[PDF] Top 20 2015年12月期 第3四半期報告書 有価証券報告書 など | 大塚商会
Has 10000 "2015年12月期 第3四半期報告書 有価証券報告書 など | 大塚商会" found on our website. Below are the top 20 most common "2015年12月期 第3四半期報告書 有価証券報告書 など | 大塚商会".
Barrier capability of Hf-N films with various nitrogen concentrations against copper diffusion in Cu/Hf-N/n+-p junction diodes
... (Hf-N) films were prepared by reactive radio frequency (rf)-magnetron sputtering on blank silicon ...wafers. Nitrogen incorporation and phase transformation of hafnium-based thin film ... 完全なドキュメントを参照
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Barrier capability of HfN films with various nitrogen concentrations against copper diffusion in CuHf-N/n(+)-p junction diodes
... HfN barrier film still pos- sesses fcc structure and polycrystallinity after annealing at high tem- ...structure Cu/Hf-N/Si is retained. No Cu silicides are observed at the interface, ... 完全なドキュメントを参照
1
Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+-p junction diodes
... failures of hafnium and hafnium nitride barriers. Nitrogen incorporated hafnium film has improving barrier capability against cop- per ...diffusion. Nitrogen is incorporated into ... 完全なドキュメントを参照
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Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodes
... barriers against Cu diusion have been examined extensively in recent years ...diusion barrier for Cu because of the absence of any compounds between Cu and Ta, ... 完全なドキュメントを参照
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Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier
... realization of thermally stable Cu-contacted sys- tems suppressing mass transport over interface due to the high diffusivity and reactivity of Cu is an essential issue in the use ... 完全なドキュメントを参照
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Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+-p junction diodes
... Abstract In this study, the barrier properties of Hf and nitrogen incorporated Hf films were investigated by Cu/Hf-N/Si ...nitride films were ... 完全なドキュメントを参照
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Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+- junction diodes
... Abstract In this study, the barrier properties of Hf and nitrogen incorporated Hf films were investigated by Cu/Hf-N/Si ...nitride films were ... 完全なドキュメントを参照
1
Sputtered Cr and reactively sputtered CrNx serving as barrier layers against copper diffusion
... The results indicate that the thermal stability of Cu/Cr/pn junction diodes can be substantial- ly improved by using reactively sputtered CrN films with appropriate nitrogen contents in [r] ... 完全なドキュメントを参照
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Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment
... morphology of annealed Cu/barrier/Si was observed by scanning electron microscopy ...Compositions of failure sites were analyzed by energy dispersive spectrom- etry 共EDS兲 after removing both ... 完全なドキュメントを参照
2
Improving the Electrical Integrity of Cu/CoSi2 Contacted n+-p Junction Diodes Using Nitrogen-Incorporated Ta Films as a Diffusion Barrier
... With the addition of a 50-nm-thick TaN diffusion barrier between Cu and CoSi2, the junction diodes were able to sustain annealing up to 600 C without losing the basic integrity of the [r] ... 完全なドキュメントを参照
1
THERMAL-STABILITY OF CU/COSI2 CONTACTED P+N SHALLOW JUNCTION WITH AND WITHOUT TIW DIFFUSION BARRIER
... After 700~ annealing, a precipitate with size of several thousand angstroms can be found under the CoSt2 layer and some of the precipitate entered the C u film by breaking the Co[r] ... 完全なドキュメントを参照
4
Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs
... challenges of ultrathin gate oxide are becoming increasingly greater for deep submicrometer complementary metal oxide semiconductors 共CMOS兲 ...removal of the native oxide prior to gate oxidation becomes ... 完全なドキュメントを参照
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Enhancing the reliability of n+–p junction diodes using plasma treated tantalum barrier film
... properties of Ta barrier films treated with various plasma nitridations have been investigated by ...Ta barrier film after plasma treatments. The thickness of the amorphous layer ... 完全なドキュメントを参照
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Enhancing the reliability of n+-p junction diodes using plasma treated tantalum barrier film
... spectra of Cu/Ta(N,H)/Ta/Si with NH 3 plasma treatment for 30 min are shown in ...composition of Ta 68 N 32 as demon- strated by RBS analyses, which agrees well ... 完全なドキュメントを参照
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Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidation
... Figure 10 shows the surface morphology for the as-deposited Ta-nitride (or Ta2N)2° layer (Fig. No obvious grain growth of Ta-nitride was observed. This implies the fine grain of the Ta-n[r] ... 完全なドキュメントを参照
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TaN(x) thin films deposited through various flow ratios of N(2)/Ar for copper barrier properties
... those of the polycrystalline ...shown in Fig. 5c. As the N 2 /Ar flow ratio was 0.075, the Ta 2 N thin film was formed into the bcc poly- crystalline structure, verified by the ring pattern ... 完全なドキュメントを参照
Origin of ferromagnetism in nitrogen embedded ZnO:N thin films
... Abstract Nitrogen embedded ZnO : N films prepared by pulsed laser deposition exhibit significant ...presence of nitrogen ions contained in ZnO is confirmed by the secondary ion ... 完全なドキュメントを参照
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Thermal stability of AlSiCu/W/n(+)p diodes with and without TiN barrier layer
... The diodes with the contact-hole W-contacted structure were thermally less stable than the diodes with the self-aligned W-contacted structure, presumably because the[r] ... 完全なドキュメントを参照
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Dependence of deep level concentrations on ammonia flow rate in n-type GaN films
... increase in trap concentration of the E C ...is in excessive supply, it may generate a large number of E C ...avoided with special ... 完全なドキュメントを参照
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Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions
... Department of Electrical Engineering, Uni- versity of Michigan, Ann Arbor, in ...was with Bell Laboratories from 1989 to 1990, Electronics Laboratory, General Electric Company, from 1990 to ... 完全なドキュメントを参照
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