NHH3CN

SO

₃

Cl

ᅗ4㛤Ⓨࡋࡓ᪂つ」ྜ㓟ᛶ ࢖࢜ࣥᾮయࡢᵓ㐀

䛆䛆◊✲άືሗ࿌䛇㻌㻌

άᛶ཯ᛂሙ䞉ྜᡂ◊✲㒊㻌

^䠄²⁰⁰⁹^䠊¹^䡚²⁰⁰⁹^䠊¹²^䠅㻌

ᩍ ᤵ㻌㻦㻌 ᒣ᰿ஂ඾㻌

ຓ 㻌 ᩍ㻌㻦㻌 ᒣ⏣㧗ᗈ䠈᳃ᡞ᫓ᙪ㻌

኱ Ꮫ 㝔 ⏕㻌㻦㻌 ᕝ㔝ဴஓ䠈၈ᶫ኱ᶞ䠈ⱉ㇂ⱥ㔛䠈ⓑ஭ᔞᖾ䠈㻌㻌㻌㻌 బ⸨⿱ே䠈ὸ಴㻌㥴㻌

㻌㻌㻌㻌

ᮏ◊✲㒊䛷䛿䠈άᛶ㔠ᒓ཯ᛂሙ䜢฼⏝䛧䛯㠀㓟໬≀⣔䝉䝷䝭䝑䜽䝇䜔㔠ᒓ㛫໬ྜ≀䛾ྜᡂ䛚䜘䜃ᅛ┦཯

ᛂἲ䛻䜘䜛ከඖ⣔᪂つ↓ᶵ໬ྜ≀䛾᥈⣴䛸䠈䛭䜜䜙䛾ᵓ㐀ゎᯒ䜔≉ᛶホ౯䛻䛴䛔䛶◊✲άື䜢⾜䛳䛶䛔䜛䠊㻞㻜㻜㻥 ᖺ䛾◊✲άື䛸䛧䛶䛿䠈௨ୗ䛾䜘䛖䛻ᴫᣓ䛥䜜䜛䠊㻌

㻌

㻝㻚㻌㻺㼍⼥ᾮ䛛䜙䛾㻿㼕 ⤖ᬗ䛾స〇䛸㻺㼍㻙㻿㼕 ஧ඖ⣔≧ែᅗ㻌

㻌 ኴ㝧㟁ụ⏝Si䛾㟂せᣑ኱䛻క䛔䠈㔞⏘໬䛻㐺䛧䛯᪂䛯䛺Si⤖ᬗ䛾స〇ἲ䛜ồ䜑䜙䜜䛶䛔䜛䠊ᡃ䚻䛿䠈ప⼥

Ⅼ㔠ᒓ䛷䛒䜛Na䛻╔┠䛧䠈䛣䜜䜢⁐፹䛸䛧䛯Si ⤖ᬗ䛾ప స〇䛻䛴䛔䛶᳨ウ䛧䛯䛸䛣䜝䠈⤖ᬗᡂ㛗䛻ᚲせ୙

ྍḞ䛺ᇶ♏㈨ᩱ䛷䛒䜛Na䛸Si䛾஧ඖ⣔≧ែᅗ䛻㛵䛩䜛ሗ࿌䛜䛺䛔䛣䛸䛜䜟䛛䛳䛯䠊ᮏ◊✲䛷䛿䠈♧ᕪ⇕ศ ᯒ䠄DTA䠅䛸 X ⥺ᅇᢡ ᐃ䜢⏝䛔䛶 Na-Si

஧ඖ⣔≧ែᅗ䜢సᡂ䛧䠈䛣䛾䝕䞊䝍䜢䜒䛸䛻䠈 Na⼥ᾮ䛛䜙䛾Si⤖ᬗ䛾స〇䜢ヨ䜏䛯䠊㻌DTA䛸X⥺ᅇᢡ䛾⤖ᯝ䜘䜚䠈Fig. 1䛻♧䛩䜘䛖䛺Na䛸Si䛾஧ඖ⣔≧ែᅗ䜢సᡂ䛧䛯䠊 NaSi䛾⼥Ⅼ䛿798ºC䠈NaSi䛸Na䛚䜘䜃Si 䛾ඹᬗ ᗘ䛿䛭䜜䛮䜜680ºC䛚䜘䜃750ºC 䛷䛒䜛䛣䛸䜢᫂䜙䛛䛻䛧䛯䠊సᡂ䛧䛯≧ែᅗ 䜢䜒䛸䛻䠈Si䜢⁐䛛䛧䛯Na⁐ᾮ䜢900C䛷 ຍ⇕䛧䠈⁐፹䛾 Na 䜢⵨Ⓨ䛥䛫䜛䛣䛸䛷䠈⢏

