Power Factor Corrected LED Driver with Primary Side CC/CV Product Preview NCL30488B

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Power Factor Corrected LED Driver with Primary Side CC/CV

Product Preview NCL30488B

The NCL30488B is a power factor corrected flyback controller targeting isolated constant current LED drivers. The controller operates in a quasi−resonant mode to provide high efficiency. Thanks to a novel control method, the device is able to tightly regulate a constant LED current from the primary side. This removes the need for secondary side feedback circuitry, its biasing and for an optocoupler.

The device is highly integrated with a minimum number of external components. A robust suite of safety protection is built in to simplify the design.

Features

•

High Voltage Startup

•

Quasi−resonant Peak Current−mode Control Operation

•

Primary Side Feedback

•

CC / CV Accurate Control Vin up to 320 V rms

•

Tight LED Constant Current Regulation of ±2% Typical

•

Digital Power Factor Correction

•

Cycle by Cycle Peak Current Limit

•

Wide Operating V_CC Range

•

−40 to + 125°C

•

Standby Mode

•

Robust Protection Features

♦ Brown−Out

♦ OVP on VCC

♦ Constant Voltage / LED Open Circuit Protection

♦ Winding Short Circuit Protection

♦ Secondary Diode Short Protection

♦ Output Short Circuit Protection

♦ Thermal Shutdown

♦ Line over Voltage Protection

•

This is a Pb−Free Device Typical Applications

•

Integral LED Bulbs

•

LED Power Driver Supplies

•

LED Light Engines

This document contains information on a product under development. onsemi reserves the right to change or discontinue this product without notice.

L30488XX ALYWX

G 1

8

SOIC−7 CASE 751U

See detailed ordering and shipping information on page 26 of this data sheet.

ORDERING INFORMATION MARKING DIAGRAM

L30488 = Specific Device Code XX = Version

A = Assembly Location L = Wafer Lot

YW = Assembly Start Week G = Pb−Free Package

PIN CONNECTIONS

1

2

3

4

6

5 8

CS ZCD

GND DRV

HV

VCC COMP

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Figure 1. Typical Application Schematic for NCL30488B .

.

NCL30488

1 2 3

4 5

6 7

PIN FUNCTION DESCRIPTION NCL30488B

Pin N5 Pin Name Function Pin Description

1 COMP OTA output for CV loop This pin receives a compensation network (capacitors and resistors) to stabilize the CV loop

2 ZCD Zero crossing Detection

V_aux sensing This pin connects to the auxiliary winding and is used to detect the core reset event.

This pin also senses the auxiliary winding voltage for accurate output voltage control.

3 CS Current sense This pin monitors the primary peak current.

4 GND − The controller ground

5 DRV Driver output The driver’s output to an external MOSFET

6 VCC Supplies the controller This pin is connected to an external auxiliary voltage.

7 NC creepage

8 HV High Voltage sensing This pin connects after the diode bridge to provide the startup current and internal high voltage sensing function.

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INTERNAL CIRCUIT ARCHITECTURE

Figure 2. Internal Circuit Architecture NCL30488B

Leading Edge Blanking

Power factor and Constant−current control Zero crossing detection Logic

(

ZCD blanking, Time−Out, ...) Aux . Winding Short Circuit Prot.

Constant Voltage Control

Valley Selection Frequency foldback VCV

VREFX VVS

Max. Peak Current Limit COMP

CS

CS Short Protection Winding / Output diode

SCP

Maximum on−time

Driver and Clamp Line DRV

feed−forward Q_drv VHVdiv

Aux_SCP Slow_OVP

Fast_OVP

Slow_OVP

Ipk_max

STOP

WOD_SCP

CS_short

HV Brown−out

Line OVP VHVdiv

BO_NOK

VHVdiv

STOP

VCC Management Fault

Management

Thermal Shutdown

VCC

VCC OVP UVLO

OFF

VCC_OVP Fast_OVP

Aux_SCP

STOP

CS_short

GND

Q_drv S

R Q Q

HV Startup

Standby ZCD

Standby

CS_reset VREFX

L_OVP L_OVP

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MAXIMUM RATINGS TABLE

Symbol Rating Value Unit

VCC(MAX)

