AND8396/D
NCP1608
NCP1608電 率補正(PFC)
高調波規適 現設計 !"#350 W
"$%&'()最適性能*得+
臨界,通(CrM)-./"#独自電
方式0検知1234用!5 1近! 率(PF)達成"#6 電7蔵 高精度相894:誤;$%正確 御"#(:<=設計簡素>?@A B機能C装/ !"#
D$%&'()EFNCP1608 G用/HCrMI:PFC(400 V、100 W) 設計J装K! 説明/"#D 高 率L:時消費電 高$4<M IE時N率、?彩OP護機能QR !"。
PFC
S部T電UAVWXY:2Z電源
(SMPS)9[EI&2\整流WJ]4E
^_G用/ AC電源`+DC電
生成/"#/`/D方法非正弦波電流 消費*生aHb電 c給設Qd:e:*S
@O0"#"H政府規f電 g社`+要 求0電流h高調波成T抑R必 要*i0"#D+高調波成Tj要k 満H方法J/ $4<MIlPFCm路*最C普 n/ !"#(:<=Eo&p()整流 I&2\J]4E^_間PFC%&
接続/ 構成"(Figure 1)#I:
E$4<MIl 率補正最Cq般 的Om路構成#AC`+V6 電生成 /正弦波 電流消費/"#
Figure 1. Active PFC Stage with the NCP1608 Rectifiers
AC Line + High
Frequency Bypass Capacitor
NCP1608
PFC Pre−Converter Converter
+ Bulk Load Storage Capacitor
CrM
r電 (350 W未満)$%&'()s、
CrM (臨界,通)*t"/!御方式#
CrMu連続,通(DCM)J連続,通
(CCM)Jv界-./"#CrM94
電流*w達/HJI[E
=*開x"#
CrMy4電流L!CCM-.特徴J:
2Zz時電流*wiDCM-.特徴{
|QR !"#D御方式瞬時 電(Vin)J6 負荷応a }波数*~-/"。
CrM PFCI:E -.J波形
Figure 2示/"#PFC$%&'()G用 CrMI:E-.K! 詳/@
AND8123JP/D照/ @!#
APPLICATION NOTE
www.onsemi.jp
Figure 2. Schematic and Waveforms of an Ideal CrM Boost Converter Diode Bridge
AC Line
+
−
L
Diode Bridge
AC Line
+
−
L
+
The power switch is ON The power switch is OFF
Critical Conduction Mode:
Next current cycle starts when the core is reset.
Inductor Current
+
With the power switch voltage being about zero, the input voltage is applied across the inductor. The induct- or current linearly increases with a (Vin/L) slope.
The inductor current flows through the diode. The inductor voltage is (Vout − Vin) and the inductor current linearly decays with a (Vout − Vin)/L slope.
Vout
(Vout − Vin)/L IL(peak)
IL Vin
Vdrain
Vdrain
Vin/L
Vout
Vin If next cycle does not start then Vdrain rings towards Vin +
IL
Vin Vdrain
NCP1608
NCP1608統AB機能Ly9:E
高精度誤;$%L:消費電 流O特徴QR X0牢Or電 CrMI :PFC$%&'() H
#
NCP1608-.K! 詳/@NCP1608JP/D
照/ @!#NCP1608G用/HCrMI :E%&Figure 3示/"#
Figure 3. CrM Boost PFC Stage Featuring the NCP1608 +
AC Line EMI
Filter
1
4 3 2
8
5 6 7
+ Cbulk
LOAD (Ballast, SMPS, etc.) NCP1608
Vout
Rsense Cin
RZCD Rout1
Rout2
CCOMP
VCC
Ct
D L
FB Control Ct CS
GND ZCD DRV VCC
Vin
NB:NZCD
M
FByRout1JRout2構成抵抗TW 通a I:6 電検知/"#Fby
過電P護(OVP)L電P護(UVP)<
ControlJzEy間接続抵抗J
^_組0
幅限補1234形成/ !"#
J過電流P護行!"#7部e
Rsense(VCS)端電J7部&e:
(VILIM)比較/"#VCS*VILIM達J
*[O0"#ZCDyI:E9 4消磁検知/ I[/"#
I[E=ZCDy電(VZCD)*
VZCD(ARM)超RJ:/f* VZCD(TRIG)
未満L/"#ZCD線直接続H抵抗 ZCDy電流限/"#
NCP1608DRVy強 O6 QR
!"#Do:XY(4E y9:*L!HbSlMOSFET N率@:2Zz"#NCP1608*^M
I]HJ6 *“H”""状 態O+O!$4<MIJ2(I方%
]9m路7蔵/ !"#
VCCy電源y#VCC*
E[電(VCC(on))0CL!J^:
消費電流35mA未満#D 起-時 間*短@O0:時電 損*L減
"#
!"
CrMI:PFC設計K!
