JAIST Repository: 触媒CVD法によるシリコン膜の低温結晶化に関する研究
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(2) Study on low-temperature crystallization of Si
(3) lm in catalytic CVD method Akira Heya JAIST (Japan Advanced Institute of Science and Technology) School of Materials Science, Matsumura Laboratory March, 1, 2000. The liquid crystal display (LCD) is expected as a display of next generation because of its high resolution, low energy consumption, thin and light weight. Recently, the higher resolution and lower cost are strongly required. In LCD, each picture elements are switched by thin
(4) lm transistors (TFTs) made of amorphous silicon (a-Si). However, TFT using polycrystalline silicon (poly-Si) is now extensively studied as an alternative of a-Si because of high carrier mobility. The requirements to poly-Si
(5) lm for this purpose are listed as; 1) low temperature process (＜ 400 ℃), 2) high mobility (≧ 10 cm2 /Vs) and 3) high deposition rate (≧ 0.4 nm/s). The catalytic chemical vapor deposition (Cat-CVD) method was developed at 1985 and poly-Si
(6) lms were obtained at temperatures lower than 400 ℃ using a SiH4 and H2 gas mixture at 1991. This work is intended to use such Cat-CVD poly-Si
(7) lms as new promising materials for TFT. The mechanism of low-temperature crystallization in Cat-CVD method is investigated by studying the role of atomic hydrogen. The relationship among chemical reactions for
(8) lm formation, crystal structure and mobility is also investigated in order to obtain TFT-quality poly-Si
(9) lms. The following conclusions are obtained. 1) The roles of atomic hydrogen are important for selective etching and crystallization of a-Si phase. The etching and crystallization by atomic hydrogen depend on structural properties of initial a-Si
(10) lms even if the structure of the a-Si
(11) lms appear similar from X-ray di raction and Raman spectroscopy. 2) The poly-Si
(12) lms with high deposition rate (1.1 nm/s) and high mobility (10 cm2 /Vs) can be obtained at temperature lower than 400 ℃. Thus, there is large possibility to be used in TFT fabrication.. Copyright c 2000 by Akira Heya. 1.
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