Field Stop Trench IGBT With Soft Fast Recovery Diode

Soft Fast Recovery Diode

650 V, 120 A

FGY120T65SPD-F085

Features

• Very Low Saturation Voltage : V CE(sat) = 1.5 V(Typ.) @ I C = 120 A

• Maximum Junction Temperature : T J = 175 ^° C

• Positive Temperature Co−efficient

• Tight Parameter Distribution

• High Input Impedance

• 100% of the Parts are Dynamically Tested

• Short Circuit Ruggedness > 6 m s @ 25 ^° C

• Copacked with Soft, Fast Recovery Extremefast Diode

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device Benefits

• Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications

• Rugged Transient Reliability

• Outstanding Parallel Operation Performance with Balance Current Sharing

• ^{Low EMI}

Applications

• Traction Inverter for HEV/EV

• Auxiliary DC/AC Converter

• Motor Drives

• Other Power−train Applications Requiring High Power Switch

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See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION MARKING DIAGRAM

TO−247−3LD CASE 340CU G C E

$Y&Z&3&K FGY120T 65SPD

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

FGY120T65SPD= Specific Device Code C

E

G

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ABSOLUTE MAXIMUM RATINGS

Symbol Description Ratings Units

V

Collector to Emitter Voltage 650 V

VG

Gate to Emitter Voltage ± 20 V

Transient Gate to Emitter Voltage ±30 V

I

Collector Current (Note 1) @ T

= 25°C 240 A

Collector Current @ T

= 100 ° C 220 A

I

Nominal Current 120 A

I

Pulsed Collector Current 378 A

I

Diode Forward Current (Note 1) @ T

= 25°C 240 A

Diode Forward Current @ T

= 100 ° C 188 A

P

Maximum Power Dissipation @ T

= 25°C 882 W

Maximum Power Dissipation @ T

= 100°C 441 W

SCWT Short Circuit Withstand Time @ T

= 25°C 6 ms

dV/dt Voltage Transient Ruggedness (Note 2) 10 V/ns

T

Operating Junction Temperature −55 to +175 ° C

T

Storage Temperature Range −55 to +175 °C

T

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 s 300 °C 1. Limited by bondwire

2. V

= 400 V, V

= 15 V, I

= 378 A, Inductive Load

THERMAL CHARACTERISTICS

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction to Case − 0.17 °C/W

R

(Diode) Thermal Resistance, Junction to Case − 0.32 °C/W

R

Thermal Resistance, Junction to Ambient − 40 °C/W

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Pacing Type Qty per Tube

FGY120T65SPD FGY120T65SPD−F085 TP−247 Tube 30ea

ELECTRICAL CHARACTERISTICS OF THE IGBT T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