ᚄ䛜⣙100 m䛾⢏≧༢⤖ᬗ䜢స〇䛩䜛䛣䛸䛻ᡂຌ䛧䛯䠄Fig. 1(b)䠅䠊

㻌

㻞㻚㻌㻺㼍䝣䝷䝑䜽䝇ἲ䛻䜘䜛䃑㻙㻲㼑㻞㻿㼕䛚䜘䜃㻹㼓㻞㻿㼕䝞䝹䜽య䛾ྜᡂ䛸⇕㟁≉ᛶ㻌

-FeSi2䜔Mg2Si䛺䛹䛾㔠ᒓ䝅䝸䝃䜲䝗䛿䠈ᆅẆ䛻㇏ᐩ䛻Ꮡᅾ䛩䜛Ᏻ౯䛺ඖ⣲䛛䜙ᵓᡂ䛥䜜᭷ẘඖ⣲䜢ྵ䜎

䛺䛔䛯䜑䠈Ᏻ඲䛷⎔ቃ㈇Ⲵ䛜ᑡ䛺䛔⇕㟁ኚ᥮ᮦᩱ䛸䛧䛶ὀ┠䛥䜜䛶䛔䜛䠊ᡃ䚻䛿䠈Fe ཎᩱ⢊ᮎ䛾ᡂᆺయ䛸 Si

⢊ᮎ䜢Na䛸䛸䜒䛻ຍ⇕䛩䜛䠈䜎䛯䛿㔠ᒓ㛫໬ྜ≀NaSi 䛾ᡂᆺయ䜢Mg⢊ᮎ䛸ຍ⇕䛩䜛䛣䛸䛻䜘䜚-FeSi2䠈Mg2Si 䛾䝞䝹䜽య䜢స〇䛩䜛䛣䛸䛻ᡂຌ䛧䛯䠊䛣䛾᪂䛧䛔ᡭἲ 䛾ྜᡂ ᗘ䛿䠈ᚑ᮶ἲ䜘䜚䜒 300 700 K ప 䛷䛒䜛䠊 Fig. 2䛻ຍ⇕๓䛾Fe䛾ᅽ⢊ᡂᆺయ䛸䠈ຍ⇕ᚋ(1173 K䠈

24 h)䛻 Na 䜢ྲྀ䜚㝖䛔䛯ᚋ䛾ヨᩱ䛾෗┿䜢♧䛩䠊ຍ⇕

Fig.1 (a) Na-Si binary phase diagram and (b) photographs of the samples prepared by vaporizing Na from Na-40 mol% Si at 900ºC.

798ºC

2mm

100m

(a) (b)

Fig. 2 Photographs of a compact body of Fe powder (a) and a -FeSi2 bulk sample (b). A SEM image of polished surface of the -FeSi2 bulk sample (c).

ᚋ䛾ヨᩱᙧ≧䛿䠈ຍ⇕๓䛾Feᡂᆺయ䛸ྠᵝ䛾┤᪉య䛷䠈ຍ⇕๓䛾Feᡂᆺయ䛸ẚ㍑䛧䛶య✚䛜⣙2.5ಸ䛻ቑ ຍ䛧䛯䠊䛣䛾䝞䝹䜽య䛾◊☻㠃䛾 SEM ീ䠄Fig. 2(c)䠅䛸⢊ᮎ XRD ᅇᢡ䜘䜚䠈䝞䝹䜽య䛿⦓ᐦ䛷䠈ෆ㒊䜎䛷 -FeSi_䠎䛾༢┦䛷䛒䜛䛣䛸䛜♧䛥䜜䛯䠊ヨᩱ䛾䛛䛥ᐦᗘ䛿3.8 g/cm³䛷䛒䜚䠈-FeSi_䠎䛾⌮ㄽᐦᗘ䛾⣙80%䛷䛒䛳

䛯䠊Fe䛻ᑐ䛧䛶Mn䜎䛯䛿Co⢊ᮎ䜢5 at%ῧຍ䛧䛯ᅽ⢊ᡂᆺయ䜘䜚ྜᡂ䛥䜜䛯䝞䝹䜽యヨᩱ䛿䠈䛭䜜䛮䜜p

ᆺ䛸nᆺ䛾⇕㟁≉ᛶ䜢♧䛧䠈䛭䜜䜙䛾䝊䞊䝧䝑䜽ಀᩘ䛿400–950 K䛾 ᗘ⠊ᅖෆ䛷䠈䛭䜜䛮䜜+125䛛䜙+270 V/K䛸–120䛛䜙–180 V/K䛾್䜢♧䛧䛯䠊䛣䜜䜙䛾್䛸䛭䛾 ᗘ౫Ꮡᛶ䛿䠈㧗ᅽ䝥䝻䝉䝇䜢⏝䛔䛶స〇䛥䜜䛯

ྠᵝ䛺⤌ᡂ䛾Mn䛚䜘䜃Coῧຍ-FeSi_䠎䛸ẚ㍑䛩䜛䛸䠈Co䜢ῧຍ䛧䛯ヨᩱ䛾್䛜⤯ᑐ್䛻䛧䛶⣙100 μV/K ᑠ䛥䛔䜒䛾䛾䠈Mn䜢ῧຍ䛧䛯ヨᩱ䛾್䛻኱䛝䛺㐪䛔䛿䛺䛛䛳䛯䠊䜎䛯䠈స〇䛥䜜䛯Mg2Si䝞䝹䜽య䛿600 K䛷