I_CC(MAX) Maximum Power Supply Voltage, VCC Pin, Continuous Voltage

Maximum Current for VCC Pin −0.3 to 30

Internally limited V mA V_DRV(MAX)

I_DRV(MAX) Maximum Driver Pin Voltage, DRV Pin, Continuous Voltage

Maximum Current for DRV Pin −0.3, V_DRV (Note 1)

−300, +500 V mA V_HV(MAX)

IHV(MAX)

Maximum Voltage on HV Pin

Maximum Current for HV Pin (dc Current Self−limited if Operated within the Allowed Range) −0.3, +700

±20 V

mA V_MAX

I_MAX Maximum Voltage on Low Power Pins (Except Pins DRV and VCC)

Current Range for Low Power Pins (Except Pins DRV and VCC) −0.3, 5.5 (Note 2)

−2, +5 V

mA

R_qJ−A Thermal Resistance Junction−to−Air 200 °C/W

T_J(MAX) Maximum Junction Temperature 150 °C

Operating Temperature Range −40 to +125 °C

Storage Temperature Range −60 to +150 °C

ESD Capability, HBM Model Except HV Pin (Note 3) 4 kV

ESD Capability, HBM Model HV Pin 1.5 kV

ESD Capability, CDM Model (Note 3) 1 kV

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. VDRV is the DRV clamp voltage VDRV(high) when VCC is higher than VDRV(high). VDRV is VCC otherwise.

2. This level is low enough to guarantee not to exceed the internal ESD diode and 5.5 V ZENER diode. More positive and negative voltages can be applied if the pin current stays within the −2 mA / 5 mA range.

3. This device series contains ESD protection and exceeds the following tests: Human Body Model 4000 V per Mil−Std−883, Method 3015.

Charged Device Model 1000 V per JEDEC Standard JESD22−C101D.

4. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.

ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values T_J = 25°C, V_CC = 12 V, V_ZCD = 0 V, V_CS = 0 V. For min/max values T_J = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V)

Parameter Test Condition Symbol Min Typ Max Unit

HIGH VOLTAGE SECTION

High Voltage Current Source V_CC = V_CC(on) – 200 mV I_HV(start2) 3.4 4.6 6.2 mA

High Voltage Current Source V_CC = 0 V I_HV(start1) − 300 − mA

V_CC Level for I_HV(start1) to I_HV(start2) Transition V_CC(TH) − 0.8 − V

Minimum Startup Voltage V_CC = 0 V V_HV(MIN) − 15 − V

HV Source Leakage Current V_HV = 450 V I_HV(leak) − 4.5 10 mA

Maximum Input Voltage (rms) for Correct Operation of

the PFC Loop V_HV(OL) 320 − − V rms

SUPPLY SECTION Supply Voltage Startup Threshold

Minimum Operating Voltage Hysteresis VCC(on) – VCC(off)

Internal Logic Reset

V_CC increasing V_CC decreasing VCC decreasing

V_CC(on) V_CC(off) VCC(HYS)

V_CC(reset) 9.316 7.64

10.218

−5

10.720

−6 V

Over Voltage Protection

VCC OVP Threshold V_CC(OVP) 25 26.5 28 V

V_CC(off) Noise Filter (Note 5)

VCC(reset) Noise Filter (Note 5) t_VCC(off)

tVCC(reset)

−− 5

20 −

− ms

Supply Current Device Disabled/Fault

Device Enabled/No Output Load on Pin 5 Device Switching (F_sw = 65 kHz) Device switching (F_sw = 700 Hz)

V_CC > V_CC(off) F_sw = 65 kHz

C_DRV = 470 pF, F_sw = 65 kHz V_COMP ≤ 0.9 V

I_CC1 I_CC2 I_CC3 I_CC4

1.1–

−− 1.43.3 3.61.7

1.73.9 4.32

mA

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ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values T_J = 25°C, VCC = 12 V, V_ZCD = 0 V, V_CS = 0 V. For min/max values T_J = −40°C to +125°C, Max T_J = 150°C, V_CC = 12 V) (continued)