[E94?@$%&'() EF解説 !"#Table 1!@K`
示/"#
D$%&'()EFNCP1608 特長活`/H(400 V100 W)設計手 順K! 述"#*素早@部 求b
Hb¡用NCP1608^E¢]
www.onsemi.jp手"#
Table 1. Additional Resources for the Design and Understanding of CrM Boost PFC Circuits AND8123/D
AND8123JP/D
Power Factor Correction Stages Operating in Critical Conduction Mode AND8016/D Design of Power Factor Correction Circuits Using the MC33260 AND8154/D NCP1230 90 W, Universal Input Adapter Power Supply with Active PFC HBD853/D Power Factor Correction Handbook
!"1# %&'()*+,
£Table 2示/"#
Table 2. CONVERTER PARAMETERS
Parameter Name Symbol Value Units
Minimum Line Input Voltage VacLL 85 Vac
Maximum Line Input Voltage VacHL 265 Vac
Minimum Line Frequency fline(MIN) 47 Hz
Maximum Line Frequency fline(MAX) 63 Hz
Output Voltage Vout 400 V
Full Load Output Current Iout 250 mA
Full Load Output Power Pout 100 W
Maximum Output Voltage Vout(MAX) 440 V
Minimum Switching Frequency fSW(MIN) 40 kHz
Minimum Full Load Efficiency h 92 %
Minimum Full Load Power Factor PF 0.9 −
!"2#-./) 0,
I:E94 (L)eq.1計算"
#
Lv
Vac2@
ǒ
VǸ *out2 VacǓ
@hǸ @2 Vout@Pout@fSW(MIN)
(eq. 1)
:2Zz}波数*最L}波数0高@O L 電(N )*最¤ sJ 最S s方計算"#
LLLv
852@
ǒ
400Ǹ *2 85Ǔ
@0.92Ǹ @2 400@100@40 k +581mH DDLLLVacLL計算94
# LHLv
2652@
ǒ
400Ǹ *2 265Ǔ
@0.92Ǹ @2 400@100@40 k +509mH DDLHLVacHL計算94
#
400mH*選択"#94:許
¥;±15%#最S94: (LMAX) 460mH#eq.2B負荷時最L}波数計算/
"#
fSW+ Vac2@h
2@LMAX@Pout@
ǒ
1*Ǹ @2VoutVacǓ
(eq. 2)fSW(LL)+ 852@0.92
2@460m@100@
ǒ
1*Ǹ @240085Ǔ
+50.5 kHzfSW(HL)+ 2652@0.92
2@460m@100@
ǒ
1*Ǹ @2400265Ǔ
+44.3 kHzfSW VacLL J 50.5 kHzVacHL J * 44.3 kHz#
!"3#12Ct3)4
^_Ct最¤ 電時XY最 S6 電 時[E=*最SJOO 設V/"#最S[E=eq.3計算
"#
ton(MAX)+2@LMAX@Pout
h@VacLL2 (eq. 3)
ton(MAX)+2@460m@100
0.92@852 +13.8ms
Ct¥量*S¦J6 電 *過§O 0VacHL"HL6 電 時御範¨*狭"0
"#^_Ct eq.4計算/H 0
5`S@DJ推©/"#
Ctw2@Pout@LMAX@Icharge
h@VacLL2@VCt(MAX) (eq. 4)
IchargeXYVCt(MAX) NCP1608^(
記載 !"#所要6 電 c給 ªTO *最S[E=設V
Ct計算最SIchargeJ最¤VCt(MAX)G用/
@!#
NCP1608^(«¬ J
X0#
•
VCt(MAX) = 4.775 V (最¤)•
Icharge = 297 mA (最S) Ct次O0"#Ctw2@100@460m@297m
0.92@852@4.775 +860 pF
標準的O1 nF (±10%)ªTO®裕*得+"#
B高調波歪(THD)L減1.22 nF選択/"
(詳細D$%&'()EFTHDをさ らに低減する4()照)#
!"4#ZCD56578)4
0"±(Figure 4照)#I:線jZCD線
数比(N = NB: NZCD)eq. 5計算"#
NvVout*
ǒ
Ǹ @2 VacHLǓ
VZCD(ARM)
(eq. 5) Nv400*
ǒ
Ǹ @2 265Ǔ