⣙+400 V/K䛾䝊䞊䝧䝑䜽ಀᩘ䜢♧䛧䛯䠊䝜䞁䝗䞊䝥䛾Mg2Si䛿nᆺ༙ᑟయ䛷䛒䜛䛣䛸䛛䜙䠈ᮏྜᡂᡭἲ䛾ཎ

ᩱ䛻ྵ䜎䜜䜛Na䛜ヨᩱ䛻ᅛ⁐䛩䜛䛣䛸䛷䠈pᆺ䛾⇕㟁≉ᛶ䛜Ⓨ⌧䛧䛯䜒䛾䛸⪃䛘䜙䜜䛯䠊㻌

㻟㻟㻚㻌㻮㼕䝣䝷䝑䜽䝇䛻䜘䜛㻭㼘㻺䛾ప ྜᡂ䛸䝘䝜䝏䝳䞊䝤㻌

㻌III᪘❅໬≀䛷䛒䜛GaN䛚䜘䜃AlN䛾ప ྜᡂᡭἲ䛸䛧䛶NH3❅໬ἲ䛜ᣲ䛢䜙䜜䜛䠊䛣䛾ᡭἲ䛻䜘䜛GaN䛾ྜᡂ䛾ሙྜ䠈1273 K௨ୗ䛷䛿Ga⾲㠃䛻ⷧ䛔GaN⭷䛜 ᙧᡂ䛥䜜䜛䛰䛡䛷཰⋡䛜ప䛔䠊᭱㏆䠈Wu䜙䛿Ga䛻Bi䜢ῧຍ䛩䜛䛣䛸䛷NH3❅໬ἲ 䛻䛚䛡䜛GaN䛾⏕ᡂ཰⋡䜢ୖ䛢䜛䛣䛸䛻ᡂຌ䛧䛯(H. Wu et. al., J. Cryst. Growth, 279 (2005) 303.)䠊ᮏ◊✲䛷䛿䠈Bi䝣䝷䝑䜽䝇䛻䜘䜛AlN䛾ప ྜᡂ䜢ヨ䜏䠈ᮏᡭἲ 䛻䛚䛡䜛Bi䝣䝷䝑䜽䝇䛾ຠᯝ䜢᫂䜙䛛䛻䛧䛯䠊

㻌Al䛾䜏䜢NH3Ẽὶ୰䛷1273 K䠈3 hຍ⇕䛧䛯ሙྜ䛿䠈Al⾲㠃䛻⭷≧䛾AlNከ⤖

ᬗయ䛜ᙧᡂ䛥䜜䜛䛰䛡䛷䠈AlN䛾཰⋡䛿ᴟ䜑䛶ప䛛䛳䛯䠊୍᪉䠈Al䛻Bi䜢3䡚16%

ῧຍ䛧䛯ヨᩱ䜢ྠ䛨᮲௳䛷ຍ⇕䛧䛯⤖ᯝ䠈䜋䜌100%䛾཰⋡䛷AlNከ⤖ᬗయ䛜ᚓ䜙䜜䛯䠊AlN 䛾ྜᡂ䛷䜒཰⋡䛾ྥୖ䛻 Bi ῧຍ䛜᭷ຠ䛷䛒䜛䛣䛸䛜᫂䜙䛛䛻䛺䛳䛯䠊 Al-16%Bi䛾ཎᩱ䜢⏝䛔䛶స〇䛥䜜䛯ヨᩱ䛷䛿䠈Fig. 3(a)䛻♧䛩䜘䛖䛻䠈ཌ

䛥⣙0.2 mm䛾AlNከ⤖ᬗయ䛜䝹䝒䝪ቨ㠃䜢そ䛖≧ែ䛷⏕ᡂ䛧䛶䛔䛯䠊䝹

䝒䝪ഃ䛻᥋䛩䜛㠃䛷䛿䠈⢏ᚄ⣙0.6 μm䛾ᯈ≧⤖ᬗ⢏䛜จ㞟䛧䛯⤌⧊䛜ほ ᐹ䛥䜜䠈X⥺ᅇᢡ䝟䝍䞊䞁䜘䜚AlN䛾(001) 㠃㓄ྥ䛜♧䛥䜜䛯䠊䜎䛯䠈AlN ከ⤖ᬗయ䛾Ẽ┦ഃ⾲㠃䛻䛿ከᩘ䛾䝘䝜䝏䝳䞊䝤䛜ほᐹ䛥䜜䛯䠄Fig. 3(b)䠅䠊

㻠㻚㻌㻺㼍䝣䝷䝑䜽䝇ἲ䛻䜘䜛᪂つ䠏ඖ⣔໬ྜ≀ 㻮㼍㻟㻿㼕㻠㻯㻞䛾ྜᡂ䛸⤖ᬗᵓ㐀㻌

䠏ඖ⣔❅໬≀䜔❅໬≀ᇶ䛸䝆䞁䝖䝹㝜䜲䜸䞁ᇶ䛛䜙䛺䜛᪂䛧䛔໬ྜ≀䛾ྜᡂ䛻฼⏝䛥䜜䛶䛝䛯Na䝣䝷䝑䜽䝇 ἲ䜢Ⅳ໬≀⣔䛻㐺ᛂ䛧䛯䛸䛣䜝䠈᪂䛯䛻Ba-Si-C䛾䠏ඖ⣔໬ྜ≀Ba3Si4C2䜢ྜᡂ䛩䜛䛣䛸䛜䛷䛝䛯䠊䛣䛾᪂つ≀

