MOSFET – N-Channel, POWERTRENCH)

MOSFET – N-Channel, POWERTRENCH ⁾

80 V, 65 A, 7.5 mW

FDWS86369-F085

Features

• ^{Typ R}

= 5.9 m W at V

= 10 V; I

= 65 A

• ^{Typ Q}

= 35 nC at V

= 10 V; I

= 65 A

• UIS Capability

• Wettable Flanks for Automatic Optical Inspection (AOI)

• AEC−Q101 Qualified

• These Devices are Pb−Free and are RoHS Compliant

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Integrated Starter/Alternator

• Primary Switch for 12 V Systems

MOSFET MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified)

Symbol Parameter Ratings Unit

V_DSS Drain to Source Voltage 80 V

V_GS Gate to Source Voltage ±20 V

I_D Drain Current (T_C = 25°C)

Continuous (V_GS = 10 V) (Note 1)

Pulsed 65

(see Fig.

141)

A

EAS Single Pulse Avalanche Energy

(Note 2) 27 mJ

P_D Power Dissipation

Derate above 25°C 107

0.71 W

W/°C T_J, T_STG Operating and Storage Temperature −55 to +175 °C

R_θJC Thermal Resistance

(Junction to case) 1.4 °C/W

R_θJA Maximum Thermal Resistance

(Junction to Ambient) (Note 3) 50 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Current is limited by bondwire configuration.

2. Starting Tj = 25°C, L = 20 mH, IAS = 52 A, VDD = 80 V during inductor charging and V_DD = 0 V during time in avalanche.

3. R_qJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_qJC is guaranteed by design while R_qJA is determined by the user’s board design. The maximum rating presented

V_DSS R_DS(ON) MAX I_D MAX

80 V 7.5 mW @ 10 V 65 A

MARKING DIAGRAM ELECTRICAL CONNECTION

N−Channel MOSFET

DFNW8 CASE 507AU

Top Bottom

D D

DD

S G

SS

Pin 1

ON

(Note: Microdot may be in either location) AYWWWL

FDWS 86369

A = Assembly Location

Y = Year

WW = Work Week

WL = Assembly Lot

FDWS = Device Code 86369 = Device Code

Device Package Shipping^† ORDERING INFORMATION

FDWS86369−F085 DFNW8 (Power56) (Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

J

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 − − V

I_DSS Drain−to−Source Leakage Current V_DS = 80 V, V_GS = 0 V, T_J = 25°C − − 1 mA VDS = 80 V, VGS = 0 V, TJ = 175°C (Note 4) − − 1 mA

IGSS Gate−to−Source Leakage Current VGS = ±20 V − − ±100 nA

ON CHARACTERISTICS

VGS(th) Gate to Source Threshold Voltage V_GS = V_DS, I_D = 250 mA 2.0 3.0 4.0 V

R_DS(on) Drain to Source On−Resistance ID = 65 A, VGS = 10 V, TJ = 25°C − 5.9 7.5 mW

ID = 65 A, VGS = 10 V, TJ = 175°C (Note 4) − 12.2 15.5 DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 40 V, VGS = 0 V, f = 1 MHz − 2470 − pF

Coss Output Capacitance − 400 −

Crss Reverse Transfer Capacitance − 14 −

R_g Gate Resistance f = 1 MHz − 1.8 − W

Q_g(ToT) Total Gate Charge V_GS = 0 V to 10 V VDD = 64 V, ID = 65 A 35 46 nC

Q_g(th) Threshold Gate Charge V_GS = 0 V to 2 V 4.5

Q_gs Gate−to−Source Gate Charge 12.5

Q_gd Gate−to−Drain “Miller” Charge 8

SWITCHING CHARACTERISTICS

t_on Turn−On Time V_DD = 40 V, I_D = 65 A,

V_GS = 10 V, R_GEN = 6 W − − 39 ns

t_d(on) Turn−On Delay − 15 −

t_r Rise Time − 11 −

t_d(off) Turn−Off Delay − 24 −

t_f Fall Time − 8 −

t_off Turn−Off Time − − 48

DRAIN−SOURCE DIODE CHARACTERISTICS

V_SD Source−to−Drain Diode Voltage I_SD = 65 A, V_GS = 0 V − − 1.4 V

I_SD = 32.5 A, V_GS = 0 V − − 1.2

T_rr Reverse−Recovery Time I_F = 65 A, DISD/Dt = 100 A/ms, VDD = 64 V − 49 74 ns

Q_rr Reverse−Recovery Charge − 44 68 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. The maximum value is specified by design at T_J = 175°C. Product is not tested to this condition in production

TYPICAL CHARACTERISTICS

Figure 1. Normalized Power Dissipation vs.

Case Temperature

Figure 2. Maximum Continuous Drain Current vs.

