スイッチング電源とトリガ回路に関する研究

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30

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1. 1.1 1.2 2. 2.1 2.2DC/DC 2.3 2.4 DC/DC 3. 3.1 3.2 !1 3.3 !2 3.4 !$%&'( 3.5 4. 5. 5.1 5.2 6. 6.1 6.2 6.3 6.4 7. 7.1 7.2

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1. 1.1 2. 2.1 2.2 2.3 3. 4. 5.SAR-TDC 5.1 5.2SAR-TDC 6.

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1.

1.1

± IoT b a a[1][2] a a MOSFET b ba a a b a IC a a a a b × × a b a × × a a ba a MOSFET b b a a a × a a × DC/DC a a a b a × a a

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1.2

2 a 3 a a a a 4 a 5 a 6 a 7 a

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2.

2.1

a a a a a (DC:Direct Current) (AC:Altarnate Current) ba a (DC-DC ) DC-DC a MOSFET IGBT a a a a PWM / a a a a a a PWM a a b a a a a a a a 12V 3.3V 1A a a ( / ) 27.5% 27.5% b a a / a a b a a

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2.2 DC/DC

a Constant On Time a a 2.2 DC-DC 2.2 a a a L C × 180 a b a b : × a × × a a DC/DC

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2.3

2.3-2. a a a a 2.3-1 A a a )* )+,= . 1 + . (1) a A -1 0 a × 180 a a 2.3-1 a 0. 0 1 × 180 a a × 180 b a a× ba × 180 0. 0 1 b a ba

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2.4 DC/DC

DC/DC a a a a a a a a a 2.4-1 2.4-1. SW1 SW2 b b / a a SW1 SW2 a 1 1( 34 (() = 7*− 7+ 9 : 1 1(34(() ;<= > = : 7+− 7* 9 ;<= > 1( 34((*,) = 34(0) + @7+− 7₉ *A (*, (2) SW1 SW2 a

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1 1( 34 (() = −

7

%

9

: ₁₍1 34(() ;_<BB ;_<= = : − 7* 9 ;_<BB ;_<= 1( 34C(*DDE = 34((*,) − 7* 9 (*, (3) (2) (3) ba 34((*,) = 3(0) + @ 7+− 7* 9 A (*, 34((*,) − 3(0) = @ 7+− 7* 9 A (*, F34= @7+− 7₉ *A (*, 34C(*DDE = 34((*,) − 7* 9 (*, 34((*,) − 3C(*DDE = 7* 9(*DD F34 = 7* 9 (*DD F34 = 0 @7+− 7₉ *A (*,=7₉*(*DD @7+− 7₉ *A GH =7₉*(1 − G)H 7+ 9 GH = 7* 9 H G =7₇₃* (4) ba 0 1 a a G a a

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DC/DC a a a SW2 a MOSFET a 2.4-2 a × (Sawtooth wave) PWM a a ba[3][4] IJK(') ba a L,C a × 180 a b × × 2-4.3 Type b a IL(') = 1 'MN(ON+ OP) 'ONMP+ 1 'ONOPMP ON+ OP+ 1 'OQ(MN+ MP) + 1 'OQMQ+ 1 (5) RS a a a a RS=_F7FG L= 1 7TUSV (6) PWM a a PWM ba a b ba WJ(s) = eZ[\ (7) H(s) H(s) = IJK(')RSIL(')WJ(s) (8) ba

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3.

3.1

] ÷ (!*^; /!+,) a b (!+, = !*^;+ !`*[[) a DC/DC a ] = 7*^;∙ b* 7*^;∙ b*+ !`*[[ (9) b* a a b 3 a a[5][6] b b !N !P !L !N ![c !P !4 !d MOSFET !L*,J !L*,[; a !L*,[; b b DC/DC !`*[[ a 3.1-1 DC/DC a a a a[7][8][9] 3.1-1 DC/DC Rds1 Rds2 ESR RL ESR RC L C Rload Vi Vo ION IOFF

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3.2 !