㉁䛾༢⤖ᬗ䛿䠈Na䝣䝷䝑䜽䝇ἲ䛷ྜᡂ䛧䛯SiCᚤ⢊ᮎ䛸㔠ᒓBa䜢ཎᩱ䛸䛧䠈䛣䜜䜙䜢㔠ᒓ䝘䝖䝸䜴䝮䛸䛸䜒䛻BN

〇䝹䝒䝪䛻ධ䜜䠈Ar㞺ᅖẼ୰1023 K䛷䠍 hຍ⇕ᚋ䠈573 K䜎䛷ᚎ෭䛩䜛䛣䛸䛻䜘䜚ᚓ䜙䜜䛯䠊༢⤖ᬗX⥺ᅇ ᢡἲ䛻䜘䜚ᵓ㐀ゎᯒ䜢⾜䛳䛯⤖ᯝ䠈Ba3Si4C2䛿ṇ᪉ᬗ⣔䛷䠈᱁Ꮚᐃᩘ䛿䠈a = 8.7693(4), c = 12.3885(6) Å䛷䛒䜛䛣䛸䛜♧䛥䜜䛯䠊䛣䛾ᵓ㐀䛿Ba3Ge4C2䛸ྠᆺᵓ㐀䛷䠈SiཎᏊ䛷ᵓᡂ䛥䜜䛯ᅄ㠃యᆺ䛾Zintl䜰䝙䜸䞁䜽䝷䝇䝍䞊[Si4]⁴䛸䝎䞁䝧䝹ᆺ䛾[C2]²䛜⤖ᬗᵓ㐀୰䛻Ꮡᅾ䛧䠈䝨䝻䝤䝇䜹䜲䝖(CaTiO3)䛾ᵓ㐀䛻䛚䛡䜛CaཎᏊ䛾12 㓄఩䝃䜲䝖ෆ䛻[Si4]⁴䛜ධ䜚䠈Ti䝃䜲䝖䛾[C2]²䛿BaཎᏊ䜢㡬Ⅼ䛸䛩䜛ඵ㠃యෆ䛻఩⨨䛧䛶䛔䜛䠊

Fig. 3 (a) Photographs of the sample prepared by heating Al-16%Bi at 1273 K for 3 h under NH3 gas flow and (b) TEM image of the AlN nanotube grown on the AlN layer.

50 nm 50 nm 10 mm 10 mm (a)

(b) (a)

(b)

(0002)

34.3 34.4 34.5 34.6 34.7 34.8

INTENSITY (arb. units)

2(deg.) 34.562㼻

FWHM 61arcsec

GaN䛾᱁Ꮚᐃᩘ䛻┦ᙜ

䜰䝰䝜䝃䞊䝬䝹

⤖ᬗᒙ (0002)

34.3 34.4 34.5 34.6 34.7 34.8

INTENSITY (arb. units)

2(deg.) 34.562㼻

FWHM 61arcsec

GaN䛾᱁Ꮚᐃᩘ䛻┦ᙜ

䜰䝰䝜䝃䞊䝬䝹

⤖ᬗᒙ

ᅗ1㻌䜰䝰䝜䝃䞊䝬䝹ἲ䛷ᡂ㛗䛧䛯 GaN⤖ᬗ䛾X⥺ᅇᢡ䝟䝍䞊䞁

2=38ps 11.3ps

system FX_A

I₂¹ I₂²

0 50 100 150

TIME (ps)

9.6ps 1LO

11.4ps 13.1ps

PL INTENSITY (arb. units)

PL,eff

ᅗ2㻌AlN䜶䝢䝍䜻䝅䝱䝹ⷧ⭷䛾7K䛻䛚䛡䜛᫬㛫ศゎPLಙྕ

䛆◊✲άືሗ࿌䛇

㔞Ꮚᵓ㐀ᙧᡂ㻛ᇶᯈ䞉䝕䝞䜲䝇ホ౯◊✲㒊

^䠄²⁰⁰⁹^䠊¹^䡚²⁰⁰⁹^䠊¹²^䠅

ᩍ ᤵ㻌㻦⛛∗㻌㔜ⱥ㻌

ຓ ᩍ㻌㻦ᑿ἟㻌 ⊛൤㻌

ຓ ᩍ㻌㻦⩚㇋㻌 ⪔἞㻌

኱ Ꮫ 㝔 ⏕㻌㻦⃝஭㻌 Ὀ䠈ຍ㈡㇂㻌 ᐀ோ䠈ኳụ㻌 ᏹ᫂㻌䠄 2009. 1 䡚 2009. 3 䠅䠈 ᢲ㔝 ᡂே 䠄 2009. 1 䡚 2009. 3 䠅䠈ᫍ ᣅஓ 䠄 2009. 1 䡚 2009.

