次世代ロジックデバイス配線に向けた無電解NiBめっき膜のバリア性能と電気特性評価

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-Volume Resistivity [ cm] Coefficient of thermal expansion [ 10-6_/K] Copper 1.7 16.6 Cobalt 5.8 6.4 Nickel 7.0 13.4 Ruthenium 7.4 13.0 30 2020 9

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-Composition Concentration[M] NiSO4 0.1 C₆H₅Na₃O₇ 0.2 Dimethylamine Borane 0.05 TiCl3 0 0.02

-Si Subtrate R.A.:DMAB before annealing R.A.:DMAB after annealing R.A.:0.02M TiCl3 After annealing R.A.:0.02M TiCl3 before annealing NiO Ni NiB Ni2Si

Fig. 1 Sheet resistance change of NiB or NiTiB films before and after 300~500°C - 20 minutes Ar annealing R.A. (DMAB) R.A. (0.01M TiCl3) as depo 255 R.A. (0.02M TiCl3) 30 2020 9

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1) T. Kizuka et al: -space nanometer wiring via nanotip .

2) ITRS 2013 Edition Chapter 4, 2013. 3) L.G. Wen et al:

with TiN Interface for Sub-10 nm Advanced Interconnects -26125, 2016.

4) M. M. Maqableh et al: -Resistivity 10 nm Diameter 4109, 2012. 5) C. K. Ranaweera1 et al:

Potassium Oleate Containing Silica Dispersions for Chemical Mechanical Polishing for Cobalt Interconnect J. Solid State Sci. Technol., 8, 3001-3008, 2019.

6) Z. Lia et al:

Cobalt Adhesion Layers and Tungsten Nitride Diffusion -State Letters, 8, 182-185, 2005.

7) K.H. Yu et al:

nitride barrier layers for ruthenium interconnect 35, 03E109, 2017.

8) S. Paolillo et al: advance

Technology B, 36, 03E103, 2018.

9) A. Kumar et al: Effect of composition on electroless deposited Ni-Co-P alloy thin films as a diffusion barrier for copper metallization Appl. Surf. Sci, 258, 7292-7967, 2012.

Table 3 Atomic ratio of

by EDX mapping

Atomic ratio by EDX mapping

Ti Ni

As deposited 13.3 86.7

After annealing at 500 4.5 95.5 Fig. 3 SEM images of NiB films before and after 500

annealing Before annealing R.A.:DMAB R.A.:0.01M TiCl3 R.A.:0.02M TiCl3 R.A.:DMAB R.A.:0.01M TiCl3 R.A.:0.02M TiCl3 After 500 annealing 30 2020 9

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10) Y.S. Tao et al Effect of W addition on the electroless deposited NiP (W) barrier layer Appl. Surf. Sci, 282, 632-637 2013.

11) Y.Wang et al: Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization Appl. Surf. Sci, 396, 333-338, 2017.

12) S.inazawa et al: Development of Electroless Ni Plating Bath Using Ti (III) Ion Reductant Journal of the Surface Finishing Society of Japan, 53, 694-697,2002

13) D. Zhang et al: -sputtering Co Ti alloy as a single barrier/liner for Co interconnects and thermal stability enhancement using TiN metal capping , Journal of Materials Science, 30, 10579 10588,2019. 14) A.duhin et al: -Electrochimica Acta , 54, 6036-6041, 2009. 15) , C, 188, 897-906, 2005. 16) 66, 507-510, 2015. 30 2020 9