1.55 +16
Figure 4. Realistic CrM Waveforms Using a ZCD Winding with RZCD and the ZCD Pin Capacitance
DRV
0 A
0 V
0 V 0 V 0 V Diode Conduction
MOSFET Conduction tz
RZCD Delay
Minimum Voltage Turn on
ton
toff TSW
tdiode VCL(NEG)
VZCD(TRIG) VZCD(ARM) VCL(POS) VZCD(WIND),on
VZCD VZCD(WIND),off
VZCD(WIND) Vout Vdrain IL(peak) IL
IL(NEG)
D設計数比10J/"#RZCD*ZCD 線JZCDyJ間接続 !"*D ZCDy電流限Hb#D電流 10 mA未満限/O«O0"±#RZCD eq.6計算"#
RZCDw Ǹ @2 VacHL
IZCD(MAX)@N (eq. 6)
RZCDw Ǹ @2 265
10 m@10+3.75 kW
!KZCD線²³*検6 I [*:`RZCD JZCDy
´生¥量J 決"0"# *S
/"#RZCD *¤¦Je電*
高!JI*[OHb:2Z zN率*L/"#RZCD選択q般的O方法 最¤e電[RZCD G 用DJ#D 験0見K"#
RZCDJZCDy¥量起¶遅延r等·
e¥量(CEQ(drain))*Figure 5示経路通a
放電"#
Figure 5. Equivalent Drain Capacitance Discharge Path +
AC Line EMI
Filter
+ D L
Iin
Cin
IL
Cbulk Vout
CEQ(drain)
CEQ(drain)MOSFET9[94
複的O´生¥量#CinCEQ(drain)放電
¸1]¹0º電"#Cinº電 I&2\整流W逆$:Hb 電流 (Iin)*w減»/"# 電流*wOJ THD*¼°/"#THDL減比率 (tz/TSW)最¤/"#DDtZIL = 0 A`+
IE["期間#比率(tz/TSW) L平方根½比/"#
!"5#FB9OVP9UVP:;<=)*, Rout1JRout2抵抗T¾W*構成DVout L減/ `+FBy¯°/"#誤;$%
I[E=調整/ FBy電 誤;$%¿準電(VREF)J等/!電維持 /"#計算最À手順T¾W123 4$:電流(Ibias(out))選択#T¾W12 34$:電流雑音®裕J消費電 e[最適> 選択"#Rout1
最適>H$:電流J6 電用!
eq.70計算"#
Rout1+ Vout
Ibias(out) (eq. 7)
100mA$:電流消費電 J雑音®裕 間許¥Á能Oe[提c/"#
Rout1+ 400
100m+4 MW
6 電²³Rout1JFBy¥量設V 時V数Hb遅延/ `+FBy¯°
"#Rout1S¦ O0"±#S¦
JD遅延 OVP検6電[(p
*発生DJ*i0"#
Rout2VoutRout1XY7部M24抵 抗(NCP1608Â様表記載RFB) 決"0"
#Rout2eq.8計算"#
Rout2+ Rout1@RFB
RFB@
ǒ
VVREFout *1Ǔ
*Rout1 (eq. 8)Rout2+ 4 M@4.6 M
4.6 M@
ǒ
4002.5*1Ǔ
*4 M+25.3 kWD設計Rout225.5 kW選択/ !"#
結果6 電選択/H抵抗G用/eq.9 0計算"#
Vout+VREF@
ǒ
Rout1@RRout2out2)@RRFBFB)1Ǔ
(eq. 9)Vout+2.5@
ǒ
4 M@25.5 k25.5 k)@4.6 M4.6 M)1Ǔ
+397 VPFC段幅*狭!Hb負荷急~時f起- 時[(p*生a"#NCP16086 * AB電超RO!OVPm路7蔵/ !"
#OVPm路VFBJ7部過電検6/!電 比較/ OVP障Ã*発生/H``ÄV/"
# OVP検6電eq.10計算"#
Vout(OVP)+VOVP
VREF@VREF@
ǒ
Rout1@RRout2out2)@RRFBFB)(eq. 10)1Ǔ
Vout(OVP)+1.06@2.5@
ǒ
4 M@25.5 k25.5 k)@4.6 M4.6 M)1Ǔ
+421 V6 ^_(Cbulk) y4¢y4 6 電&2%](Vripple(peak-peak))*OVP検6電
OªTSO¥量O0"#Cbulk eq.11計算"#
Cbulkw Pout
2@p@Vripple(peak−peak)@fline@Vout (eq. 11)
DDfline = 47 Hz&2%]電3:E'
:Vripple(peak-peak) < 42 V# Cbulkw 100
2@p@42@47@400+20mF
Cbulk 68mFJ/ 選択Vripple(peak-peak)
15 V未満L"#D0y46
電406.25 VJO0D y46 OVP
検6電(421 V)#
NCP1608L電P護(UVP)機能7蔵/ !"
#起-rCbulk*AC電y4 "
º電"#Cbulk*最¤電"º電O!
