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onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

© Semiconductor Components Industries, LLC, 2020

March, 2021 − Rev. 1 1 Publication Order Number:

NTPF360N65S3H/D

N‐Channel, SUPERFET ⁾ III, FAST

650 V, 360 mW , 10 A

NTPF360N65S3H

Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features

• ^{700 V @ T}

= 150 ° C

• ^{Typ. R}

= 296 m W

• Ultra Low Gate Charge (Typ. Q

= 17.5 nC)

• Low Effective Output Capacitance (Typ. C

= 180 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

• Lighting / Charger / Adapter

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION www.onsemi.com

V_DSS R_DS(ON) MAX I_D MAX

650 V 360 mW @ 10 V 10 A

D

S G

TO−220 FULLPAK CASE 221D GD

S

MARKING DIAGRAM

T360N65S3H = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week ZZ = Lot Code

T360N 65S3H AYWWZZ

NTPF360N65S3H

www.onsemi.com 2

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise specified)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

V_GSS Gate to Source Voltage DC ±30 V

AC (f > 1 Hz) ±30 V

I_D Drain Current Continuous (TC = 25°C) 10* A

Continuous (TC = 100°C) 6*

I_DM Drain Current Pulsed (Note 1) 28* A

EAS Single Pulsed Avalanche Energy (Note 2) 75 mJ

I_AS Avalanche Current (Note 2) 1.9 A

EAR Repetitive Avalanche Energy (Note 1) 0.83 mJ

dv/dt MOSFET dv/dt 120 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PD Power Dissipation (T_C = 25°C) 26 W

Derate Above 25°C 0.21 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

*Drain current limited by maximum junction temperature.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. I_AS = 1.9 A, R_G = 25W, starting T_J = 25°C.

3. I_SD ≤ 5.0 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case, Max. 4.71 _C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. 62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Shipping

NTPF360N65S3H T360N65S3H TO−220

FULLPAK 50 Units / Tube

www.onsemi.com 3

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 1 mA, T_J= 25_C 650 V

V_GS= 0 V, I_D= 1 mA, T_J= 150_C 700 V

DBVDSS/DTJ Breakdown Voltage Temperature

Coefficient I_D= 10 mA, Referenced to 25_C 0.63 V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 650 V, V_GS= 0 V 1 mA

V_DS= 520 V, T_C= 125_C 2.6

I_GSS Gate to Body Leakage Current V_GS=±30 V, V_DS= 0 V ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage V_GS= V_DS, I_D= 0.7 mA 2.4 4.0 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 5.0 A 296 360 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 5.0 A 11.2 S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 400 V, V_GS= 0 V, f = 250 kHz 916 pF

C_oss Output Capacitance 15 pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 180 pF

Coss(er.) Energy Related Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 24 pF

Qg(tot) Total Gate Charge at 10 V

VDS= 400 V, ID= 5.0 A, VGS= 10 V (Note 4)

17.5 nC

Qgs Gate to Source Gate Charge 4.3 nC

Qgd Gate to Drain “Miller” Charge 5 nC

ESR Equivalent Series Resistance f = 1 MHz 0.9 W

SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time

V_DD= 400 V, I_D= 5.0 A, VGS= 10 V, Rg= 12W

(Note 4)

15 ns

tr Turn-On Rise Time 6.7 ns

td(off) Turn-Off Delay Time 45 ns

tf Turn-Off Fall Time 7 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

I_S Maximum Continuous Source to Drain Diode Forward Current 10 A

I_SM Maximum Pulsed Source to Drain Diode Forward Current 28 A

V_SD Source to Drain Diode Forward

Voltage V_GS= 0 V, I_SD= 5.0 A 1.2 V

t_rr Reverse Recovery Time V_DD= 400 V, I_SD= 5.0 A, dI_F/dt = 100 A/ms

204 ns

Q_rr Reverse Recovery Charge 1.9 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

NTPF360N65S3H

www.onsemi.com 4

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, DRAIN−TO−SOURCE VOLTAGE (V) V_GS, GATE−TO−SOURCE VOLTAGE (V)

20 15

10 5

00 5 10 15

6 5

4 3

12 10 100

Figure 3. On Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Diode Forward Voltage Variation vs.