3 䠅䠈㻭㼘㼥㻌㻲㼛㼡㼐㼍㻘㻌 ୎㻌 ⪷໐㻌䠄 2009. 1 䡚 2009. 3 䠅䠈㔠㻌 ᮾᇆ 䠄 2009. 1 䡚 2009. 3 䠅

㻌

ᮏ◊✲㒊䛷䛿䠈䛂㻳㼍㻺䜔㼆㼚㻻䜢ᇶ┙䛸䛩䜛䚸䝥䝷䝛䝑䝖䝁䞁䝅䝱䝇䛺䝽䜲䝗䜼䝱䝑䝥㻵㻵㻵 ᪘❅໬≀༙ᑟయ䚸㻵㻵 ᪘ 㓟໬≀༙ᑟయᮦᩱ䞉䝘䝜ᵓ㐀䞉䝕䝞䜲䝇䛃䛻㛵䛩䜛◊✲䜢⾜䛳䛶䛔䜛䠊㻞㻜㻜㻥 ᖺ䛾◊✲άື䛿䠈௨ୗ䛾䜘䛖䛻ᴫ ᣓ䛥䜜䜛䠊㻌

㻌

㻝㻚㻌䜰䝰䝜䝃䞊䝬䝹ἲᡂ㛗㻳㼍㻺䛾㧗⣧ᗘ໬䛚䜘䜃ホ౯㻌

ྠ◊✲ᡤᐤ㝃㒊㛛䠄❅໬≀䝉䞁䝍䞊䠅▼㯮◊✲ᐊ䛻䛚䛔䛶䜰䝰䝜䝃䞊䝬䝹ἲ䛷ᡂ㛗䛧䛯㻳㼍㻺 ⤖ᬗ୰䛻䛿㓟⣲䛺䛹ከ䛟䛾୙

⣧≀䛜Ꮡᅾ䛧䛩䜛䛯䜑㧗⣧ᗘ໬䛜ᚲせ䛺஦䜢ぢฟ䛧䚸䜸䞊䝖䜽䝺䞊䝤ෆ㒊䜈䛾Ỉศΰධ䜢⃭ῶ䛥䛫䜛䛂㻺㻴㻠㻯㼘 Ẽ┦ྜᡂἲ䛃䜢㐙⾜ྍ⬟䛺䜺䝇⣔䜢タィ䞉〇స䛧䛯䚹㻡㻣㻡㻯䚸㻝㻠㻜㻙㻝㻣㻥㻹㻼㼍䛷㻤㻜㻜㼚㼙䛾㻳㼍 ᴟᛶ 㻳㼍㻺䜢ᡂ㛗䛧䛯䛸䛣䜝䚸ᅗ䠍䛻♧䛩䜘䛖䛻䚸㻳㼍㻺䛾᱁Ꮚᐃᩘ䛻┦ᙜ䛩䜛ᅇᢡゅᗘ䜘䜚పゅഃ䛻㼄 ⥺ᅇᢡ䝢䞊䜽㻔㻟㻠㻚㻡㻢㻞㻕䛜⌧䜜䛯䚹䛧䛛䛧䛺䛜䜙䚸㻳㼍㻺䛸䛾᱁Ꮚᐃᩘᕪ䛿㧗⣧

ᗘ໬๓䛾㻜㻚㻜㻜㻜㻠㼚㼙䛛䜙㻜㻚㻜㻜㻜㻞㼚㼙䜈䛸༙ῶ䛧䛯䚹ᐊ 㝜ᴟ⥺⺯

ග㻔㻯㻸㻕䝇䝨䜽䝖䝹䛿䚸᥹Ⓨᛶ୙⣧≀㓟⣲䛻㉳ᅉ䛩䜛῝䛔‽఩䛛䜙䛾Ⓨග䛜ᨭ㓄ⓗ䛷䛒䛳䛯䜒䛾䛾䚸䝞䞁䝗➃䛻㏆䛔Ἴ㛗㡿ᇦ

㻔㻺㻮㻱㻕䛷䛾Ⓨග䛜䚸㓟ᛶ㖔໬๣䜢⏝䛔䛯ᡂ㛗䛷䛿ึ䜑䛶ほ䛥䜜䛯䚹㻺㻮㻱䝢䞊䜽䛾್༙ᖜ䞉䝢䞊䜽䜶䝛䝹䜼䛛䜙䚸䜻䝱䝸䜰ᐦᗘ䛿㻝㻜^㻝㻥㼏㼙^㻙㻟๓༙⛬ᗘ䛸ண 䛥䜜䚸㧗⣧ᗘ໬๓䛾㻝㻜^㻞㻝㼏㼙^㻙㻟䛻ẚ䜉䛶㻞 ᱆௨ୖῶᑡ䛧䛶䛔䛯䚹㻌㻌

㻞㻚㻌㻭㼘㻺䛾᫬㛫ศゎ㻼㻸㻌

㻌㻭㼘㻺䛿㻢㻚㻜㻝㼑㼂䛾⚗ไᖏᖜ䜢ᣢ䛴䛯䜑䚸῝⣸እ⥺Ⓨග䞉

ཷග⣲Ꮚᮦᩱ䛸䛧䛶ὀ┠䛥䜜䛶䛔䜛䚹᭷ᶵ㔠ᒓ໬ᏛẼ┦

䜶䝢䝍䜻䝅䞊䠄㻹㻻㼂㻼㻱䠅ἲ䛻䜘䜚ᡂ㛗䛧䛯㻭㼘㻺 ⷧ⭷䛻ᑐ䛧䚸䝏䝍䞁䝃䝣䜯䜲䝲䝺䞊䝄䞊䛾ᅄಸ㧗ㄪἼ䜢⏝䛔䛯᫬㛫ศ ゎ䝣䜷䝖䝹䝭䝛䝉䞁䝇㻔㼀㻾㻼㻸㻕 ᐃ䜢⾜䛳䛯䚹ᅗ 㻞䛻䚸㌿఩