sNCP1608UVP障Ã検6/"#UVP検6
電eq.12計算"#
Vout(UVP)+VUVP@
ǒ
Rout1@RRout2out2)@RRFBFB)1Ǔ
(eq. 12)Vout(UVP)+0.31@
ǒ
4 M@25.5 k25.5 k)@4.6 M4.6 M)1Ǔ
+49 VUVP機能M24E]%[%
E]%状態jP護C提c/"#FBy*
誤 状態OHs(Æ9Çu良O
)(:<=7È2%&z VFB*AV
>範¨7(OÉVUVP < VFB < VREF)Á能 性*i0"#最S電 c給/
D応答/"#J6 電*Ê昇/ 部
過度O:e:*``0"#NCP1608FB*
状態s(:<=P護機能7蔵 / !"#7蔵%]9抵抗(RFB)0 FBy*状態OHsVFB*UVP /! O/"#
-.rFBy*/HsVFB* VREF`+L/xb"#L率RFBJFBy
´生¥量 ËÌ"#VFB*L
JVControl*Ê昇/Í [E=
VFB < VUVP"Ê昇/"。VFB < VUVPJ、UVP 障Ã*検6*^MI]
"#Figure 6(':示/"#
Figure 6. UVP Operation if Loop is Opened During Operation
Loop is Opened
UVP Fault Ct(offset) VEAH VUVP VREF VFB
VControl Vout Vout VCC
VCC(off) VCC(on)
!"6#>?@3)4
電 部¯°電流J電維持 ªTO®裕*得+ 決V/"#
電*最¤6 電 *最SJ94 Ey4電流*最SO0電 部最S:
e:*``0"#D+部Figure 3示/
"#
1.94Ey4電流(IL(peak))eq.13計 算"#
IL(peak)+Ǹ @2 2@Pout
h@Vac (eq. 13)
IL(peak)+Ǹ @2 2@100
0.92@85 +3.62 A
94N電流(IL(RMS))eq.14計算"
#
IL(RMS)+ 2@Pout
Ǹ @3 Vac@h (eq. 14)
IL(RMS)+ 2@100
Ǹ @3 85@0.92+1.48 A
2.6 9[(D)N電流(ID(RMS))
eq. 15計算"#
ID(RMS)+4
3@ Ǹ @2 2
Ǹ
p @ Pout h@Ǹ
Vac@Vout(eq. 15) ID(RMS)+4
3@ Ǹ @2 2
Ǹ
p @ 1000.92@Ǹ85@400+0.75 A
9[``最S電VOVP(421 V)
´生¥量影響[(p°RH O0"。D^EÎ最S電450 V
#600 V9[s^Me<MzÏ
数25%#D設計MUR460 (4 A/600 V)9 [選択/ !"#
3. MOSFET(M)N電流(IM(RMS))eq.16計 算"#
IM(RMS)+ 2
Ǹ @3
ǒ
hP@outVacǓ
@Ǹ
1*ǒ
Ǹ @32@p8@@VVacoutǓ
(eq. 16) IM(RMS)+ 2
Ǹ @3
ǒ
0.92100@85Ǔ
@Ǹ
1−ǒ
Ǹ @32@p8@@40085Ǔ
+1.27 AMOSFET``最S電VOVP(421 V)´生
¥量影響[(p°RH O0
"#D^EÎ最S電450 V#
560 VMOSFETs^Me<MzÏ数
20%#D設計SPP12N50C3 (11.6 A/560 V) MOSFET選択/ !"#
4.電流:抵抗(Rsense)MOSFET最S 94Ey4電流限/D eq.17計算"#
Rsense+ VILIM
IL(peak) (eq. 17)
DDVILIM NCP1608^(記載
!"#
Rsense+ 0.5
3.62+0.138W
消費電 L減Hb電流:抵抗
0.125W*選択"#Í結果最S94
Ey4電流4AJO0"#MOSFET連続電流
V格7 A (£È^(記載JX
0、TC = 100°Cs)、94飽Ð電流4.7 A O最Sy4E94電流4 AªTL!
#
Rsense消費電 eq. 18計算"#
PR
sense+IM(RMS)2@Rsense (eq. 18) PR
sense+1.272@0.125+0.202 W
5.6 ^_(Cbulk)N電流eq.19 計算"#
IC(RMS)+ Ǹ @2 32@Pout2
9@p@Vac@Vout@h2*Iload(RMS)2
Ǹ
(eq. 19) IC(RMS)+ Ǹ @2 32@1002
9@p@85@400@0.922*0.252
Ǹ
+0.7 ACbulk 手順5計算&2%]電L
@抑R OVP*&ÑO!/"#Cbulk
N電流*CbulkV格超RO!