OFF CHARACTERISTICS

BV

Collector to Emitter Breakdown Voltage V

= 0 V, I

= 1 mA 650 − − V DBV

DT

Temperature Coefficient of Breakdown

Voltage V

= 0 V, I

= 1 mA − 0.6 − V/°C

I

Collector Cut−Off Current V

= V

, V

= 0 V − − 40 μA

I

G−E Leakage Current V

= V

, V

= 0 V − − ± 250 nA

ON CHARACTERISTICS

V

G−E Threshold Voltage I

= 120 mA, V

= V

4.2 5.4 6.2 V

V

Collector to Emitter Saturation Voltage I

= 120 A

V

= 15 V − 1.5 1.85 V I

= 120 A

V

= 15 V, T

= 175°C − 1.8 − V DYNAMIC CHARACTERISTICS

C

Input Capacitance V

= 30 V

V

= 0 V,

f = 1 MHz − 6810 − pF

C

Output Capacitance − 440 − pF

C

Reverse Transfer Capacitance − 50 − pF

R

Internal Gate Resistance f = 1 MHz − 3 − W

SWITCHING CHARACTERISTICS

T

Turn−On Delay Time V

= 400 V, I

= 120 A, R

= 5 W, V

= 15 V,

Inductive Load, T

= 25°C

− 53 − ns

T

Rise Time − 134 − ns

T

Turn−Off Delay Time − 102 − ns

T

Fall Time − 115 − ns

E

Turn−On Switching Loss − 6.8 − mJ

E

Turn−Off Switching Loss − 3.5 − mJ

E

Total Switching Loss − 10.3 − mJ

T

Turn−On Delay Time V

= 400 V, I

= 120 A, R

= 5 W, V

= 15 V,

Inductive Load, T

= 175°C

− 50 − ns

T

Rise Time − 133 − ns

T

Turn−Off Delay Time − 109 − ns

T

Fall Time − 138 − ns

E

Turn−On Switching Loss − 9.8 − mJ

E

Turn−Off Switching Loss − 4.0 − mJ

E

Total Switching Loss − 13.8 − mJ

Q

Total Gate Charge V

= 400 V, I

= 120 A, V

= 15 V − 162 243 nC

Q

Gate to Emitter Charge − 49 − nC

Q

Gate to Collector Charge − 47 − nC

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ELECTRICAL CHARACTERISTICS OF THE DIODE T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

V

Diode Forward Voltage I

= 120 A T

= 25 ° C − 1.3 1.6 V

T

= 175°C − 1.2 −

E

Reverse Recovery Energy V

= 400V, I

= 120 A,

dI

/dt = 1000 A/μs T

= 25°C − 450 − μJ

T

= 175°C − 3000 −

T

Diode Reverse Recovery Time T

= 25°C − 123 − ns

T

= 175°C − 240 −

Q

Diode Reverse Recovery Charge T

= 25°C − 2.8 − μC

T

= 175°C − 12.2 −

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage

Characteristics Figure 4. Transfer Characteristics

Figure 5. Saturation Voltage vs. Case

Temperature at Variant Current Level Figure 6. Saturation Voltage vs. V

0 2 4 6 8

0 60 120 180 240 300 360

20V TC = 25^oC

15V 12V10V V_GE = 8V

C o lle ct or C u rre nt , I

[A]

Collector−Emitter Voltage, V

[V] 0 0 2 4 6 8

60 120 180 240 300 360

20V TC = 175^oC

12V15V VGE = 8V10V

C o lle ct or C u rre nt , I

[A]

Collector−Emitter Voltage, V

[V]

0 1 2 3 4 5

0 60 120 180 240 300 360

Common Emitter VGE = 15V T_C = 25^oC T_C = 175^oC

C olle ct or C urre nt , I

[A]

Collector−Emitter Voltage, V

[V]

0 3 6 9 12

0 40 80 120 160

Common Emitter V_CE = 20V TC = 25^oC TC = 175^oC

C o lle ct or C u rre nt , I

[A]

Gate−Emitter Voltage,V

[V]

25 50 75 100 125 150 175

1.0 1.5 2.0 2.5 3.0

IC = 240A

I_C = 60A IC = 120A Common Emitter

V_GE = 15V

Col lector

Emitter Voltage, V

[V]

Collector−EmitterCase Temperature, T

[

C]

6 8 10 12 14

0 2 4 6 8 10

I_C = 240A IC = 120A

I_C = 60A

Common Emitter T_C = −40^oC

Col lector

Emitter Voltage

V

[V]

Gate−Emitter Voltage, V

[V]

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 7. Saturation Voltage vs. V

Figure 8. Saturation Voltage vs. V

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA Characteristics

6 8 10 12 14

0 2 4 6 8 10

IC = 120A

IC = 240A

I_C = 60A

Common Emitter T_C = 25^oC

Col lector

Emitter Voltage

V

[V]

Gate−Emitter Voltage, V

[V]

6 8 10 12 14

0 2 4 6 8 10

IC = 240A I_C = 120A

I_C = 60A

Common Emitter TC = 175^oC

Col lector

Emitter Voltage

V

[V]

Gate−Emitter Voltage, V

[V]

0.1 1 10

10 100 1000 10000

Common Emitter VGE = 0V, f = 1MHz T_C = 25^oC

Cres Coes Cies

Capacitance [pF]

Collector−Emitter Voltage, V

[V]

30 0 0 50 100 150 200

3 6 9 12 15

VCC = 390V V_CC = 325V Common Emitter

TC = 25^oC

VCC = 260V

Gate

Emitter Voltage, V

[V]

Gate Charge, Q

[nC]