CURRENT SENSE

Maximum Internal Current Limit V_ILIM 1.28 1.40 1.50 V

Leading Edge Blanking Duration for V_ILIM t_LEB 240 300 360 ns

Propagation Delay from Current Detection to Gate

Off−state t_ILIM − 50 150 ns

Maximum On−time OPN1 t_on(MAX)1 10.5 14.0 17.5 ms

Maximum On−time OPN2 ton(MAX)2 16 20 24 ms

Maximum On−time V_REFX < 0.15 V (OPN1) t_on(MAX)12 5.3 7.0 8.7 ms

Maximum On−time VREFX < 0.15 V (OPN2) ton(MAX)22 8 10 12 ms

Threshold for Immediate Fault Protection Activation

(140% of VILIM) VCS(stop) 1.9 2.0 2.1 V

Leading Edge Blanking Duration for V_CS(stop) t_BCS − 170 − ns

Current Source for CS to GND Short Detection I_CS(short) 400 500 600 mA

Current Sense Threshold for CS to GND Short Detection V_CS rising V_CS(low) 20 60 90 mV Maximum Peak Current in Standby Mode

Option 1 Option 2 Option 3

V_CS(SBY) 342297 252

380330 280

418363 308

mV

GATE DRIVE Drive Resistance DRV Sink

DRV Source RSNK

R_SRC −

− 13

30 −

− W Drive Current Capability

DRV Sink (Note GBD)

DRV Source (Note GBD) I_SNK

I_SRC −

− 500

300 −

− mA

Rise Time (10% to 90%) C_DRV= 470 pF t_r – 30 − ns

Fall Time (90 % to 10%) C_DRV= 470 pF t_f – 20 − ns

DRV Low Voltage V_CC = V_CC(off)+0.2 V

CDRV = 470 pF, RDRV = 33 kW V_DRV(low) 8 – − V

DRV High Voltage V_CC = V_CC(MAX)

C_DRV= 470 pF, R_DRV= 33 kW V_DRV(high) 10 12 14 V ZERO VOLTAGE DETECTION CIRCUIT

Upper ZCD Threshold Voltage V_ZCD rising VZCD(rising) − 90 150 mV

Lower ZCD Threshold Voltage V_ZCD falling VZCD(falling) 35 55 − mV

Threshold to Force V_REFX Maximum During Startup V_ZCD falling V_ZCD(start) − 0.7 − V

ZCD Hysteresis V_ZCD(HYS) 15 − − mV

Propagation Delay from Valley Detection to DRV High V_ZCD decreasing t_ZCD(DEM) − − 150 ns

Equivalent Time Constant for ZCD Input (GBD) t_PAR − 20 − ns

Blanking Delay After On−time (Option 1) V_REFX > 0.35 V tZCD(blank1) 1.1 1.5 1.9 ms Blanking Delay After On−time (Option 2) V_REFX > 0.35 V tZCD(blank1) 0.75 1.0 1.25 ms Blanking Delay at Light Load (Option 1) V_REFX < 0.25 V tZCD(blank2) 0.6 0.8 1.0 ms Blanking Delay at Light Load (Option 2) V_REFX < 0.25 V tZCD(blank2) 0.45 0.6 0.75 ms

Timeout after Last DEMAG Transition t_TIMO 5 6.5 8 ms

Time−out after Last DEMAG Transition V_ZCD < V_ZCD(start)

