 6 W T_C = 25°C

T_C = 175°C

0 10 20 30 40 50 Common Emitter

V_CC = 400 V, V_GE = 15 V IC = 40 A

T_C = 25°C T_C = 175°C

E_on E_off

Common Emitter V_GE = 15 V, R_G = 6 W T_C = 25°C

T_C = 175°C

t_d(off) tf

E_on

E_off

TYPICAL PERFORMANCE CHARACTERISTICS

10 10 100 200

200 400 600

0.01 0.1 1 10 100 1000 10000

650 50

0 10 20 30 40 50 0

200 400 600 800

Figure 19. Forward Characteristics Figure 20. Reverse Current

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

Figure 23. Reverse Recovery Current

1 2 3 4 5

T_C = 25°C TC = 75°C T_C = 125°C T_C = 175°C T_J = 75°C

T_J = 25°C T_J = 125°C T_J = 175°C

Forward Voltage, V_F [V]

Forward Current, IF [A]

T_C = 125°C T_C = 175°C

T_C = 25°C

Reverse Voltage, VR [V]

Reverse Current, IR [mA]

Forward Current, IF [A]

Stored Recovery Charge, Qrr [nC]

300 250 200 150 100 50

0 0 10 20 30 40 50

di/dt = 200 A/ms di/dt = 100 A/ms T_C = 25°C

TC = 175°C

Forward Current, I_F [A]

Reverse Recovery Time, trr [ns]

T_C = 25°C TC = 175°C

di/dt = 200 A/ms

di/dt = 100 A/ms di/dt = 200 A/ms

di/dt = 100 A/ms

0 10 20 30 40

0 2 4 6 8

Forward Current, I_F [A]

Reverse Recovery Current, Irr [A]

T_C = 25°C T_C = 175°C

di/dt = 100 A/ms di/dt = 200 A/ms

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 24. Transient Thermal Impedance of IGBT

Figure 25. Transient Thermal Impedance of Diode Rectangular Pulse Duration [s]

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰

1E⁻³ 0.01 0.1 1

0.5 0.2 0.1 0.05 0.02 0.01

Single Pulse

t₁ t₂ Duty Factor, D = t1/t2

Peak Tj = Pdm x Zqjc + TC

Thermal Response [Zqjc]

5

1

0.1

0.01

1E⁻³

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰

t1

t₂ Duty Factor, D = t₁/t₂ Peak Tj = Pdm x Zqjc + TC

Single Pulse 0.01 0.02 0.05 0.1 0.2 0.5

Thermal Response [Zqjc]

Rectangular Pulse Duration [s]

P_DM

P_DM

TO−247−3LD SHORT LEAD CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

AYWWZZ XXXXXXX XXXXXXX

E

D

L1 E2

(3X) b (2X) b2

b4

(2X) e

Q

L

0.25 ^M B A ^M A

A1 A2 A

c

B

D1 P1

S P

E1

D2

1 2 3 2

DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35 E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25 L1 3.69 3.81 3.93

P 3.51 3.58 3.65 P1 6.60 6.80 7.00 Q 5.34 5.46 5.58 S 5.34 5.46 5.58

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247−3LD SHORT LEAD

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license