MOSFET – N-Channel, POWERTRENCH)

MOSFET – N-Channel, POWERTRENCH ⁾

80 V

FDC3512

General Description

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R

and fast switching speed.

Features

• 3.0 A, 80 V

♦

R

= 77 m W @ V

= 10 V

♦

R

= 88 m W @ V

= 6 V

• High Performance Trench Technology for Extremely Low R

• Low Gate Charge (13 nC Typical)

• High Power and Current Handling Capability

• Fast Switching Speed

• This Device is Pb−Free, Halide Free and is RoHS Compliant

• DC/DC Converter

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)

Symbol Parameter Ratings Unit

V_DSS Drain−Source Voltage 80 V

V_GSS Gate−Source Voltage ±20 V

I_D Drain Current Continuous (Note 1a) 3.0 A

Pulsed 20

P_D Maximum Power Dissipation

(Note 1a) 1.6 W

(Note 1b) 0.8

T_J, T_STG Operating and Storage Junction Temperature Range

−55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Ratings Unit

RqJA Thermal Resistance,

Junction−to−Ambient (Note 1a)

78 °C/W

RqJC Thermal Resistance, 30 °C/W

MARKING DIAGRAM

See detailed ordering and shipping information on page 5 of this data sheet.

ORDERING INFORMATION D

TSOT23 6−Lead (SUPERSOTt−6)

CASE 419BL

352 M 1

352 = Device Code M = Date Code

DG D DS

PIN CONNECTION

6 5 4 1

2 3

V_DSS R_DS(ON) MAX I_D MAX 80 V 77 mW @ 10 V 3.0 A

88 mW @ 6 V

ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

DRAIN−SOURCE DIODE AVALANCHE RATINGS (Note 2)

W_DSS Drain–Source Avalanche Energy Single Pulse, V_DD = 40 V, I_D = 3.0 A − − 90 mJ

I_AR Drain–Source Avalanche Current − − 3.0 A

OFF CHARACTERISTICS

BV_DSS Drain–Source Breakdown Voltage V_GS = 0 V, I_D = 250 mA 80 − − V

DBV_DSS DT_J

Breakdown Voltage Temperature Coefficient

I_D = 250 mA, Referenced to 25°C − 80 − mV/°C

I_DSS Zero Gate Voltage Drain Current V_DS = 64 V, V_GS = 0 V − − 1 mA

I_GSSF Gate–Body Leakage, Forward V_GS = 20 V, V_DS = 0 V − − 100 nA

I_GSSR Gate–Body Leakage, Reverse V_GS = –20 V, V_DS = 0 V − − –100 nA

ON CHARACTERISTICS (Note 2)

V_GS(th) Gate Threshold Voltage V_DS = V_GS, I_D = 250 mA 2 2.4 4 V

DV_GS(th) DT_J

Gate Threshold Voltage Temperature Coefficient

I_D = 250 mA, Referenced to 25_C − –6 − mV/°C

R_DS(on) Static Drain–Source On Resistance V_GS = 10 V, I_D = 3.0 A V_GS = 6.0 V, I_D = 2.8 A

V_GS = 10 V, I_D = 3.0 A, T_J = 125_C

−

−

−

56 61 97

77 88 141

mW

I_D(on) On–State Drain Current V_GS = 10 V, V_DS = 5 V 10 − − A

g_FS Forward Transconductance V_DS = 10 V, I_D = 3.0 A − 14 − S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS = 40 V, V_GS = 0 V, f = 1.0 MHz − 634 − pF

C_oss Output Capacitance − 58 − pF

C_rss Reverse Transfer Capacitance − 28 − pF

SWITCHING CHARACTERISTICS (Note 2)

t_d(on) Turn–On Delay Time V_DD = 40 V, I_D = 1 A, V_GS = 10 V,

R_GEN = 6 W − 7 14 ns

t_r Turn–On Rise Time − 3 6 ns

t_d(off) Turn–Off Delay Time − 24 28 ns

t_f Turn–Off Fall Time − 4 8 ns

Q_g Total Gate Charge V_DS = 40 V, I_D = 3.0 A, V_GS = 10 V − 13 18 nC

Q_gs Gate–Source Charge − 2.4 − nC

Q_gd Gate–Drain Charge − 2.8 − nC

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING

I_S Maximum Continuous Drain–Source Diode Forward Current − − 1.3 A

V_SD Drain–Source Diode Forward Voltage V_GS = 0 V, I_S = 1.3 A (Note 2) − 0.8 1.2 V t_rr Diode Reverse Recovery Time I_F = 3.0 A, d_iF/d_t = 300 A/ms (Note 2) − 28.2 − nS