Case Temperature

T_C, CASE TEMPERATURE (°C) T_C, CASE TEMPERATURE (°C)

Figure 3. Normalized Maximum Transient Thermal Impedance t, RECTANGULAR PULSE DURATION (s)

t, RECTANGULAR PULSE DURATION (s)

POWER DISSIPATION MULTIPLIER ID, DRAIN CURRENT (A)

NORMALIZED THERMAL IMPEDANCE, ZqJCIDM, PEAK CURRENT (A) 0 0.2 0.4 0.6 0.8 1.0

0 25 50 100 125 175

1.2

75 150 25 50 75 100 125 150 175 200

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10¹

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10¹

0 20 40 60 80 100

Current Limited by Package

Current Limited by Silicon

V_GS = 10 V

0.01 0.1 1 2

Single Pulse

10 100 1000

Single Pulse VGS = 10 V D = 0.50 0.20 0.10 0.05 0.02 0.01

Duty Cycle − Descending Order

P_DM

t₁ t₂ Notes:

Duty Factor: D = t1/t2

Peak T_J = P_DM x Z_qJA x R_qJA + T_C

TC = 25°C

For temperatures above 25°C derate peak current as follows:

I+I₂₅

ƪ ^Ǹ

ƫ

1 10 100 500

Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability V_DS, DRAIN−TO−SOURCE VOLTAGE (V) t_AV, TIME IN AVALANCHE (ms)

Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics V_GS, GATE−TO−SOURCE VOLTAGE (V) V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics

VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A)IS, REVERSE DRAIN CURRENT (A)

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

0.1 1 10 0.001 0.1 10

2 0.0 0.6 0.8 1.2

1 2 4

0 0 3 5

0.01 1

5 1

100 100

3 4 6 0.2 0.4 1.0

2 4

ID, DRAIN CURRENT (A)

3

5 1.4

(Note: Refer to onsemi Applications Notes AN7514 and AN7515)

0.01 500 0.1 1 10 100

1000 If R = 0

tAV=(L)(IAS)/(1.3*Rated BVDSS − VDD) If R ≠ 0

tAV=(L/R)In[(IAS*R)/(1.3*Rated BVDSS− VDD)+1]

Starting T_J = 25°C Starting T_J = 150°C

0 50 100 150 200

7 8 9 10

Pulse Duration = 80 ms Duty Cycle = 0.5% Max V_DD = 5 V

T_J = −55°C T_J = 175°C

TJ = 25°C

0.1 1 10 100 200

T_J = 175°C TJ = 25°C V_GS = 0 V

0 50 100 150 200

80 ms Pulse Width TJ = 25°C

VGS

15 V Top 10 V 8 V 7 V 6 V 5.5 V 5 V Bottom

5 V 0

50 100 150

200 80 ms Pulse Width T_J = 175°C

VGS

15 V Top 10 V 8 V 7 V6 V 5.5 V 5 V Bottom

5 V 100 ms

Operation in this area may be limited by R_DS(on)

T_C = 25°C T_J = Max Rated Single Pulse

1 ms 10 ms 100 ms

TYPICAL CHARACTERISTICS

Figure 11. R_DS(on) vs. Gate Voltage Figure 12. Normalized R_DS(on) vs. Junction Temperature

V_GS, GATE−TO−SOURCE VOLTAGE (V) T_J, JUNCTION TEMPERATURE (°C)

Figure 13. Normalized Gate Threshold Voltage vs. Temperature

Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature T_J, JUNCTION TEMPERATURE (°C) T_J, JUNCTION TEMPERATURE (°C)

Figure 15. Capacitance vs. Drain−to−Source Figure 16. Gate Charge vs. Gate−to−Source

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) Q_g, GATE CHARGE (nC)

RDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN−SOURCE ON−RESISTANCE

NORMALIZED GATE THRESHOLD VOLTAGECAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V)

8 −80 0

−80 40 120 160 200

1 10 100

0.1 0

4 10

0 15 30

−40 40

6

5 80

10 200 9

−40 0 7

10 25

2 6 8 NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE

80 120 160

20 0

20 40 60 80 100

Pulse Duration = 80 ms Duty Cycle = 0.5% Max

T_J = 175°C T_J = 25°C I_D = 65 A

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

2.2 Pulse Duration = 80 ms Duty Cycle = 0.5% Max

I_D = 65 A V_GS = 10 V

0.2 0.4 0.6 0.8 1.0 1.2 1.4

−80 −40 0 40 80 120 160 200

0.90 0.95 1.00 1.05 1.10

I_D = 5 mA VGS = VDS

I_D = 250 mA

1 10 100 1000 10000

f = 1 MHz V_GS = 0 V

Ciss

Coss

Crss

35

I_D = 65 A V_DD = 32 V

V_DD = 40 V

V_DD = 48 V

DFNW8 5.2x6.3, 1.27P CASE 507AU

ISSUE A

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