(Note 5) t_TIMOstart − 50 − ms

Pulling−down Resistor VZCD = VZCD(falling) RZCD(pd) − 200 − kW

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CONSTANT CURRENT CONTROL

Reference Voltage T_j = 25°C − 85°C V_REF/3 327.9 334.2 341.2 mV

Reference Voltage T_j = −40°C to 125°C V_REF/3 324.1 334.2 346.0 mV

Current Sense Lower Threshold for Detection of the

Leakage Inductance Reset Time V_CS falling V_CS(low) 20 50 100 mV

Blanking Time for Leakage Inductance Reset Detection t_CS(low) − 120 − ns

POWER FACTOR CORRECTION

Clamping Value for V_REF(PFC) T_J = 0°C to 125°C VREF(PFC)CLP 2.06 2.2 2.34 V

Line Range Detector for PFC Loop VHV increases VHL(PFC) − 240 − V dc

Line Range Detector for PFC Loop VHV decreases VLL(PFC) − 230 − V dc

CONSTANT VOLTAGE SECTION

Internal Voltage Reference for Constant Voltage

Regulation VREF(CV) 3.41 3.52 3.63 V

CV Error Amplifier Gain G_EA 40 50 60 mS

Error Amplifier Current Capability V_REFX= V_REF (no dimming) I_EA − ±60 − mA

COMP Pin Lower Clamp Voltage V_CV(clampL) − 0.6 − V

COMP Pin Higher Clamp Voltage T_J = 0°C to 125°C V_CV(clampH) 4.05 4.12 4.25 V

COMP Pin Higher Clamp Voltage T_J = −40°C to 125°C V_CV(clampH) 4.01 4.12 4.25 V Internal ZCD Voltage below which the CV OTA is Boosted V_REF(CV)* 85% V_boost(CV) 2.796 2.975 3.154 V Threshold for Releasing the Boost V_REF(CV)* 90% Vboost(CV)RST 2.96 3.15 3.34 V

Error Amplifier Current Capability During Boost Phase I_EAboost − ±140 − mA

ZCD OVP 1^st Level (Slow OVP) Option 1 V_REF(CV)* 115% V_OVP1 3.783 4.025 4.267 V ZCD Voltage at which Slow OVP is Exit (Option 1) V_REF(CV)* 105% V_OVP1rst − 3.675 − V

Switching Period During Slow OVP T_sw(OVP1) − 1.5 − ms

ZCD Fast OVP Option 1 V_ref(CV)* 125% + 150 mV V_OVP2 4.253 4.525 4.797 V

Number of Switching Cycles before Fast OVP

Confirmation T_{OVP2_CNT} − 4 −

Duration for Disabling DRV Pulses During ZCD Fast OVP Trecovery − 4 − s

COMP Pin Voltage below which Standby Mode is

Entered (Note 5) VCOMP decreasing VCMP(SBY) − 0.895 − V

COMP Standby Comparator Hysteresis (Note 5) V_COMP increasing VCMP(SBY)HYS − 18 − mV

COMP Pin Internal Pullup Resistor (SSR Option) R_pullup − 15 − kW

LINE FEED FORWARD

V_HV to I_CS(offset) Conversion Ratio K_LFF 0.189 0.21 0.231 mA/V

Offset Current Maximum Value V_HV > (450 V or 500 V) Ioffset(MAX) 76 95 114 mA

Line Feed−forward Current DRV high, V_HV= 200 V I_FF 35 40 45 mA

VALLEY LOCKOUT SECTION

Threshold for Line Range Detection V_HV Increasing (1^st to 2^nd Valley Transition for V_REFX > 80% V_REF) (Prog. Option: 1^st to 3^rd Valley Transition)

V_HV increases V_HL 228 240 252 V

Threshold for Line Range Detection V_HV Decreasing (2^nd to 1^st Valley Transition for VREFX > 80% VREF) (Prog. Option: 3^rd to 1^st Valley Transition)

V_HV decreases V_LL 218 230 242 V

Blanking Time for Line Range Detection t_HL(blank) 15 25 35 ms

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VALLEY LOCKOUT SECTION Valley Thresholds

1^st to 2^nd Valley Transition at LL and 2^nd to 3^rd Valley HL, VREF Decr. (Prog. Option: 3^rd to 4^th Valley HL)

2^nd to 1^st Valley Transition at LL and 3^rd to 2^nd Valley HL, V_REF Incr. (Prog. Option: 4^th to 3^rd Valley HL)

2^nd to 3^rd Valley Transition at LL and 3^rd to 4^th Valley HL, V_REF Decr. (Prog. Option: 4^th to 5^th Valley HL)

3^rd to 2^nd Valley Transition at LL and 4^th to 3^rd Valley HL, VREF Incr. (Prog. Option: 5^th to 4^th Valley HL)

3^rd to 4^th Valley Transition at LL and 4^th to 5^th Valley HL, V_REF Decr. (Prog. Option: 5^th to 6^th Valley HL)

4^th to 3^th Valley Transition at LL and 5^th to 4^th Valley HL, V_REF Incr. (Prog. Option: 6^th to 5^th Valley HL)

4^th to 5^th Valley Transition at LL and 5^th to 6^th Valley HL, V_REF Decr. (Prog. Option: 6^th to 7^th Valley HL)

5^th to 4^th Valley Transition at LL and 6^th to 5^th Valley HL, V_REF Incr. (Prog. Option: 7^th to 6^th Valley HL)