Hbs ¼fDJ*必要#
Cbulk電V格Vout(OVP)0高@必要*
i0"#Vout(OVP)421 VOCbulk電V格
*450 VO選択/"#
!"7# >A>BVCC
VCC^_(CVcc)VCC(on)º電標準的O
方法VinJVCC間抵抗接続DJ#
NCP1608起-時消費電流*»O!Hb、起-時抵
抗電流S部TCVccº電DJ*"#
D起-時消費電流*»O!Hb起-時間*短
@:時消費電 *減»/"#起-時 間(tstartup)概算 eq.20計算"#
tstartup+ CV
CC@VCC(on) Ǹ @2 Vac
Rstart *ICC(startup)
(eq. 20)
DDICC(startup) = 24mA (標準 )#
CVcc*47mF^_J/ 選択、Rstart*
660 kWJ/ 選択Hststartup次
O0"#
tstartup+ 47m@12 Ǹ @2 85
660 k*24m
+3.57 s
VCC電*VCC(on)達JNCP16087部&
e:J\24m路*[O0"#
NCP1608VCC*VCC(off)0L@O+O!限0 確-.状態維持L電24$
(UVLO)機能QR !"#DÒ:<&(:
0Ó電源*VCC電 c給ªTO時 間*確P"#
ZCD線*考R+解決策*ZCD線 発生電*必要O電0CL!s*i0"
#CqK方法ZÔ\EÕ%m路 装/ VCCc給DJ#ÍOm路 Figure 7示/"#
Figure 7. The ZCD Winding Supplies VCC using a Charge Pump Circuit
+
1
4 3 2
8
5 6 7 GND
ZCD NCP1608
+ Cin
Rstart D1
R1
CVcc RZCD
C3 IAUX DAUX
DRV VCC FB
Control Ct CS
C3ZÔ\EÕ%用¸1]¹蓄R"
#R1電~>率L減DJ 電流 限/"#DAUXÈoÖ*負J C3電流c給/正JVCC¯°
最S電限/"#
C3端電1}期X電~-eq.21 計算"#
DVC3+Vout
N *VCC (eq. 21)
CVccº電電流eq. 22計算"#
IAUX+C3@fSW@DVC3+C3@fSW@
ǒ
VNout*V(eq. 22)CCǓ
PFC必要J[AC−DC電源s、
q般2段方式*G用"#1段目CrMI:
PFC#D`+2段目(q般24"
H×3方式絶縁l)電 c 給/"#D解決策:N果*高@ H性 能達成/"#L6 電 状態JPFC段 u要i0N率*L/"#NCP1230fNCP1381 OØ進L6 電 状態検6
/PFC(VCC)Ù0Ú/ PFC段(Ô29
/"(Figure 8)#
Figure 8. Using the SMPS Controller to Supply Power to the NCP1608 1
7 6 5 2
3 4
NCP1608
+
+ +
+ 1
7 6 5 2
3 4
NCP1230 PFC(VCC)
8 8
+ D
Cbulk
VCC
+
−
!"8#CD>E)FG
PFC%&AC電急接続 J突電流*流通常 数ÛÜ振電[
(p*発生/"#突電流XYÜ振電 [(pÝ理Hb電 部
見直/ ! :*``0¦"#
1. 突電流限用ÚÇ抵抗
NTC (負温度Ï数)_:9[J直
接続/ 突電流抑R"(Figure 9)#NTC 抵抗I2R電 損 °熱J数[
=`+数&[=L/"#/`/NTC抵 抗AC電Lfm復時OAC 電瞬断時発生突電流`+94 JCbulkªTP護O!XÍ*i0"#
2. 起-時:整流W
Vin`+Vout整流W*接続"(Figure 10)# D整流W94d起-電流迂m
直接Cbulk流Þ/"#D方法O+
Ü振[(pC過度O94電流CO
@AC電y4 "Cbulk*º電
"#起-後Dbypass逆$:*``H b、I:EßÃDJi0"
±#
Figure 9. Use a NTC to Limit the Inrush Current Through the Inductor
NCP1608
+ Vac
Vin NTC
Vout
Figure 10. Use a Second Diode to Route the Inrush Current Away from the Inductor
NCP1608
+ Vac
Vin
Vout Dbypass
!"9#HIJK/)LM,
%& 電J6 電 範¨B
H AV-.補"#]%
補HbControlyJzEy間
補1234*接続"# 率高@
Hb]%幅20 Hz未満設V"
#D設計à相®裕ÊHb
%2補1234*選択"#%2 補1234Figure 11示/"#
Figure 11. Type 2 Compensation Network FB
Control
+
− E/A
+ gm
CCOMP RCOMP1
CCOMP1 Rout2
Rout1
VControl Vout
RFB
VREF
Compensation Network
%21234CCOMP、CCOMP1、RCOMP1 構成"#CCOMP14:[}波数 (fCROSS)設V/eq.23計算"#
CCOMP1+ gm
2@p@fCROSS (eq. 23)
D設計THDL減HbfCROSS*平
á 電(175 Vac)時5 Hz設V"#gm
NCP1608^(規V !"#
CCOMP1+ 110m
2@p@5+3.5mF
3.3mF正規>H *選択D0 fCROSS*5.3 Hz設V"#
RCOMP1追°J]%応答*wO0"
#w}波数(fzero)q般4:[}波数 âT設V"#D':2.5 Hz
#RCOMP1eq.24計算"#
RCOMP1+ 1
2@p@fzero@CCOMP (eq. 24)
RCOMP1+ 1
2@p@2.5@3.3m+19.3 kW
RCOMP120 kW選択"#CCOMP高}波
FãM]G用CCOMP1 1/10ä1/5設V"#D設計CCOMP
CCOMP11/5O選択"#
CCOMP+
ǒ
15Ǔ
@3.3m+0.66mF CCOMP0.68mF選択"#à相®裕XY4:[}波数AC 電応a ~>/"#i+å-.条kj/
æ得Jà相測VDJ*重要#123 4E$çG用/H測V2$2%
Figure 12示/"#
Ch A High−Voltage
(> 450 V) Isolation Probe
Ch B High−Voltage
(> 450 V) Isolation Probe
Figure 12. Gain-Phase Measurement Setup for a Boost PFC Pre-Converter +
AC Line
EMI Filter
GND ZCD
+
Load Vout
Ct
Isolator Network Analyzer L
NCP1608
D
M Cbulk
Rsense 1 kW
VCC Cin
RZCD Rout1
Rout2 CCOMP
VCC DRV 4
3 2 1
CS Ct Control FB
5 6 7 8
PFXYTHDj過渡応答e[*
i0"#M24E]%幅*狭!