N ![c MOSFET / a FH*, a 7+ 0V ba 0A b* a FH*DD a a b b a a 3.1.1 a a ![c= 1 6f[c7*b*CH*,+ H*DD E (10) 3.2-1

Vi

Io

Ton

Toff

0A

0V

Io

_Vi

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3.3 !

P a ESR(Equivalent Series Resistance) a MOSFET a a b a ESR M4 ESR Md a a ESR a !4 !4 = b*P∗ M (11) ESR a !d !d= bdP∗ Md )bd∝ b* (12) MOSFET a MOSFET ( / ) ba a 3.2.1(a) (b) MOSFET a b MOSFET a ON OFF ba ( 2: bij bikk) a Fb b* MJ[N a a !L*,JN=₇7* +,∗ lb* P₊FbP 12m ∗ MJ[N (13) MJ[P a a !L*,JP = @1 −₇7* +,A ∗ lb* P₊FbP 12m ∗ MJ[P (14) MOSFET !L*,J (5)(6) Fb 30 a FbP_/12 _a _ba[8] !L*,J = b*P∗ n 7* 7+,∗ (oJ[N− oJ[P) + MJ[Pp (15)

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(1-D)T

T

Io

Ib

It

I

off

DT

T

Io

Ib

It

Io

I

on

MOSFET MOSFET

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3.4 !

L*,[; a a a ba ba IC a b a

3.5

a a

q

_P

q

_N (16) (17) a[5][6] !P = !ris+ !4+ !d= qP∗ b*P !N = ![c= qN∗ b* !L*,[; (16) !`*[[ = !P+ !N+ !L*,[; = qP∗ b*P+ qN∗ b*+ !L*,[; (17) (9) a ](Fb*) =₇ 7*∗ b* *∗ b*+ qP∗ b*P+ qN∗ b*+ !L*,[; (18) !P !N !L*,[; b b (18) (18) 3.4-1 a a a b b b a a a a a

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a

3.4-1

a 1% a

b a

Mtuv(3)twoo%o = xOvu$yuv(t1 − ztv'yot1_ztv'yot1 x ∗ 100. (19)

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4.

DCDC Texas Instruments TPS54317 a TPS54317 EVM-159 4.1 [10] 4.1 . Texas Instruments TPS54317 7+ 3.0V/4.0V/5.0V/6.0V 7* 1.8V f[c 550kHz L 1.5 H C 200 F(100 F 2+1.0nF) a a ESR M4 ESR Md MOSFET MJ[N MOSFET MJ[P MOSFET H*, MOSFET H*DD !L*,[; a b a a a a a a a MOSFET MOSFET ba ( a

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b 4.1 4.2 4.3 a 1% a a a 4.1 4.2 b a b ba b a a 2 a 4.2 . ESR M4 10mΩ ESR Md 1mΩ MOSFET MJ[N 30mΩ at 3V 20mΩ at 4V 15mΩ at 5V 10mΩ at 6V MOSFET MJ[P 45mΩ at 3V 30mΩ at 4V 24mΩ at 5V 20mΩ at 6V IC b|d 4.8mA at 3V 5.1mA at 4V 5.2mA at 5V 5.3mA at 6V MOSFET H*, 2nsec MOSFET H*DD 4nsec

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4.1.

55%

60%

65%

70%

75%

80%

85%

90%

95%

0

0.5

1

1.5

2 Ef

fi

c

ie

n

c

y

Load Current [A]

3VFit

4VFit

5VFit

6VFit

3V

4V

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4.2. 4.1 4.3.

85%

86%

87%

88%

89%

90%

0.2

0.7

1.2

1.7 E

ff

ici

e

n

cy

Load Current [A]

3VFit

4VFit

5VFit

6VFit

3V

4V

5V

6V

-1.00

-0.80

-0.60

-0.40

-0.20

0.00

0.20

0.40

0.60

0.80

0

0.5

1

1.5

2 D

iff

e

re

n

ci

a

l

E

rr

o

r

[%

]

Load Current [A]

3V

4V

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5.

