C14H29 C14H29
C14H29 C14H29
C14H29 C14H29
Fig. 1 Okamoto et al.
(C14H29)2-[7]phenacene (C14H29)2-picene
(C14H29)2-[6]phenacene
(a)
Au (50nm) / F4TCNQ (3nm) Si
gate dielectric (SiO2 or ZrO2)
A
A
(b)
Au (50nm) / F4TCNQ (3nm) gate dielectric (bmim[PF6])
Fig. 2 Okamoto et al.
SiO2 (400nm) Si
(C14H29)2-[7]phenacene (C14H29)2-[7]phenacene
Fig. 3 Okamoto et al.
ABS FL
1.0
0.5
)ityedizalmor (nnsAteInL FS,B 0.0
500 400
300
λ / nm
Fig. 4 Okamoto et al.
Intensity(arb.unit)
15 10
5
0 2 (°)
(a)
(b)
001 002 003
Intensity(arb.unit)
40 30
20 2 (°)
002 003
(c)
θ
c*
a, b
Fig. 5 Okamoto et al.
(a) (b)
(c)
-2.7 eV-5.7 eV 3.0 eV
-2.6 eV
-5.7 eV 3.1 eV -2.6 eV
-5.7 eV HOMO
LUMO -2.5 eV
-5.6 eV 3.1 eV Eg = 3.0 eV
3.1 eV
EHOMO = -5.7 eV
Fig. 6 Okamoto et al.
R: C14H29
R
R R
R
R
R
(a)
(c)
001 002 004002 003
Fig. 7 Okamoto et al.
Intensity (arb. unit)
15 10
5
0 2 θ (°)
10 8 6 4 2
003 004
(0, 0) Molecule A
b’
α’ a’
(12,12) Molecule B Molecule A β’A
γ’A
Molecule B β’B
γ’B
-50 mV, Structure 1 2 nm -2.5 V
Structure 2
−1.5 −0.5 0.5 1.5 2.5 Voltage (V)
dI / dV(arbitraryunits)
EF
LUMO
HOMO
Alkyl Chain State
∆E gap = 3.05 eV
(b)
16
12
8
4
0
|ID| 1/2 (µA) 1/2
100 80
60 40 20 0
|VG| (V) 10-11
10-9 10-7 10-5 10-3
|ID| (A)
(a)
90V 80V 70V
0V
(b)
250 200 150 100 50 0
|ID| (µA)
100 80
60 40 20 0
|VD| (V)
|VG| = 100V
Figure 8. Okamoto et al.
4
3
2
1
0
|ID| 1/2 (µA) 1/2
100 80
60 40 20 0
|VG| (V) 10-12
10-10 10-8 10-6 10-4
|ID| (A)
(c) (d)
12 10 8 6 4 2 0
|ID| (µA)
100 80
60 40 20 0
|VD| (V)
90V
80V
0V
|VG| = 100V
(a)
|VG| = 18V 16V 14V
10V
0V
(b)
1.2 1.0 0.8 0.6 0.4 0.2 0.0
|ID| 1/2 (µA) 1/2
15 10
5 0
|VG| (V) 10-14
10-12 10-10 10-8 10-6
|ID| (A)
0.6 0.5 0.4 0.3 0.2 0.1 0.0
|ID| (µA)
15 10
5 0
|VD| (V)
12V
Fig. 9 Okamoto et al.
2.5 2.0 1.5 1.0 0.5 0.0
|ID| (µA)
1.0 0.8 0.6 0.4 0.2 0.0
|VD| (V)
(a)
|VG| =3V 2.8V
0V 2.6V
(b)
3.0 2.5 2.0 1.5 1.0 0.5 0.0
|ID| 1/2 (µA) 1/2
3.0 2.0
1.0 0.0
|VG| (V) 10-8
10-7 10-6 10-5
|ID| (A)