HbControly&2%]電*L/"#
Controly&2%]電*LJPF*高@
O0THD*減»/"*[(pJ$9 (p*S@O0"#
THDNO%PQ
NCP1608[E=*èV X0¬設
計最適>é際自由度*高@O !"#
設計ÑPFJTHD+改 êHb方法提c/"#
1.RS/STU-V)WXYZ,[\]^_
`>TTHD/PF)ab,#
èV[E=CrM御1K欠点AC
*wE4:J瞬時 電*uª TèV[E=期間r94ªT O¸1]¹*蓄R+O!DJ#¸1]¹
*ëJ±Ý理5“wE4:[歪” (Figure 13)*発生/"#
Zero Crossing Distortion Vout (10V/div, ac coupled)
Iin (500mA/div)
Vin (100V/div)
Figure 13. Full Load Input Current (Vin = 230 Vac 50 Hz, Iout = 250 mA) wE4:歪0THD*¼°/%&
PF*L/"#NCP1608ªT®裕持
電流歪L減HbIEC61000-3-2 要k満HDDJq般的ì題i 0"±#THD"HPF改ê必要*is wE4:歪L減必要*i0"#
wE4:歪L減Hb瞬時 電
*w減»/H+[E=*延長"#
D094電流蓄積Hb時間
*長@O0歪*x"瞬時 電*L/"
#D方法Vin`+Ct抵抗接続/ 装
"(Figure 14)#抵抗電流(ICTUP)瞬時電
比/IchargeJ算 Ctº電電流¼°
"#
ICTUPViny4最SJO0wE4:
時ëíwO0"#
Figure 14. .Add RCTUP to Modulate the On Time and Reduce Zero Crossing Distortion +
AC Line
Ct +
− PWM
Ct
L
ton
Ct(offset) VControl VDD
Icharge
DRV Vin
Cin RCTUP
ICTUP+ Vin RCTUP
Viny4時º電電流*¼RHbVacHL
"HL6 電 時御範¨狭bDJO@
Ct^_¥量S@DJ*"#
Ct^_ *S!JwE4:Ç近 [E=*長@O0wE4:歪*L
減"(Figure 15)#AC}期}波数~- C減»/"#D方法欠点RCTUP :時電 損*¼SDJ#THD XYPF求b+性能J:時電 損
j要k:é必要*i0"。
Figure 15. On Time and Switching Frequency With and Without RCTUP time Vac(t)
ton
fSW
with RCTUP with RCTUP
no RCTUP
no RCTUP
THDRCTUPdîï度Figure 16示/"#
RCTUP = open Ct = 1 nF
RCTUP = 1.5 MW Ct = 1.22 nF
Figure 16. Dependency of THD on RCTUP (Iout = 250 mA)
85 115 145 175 205 235 265
0 2 4 6 8 10 12 14
THD (%)
Vin (Vac)
2.^_D>Bcd P`>ETTHD\PF)ab ,#最S 電時"HL6 電流時所要[E
=*最¤[E=(tPWM)0短!s DRV]::ð2%/ 6 過§O電 *送 +O!/"#D 次(' :*発生/"#
1.[E=*過§OJVcontrol* Ct(offset)"L/"#
2. Vcontrol < Ct(offset)JI^M
I]"#
3.I*^MI]Vout*L/
"#
4. Vout*LJVControl*Ê昇/"#
5.D(':*繰0返"#Figure 17 (':示/"#
Figure 17. Required On Time Less Than the Minimum On Time
DRV Ct(offset) VControl VREF VFB Vout Vout
D(': 電流歪*S@
O0"#最S 電時"HL6 電流時 THDXYPF改ê方法次2K#
1.^_Ct最適O¥量DJ#ñ述 JX0^_Ct最¤
電時XY最S6 電 時[E=
*最SJOO 設V"#Ct
¥量*S¦JVacHL"HL6 電 時御範¨*狭"0"#
2.ò播遅延補:
^_Ct¥量最適>/ C必要O性 能*達成O!sCtJ直抵抗 (RCT)接続/ PWMò播遅延補
DJ*必要Os*i0"#Figure 18
示JX0Ct電*VControl設V 達
JPWMe*[
E=終ó²³送6/"#
Figure 18. Block Diagram of the Propagation Delay Components
Ct +
− PWM Control
Driver
Ct RCT
VDD Icharge
DRV
VControl
Ct(offset)
VCt(off)
DRV
RDRV
Rsense Vgate
Iswitch
VCt(off)達/ `+MOSFET*ôB[O
"遅延(tdelay)*i0"#tdelayPWM
eò播遅延(tPWM)JMOSFET電
*wO"時間(tgate) 生a"#
D+遅延Figure 19示/"#
Figure 19. Turn Off Propagation Delays Ct
tPWM
tgate tdelay VCt(off)