5.1

DC/DC ∆" ∆#$ ∆%& #& 5.1-1 [3][4]

'#&()) = ,-.())∆" + ,..())∆#$0− 2&∆%& (20)

,-.())|∆4₅67 ∆8967 ='#_∆"&=_:())#$ ;1 +₌) >?@A = #$(1 + C=DEF) 1 − =G_{HD + C=D(E} I+ EF+ E-?) (21) :()) =₎_G_{+ 2K=}#$ 0) + =0G (22) K =LMNOLPOLQ G R S I. (23) T0 =_GV√ISU . (24) T>?@ =_GVS@U Q. (25) K MOSFET 7

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5.1-1.

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5.2

5.2.1

5.2-1 ADCMT 6243 FRA5095

5.2.2

5.2-1 (23) (24) (25) 5.2-1 #$ 3.0V L 1uH C 135uF ESR ]I 10mΩ ESR ]S 1mΩ MOSFET ]-?U 30mΩ MOSFET ]-?G 45mΩ K 0.332 T0 14.07kHz T>?@ 994.66kHz

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5.2-1 (21) ,-. FRA(Frequency Response Analyzer) ,-. (24) 0.67 5.2-1 13 275kHz 1kHz

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5.2-1 -225 -180 -135 -90 -45 0 45 90

-100

-80

-60

-40

-20

0

20

40

100 1K

10K

100K

1M

P

h

a

se

[

d

e

g

]

Gain [dB]

Frequency [Hz]

Estimated

Gain,Phase

Measured

Gain,Phase

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6.

6.1

MATLAB SIMPLIS/SIMetrix Type 6.1-1 6.1-1 6.1-1 12V 5V 10 "H 20"F 47"F 2V 2V 200kHz 6.1-1

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6.2

6.2-1 6.2-2 6.2-1 SLF10145T-100M2R5-PF FG23X7R1C476MRT00 MOSFET IRFB4610 6.2-2 -Tektronix TDS1001C-EDU ADCMT 6243 Agilent 34401A INSTEK SFG-2004

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6.2-3 6.2-1 [11] #$ %$ &$ 6.2-4 6.2-2 MOSFET 6.2-2 Hi/Low OFF %'(_*++ ON %'(_*, ON MOSFET ON/OFF %'(_'-++ ON #' MOSFET 6.2-3 6.2-5 6.2-2 [12] 6.2-3 20m 2.6m MOSFET 11m

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6.2-4 ESR 5.1V 510 ( ) 10mA 47 F 6.2-1 ESR 6.2-2

0.001

0.01

0.1

1

10

100

100 1000

10000

100000

1000000

[Ω

]

[Hz]

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6.2-3 MOSFET 6.2-5 MOSFET 12V 1556.39mA %'(_*++ 345mV %'(_*, 328mV 16.8mV

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6.3

2.4-4 6.3-1 R1 4.7kΩ R2 1.8kΩ R3 100Ω Rbtm 3kΩ C1 10nF C2 470pF C3 10nF Texas Instruments LM741 NJU7102AD STMicroelectronics L6384 6.3-2 6.3-2 6 KENWOOD PA36-2A TEXIO PR18-1.2A Tektronix TDS1001C-EDU DL9510L ADCMT 6243 FRA5095 Agilent 34401A INSTEK SFG-2004

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6.3-1 6.3-2

6.3-3 1000mA

6.3-1 MOSFET

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6.3-2

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6.4

6.4-1 . ESR ./ 20mΩ ESR .$ 2.6mΩ MOSFET .'(0 11mΩ MOSFET .'(1 11mΩ 17mW 15.5mW/ MOSFET 23, 85nsec MOSFET 23++ 120nsec 0nsec/ 6.4-1 6.4-2 IC IC 3% 6.3.3 0 6.4-1 GND IC

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6.4-1 -6.4-2 -) )( ( ( ( % % ( A .1 -0 59 5 7 82 6 59 5 7 82 6 ) % % % ( % % ( 59 5 7 82 6 I4

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7.