ᐦᗘ 㻞㻝㻜^㻤㼏㼙^㻙㻞䛾㻭㼘㻺䜶䝢⭷䛾㻣㻷䛻䛚䛡䜛㼀㻾㻼㻸 ಙྕ

䜢♧䛩䚹䛣䛾⤖ᯝ䚸㻭㼘㻺䛾ᴟప 䛻䛚䛡䜛㍽ᑕ෌⤖ྜᑑ

࿨䛜㻝㻜㼜㼟 ⛬ᗘ䛸ぢ✚䜒䜙䜜䛯䚹䛣䛾್䛿௚䛾㻵㻵㻙㼂㻵㻘㻌㻵㻵㻵㻙㼂

໬ྜ≀༙ᑟయ䛾ሗ࿌್䛻ẚ䜉㐭䛛䛻▷䛟䚸㻭㼘㻺䛜ᴟ䜑䛶

㍽ᑕᛶ䛻ඃ䜜䜛ᮦᩱ䛷䛒䜛䛣䛸䛜♧䛥䜜䛯䚹㻌

0 110⁶ 210⁶ 310⁶ 410⁶ 510⁶ 3.37

3.38 3.39 3.40

Photon energy (eV)

Wavenumber (cm^-1) UPB_B+LPB_C

PL intensity (arb. unit)

UPB_A+LPB_B

LPB_A AL

100

PL spectrum 0 110⁶ 210⁶ 310⁶ 410⁶ 510⁶ 3.37

3.38 3.39 3.40

Photon energy (eV)

Wavenumber (cm^-1) UPB_B+LPB_C

PL intensity (arb. unit)

UPB_A+LPB_B

LPB_A AL

100

PL spectrum

ᅗ5㻌8K䛾PL䝇䝨䜽䝖䝹(㉥⥺)䛸䝫䝷䝸䝖䞁 ศᩓ᭤⥺(㯮⥺)

[0001]

<1120>

<1010>

100 nm CL image at 3.60 eV

[0001]

<1120>

<1010>

[0001]

<1120><1120>

<1010>

100 nm 100 nm CL image at 3.60 eV

ᅗ4㻌3.60eV䛻䛚䛡䜛m㠃Al0.25Ga0.75Nⷧ

⭷䛾CLᙉᗘ䝬䝑䝢䞁䜾ീ(300K)

3.5 4.0 4.5 5.0 5.5 6.0 6.5 PHOTON ENERGY (eV)

350 300 250 200

WAVELENGTH (nm)

NORMALIZED EMISSION INTENSITY (arb. units)

X₂ m-plane Al_xGa_1-xN T=12 K

(a)

x=0.0 x=0.03

x=0.12 x=0.25

x=0.32 x=0.58

x=0.70

x=1.0 x=0.73MOVPE

NH₃ -MBE

3.5 4.0 4.5 5.0 5.5 6.0 6.5 PHOTON ENERGY (eV)

350 300 250 200

WAVELENGTH (nm)

NORMALIZED EMISSION INTENSITY (arb. units)

X₂ m-plane Al_xGa_1-xN

X₂ m-plane Al_xGa_1-xN m-plane Al_xGa_1-xN T=12 K

(a) T=12 K (a)

x=0.0 x=0.03

x=0.12 x=0.25

x=0.32 x=0.58

x=0.70

x=1.0 x=0.73MOVPE

NH₃ -MBE

ᅗ3㻌12K䛷䛾AlxGa1-xNⷧ⭷䛾೫ග CL䝇䝨䜽䝖䝹

㻌

㻟㻚㻌㼙㠃㻳㼍㻺 ᇶᯈୖ 㼙㠃㻭㼘㻳㼍㻺 ⷧ⭷䛾೫ග≉ᛶ㻌

㻌䜰䞁䝰䝙䜰䝋䞊䝇ศᏊ⥺䜶䝢䝍䜻䝅䞊㻔㻺㻴㻟㻙㻹㻮㻱㻕ἲ䛚䜘䜃㻹㻻㼂㻼㻱 ἲ䛻䜘䜚ᡂ㛗䛧䛯㼙㠃㻭㼘㼤㻳㼍㻝㻙㼤㻺 ⷧ⭷䛾Ⓨග䛾೫ග≉

ᛶ䛾ṍ౫Ꮡᛶ䜢ホ౯䛧䛯䚹ᅗ 㻟䛻䚸ప ೫ග 㻯㻸䝇䝨䜽䝖䝹䜢

♧䛩㻔ྛ 㻭㼘㻺䝰䝹ศ⋡㼤䛷Ⓨගᙉᗘ䛜ᙉ䛔᪉䛾೫ග 㻯㻸䝇䝨䜽䝖䝹䛷つ᱁໬䛧䛯㻕䚹ᨭ㓄ⓗ䛺Ⓨග䛾㟁ሙ䠄೫ග䠅ᡂศ䛿䚸㼤㻩㻜㻚㻞㻡䛸㻜㻚㻟㻞䛾㛫䛷㼄㻝䛛䜙㼄㻞䜈ኚ໬䛧䛯䚹䛣䛣䛷䚸㼄㻝䛿ヨᩱ

