SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications.
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Symbol BC847 BC848 Unit
Collector − Emitter Voltage V
CEO45 30 V
Collector − Base Voltage V
CBO50 30 V
Emitter − Base Voltage V
EBO6.0 5.0 V
Collector Current − Continuous I
C100 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS Characteristic
(One Junction Heated) Symbol Max Unit Total Device Dissipation, (Note 1)
T
A= 25°C Derate above 25°C
P
D357 2.9 mW mW/°C Thermal Resistance,
Junction-to-Ambient (Note 1) R
qJA350 °C/W Characteristic
(Both Junctions Heated) Symbol Max Unit Total Device Dissipation, (Note 1) P
DSOT−563 CASE 463A
1 6
Q
1(1) (2)
(3)
(4) (5) (6)
Q
2http://onsemi.com
MARKING DIAGRAMS 1x M G
G BC847CDXV6T1
1x = Device Code x = G or M M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)
1
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
http://onsemi.com 2
ELECTRICAL CHARACTERISTICS (T
A= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C= 10 mA) BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V
(BR)CEO45
30 −
− −
−
V
Collector −Emitter Breakdown Voltage
(I
C= 10 mA, V
EB= 0) BC847CDXV6T1, SBC847CDXV6 BC848CDXV6T1
V
(BR)CES50
30 −
− −
−
V
Collector −Base Breakdown Voltage
(I
C= 10 mA) BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V
(BR)CBO50
30 −
− −
−
V
Emitter −Base Breakdown Voltage
(I
E= 1.0 mA) BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V
(BR)EBO6.0
5.0 −
− −
−
V
Collector Cutoff Current (V
CB= 30 V)
(V
CB= 30 V, T
A= 150°C) I
CBO−
− −
− 15
5.0 nA
m A ON CHARACTERISTICS
DC Current Gain
(I
C= 10 mA, V
CE= 5.0 V) (I
C= 2.0 mA, V
CE= 5.0 V)
h
FE420 − 270
520 −
800
−
Collector −Emitter Saturation Voltage (I
C= 10 mA, I
B= 0.5 mA)
Collector −Emitter Saturation Voltage (I
C= 100 mA, I
B= 5.0 mA) V
CE(sat)−
− −
− 0.25
0.6 V
Base −Emitter Saturation Voltage (I
C= 10 mA, I
B= 0.5 mA)
Base −Emitter Saturation Voltage (I
C= 100 mA, I
B= 5.0 mA) V
BE(sat)−
− 0.7
0.9 −
− V
Base −Emitter Voltage (I
C= 2.0 mA, V
CE= 5.0 V)
Base −Emitter Voltage (I
C= 10 mA, V
CE= 5.0 V) V
BE(on)580
− 660
− 700
770 mV
SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product
(I
C= 10 mA, V
CE= 5.0 Vdc, f = 100 MHz) f
T100 − − MHz
Output Capacitance (V
CB= 10 V, f = 1.0 MHz) C
obo− − 1.5 pF
Noise Figure
(I
C= 0.2 mA, V
CE= 5.0 Vdc, R
S= 2.0 kW,f = 1.0 kHz, BW = 200 Hz) NF
− − 10 dB
ORDERING INFORMATION
Device Specific Marking Package Shipping
†BC847CDXV6T1G
1G SOT−563
(Pb−Free)
4000 Units / Tape & Reel SBC847CDXV6T1G
BC847CDXV6T5G 8000 Units / Tape & Reel
BC848CDXV6T1G 1L SOT−563
(Pb−Free) 4000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain vs. Collector
Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current
I
C, COLLECTOR CURRENT (A) I
C, COLLECTOR CURRENT (A)
1 0.1
0.01 0.001
0 100 300 400 600 700 900 1000
0.1 0.01
0.001 0.0001
0 0.05 0.10 0.15 0.20 0.25 0.30
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current Figure 4. Base Emitter Voltage vs. Collector Current
I
C, COLLECTOR CURRENT (A) I
C, COLLECTOR CURRENT (A)
0.1 0.01
0.001 0.0001
0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.1
0.1 0.01
0.001 0.0001
0.2 0.3 0.5 0.6 0.8 0.9 1.1 1.2
h
FE, DC CURRENT GAIN V
CE(sat), COLLECT OR − EMITTER SA TURA TION VOL TAGE (V)
V
BE(sat), BASE − EMITTER SA TURA TION VOL TAGE (V) V
BE(on), BASE − EMITTER VOL TAGE (V)
200 500 800
V
CE= 1 V 150°C
25°C
−55°C
I
C/I
B= 20
150 ° C
25°C
−55°C
0.7 0.9
I
C/I
B= 20
150°C 25°C
−55°C
0.4 0.7 1.0
V
CE= 5 V
150°C 25°C
−55°C
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
http://onsemi.com 4
TYPICAL CHARACTERISTICS
Figure 5. Collector Saturation Region I
B, BASE CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient I
C, COLLECTOR CURRENT (mA)
1.6 1.2
2.0
2.8 2.4 1.2
1.6 2.0
0.02 1.0 10
0 0.1 20
0.4 0.8
V CE , COLLECT OR-EMITTER VOL TAGE (V) VB , TEMPERA TURE COEFFICIENT (mV/ C) ° θ
0.2 1.0 10 100
-55 ° C to +125 ° C T
A= 25 ° C
I
C= 50 mA I
C= 100 mA I
C= 200 mA I
C=
20 mA I
C= 10 mA
1.0
Figure 7. Capacitances V
R, REVERSE VOLTAGE (VOLTS) 10
Figure 8. Current−Gain − Bandwidth Product I
C, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80 100 200 300 400
60
20 40 30 7.0
5.0
3.0
2.0
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.5
V
CE= 10 V T
A= 25 ° C
C, CAP ACIT ANCE (pF) f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) T
0.8 4.0 8.0
T
A= 25 ° C
C
obC
ibFigure 9. Safe Operating Area V
CE, COLLECTOR EMITTER VOLTAGE (V)
100 10
1 0.001 0.1
0.01 0.1 1
I
C, COLLECT OR CURRENT (A) Thermal Limit
100 mS 10 mS
1 S 1 mS
SOT−563, 6 LEAD CASE 463A
ISSUE H
DATE 26 JAN 2021 SCALE 4:1
1
6
SOT−563, 6 LEAD CASE 463A
ISSUE H
DATE 26 JAN 2021
XX = Specific Device Code M = Month Code G = Pb−Free Package
XX M G GENERIC MARKING DIAGRAM*
1
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.
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