V_REF decreases V_REF increases VREF decreases V_REF increases V_REF decreases VREF increases V_REF decreases V_REF increases

V_{VLY1−2/2−3} V_{VLY2−1/3−2} VVLY2−3/3−4

V_{VLY3−2/4−3} V_{VLY3−4/4−5} VVLY4−3/5−4

V_{VLY4−5/5−6} V_{VLY5−4/6−5}

−

0.80 0.90 0.65 0.75 0.50 0.60 0.35 0.45

−

− V

V_REF Value at which the FF Mode is Activated V_REF decreases V_FFstart − 0.25 − V V_REF Value at which the FF Mode is Removed V_REF increases V_FFstop − 0.35 − V FREQUENCY FOLDBACK

Added Deadc time (Note 5) V_REFX = 0.25 V t_FF1LL − 2 − ms

Added Dead Time (Note 5) V_REFX = 0.08 V t_FFchg − 35 − ms

Dead−time Clamp (Option 1) (Note 5) V_REFX < 3 mV t_FFend1 − 687 − ms

Dead−time Clamp (Option 2) (Note 5) V_REFX < 11.2 mV t_FFend2 − 250 − ms

Minimum Added Dead−time in Standby (Note 5) V_REFX = 0 t_DT(min)SBY − 640 − ms

Maximum Added Dead−time in Standby (Option 2)

(Note 5) V_REFX = 0, V_COMP < 0.7 V tDT(max)SBY2 − 1.8 − ms

V_REFX Threshold below which Valley Synchronization in

Frequency Foldback is Turned Off (Note 5) V_REFX decreasing V_REFXsyncD 0.14 0.15 0.16 V V_REFX Threshold above which Valley Synchronization in

Frequency Foldback is Turned On (Note 5) V_REFX increasing V_REFXsyncI 0.165 0.18 0.195 V FAULT PROTECTION

Thermal Shutdown (Note 5) Device switching (FSW around

65 kHz) TSHDN 130 150 170 °C

Thermal Shutdown Hysteresis T_SHDN(HYS) − 20 – °C

Threshold Voltage for Output Short Circuit or Aux.

Winding Short Circuit Detection V_ZCD(short) 0.6 0.65 0.7 V

Short Circuit Detection Timer VZCD < VZCD(short) tOVLD 70 90 110 ms

Auto−recovery Timer trecovery 3 4 5 s

Line OVP Threshold VHV increasing VHV(OVP) 457 469 485 V dc

HV Pin Voltage at which Line OVP is Reset VHV decreasing VHV(OVP)RST 430 443 465 V dc

Blanking Time for Line OVP Reset TLOVP(blank) 210 340 470 ms

BROWN−OUT AND LINE SENSING

Brown−Out ON level (IC Start Pulsing) V_HV increasing V_HVBO(on) 101.5 108 114.5 V dc Brown−Out ON Level (IC Start Pulsing) Option 2 VHV increasing VHVBO(on)2 129.7 138 146.3 V dc Brown−Out OFF Level (IC Stops Pulsing) V_HV decreasing V_HVBO(off) 92 99 106 V dc Brown−Out OFF Level (IC Stops Pulsing) Option 2 V_HV decreasing V_HVBO(off)2 121 129 137 V dc HV Pin Voltage above which the Sampling of ZCD is

Enabled Low Line V_HVdecreasing, low line V_sampENLL − 55 − V

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BROWN−OUT AND LINE SENSING

HV Pin Voltage above which the Sampling of ZCD is

Enabled Highline VHV decreasing, highline VsampENHL − 105 − V

ZCD Sampling Enable Comparator Hysteresis V_HV increasing V_sampHYS − 5 − V

BO Comparators Delay t_BO(delay) − 30 − ms

Brown−Out Blanking Time t_BO(blank) 15 25 35 ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Guaranteed by design.