Vgate
Iswitch
計遅延eq.25計算"#
tdelay+tPWM)tgate (eq. 25)
tdelay MOSFET際[E=*長
@O0"#
抵抗(RCT)^_Ct直接続/Hs Bõ[E=eq.26計算 短
@O0"#
Dton+Ct@DVRCT
DIRCT +Ct@RCT (eq. 26)
/H* ò播遅延補Hbeq.27 RCT 計算/"#
RCT+tdelay
Ct (eq. 27)
NCP1608 ^ ( tPWM最S 130 ns規V !"#tgateMOSFET 電荷JRDRV応a ~>/"#D^EÎ
遅延時間約230 ns測V"#
RCT+360 n
1 n +360W
ò播遅延補、RCT = 365WªT。
Figure 20ò播遅延補DJ VacHL
XYL6 電 時THDL減方法示/"
#
RCT = 0 W
25 30 35 40 45 50
0 10 20 30 40 50
THD (%)
Figure 20. Low Output Power THD Reduction with RCT (Vin = 265 Vac 50 Hz, RCTUP = Open, Ct = 1 nF)
Pout (W) RCT = 365 W
DRV Pulse Skipping Begins
6 電 範¨B方THDL減手法 組 THDöDJ*"。Figure 21 wE4:歪L減/ò播遅延補
DJ 6 電 範¨BX! 最S 電時THDL減方法示/"#
RCTUP = open RCT = 0 W Ct = 1 nF
25 35 45 55 85 95
0 10 20 30 40 50
THD (%)
Figure 21. THD Reduction with RCTUP and RCT (Vin = 265 Vac 50 Hz)
Pout (W)
65 75
DRV Pulse Skipping Begins
RCTUP = 1.5 MW RCT = 365 W Ct = 1.22 nF
efô成/H^EÎm路éFigure 22示/
"#
Figure 22. 100 W Pre-Converter Using the NCP1608 C3
Dboost
Cin
D1
CVcc2
Cbulk + CVcc +
Rdrv
Rs1 U1
NCP1608
ZCD 5
3 Ct GND 6
4 CS
Vcc 8 DRV 7 1 FB
2 Control
Ro1b
Lboost J3
J1 L2
F1
C2
Q1 Daux
Rzcd Bridge
NTC
Rct Rctup1
Rctup2
Ro1a J2
Czcd L1
Dvcc
Ccomp1 Ct1
Rout2a
Ct2
Rout2b Rcs
Ccs Rstart1
R1
Rstart2
Rs3 Rs2 Ddrv C1
Rcomp1 Ccomp
t°
部表(BOM)e$XYI:計算
式Í÷Appendix 123示/"#D%
& HTHD (Figure 23X Y Figure 24)PF (Figure 25)N率(Figure 26)現/
!"# 測V条k行"
#
•
Î最S負荷最¤ 電30T間 -.H後•
}¨温度25°C、[%Ee=、強通気O/•
電 øùTHDPM3000A電 計測V•
6 電HP34401Aú]Z£測V•
6 電流PLZ1003WH電U負荷G用/ 設V•
6 電流HP34401Aú]Z£測V•
6 電 6 電J6 電流h算/ 算6Figure 23. THD vs. Input Voltage Figure 24. Individual Harmonic Current
Vin (Vac) Nth HARMONIC
280 230
180 130
80 0 2 4 6 8 10 12 14
29 25 17
13 9 5 1 0 0.1 0.2 0.3 0.5 0.6 0.7
Figure 25. PF vs. Input Voltage Figure 26. Efficiency vs. Input Voltage
Vin (Vac) Vin (Vac)
290 255
220 185
150 115
80 0.90 0.91 0.92 0.94 0.96 0.97 0.98 1.00
290 255 220
185 150
115 80 90 92 94 96 98 100
THD (%) HARMONIC CURRENT (A)
PF EFFICIENCY (%)
Pout = 50 W
Pout = 100 W
0.93 0.95 0.99
Pout = 50 W
Pout = 100 W
Pout = 50 W Pout = 100 W
0.4
21 33 37
Pin = 75 W 115 Vac 60 Hz 230 Vac 50 Hz
IEC61000−3−2 Class D Limits
31 27 19
15 11 7
3 23 35 39
D>E\`>B
電流J6 電&2%]Figure 27示/"
#Figure 28示JX0無負荷状態%&
起-DJ 過電P護確認
"#NCP1608Vout*421 V達JOVP 障Ã検6/Vout*410 VLJû起-/"
#
Vin (50V/div)
Iin (1A/div)
Vout (10V/div, ac coupled)
