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onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

• R

_DS(on)

= 18 mΩ

(Max.)

@ V

_GS

= 10 V

, ID = 45 A

• Low

G

ate

C

harge (

T

yp

.

220 nC)

•

Low Crss

(

T

yp

.

200 pF)

• 100%

A

valanche

T

ested

Description

These N-Channel enhancement mode power field effect transistors are produced using

ON Semiconductor’s

proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.

Absolute Maximum Ratings

^TC = 25°C unless otherwise noted.

TO-3PN

GD

S

G

S D

• 175°C Maximum Junction Memperature Rating

Symbol Parameter FQA90N15 _F109 Unit

V

_DSS

Drain-Source Voltage 150 V

I

_D

Drain Current - Continuous (T

_C

= 25°C) - Continuous (T

_C

= 100°C)

90 63.5

A A

I

_DM

Drain Current - Pulsed

^{(Note 1)}

360 A

V

_GSS

Gate-Source voltage

±25

V

E

_AS

Single Pulsed Avalanche Energy

^{(Note 2)}

1400 mJ

I

_AR

Avalanche Current

(Note 1)

90 A

E

_AR

Repetitive Avalanche Energy

(Note 1)

37.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

6.0 V/ns

P

_D

Power Dissipation (T

_C

= 25°C) - Derate

A

bove 25°C

375 2.5

W W/°C

T

_J,

T

_STG

Operating and Storage Temperature Range -55 to +175

°C

T

_L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300

°C

Thermal Characteristics

Symbol Parameter Unit

R

_θJC

Thermal Resistance, Junction-to-Case

, Max.

0.4

°C/W

R

_θCS

Thermal Resistance, Case-to-Sink, Typ. 0.24

°C/W

FQA90N15 _F109

FQA90N15-F109

N-Channel QFET® MOSFET

150 V, 90 A, 18 mΩ Features

- F109 — N -Channe l QFET

®

MOSFET

www.onsemi.com 2

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

TO-3PN Tube N/A N/A 30 units

Package Marking and Ordering Information

Electrical Characteristics

^TC = 25°C unless otherwise noted.

NOTES:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 0.29 mH, IAS = 90 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.

3. I_SD ≤ 90 A, di/dt ≤ 300 A/μs, VDD ≤ BV_DSS, starting TJ = 25°C.

4. Essentially independent of operating temperature typical characteristics.

FQA90N15-F109 FQA90N15

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

_DSS

Drain-Source Breakdown Voltage V

_GS

= 0V, I

_D

= 250μA 150 -- -- V

ΔBV_DSS

/ ΔT

_J

Breakdown Voltage Temperature

Coefficient I

_D

= 250μA, Referenced to 25°C -- 0.15 -- V/°C

I

_DSS

Zero Gate Voltage Drain Current V

_DS

= 150V, V

_GS

= 0V V

_DS

= 120V, T

_C

= 150°C

-- --

-- --

1 10

μA μA

I

_GSSF

Gate-Body Leakage Current, Forward V

_GS

= 25V, V

_DS

= 0V -- -- 100 nA I

_GSSR

Gate-Body Leakage Current, Reverse V

_GS

= -25V, V

_DS

= 0V -- -- -100 nA

On Characteristics

V

_GS(th)

Gate Threshold Voltage V

_DS

= V

_GS

, I

_D

= 250μA 2.0 -- 4.0 V

R

_DS(on)

Static Drain-Source

On-Resistance V

_GS

= 10V, I

_D

= 45A -- 0.014 0.018

Ω

g

_FS

Forward Transconductance V

_DS

= 40V, I

_D

= 45A -- 68 -- S

Dynamic Characteristics

C

_iss

Input Capacitance V

_DS

= 25V, V

_GS

= 0V, f = 1.0MHz

-- 6700 8700 pF

C

_oss

Output Capacitance -- 1400 1800 pF

C

_rss

Reverse Transfer Capacitance -- 200 260 pF

Switching Characteristics

t

_d(on)

Turn-On Delay Time V

_DD

= 75V, I

_D

= 90A

R

_G

= 25Ω

(Note 4)

-- 105 220 ns

t

_r

Turn-On Rise Time -- 760 1500 ns

t

_d(off)

Turn-Off Delay Time -- 470 950 ns

t

_f

Turn-Off Fall Time -- 410 830 ns

Q

_g

Total Gate Charge V

_DS

= 120V, I

_D

= 90A V

_GS

= 10V

(Note 4)

-- 220 285 nC

Q

_gs

Gate-Source Charge -- 43 -- nC

Q

_gd

Gate-Drain Charge -- 110 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

_S

Maximum Continuous Drain-Source Diode Forward Current -- -- 90 A

I

_SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 360 A

V

_SD

Drain-Source Diode Forward Voltage V

_GS

= 0V, I

_S

= 90A -- -- 1.5 V

t

_rr

Reverse Recovery Time V

_GS

= 0V, I

_S

= 90A dI

_F

/dt =100A/μs

-- 175 -- ns

Q

_rr

Reverse Recovery Charge -- 0.97 --

μC

- F109 — N -Channe l QFET

®

MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Ch aracteristics

4

2 6 8 10

10^-1 10⁰ 10¹ 10²

Notes : 1. VDS = 30V 2. 250μs Pulse Test -55^oC

175^oC

25^oC ID , Drain Current [A]

V_GS , Gate-Source Voltage [V]

10^{-1 0} 10¹

10¹ 10²

V_GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V

Notes : 1. 250μs Pulse Test 2. T_C = 25^oC

ID, Drain Current [A]