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TYPICAL CHARACTERISTICS

Figure 3. I_HV(start2) vs. Temperature Figure 4. I_HV(start1) vs. Temperature

Figure 5. V_CC(on) vs. Temperature Figure 6. V_CC(off) vs. Temperature

Figure 7. V_CC(OVP) vs. Temperature Figure 8. I_CC1 vs. Temperature IHV(start2) (mA)

TEMPERATURE (°C)

VCC(on) (V) IHV(start1) (mA)

TEMPERATURE (°C)

VCC(off) (V)

VCC(OVP) (V) ICC1 (mA)

TEMPERATURE (°C) TEMPERATURE (°C)

4 4,1 4,2 4,3 4,4 4,5 4,6 4,7 4,8 4,9

−50 −25 0 25 50 75 100 125 266

271 276 281 286 291 296

−50 −25 0 25 50 75 100 125

−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125

18,22 18,23 18,24 18,25 18,26 18,27 18,28 18,29 18,3 18,31

10,168 10,173 10,178 10,183 10,188 10,193 10,198 10,203 10,208 10,213 10,218

26,79 26,81 26,83 26,85 26,87 26,89 26,91

1,33 1,35 1,37 1,39 1,41 1,43 1,45 1,47

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TYPICAL CHARACTERISTICS (continued)

1,685

Figure 9. I_CC4 vs. Temperature Figure 10. t_FF1LL vs. Temperature

Figure 11. V_HV(OL) vs. Temperature Figure 12. VREF(PFC)CLP vs. Temperature

Figure 13. V_ILIM vs. Temperature Figure 14. V_CS(low)F vs. Temperature ICC4 (mA)

TEMPERATURE (°C)

VHV(OL) (V) tFF1LL (ms)

TEMPERATURE (°C)

VREF(PFC)CLP) (V)

VILIM (V) VCS(low)F (mV)

−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125

1,695 1,705 1,715 1,725 1,735 1,745 1,755 1,765

1,0415 1,0425 1,0435 1,0445 1,0455 1,0465 1,0475 1,0485 1,0495 1,0505

2,164 2,169 2,174 2,179 2,184 2,189 2,194 2,199 2,204 2,209 2,214

350 351 352 353 354 355 356 357 358

1,3635 1,3655 1,3675 1,3695 1,3715 1,3735 1,3755

50,2 50,7 51,2 51,7 52,2 52,7 53,2 53,7 54,2

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376

Figure 15. V_CS(stop) vs. Temperature Figure 16. VCS(SBY)_opn1 vs. Temperature

Figure 17. VCS(SBY)_opn2 vs. Temperature Figure 18. VCS(SBY)_opn3 vs. Temperature

Figure 19. t_on(MAX)1 vs. Temperature Figure 20. t_on(MAX)2 vs. Temperature VCS(stop) (V)

TEMPERATURE (°C)

VCS(SBY)_opn2 (mV) VCS(SBY)_opn1 (mV)

TEMPERATURE (°C)

VCS(SBY)_opn3 (mV)

ton(MAX)1 (ms) ton(MAX)2 (ms)

−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125

1,995 1,996 1,997 1,998 1,999 2 2,001 2,002 2,003 2,004 2,005

376,5 377 377,5 378 378,5 379

325,6 326,6 327,6 328,6 329,6 330,6

276,2 276,7 277,2 277,7 278,2 278,7 279,2 279,7 280,2

13,8 13,85 13,9 13,95 14 14,05 14,1

19,8 19,85 19,9 19,95 20 20,05 20,1

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176

Figure 21. t_LEB vs. Temperature Figure 22. t_BCS vs. Temperature

Figure 23. t_ILIM vs. Temperature Figure 24. R_SNK vs. Temperature

Figure 25. R_SRC vs. Temperature Figure 26. t_r vs. Temperature tLEB (ns)

TEMPERATURE (°C)

tILIM (ns) tBCS (ns)

TEMPERATURE (°C)

RSNK (W)

RSRC (W) tr (ns)

−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125

292 294 296 298 300 302 304 306 308 310

177 178 179 180 181 182 183

37 39 41 43 45 47 49

3 4 5 6 7 8 9 10 11

2 7 12 17 22

19 21 23 25 27 29 31 33 35 37

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12 14 16 18 20 22

55,4 55,9 56,4 56,9 57,4

76 81 86 91 96 101 106 111 116 121

Figure 27. t_f vs. Temperature Figure 28. VZCD(rising) vs. Temperature

Figure 29. VZCD(falling) vs. Temperature Figure 30. V_ZCD(short) vs. Temperature

Figure 31. t_ZCD(DEM) vs. Temperature Figure 32. tZCD(blank1)OPN1 vs. Temperature tf (ns)