Source Current and Temperature

I_D, DRAIN CURRENT (A) V_SD, BODY DIODE FORWARD VOLTAGE (V)

20 15

5 00

0.2 0.4 0.6 0.8

1.2 1.0 0.8

0.6 0.4

0.2 0.10

1 100

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) Q_G, TOTAL GATE CHARGE (nC)

600 400

200 100

0 00 5 10 15 20

2 4 6 8 10

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W) IS, REVERSE DRAIN CURRENT (A)

CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V)

I_D = 5.0 A

V_DS = 400 V V_DS = 130 V

C_iss

C_oss C_rss f = 250 kHz

V_GS = 0 V

T_J = 25°C

TJ = 150°C T_J = −55°C V_GS = 10 V

V_GS = 20 V

T_J = 25°C

TJ = 150°C TJ = −55°C V_GS = 10 V

5.0 V

4.5 V

4.0 V 250 ms Pulse Test T_C = 25°C 20

6.0 V

10 7.0 V

250 ms Pulse Test VDS = 20 V

10

250 ms Pulse Test V_GS = 0 V

300 500

10² 10¹ 10⁰ 10⁻¹ 10⁵ 10⁴ 10³ 10⁶

C_rss = C_gd C_oss = C_ds + C_gd

C_iss = C_gs + C_gd (C_ds = shorted) T_C = 25°C

www.onsemi.com 5

TYPICAL CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs.

Temperature

Figure 8. On−Resistance Variation vs.

Temperature

T_J, JUNCTION TEMPERATURE (°C) T_J, JUNCTION TEMPERATURE (°C)

150 100

75 50 0

−25

−50 0.8−75 1.0 1.1 1.2

0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) T_C, CASE TEMPERATURE (°C)

1000 100

10 0.011

1 10 100

150 100

75 50

025 2 6 4 8 10 12

BVDSS, NORMALIZED DRAIN−TO− SOURCE BREAKDOWN VOLTAGE RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

10 ms

1 ms

Single Pulse TC = 25°C TJ = 150°C

100 ms

DC

125

25 125 175

I_D = 5.0 A V_GS = 10 V

150 100

75 50 0

−25

−50

−75 25 125 175

Figure 11. E_oss vs. Drain−to−Source Voltage V_DS, DRAIN−TO−SOURCE VOLTAGE (V)

500 400

300 200 100

00 0.5 1.0 1.5 2.0 3.0 3.5 4.0

Eoss (mJ)

600 I_D = 10 mA

V_GS = 0 V

0.9

2.5

Operation in this area is limited by RDS(on)

0.1 10 ms

NTPF360N65S3H

www.onsemi.com 6

TYPICAL CHARACTERISTICS

Figure 12. Transient Thermal Response Curve t, RECTANGULAR PULSE DURATION (sec)

10 0.1

0.01 0.001

0.0001 0.00001

0.001 0.1 1

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE

P_DM t1

t₂ Single Pulse

50% Duty Cycle 20%

10%

5%

2%

1%

Z_qJC(t) = r(t) x R_qJC R_qJC = 4.71°C/W

Peak T_J = P_DM x Z_qJC(t) + T_C Duty Cycle, D = t₁ / t₂ 0.01

1

www.onsemi.com 7

Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms R_L

V_DS V_GS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

t_d(on) t_d(off)

Q_g

Q_gd Q_gs

VGS

Charge VDS

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G

VGS DUT

L

ID

t_p

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

NTPF360N65S3H

www.onsemi.com 8

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_SD +

−

VGS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

ISD

(DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

www.onsemi.com 9

PACKAGE DIMENSIONS

TO−220 FULLPAK CASE 221D−03

ISSUE K

DIM A

MIN MAX MIN MAX MILLIMETERS 0.617 0.635 15.67 16.12

INCHES

B 0.392 0.419 9.96 10.63 C 0.177 0.193 4.50 4.90 D 0.024 0.039 0.60 1.00 F 0.116 0.129 2.95 3.28

G 0.100 BSC 2.54 BSC

H 0.118 0.135 3.00 3.43 J 0.018 0.025 0.45 0.63 K 0.503 0.541 12.78 13.73 L 0.048 0.058 1.23 1.47

N 0.200 BSC 5.08 BSC

Q 0.122 0.138 3.10 3.50 R 0.099 0.117 2.51 2.96 S 0.092 0.113 2.34 2.87 U 0.239 0.271 6.06 6.88 SEATING

PLANE

−T−

U C

S

J R

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW

STANDARD 221D-03.

−B−

−Y−

G N D

L K

H A

F Q

3 PL 1 2 3

B M

0.25 (0.010)M Y

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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