10

V_DS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Sourc e Current

0.0 0.4 0.8 1.2 1.6 2.0 2.4

10^-1 10⁰ 10¹ 10²

175 C 25o ^oC _{Notes :}

1. V_GS = 0V 2. 250μs Pulse Test

IDR , Reverse Drain Current [A]

V_SD , Source-Drain Voltage [V]

0 50 100 150 200 250 300

0.00 0.03 0.06 0.09 0.12

Note : T_J = 25^oC V_GS = 20V

V_GS = 10V

RDS(on) [Ω], Drain-Source On-Resistance

I_D , Drain Current [A]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0 50 100 150 200 250

0 2 4 6 8 10 12

V_DS = 75V V_DS = 30V

V_DS = 120V

Note : I_D = 90 A

VGS, Gate-Source Voltage [V]

Q_G, Total Gate Charge [nC]

10^{-1 0} 10¹

0 3000 6000 9000 12000 15000 18000

C_iss = C_gs + C_gd (C_ds = shorted) C_oss = C_ds + C_gd C_rss = C_gd

Notes : 1. V_GS = 0 V 2. f = 1 MHz C_rss

C_oss C_iss

Capacitance [pF]

10

V_DS, Drain-Source Voltage [V]

- F109 — N -Channe l QFET

®

MOSFET

Typical Performance Characteristics

(Continued)

ZθJC(t), Thermal Response [oC/W]

Figure 8. On-Resistance Variation Figure 7. Breakdown Voltage Variation

vs. Tempera ture vs. Temperature

-100 -50 0 50 100 150 200

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Notes : 1. V_GS = 10 V 2. I_D = 45 A

RDS(ON), (Normalized) Drain-Source On-Resistance

T_J, Junction Temperature [^oC]

-100 -50 0 50 100 150 200

0.8 0.9 1.0 1.1 1.2

Notes : 1. V_GS = 0 V 2. I_D = 250 μA

BVDSS, (Normalized) Drain-Source Breakdown Voltage

T_J, Junction Temperature [^oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

25 50 75 100 125 150 175

0 20 40 60 80 100

ID, Drain Current [A]

T_C, Case Temperature [^oC]

10^{0 1} 10²

10^-1 10⁰ 10¹ 10² 10³

10 μs

DC 10 ms 1 ms

100 μs Operation in This Area

is Limited by R _DS(on)

Notes : 1. T_C = 25 ^oC 2. T_J = 175 ^oC

3. Single Pulse

ID, Drain Current [A]

10

V_DS, Drain-Source Voltage [V]

Figure 11. Transient Thermal Response Curve

1 0^-5 1 0^-4 1 0⁰ 1 0¹

1 0^-2

1 0^-1 N o te s :

1 . Z_{? J C}( t) = 0 .4 ^oC /W M a x . 2 . D u ty F a c to r , D = t₁/t₂ 3 . T_{J M} - T_C = P_{D M}* Z_{? J C}( t)

s in g lee p u s e D = 0 .5

0 .0 2 0 .2

0 .0 5 0 .1

0 .0 1

1 0^-3 1 0^-2 1 0^-1

t₁, S q u a r e W a v e P u ls e D u r a tio n [s e c ] t₁ P_DM

t₂

www.onsemi.com 4

- F109 — N -Channe l QFET

®

MOSFET

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms V

V

GSGS

V V

_DSDS

10 10%%

90%

90%

tt_d(d(onon)) tt_rr

tt_onon tt_ofofff tt_d(d(ooffff)) tt_ff

V V

_DDDD

V

V

DSDS

R R

LL

DU DUTT R

R

_GG

V V

_GSGS

Cha Charrge ge V

V

GSGS

10V

10V Q Q

gg

Q

Q

_gsgs

Q Q

_gdgd

V

V

GSGS

DU DUTT

V V

_DSDS

300n 300nFF 50K

50KΩΩ 200n 200nFF 12V

12V

Sam Samee TTyype pe

as as DU DUTT

===

E E E

_ASASAS

-- -- -- --

2 1 2 1 2 1

2 1--- LLL III

_ASASAS

BV BV

_DSSDSS

222

--- --- BV

BV

_DSDSSS

- V - V

_DDDD

V V

DDDD

V V

DSDS

BV BV

_DSDSSS

t t _pp

V V

DDDD

II

ASAS

V V

DS DS

(t) (t) II

_{D D}

(t) (t)

Ti Tim mee DUT

DUT R

R

_GG

LLL III

DDD

t t _pp

V V

_GSGS

V V

_GSGS

IG = const.

- F109 — N -Channe l QFET

®

MOSFET

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

V

DS

+

_

Driver R

_G

Same Type as DUT

V

GS

• dv/dt controlled by R

G

• I

SD

controlled by pulse period

V

_DD

L

I

SD

V

GS

10V ( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode Forward Voltage Drop

V

SD

I

FM

, Body Diode Forward Current

Body Diode Reverse Current I

RM

Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Gate Pulse Period --- DUT

V

DS

+

_

Driver R

_G

Same Type as DUT

V

GS

• dv/dt controlled by R

G

• I

SD

controlled by pulse period

V

_DD

LL

I

SD

V

GS

10V ( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode Forward Voltage Drop

V

SD

I

FM

, Body Diode Forward Current

Body Diode Reverse Current I

RM

Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Gate Pulse Period --- D = Gate Pulse Width

Gate Pulse Period ---

www.onsemi.com 6

- F109 — N -Channe l QFET

®

MOSFET

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION