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Preparation and

low

energy cathodoluminescent properties

of

SrGazS+

thin

films

activated

with

rare earth

2003 Hiroyoshi Nよ 可ima

Field emission displays (FEDs) are promising as one of the future flat-panel display technologies. For the success of FEDs, the phosphors are required to be low resistive to suppress the charging-up and also to have stable surface for high-density electron beam irradiation. The rare-earth-activated SrGazS+ phosphors are expected as potential candidates as the phosphors with its high luminous efficiency, saturated chromaticity and stability for high electron irradiation. However, these phosphors have high resistivity. However, they are overcome by making phosphors thin films. Therefore, the deposition of rare-earth- activated SrGazS+ thin films aimed at application for FEDs have carried out by a multi-source deposition technique. In this study, influence of GazS:/Sr flux ratio during the deposition and thermal annealing after the deposition for structural and luminescent characteristics of the SrGazS+ thin films activated with Ce or Eu. It was concluded as a result that the optimum conditions for the GazS/Sr flux ratio and the annealing process to prepare stoichiometric SrGazS+ films were around 60 and S00C for I hour in HzS, respectively. The SrGazS+:Ce and SrGazSa:Eu films prepared by optimum conditions showed blue and green emission with luminance of 1700 and 4000 cd/m2 and luminous efficiency of 3.0 and 7.1lm/W with (0.13, 0.10) and ((0.28, 0.59) chromaticity, respectively. These results suggest the potential for the phosphor screens in FEDs.

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