7.1

MOSFET IC 4'5 4'5 / 6 / 6.4

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7.2

IC

6

Ω

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1.

1.1

t t 1.1 [13] 3 3 SAR-TDC

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2 Ω 3

4

5 SAR-TDC

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2.

2.1

2.1-1 (a) 2.1-1 (b) 2.1(a) 2 Track&Hold T7 2.1-1

Σ

Trigger

t

o

sin

ωt

cos

ωt

ON

OFF

Trigger Time To

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2.1.1 Track&Hold

ON ( ) OFF ( ) 2.1-2 Track&Hold

Vin

Vout

Track

Hold

Track

Hold

SW

ON

SW

OFF

Vin

Vout=Vc

Vout=Vin

Vc

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2.1.2 Gilbert cell

4 CMOS 2 M1 M2 CMOS RF M3 M6 CMOS M1 M2 RF M3 M6 LO 8*9:0− 8*9:1= .(>3− >? ) = .>3 A∗ tanh G80− 80 ? 28A I ∗ tanh G 81− 8JJJ1 28A I (1) 2.1-3 Gilbert

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2.2 2.2.1 2

2.2.1 2 Track&Hold

tK

Track mode

83 ALMNO= cos(ST) cos(ST) + cos VST +W₂X cos VST +W₂X

= cos1_{(ST) + sin}1_{(ST) = 1}

(2)

Hold mode

83 [3\' = cos(ST) cos(STK) + sin(ST) sin(STK) = cos VS]T TK^X (3)

( )

2.2-1 CMOS

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2.2.2

3

3 2.2-2

_0 = sin ST _1= sin `ST +2W₃b _c= sin `ST +4W₃b (4)

_0 _1 _c e0 e1 ec _0(e1− ec) + _1(ec− e0) + _c(e0− e1) (5) e, = _, Track mode 83_fghij = _0(_1− _c) + _1(_c− _0) + _c(_0− _1) = sin(ωt+4π/3){sin(ωt) sin(ωt+2π/3)} + sin(ωt){sin(ωt +2π/3) sin(ωt+4π/3)} + sin(ωt+2π/3){sin(ωt +4π/3) sin(ωt)} = 0 (6) Hold mode 83 [3\'= _0(e1− ec) + _1(ec− e0) + _c(e0− e1) = sin(ωt+4π/3){sin(ωt0) sin(ωt0+2π/3)} +sin(ωt){sin(ωt0 +2π/3) sin(ωt0+4π/3)} +sin(ωt+2π/3){sin(ωt0 +4π/3) sin(ωt0)} =3√3₂ sin(S(T − TK)) (7) CMOS 2.2-3

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2.2-2 3 2.2-3 CMOS 3 c

Σ

to

sin

ωt

sin

(ωt+2π/3)

+ + +

sin

(ωt+4π/3)

F1

F2

F3

S1

S2

S3

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2.3

2.2-1 2.2-3 LTSpice MOSIS TSMC 0.35μm CMOS 1MHz 25mVpp 4.3V 2 2.3-1 2.3-2 3 2.3-3 2.3-4 2.3-1 CMOS 2 2.3.2 CMOS 2

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2.3-3 CMOS 3

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Spice 1 3 3 FFT 2.3-5 3 3MHz 3 -50dB 10dB 2 3 2.3-5 2 3

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3.