Figure 27. Input Current and Output Voltage Ripple (Vin = 115 Vac 60 Hz, Iout = 250 mA)
Figure 28. Startup Transient Showing OVP Detection and Recovery (V = 115 Vac 60 Hz, I = 0 mA) VCC (10V/div)
VDRV (10V/div)
Vout (100V/div)
Vin (100V/div)
gh7ij
}波数応答最¤XY最S 電時J最S6 電 時測V"#Figure 29最¤ 電 時4:[}波数*2 Hzà相®裕*71°
iDJ示/ !"#Figure 30最S 電 時4:[}波数*10 Hzà相®裕*53° iDJ示/ !"#
Figure 29. Frequency Response Vin = 85 Vac 60 Hz Iout = 250 mA
1 10 100
−100
−80
−60
−40
−20 0 20 40 60 80 100
GAIN (dB)
−150
−120
−90
−60
−30 0 30 60 90 120 150
PHASE (degrees)
FREQUENCY (Hz)
Figure 30. Frequency Response Vin = 265 Vac 50 Hz Iout = 250 mA
1 100
−100
−80
−60
−40
−20 0 20 40 60 80 100
GAIN (dB) PHASE (degrees)
FREQUENCY (Hz) Phase Margin
Phase
Gain
fCROSS
Phase Margin
Phase
Gain
fCROSS 10
−150
−120
−90
−60
−30 0 30 60 90 120 150
kSlmnopqr(FPP)st&
^EÎNCP1608FPP機能証
HbFByJM24E1234 間\Ô(J1)*i0"#Figure 31示JX 0 電 ¯°ñJ1Ù0Ú/H
sI決/ 1I]"±#
-.rJ1Ù0Ú/HsI^M
I]"(Figure 32)#J1FPP機能確認目 的用意 X0製造H(:<=
設"±#
Figure 31. Startup with Jumper Removed (Vin = 265 Vac 50 Hz, Iout = 0 mA) Vin (100V/div)
VCC (5V/div)
VDRV (5V/div)
Vout (100V/div)
No DRV Pulses
^EÎTHDL減"H消費電 L減H b構成"#Table 3構成結果示/"
#
Table 3. DEMONSTRATION BOARD CONFIGURATION RESULTS
RCTUP
Ct (RCT = 0 W)
Shutdown Power Dissipation (VFB = 0 V) (Vin = 265 Vac 50 Hz)
Efficiency (Pout = 100 W) THD (Pout = 100 W) 115 Vac
60 Hz
230 Vac 50 Hz
115 Vac 60 Hz
230 Vac 50 Hz
open 1 nF 224 mW 93.5% 95.7% 8.4% 12.5%
1.5 MW 1.22 nF 294 mW 93.5% 95.5% 4.4% 6.2%
uvwx
FPP機能FBy*状態OHJ (:<=P護DJ目的J/ !"
\ÔÙ0ÚJ注意*必要#
ジャンパを取り外した状態では、ジャンパ・ピンに どのワイヤも取り付けないでください。FBy3 ü接続JÍy過§OFã*結
"#D0FPP*正/@-./O@O 06 最S電 *送+"#D0 Cbulk過§O電*¯°Á能性*i0"#
ジャンパを取り外すときは必ず、適切な安全メガネ を装着してください。
\Ô高部隣配置 ! -.r素手f非絶縁金ýþÿÙ0ÚO!
@!#
;-yz{,|}~
:2Zz電源e$時部配置 慎重検討/O«O0"±#高電XY S電流0発生/HFãNCP1608y 結XÍ*i0"#Ñ 従R«過§OÈ2%&zÁ能性減+D J*"#
1.部NCP1608近@配 置/"#
a. ^_Ct
b. VCC^È2%&zE^_
c. Controly補部
2.特高電流]%用abe:長 最短/"#
3.高電流接続幅広!e:G用/"
#
4.電源zJ²³z間単q点 z接続G用/"#
*験^EÎ
部装用*設 i0"#
1. CCS:CSy^È2%&zE^_
追°Hb
2. CZCD:ZCDy^È2%&zE^
_追°Hb
3. DDRV:Q1高速[用9[
追°Hb
4. DVCC:4%VCC9[追°
Hb
5. ROUT2B:0正確O6 電*得+
抵抗追°Hb
6. RS3:0正確O94Ey4電流
限行"H電流:抵抗°熱緩 Ð抵抗追°Hb
c\汎用 電100 WI:E
Õ\G用/ 設計 !"#D
NCP1608G用/ 装"# 電
範¨B6 電 *100 WJPFTHD N率Í÷0.97超8%未満92%超#
電 75 WsIEC61000−3−2
Class D限界準拠/"#測V
à相®裕*50°超R 電範¨BH
AV/ -./"#最後過電P護XY
<Mz端UP護機能*過§O6 電発生 /O!P護/"#
^EÎNCP1608機能J柔軟性証
設計 !"#D設計Ñ 過¦5!`O製造E製.X性能 P証CCi0"±#