Preferred Device
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSB1011XV6T5, two BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This device is manufactured with a Pb−Free external lead finish only.
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
THERMAL CHARACTERISTICS Characteristic
(One Junction Heated) Symbol Max Unit Total Device Dissipation
TA = 25°C Derate above 25°C
PD
357 (Note 1)
2.9 (Note 1) mW mW/°C Thermal Resistance −
Junction-to-Ambient RqJA 350 (Note 1) °C/W Characteristic
(Both Junctions Heated) Symbol Max Unit Total Device Dissipation
TA = 25°C Derate above 25°C
PD
500 (Note 1)
4.0 (Note 1) mW mW/°C Thermal Resistance −
Junction-to-Ambient RqJA 250 (Note 1) °C/W Junction and Storage
Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad.
Preferred devices are recommended choices for future use and best overall value.
Q1
R1 R2
R2
R1
Q2 (1) (2)
(3)
(4) (5) (6)
SOT−563 CASE 463A
PLASTIC 1 23 65 4
UT = Specific Device Code (see table on following page) D = Date Code
MARKING DIAGRAM
UT D
Device Package Shipping† ORDERING INFORMATION
NSB1011XV6T5 SOT−563
(Pb−Free) 8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
NSB1011XV6T5
http://onsemi.com 2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Q1OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.5 mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS (Note 2)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 35 60 − −
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc
Input Resistor R1 7.0 10 13 kW
Resistor Ratio R1/R2 0.8 1.0 1.2 −
Q2OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.2 mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS (Note 2)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 80 140 − −
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc
Input Resistor R1 1.54 2.2 2.86 kW
Resistor Ratio R1/R2 0.038 0.047 0.056 −
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
Figure 1. Derating Curve 300
200 150 100 50
0−50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C) RqJA = 833°C/W
250
PD, POWER DISSIPATION (mW)
TYPICAL ELECTRICAL CHARACTERISTICS — Q1
V in
, INPUT VOLTAGE (VOLTS)
I C, COLLECTOR CURRENT (mA) h FE
, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
10
0 20 30
IC, COLLECTOR CURRENT (mA) 10
1
0.1
TA=−25°C
75°C
25°C
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance 1
0.1
0.01
0.001
0 20 40 50
IC, COLLECTOR CURRENT (mA) V CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
101 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C 25°C
−25°C TA=−25°C
25°C
Figure 5. Output Current versus Input Voltage
75°C 25°C
TA=−25°C 100
10
1
0.1
0.01
0.0010 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 6. Input Voltage versus Output Current 50
0 10 20 30 40
4
3
1 2
0
VR, REVERSE BIAS VOLTAGE (VOLTS) C ob
, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz IE = 0 V TA = 25°C
VO = 5 V
VO = 0.2 V IC/IB = 10
NSB1011XV6T5
http://onsemi.com 4
TYPICAL ELECTRICAL CHARACTERISTICS — Q2
75°C
−25°C 25°C
Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS)
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 11. Input Voltage versus Output Current IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA) 1
0.1
50 40
20 10
0
IC, COLLECTOR CURRENT (mA)
100 10
1 1000
10
1 0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN
1.5
45 50 40
30 20
10 00
Cob, CAPACITANCE (pF) 0.5
1 2 4
100
6 5 4 3 2 1 0.0010
1 10
IC, COLLECTOR CURRENT (mA)
10 9 8 7
10
30 20
10 0.10
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
TA = −25°C 25°C
75°C 25°C
TA = −25°C
75°C
25°C TA = −25°C 0.01
35 25
15 5
0.01 0.1 30
3.5 3 2.5
100
4.5
f = 1 MHz IE = 0 V TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
SOT−563, 6 LEAD CASE 463A
ISSUE H
DATE 26 JAN 2021 SCALE 4:1
1 6
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
98AON11126D DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2 SOT−563, 6 LEAD
SOT−563, 6 LEAD CASE 463A
ISSUE H
DATE 26 JAN 2021
XX = Specific Device Code M = Month Code G = Pb−Free Package
XX MG GENERIC MARKING DIAGRAM*
1
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
98AON11126D DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2 SOT−563, 6 LEAD
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada LITERATURE FULFILLMENT:
Email Requests to: [email protected] Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