㠃ෆ䛷㼏㍈䛻ᆶ┤䚸㼄㻞䛿ヨᩱ㠃ෆ䛷㼏㍈䛻ᖹ⾜䚸㼄㻟䛿ヨᩱ㠃䛻ᆶ┤䛺ྛ᪉ྥ䛻㟁ሙ᣺ື㠃䛜䛒䜛䛣䛸䜢⾲䛩䚹⌮ㄽィ⟬䛷䛿䚸᭱䜒䜶䝛䝹䜼䞊䛾ప䛔㑄⛣䛿ᖖ䛻㼄㻟೫ග䛷䛒䜚䚸ヨᩱ⾲

㠃䛛䜙䛾Ⓨග䛿㼡㼚㼐㼑㼠㼑㼏㼠㼍㼎㼘㼑䛸䛺䜛䚹㻞 ␒┠䛻䜶䝛䝹䜼䞊䛾ప 䛔㻱㻞㑄⛣䛿㼤㻩㻜㻚㻞㻡䛸㻜㻚㻟㻞䛾㛫䛷㼄㻝೫ග䛛䜙㼄㻞೫ග䜈䚸᭱䜒䜶䝛䝹䜼䞊䛾㧗䛔㻱㻟㑄⛣䛿㼄㻞䛛䜙㼄㻝೫ග䜈ኚ໬䛧䛯䚹ィ⟬

⤖ᯝ䛿ᐇ㦂⤖ᯝ䛸Ⰻ䛔୍⮴䜢♧䛧䛯䚹㻌㻌

㻠㻚㻌㼙㠃㻳㼍㻺 ୖ 㼙㠃㻭㼘㻳㼍㻺䛾✵㛫ศゎ㻯㻸㻌

㻌㻺㻴㻟㻙㻹㻮㻱 ἲ䛻䜘䜚ᡂ㛗䛧䛯㼙㠃㻭㼘㼤㻳㼍㻝㻙㼤㻺 ⷧ⭷䛾✵㛫ศゎ㻯㻸 ᐃ䜢⾜䛳䛯䚹㼤㻪㻜㻚㻝㻞䛾㻭㼘㼤㻳㼍㻝㻙㼤㻺 ⷧ⭷䛾ᗈᇦⓎග䝇䝨䜽䝖䝹䛿䚸䝞䞁䝗➃Ⓨග䛾ప䜶䝛䝹䜼䞊ഃ䛻≉ᚩⓗ䛺Ⓨගᖏ䜢

࿊䛧䛯䚹ᅗ 㻠䛻䚸㻭㼘㻜㻚㻞㻡㻳㼍㻜㻚㻣㻡㻺 ⷧ⭷䛾㻟㻜㻜㻷䛻䛚䛡䜛ప䜶䝛䝹䜼䞊ഃ䛾Ⓨගᖏ䛾䝢䞊䜽䜶䝛䝹䜼䞊㻔㻟㻚㻢㻜㼑㼂㻕䛻䛚䛡䜛㼜㼘㼍㼚㻙㼢㼕㼑㼣

✵㛫ศゎ㻯㻸ᙉᗘ䝬䝑䝢䞁䜾ീ䜢♧䛩㻔Ⓨගᙉᗘ䛾㧗䛔㒊ศ䛜

ⓑᢤ䛝㻕䚹Ⓨගᙉᗘ䛾㧗䛔㒊ศ䛿㻔㻝㻕㼏㍈䛻ἢ䛳䛯ᖹ⾜⥺䛸䚸㻔㻞㻕

ୖ᪉䛛䜙ぢ䛯䛸䛝㻔㻝㻝㻞^-㻜㻕䛸㻔㻜㻜㻜㻝㻕䛸㻔㻝㻝㻞^-㻞㻕䛻ᅖ䜎䜜䛯୕ゅᙧୖ

䛾㒊ศ䛻ศ䛡䜙䜜䜛䚹䛣䜜䜙䛿㼜㼞㼕㼟㼙㼍㼠㼕㼏䛚䜘䜃㼎㼍㼟㼍㼘㻌㼜㼘㼍㼚㼑 ✚ ᒙḞ㝗䛾ᗄఱᏛⓗ㓄⨨䛻ᑐᛂ䛧䛶䛔䜛䚹㻌

㻡㻚㻌㻴㼃㻼㻿㻱䛻䜘䜛㧗ရ఩ 㼆㼚㻻䝩䝰䜶䝢䝍䜻䝅䝱䝹ᡂ㛗㻌㻌䝦䝸䝁䞁Ἴບ㉳䝥䝷䝈䝬䝇䝟䝑䝍䜶䝢䝍䜻䝅䞊㻔㻴㼃㻼㻿㻱㻕ἲ䛻䜘䜚䚸Ỉ⇕ྜᡂ 㼆㼚㻻 ᇶᯈୖ䜈⣙ 㻝㼙䛾㼆㼚㻻䜢ᡂ㛗䛧䛯䚹㻥㻡㻜㻯䚸䜺䝇ΰྜẚ㼇㻻㻞㻛㻔㻭㼞㻗㻻㻞㻕㼉㻩㻜㻚㻟㻡䛷ᡂ㛗䛧䛯䜶䝢⭷䛾⾲