2 2.3 2 3 3 3 (4) N N _, _,= sin(ST + (m − 1)n) n = 2W o (7) (4) N N 8, 8*_p= _0(e1− ec− eq− ⋯ − eps0− ep) + _1(ec− eq− et− ⋯ − ep− e0) + ⋯ + _p(e0− e1− ec− ⋯ − eps1− eps0) (8) N up = u0+ v wO ps0 Ox0 (9) u0 wO wO= 8Oy0− 8O = _Oy0(e0− e1− ⋯ − eO) + _OeOy0 − eOy0(_0+ _1+ ⋯ − _O) − 2_Oe0 = eOy0z_O− v _\ ps0 \x0 { − 2_Oe0+ _Oy0ze0− v e| p |x1 { (10) 2 up = u1+ v }O ps0 Ox1 u1= _0e1+ _1e0 (11)

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(10) (11) N 83_p = u1+ v ~eOy0z_O− v _\ ps0 \x0 { − 2_Oe0+ _Oy0ze0− v e| p |x1 { ps0 Ox1 (12) 3 (4) 83_p = u1+ v ~eOy0z_O− v _\ Os0 \x0 { − 2_Oe0+ _Oy0ze0− v e| Os0 |x1 { ps0 Ox1 83Ä= _0e1+ _1e0+ v ~eOy0z_O− v _\ 0 \x0 { − 2_Oe0+ _Oy0ze0− v e| 0 |x1 { 1 Ox1 = _0e1+ _1e0+ [ec(_1− _0) − 2_1e0+ _c(e0− e1)] = _0(e1− ec) + _1(ec− e0) + _c(e0− e1) (13) (5) (13) N

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4.

N 4.1 5 3 5 4.2 4.3 5 3 4.4 4.1 N Σ to to sinωt sin(ωt+θ) + + + sin(ωt+2θ) F1 F2 F3 S1 S2 S3 Sn sin(ωt+nθ) Σ Σ Σ Fn Σ +

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4.2 5

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3.3 5 3

3 -18dB 5

5

10MHz

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5.SAR-TDC

5.1

(SAR TDC) ADC μ TDC TDC( 5.1) [14][15] SAR-TDC SAR-TDC 5.2 5.3 START STOP Ck1 Ck2 5.1-1 TDC 5.1-2 SAR TDC

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LTSpice

5.1-3 5.1-4 3

2

5.1-3 5.1-2

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5.2 SAR-TDC

TDC LTSpice 5.2-1 3 2 SAR-TDC 0.1usec 3bit T = 0.3Ñ ÖÜá SAR-TDC CLK1 CLK2 SAR 011 3 1MHz TDC GHz Track mode & 5.2-1 SAR-TDC

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6.

2 3

SAR-TDC

3 2 3

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[1] H. Kobayashi, T. Nabeshima (Editors), Handbook of Power Management Circuits, Pan Stanford Publishers (2016)

[2] R. W. Erickson, D. Maksimovic, Fundamentals of Power Electronics, Second Edition, Kluwer Academic Publishers (2004)

[3]

[4]

[5] T. Kohama, T. Tahara, “Estimation of Power Conversion Efficiency for Low-Voltage Buck-Converter”, 87th_{Technical Report of Fukuoka Univ. (Sep. 2011).}

[6] , , , “

―5

VE ― 31 , 1 (2015)

[7] An Efficiency Primer for Switch-Mode, DC-DC Converter Power Supplies. https://www.maximintegrated.com/en/app-notes/index.mvp/id/4266

[8] Calculation of Efficiency of the Power Supply http://www.tij.co.jp/jp/lit/an/jaja220/jaja220.pdf

[9] Calculation of Power-Loss (Synchronous) Rohm Application Note, Available at:

http://rohmfs.rohm.com/en/products/databook/applinote/ic/power/switching_regulator/p ower_loss_appli-e.pdf

[10] TPS 54317 EVM-159 User’s Guide

http://www.tij.co.jp/jp/lit/ug/slvu146/slvu146.pdf

[11] FAQ

https://www.murata.com/ja-jp/support/faqs/products/capacitor/edlc/char/0005

[12] IRFB4610

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[13] M. Nelson, “A New Technique for Low-Jitter Measurements Using Equivalent-Time Sampling Ocilloscope”, Automatic RF Techniques Group 56th Measurement Conference - Metrology and Test for RF Telecommunications, Boulder, Colorado (Dec. 2000).