TEMPERATURE (°C)

VZCD(falling) (mV) VZCD(rising) (mV)

TEMPERATURE (°C)

VZCD(short) (V)

tZCD(DEM) (ns) tZCD(blank1)OPN1 (ms)

−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125

85,7 85,8 85,9 86 86,1 86,2

0,6605 0,6615 0,6625 0,6635 0,6645 0,6655 0,6665 0,6675 0,6685

1,56 1,57 1,58 1,59 1,6 1,61 1,62 1,63

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0,836 0,841 0,846 0,851 0,856 0,861 0,866 0,871 0,876

6,795 6,815 6,835 6,855 6,875 6,895

Figure 33. tZCD(blank1)OPN2 vs. Temperature Figure 34. tZCD(blank1)OPN1 vs. Temperature

Figure 35. tZCD(blank2)OPN2 vs. Temperature Figure 36. t_TIMO vs. Temperature

Figure 37. V_REF/3 vs. Temperature tZCD(blank1)OPN2 (ms)

TEMPERATURE (°C)

tZCD(blank2)OPN2 (ms) tZCD(blank2)OPN1 (ms)

TEMPERATURE (°C)

tTIMO (ms)

VREF/3 (mV)

TEMPERATURE (°C)

−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125

−50 −25 0 25 50 75 100 125

1,044 1,049 1,054 1,059 1,064 1,069 1,074 1,079 1,084

0,564 0,569 0,574 0,579 0,584

337 337,5 338 338,5 339 339,5 340 340,5 341

Figure 38. V_REF(CV) vs. Temperature VREF(CV) (V)

TEMPERATURE (°C)

−50 −25 0 25 50 75 100 125

3,488 3,493 3,498 3,503 3,508 3,513 3,518 3,523 3,528

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Figure 39. V_CV(clampL) vs. Temperature Figure 40. V_CV(clampH) vs. Temperature

Figure 41. R_pullup vs. Temperature 603,5

605,5 607,5 609,5 611,5 613,5 615,5

4,008 4,018 4,028 4,038 4,048 4,058

Figure 42. V_OVP1 vs. Temperature

Figure 43. V_OVP2 vs. Temperature

VCV(clampL) (mV) VCV(clampH) (V)VOVP1 (V)

VOVP2 (V)

TEMPERATURE (°C)

−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125

−50 −25 0 25 50 75 100 125

4,096 4,101 4,106 4,111 4,116 4,121

4,509 4,514 4,519 4,524 4,529 Rpullup (kW)

TEMPERATURE (°C)

−50 −25 0 25 50 75 100 125

15,12 15,17 15,22 15,27 15,32 15,37 15,42 15,47 15,52

0,2024 0,2034 0,2044 0,2054 0,2064 0,2074

Figure 44. K_LFF vs. Temperature KLFF (mA/V)

TEMPERATURE (°C)

−50 −25 0 25 50 75 100 125

(16)

40 40,2 40,4 40,6 40,8 41 41,2 41,4 41,6

439,4 439,9 440,4 440,9 441,4 441,9 442,4 442,9 443,4 443,9

Figure 45. Ioffset(MAX) vs. Temperature Figure 46. I_FF vs. Temperature

Figure 47. V_HV(OVP) vs. Temperature Figure 48. V_HV(OVP)RST vs. Temperature

Figure 49. V_HVBO(on)1 vs. Temperature

IFF (mA) Ioffset(MAX) (mA)

TEMPERATURE (°C)

VHV(OVP) (V dc) VHV(OVP)RST (V dc)

VHVBO(on)1 (V dc)

TEMPERATURE (°C)

−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125

−50 −25 0 25 50 75 100 125

99,2 99,7 100,2 100,7 101,2 101,7 102,2 102,7

465,2 465,7 466,2 466,7 467,2 467,7 468,2 468,7 469,2 469,7 470,2

107,25 107,35 107,45 107,55 107,65 107,75 107,85 107,95 108,05 108,15

98,25 98,35 98,45 98,55 98,65 98,75 98,85 98,95 99,05 99,15

Figure 50. V_HVBO(off)1 vs. Temperature VHVBO(off)1 (V dc)

TEMPERATURE (°C)

−50 −25 0 25 50 75 100 125