㠃䛿ᖹᆠ䛷䚸㻜㻚㻞㻢㼚㼙䛾༢ཎᏊᒙ䝇䝔䝑䝥䜢࿊䛧䛯䚹ᐊ 㻼㻸䝇䝨䜽䝖䝹䛿㻺㻮㻱 Ⓨග䛜ᨭ㓄ⓗ䛷䛒䛳䛯䚹㻣㻷䛾㻼㻸䝇䝨䜽䝖䝹䛻䛿㗦䛔᮰⦡ບ㉳ᏊⓎග⩌䛻ຍ䛘䚸⦪Ἴ䞉ᶓἼ⮬⏤ບ㉳Ꮚ䛚䜘䜃ບ㉳Ꮚ䛾➨୍ບ㉳≧ែ䛾Ⓨග䝢䞊䜽䛜ほ䛥䜜䛯䚹ᅗ 㻡䛻㻭 ⮬⏤ບ㉳Ꮚඹ㬆䜶䝛䝹䜼䞊㡿ᇦ䛾㻼㻸䝇䝨䜽䝖䝹㻔㻤㻷㻕䛸䝫䝷䝸䝖䞁ศᩓ᭤⥺䜢♧䛩䚹㻼㻸䝇䝨䜽䝖䝹䛻⌧䜜䛯⦪Ἴ䞉ᶓἼ 㻭 ⮬⏤ບ㉳Ꮚ䛾Ⓨග䝢䞊䜽䛿䝫䝷䝸䝖䞁ศᩓ᭤⥺䛾䝪䝖䝹䝛䝑䜽䛾䜶䝛䝹䜼䞊㡿ᇦ䛻䛒䜚䚸ບ㉳Ꮚ䝫䝷䝸䝖䞁䛾Ⓨග䛷䛒䜛䛣䛸䛜☜ㄆ䛷䛝䜛䚹㻌

ドキュメント内研究業績・活動報告2009 (ページ 123-128)

SO

Cl

άᛶ཯ᛂሙ䞉ྜᡂ◊✲㒊㻌

ᩍ ᤵ㻌 㻦㻌 ᒣ᰿ஂ඾㻌

ຓ 㻌 ᩍ㻌 㻦㻌 ᒣ⏣㧗ᗈ䠈᳃ᡞ᫓ᙪ㻌

኱ Ꮫ 㝔 ⏕㻌 㻦㻌 ᕝ㔝ဴஓ䠈၈ᶫ኱ᶞ䠈ⱉ㇂ⱥ㔛䠈ⓑ஭ᔞᖾ䠈 㻌 㻌 㻌 㻌 బ⸨⿱ே䠈ὸ಴㻌 㥴㻌

㔞Ꮚᵓ㐀ᙧᡂ㻛ᇶᯈ䞉䝕䝞䜲䝇ホ౯◊✲㒊

ᩍ ᤵ㻌 㻦⛛∗㻌 㔜ⱥ㻌

ຓ ᩍ㻌 㻦ᑿ἟㻌 ⊛൤㻌

ຓ ᩍ㻌 㻦⩚㇋㻌 ⪔἞㻌

኱ Ꮫ 㝔 ⏕㻌 㻦⃝஭㻌 Ὀ䠈ຍ㈡㇂㻌 ᐀ோ䠈ኳụ㻌 ᏹ᫂㻌 䠄 2009. 1 䡚 2009. 3 䠅䠈 ᢲ㔝 ᡂே 䠄 2009. 1 䡚 2009. 3 䠅䠈ᫍ ᣅஓ 䠄 2009. 1 䡚 2009.

3 䠅䠈㻭㼘㼥㻌 㻲㼛㼡㼐㼍㻘㻌 ୎㻌 ⪷໐㻌 䠄 2009. 1 䡚 2009. 3 䠅䠈㔠㻌 ᮾᇆ 䠄 2009. 1 䡚 2009. 3 䠅

ᩍ ᤵ㻌㻦㻌 ᒣ᰿ஂ඾㻌

ຓ 㻌 ᩍ㻌㻦㻌 ᒣ⏣㧗ᗈ䠈᳃ᡞ᫓ᙪ㻌

኱ Ꮫ 㝔 ⏕㻌㻦㻌 ᕝ㔝ဴஓ䠈၈ᶫ኱ᶞ䠈ⱉ㇂ⱥ㔛䠈ⓑ஭ᔞᖾ䠈㻌㻌㻌㻌 బ⸨⿱ே䠈ὸ಴㻌㥴㻌

ᩍ ᤵ㻌㻦⛛∗㻌㔜ⱥ㻌

ຓ ᩍ㻌㻦ᑿ἟㻌 ⊛൤㻌

ຓ ᩍ㻌㻦⩚㇋㻌 ⪔἞㻌

኱ Ꮫ 㝔 ⏕㻌㻦⃝஭㻌 Ὀ䠈ຍ㈡㇂㻌 ᐀ோ䠈ኳụ㻌 ᏹ᫂㻌䠄 2009. 1 䡚 2009. 3 䠅䠈 ᢲ㔝 ᡂே 䠄 2009. 1 䡚 2009. 3 䠅䠈ᫍ ᣅஓ 䠄 2009. 1 䡚 2009.

3 䠅䠈㻭㼘㼥㻌㻲㼛㼡㼐㼍㻘㻌 ୎㻌 ⪷໐㻌䠄 2009. 1 䡚 2009. 3 䠅䠈㔠㻌 ᮾᇆ 䠄 2009. 1 䡚 2009. 3 䠅