[14] R. Jiang, C. Li, M. Yang, H. Kobayashi, Y. Ozawa, N. Tsukiji, M. Hirano, R. Shiota, K. Hatayama,"Successive Approximation Time-to-Digital Converter with Vernier-level Resolution", 21th IEEE International Mixed-Signal Testing Workshop, Catalunya, Spain (July 2016)

[15] 2

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[1] , , , , , 7 (2017 3 2 3 3 ) [2] , , , DC/DC ETG-17-47, ETT-17-47 7 (2017 3 2 3 3 ) [3] 66 LSI (2017 6 24 )

[4] Shotaro Sakurai, Seiya Takigami, Takashi Ida, Yuki Ozawa, Nobukazu Tsukiji, Yasunori Kobori, Haruo Kobayashi, Ryoji Shiota,

“STUDY OF MULTISTAGE OSCILLOSCOPE TRIGGER CIRCUIT,”

IEEE International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), Xiamen, China (Nov. 6-9, 2017)

[5] Shotaro Sakurai, Nobukazu Tsukiji, Yasunori Kobori, Haruo Kobayashi,

“ESTIMATION OF CIRCUIT COMPONENT VALUES IN BUCK CONVERTER USING EFFICIENCY CURVE,”

[6] , , ,

DC/DC

ECT-018-028 Δ 2018 3

[7] Shotaro Sakurai, Nobukazu Tsukiji, Yasunori Kobori and Haruo Kobayashi "Circuit Component Estimation in Buck Converter Using Efficiency Curve" 5th International Symposium of Gunma University Medical Innovation and 9th International Conference on Advanced Micro-Device Engineering, (Dec. 6, 2018)

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[8] Yuki Ozawa, Takashi Ida, Shotaro Sakurai, Richen Jiang, Rino Takahashi, Haruo Kobayashi, Ryoji Shiota,

”SAR TDC ARCHITECTURE FOR ONE-SHOT TIMING MEASUREMENT,”

IEEE International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), Xiamen, China (Nov. 6-9, 2017).

[9] Takashi IDA, Yuki OZAWA, Jiang RICHEN, Shotaro SAKURAI, Seiya TAKIGAMI, Nobukazu TSUKIJI, Ryoji SHIOTA, Haruo KOBAYASHI,

“ARCHITECTURE OF HIGH PERFORMANCE SUCCESSIVE APPROXIMATION TIME DIGITIZER,”

[10] Yuki Ozawa, Takashi Ida,Richen Jiang, Shotaro Sakurai, Seiya Takigami, Nobukazu Tsukiji, Ryoji Shiota, Haruo Kobayashi,

“SAR TDC architecture with self-calibration employing trigger circuit,” The 26th IEEE Asian Test Symposium, Taipei, Taiwan (Nov. 28, 2017)

[11] , , , ,

PFC EMI

8 (2018 3 1

3 2 )

[12] Noriyuki Oiwa, Shotaro Sakurai, Yifei Sun, Minh Tri Tran, Jing Li, Yasunori Kobori, Haruo Kobayashi,

“EMI Noise Reduction for PFC Converter with Improved Efficiency and High Frequency Clock”,

IEEE 14th International Conference on Solid-State and Integrated Circuit Technology, Qingdao, China (Nov. 2018)

[13] Noriyuki Oiwa , Shotaro Sakurai, Nobukazu Tsukiji, Yasunori Kobori, Haruo Kobayashi”

”A Study on EMI Noise Reduction in Boost-Type PFC Circuit”

2nd International Conference on Technology and Social Science (ICTSS2018) , Kiryu, Japan (18-20 April, 2018)

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[14] Ahmad Bustoni, Noriyuki Oiwa, Shotaro Sakurai, Yifei Sun,Yasunori Kobori and Haruo Kobayashi,

"Bridge-less Power Factor Correction Converter with Adaptive Switching Pulse Enabling Control"

International Conference on Mechanical, Electrical and Medical Intelligent System 2018 (ICMEMIS2018) Kiryu, Japan (Nov. 4, 5 2018)

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2

μ

OB

Manimel Wadu Sahan Dulara Ahmad Bustoni