Q_rr Diode Reverse Recovery Charge − 48 − nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

TYPICAL CHARACTERISTICS

0 5 10 15 20

0 5 0.8

1 1.2 1.4 1.6 1.8

0 5 10 15 20

0.4 0.7 1 1.3 1.6 1.9 2.2

−50 −25 0 25 50 75 100 125 150 0.02

0.06 0.1 0.14 0.18

2 4 6 8

0 5 10 15 20

2 3 4 5

0.0001 0.001 0.01 0.1 1 10

0 0.2 0.4 0.6 0.8 1 1.2

1 2 3 4

10 Figure 1. On−Region Characteristics

ID, DRAIN CURRENT (A)

V_DS, DRAIN−SOURCE VOLTAGE (V)

RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE

T_J, JUNCTION TEMPERATURE (°C) V_GS, GATE TO SOURCE VOLTAGE (V) RDS(ON), ON−RESISTANCE (W)

V_GS, GATE TO SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCEID, DRAIN CURRENT (A)

V_SD, BODY DIODE FORWARD VOLTAGE (V) Figure 2. On−Resistance Variation with

Drain Current and Gate Voltage

Figure 3. On−Resistance Variation with Temperature

Figure 4. On−Resistance Variation with Gate−to−Source Voltage

IS, REVERSE DRAIN CURRENT (A) V_GS= 10 V

V_GS= 4.0 V 4.5 V

10 V 5.0 V

6.0 V

I_D = 3.0 A V_GS = 10 V

I_D = 1.5 A

T_A = 125°C

T_A = 25°C

V_DS = 5 V

T_A = 125°C

25°C

−55°C

V_GS = 0 V

T_A = 125°C 25°C

−55°C 6.0 V

5.0 V

4.0 V 4.5 V

175 2.5

100

TYPICAL CHARACTERISTICS

t₁, TIME (s)

P(pk), PEAK TRANSIENT POWER (W)

VGS, GATE−SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

CAPACITANCE (pF)

−V_DS, DRAIN TO SOURCE VOLTAGE (V)

V_DS, DRAIN−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation

t₁, TIME (s) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

0 2 4 6 8 10

0 9 12 15

0 200 400 600 800 1000

0 20 40 60 80

0.01 0.1 1 100

0.1 1 10 100

0 10 20 30 40

0.001 0.01 0.1 1 10 100 1000

0.001 0.01

0.0001 0.001 0.01 0.1 1 10 100 1000

P(pk) t1

t2

3 6

40 V I_D = 3.0 A

V_DS = 20 V 60 V

f = 1 MHz V_GS = 0 V

CRSS

COSS

CISS

R_DS(ON) LIMIT

V_GS = 10 V SINGLE PULSE R_qJA = 156°C/W T_A = 25°C

100 ms

SINGLE PULSE R_qJA = 156°C/W T_A = 25°C

SINGLE PULSE 0.02

0.05 0.1 0.2 D = 0.5

T_J − T_A = P x R_qJA(t) Duty Cycle, D = t₁ / t₂ R_qJA(t) = r(t) + R_qJA

R_qJA = 156°C/W 10

10 ms

DC

1 ms 100 ms 1 s 10 s

50

0.01 1

0.01

PACKAGE MARKING AND ORDERING INFORMATION

Device Device Marking Package Type Reel Size Tape Width Shipping^†

FDC3512 352 TSOT23 6−Lead

(Pb−Free)

7” 8 mm 3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

TSOT23 6−Lead CASE 419BL

ISSUE A

DATE 31 AUG 2020

XXX MG G GENERIC MARKING DIAGRAM*

1

XXX = Specific Device Code M = Date Code

G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking.

(Note: Microdot may be in either location) SCALE 2:1

1

PACKAGE DIMENSIONS

98AON83292G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TSOT23 6−Lead

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