1 10 100 1000

0.01 0.1 1 10 100 1000

10 ms DC Single Nonrepetetitive

Pulse TC = 25^oC Curves must be derated linearly with increase in temperature

10ms 100ms

C o lle ct or C u rre nt , I

[A]

Collector−Emitter Voltage, V

[V]

1

10

100 1000

1 10 100 1000

C olle ct or C urre nt , I

[A]

Collector−Emitter Voltage, V

[V]

1 ms

Safe Operating Area VGE = 15V, T <= 175C ^oC

10

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 13. Turn−on Characteristics vs. Gate

Resistance Figure 14. Turn−off Characteristics vs. Gate Resistance

Figure 15. Turn−on Characteristics

vs. Collector Current Figure 16. Turn−off Characteristics vs. Collector Current

Figure 17. Switching Loss vs Gate Resistance Figure 18. Switching Loss vs Collector Current

0 10 20 30 40 50

10 100

Common Emitter VCC = 400V, VGE = 15V I_C = 120A

T_C = 25^oC TC = 175^oC t_d(on)

t_r

Switching Time [ns]

Gate Resistance, R

[

] 200

0 10 20 30 40 50

10 100 1000

Common Emitter V_CC = 400V, V_GE = 15V IC = 120A

TC = 25^oC TC = 175^oC

td(off)

tf

Switching Time [ns]

Gate Resistance, R

[

]

0 40 80 120 160 200

1 10 100 1000

Common Emitter VGE = 15V, RG = 5W T_C = 25^oC T_C = 175^oC

tr

td(on)

Switching Time [ns]

Collector Current, I

[A]

0 40 80 120 160 200

10 100 1000

Common Emitter VGE = 15V, RG = 5W T_C = 25^oC T_C = 175^oC

t_d(off) t_f

Switching Time [ns]

Collector Current, I

[A]

0 20 40 60 80 100 120

0.1 1 10 100

Common Emitter V_GE = 15V, R_G = 5W TC = 25^oC

T_C = 175^oC E_on

E_off

Swi tchi ng Loss [mJ]

Collector Current, I

[A]

0 10 20 30 40 50

1 10

Common Emitter VCC = 400V, VGE = 15V I_C = 120A

T_C = 25^oC T_C = 175^oC E_on

E_off

Switching Loss [mJ]

Gate Resistance, R

[

]

50

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 19. Forward Characteristics Figure 20. Reverse Current

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

Figure 23. Collector to Emitter Breakdown Voltage vs. Junction Temperature

0.0 0.5 1.0 1.5 2.0 2.5

0.1 1 10 100

T_C = 125^oC TC = 25^oC

360

TC = 175^oC

Forward Voltage, V

[V]

Forward Current, I

[A]

200 400 600

0.01 0.1 1 10 100 1000 10000

650 50

TC = 125^oC

TC = 25^oC T_C = 175^oC

Reverse Voltage, V

[V]

Reverse Current, I

[

A]

0 20 40 60 80 100 120

0 50 100 150 200 250 300

di/dt = 1000A/ms di/dt = 500A/ms

di/dt = 500A/ms

TC = 25^oC T_C = 175^oC di/dt = 1000A/ms

Reverse Recovery Ti me, t

[ns]

Forward Current, I

[A]

0 20 40 60 80 100 120

100 1000 10000 20000

di/dt = 500A/ms di/dt = 1000A/ms

di/dt = 500A/ms

TC = 25^oC T_C = 175^oC di/dt = 1000A/ms

Stored Recovery Charge, Q

[nC]

Forward Current, I

[A]

−80 −40

0 40 80 120 160 200

600 650 700 750 800

IC = 1mA

COLLECTOR TO EMITTER BRE AKDOWN V O LTAGE , BV

[V]

T

, JUNCTION TEMPERATURE (

C)

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 24. Transient Thermal Impedance of IGBT

Figure 25. Transient Thermal Impedance of Diode

TO−247−3LD CASE 340CU

ISSUE B

DATE 28 OCT 2021

XXXX = Specific Device Code A = Assembly Site Code Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

AYWWZZ XXXXXXXXX XXXXXXXXX

98AON13773G DOCUMENT NUMBER:

DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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