MOSFET – P-Channel, POWERTRENCH )
60 V
FDD5614P
General Description
This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications.
Features
• −15 A, −60 V
♦
R
DS(ON)= 100 mW at V
GS= −10 V
♦
R
DS(ON)= 130 mW at V
GS= −4.5 V
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low R
DS(ON)• High Power and Current Handling Capability
• This is a Pb−Free Device
Applications• DC/DC Converter
• Power Management
• Load Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDSS Drain−Source Voltage −60 V
VGSS Gate−Source Voltage ±20 V
ID Drain Current − Continuous (Note 3)
− Pulsed (Note 1a)
−15
−45
A
PD Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1b)
42 3.8 1.6
W
TJ, TSTG Operating and Storage Junction
Temperature Range −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DPAK3 (TO−252 3 LD) CASE 369AS
MARKING DIAGRAM
$Y&Z&3&K FDD 5614P
FDD5614P = Specific Device Code
$Y = onsemi Logo
&Z = Assembly Plant Code
&3 = 3−Digit Date Code
&K = 2−Digits Lot Run Traceability Code G
S
D P−Channel MOSFET G
D S
Device Package Shipping† ORDERING INFORMATION
FDD5614P TO−252−3
(Pb−Free) 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
RqJC Thermal Resistance, Junction to Case
(Note 1) 3.5 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1a) 40 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1b) 96 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Condition Min Typ Max Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 1) WDSS Single Pulse Drain−Source
Avalanche Energy VDD = −30 V, ID = −4.5 A − − 90 mJ
IAR Maximum Drain−Source Avalanche
Current − − −4.5 A
OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = −250 mA −60 − − V
DBVDSS DTJ
Breakdown Voltage Temperature
Coefficient ID = −250 mA, Referenced to 25°C − −49 − mV/°C
IDSS Zero Gate Voltage Drain Current VDS = −48 V, VGS = 0 V − − −1 mA
IGSSF Gate−Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA
IGSSR Gate−Body Leakage, Reverse VGS = −20 V, VDS = 0 V − − −100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate to Threshold Voltage VDS = VGS, ID = −250 mA −1 −1.6 −3 V
DVGS(th) DTJ
Gate Threshold Voltage
Temperature Coefficient ID = −250 mA, Referenced to 25°C − 4 − mV/°C
RDS(on) Static Drain−Source On−Resistance VGS= −10 V, ID = −4.5 A − 76 100 mW
VGS= −4.5 V, ID = −3.9 A − 99 130
VGS= −10 V, ID = −4.5 A, TJ = 125°C − 137 185
ID(on) On−State Drain Current VGS= −10 V, VDS = −5 V −20 − − A
gFS Forward Transconductance VDS = −5 V, ID = −3 A − 8 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = −30 V, VGS = 0 V, f = 1 MHz − 759 − pF
Coss Output Capacitance − 90 − pF
Crss Reverse Transfer Capacitance − 39 − pF
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = −30 V, ID = −1 A,
VGS = −10 V, RGEN = 6 W − 7 14 ns
tr Turn−On Rise Time − 10 20 ns
td(off) Turn−Off Delay Time − 19 34 ns
tf Turn−Off Fall Time − 12 22 ns
Qg Total Gate Charge VDS = −30 V, ID = −4.5 A,
VGS = −10 V − 15 24 nC
Qgs Gate−Source Charge − 2.5 − nC
Qgd Gate−Drain Charge − 3.0 − nC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Symbol Parameter Condition Min Typ Max Unit
DRAIN−SOURCE AVELANCHE RATINGS IS Maximum Continuous Drain–Source
Diode Forward Current − − −3.2 A
VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = −3.2 A (Note 2) − −0.8 −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design.
a) RqJA = 40°C/W when mounted on a
1 in2 pad of 2 oz copper. b) RqJA = 96°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
3. Maximum current is calculated as: PD RDS(ON)
Ǹ
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10 V. Package current limitation is 21 A.
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0 3 6 9 12 15
0 1 2 3 4 5
VGS = −10 V
−6 V
−4.5 V
−4.0 V
−3.5 V
−3.0 V
−2.5 V
−VDS, DRAIN−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics ID, DRAIN CURRENT (A)
0.8 1 1.2 1.4 1.6 1.8
0 2 4 6 8 10
VGS = −3.5 V
−4.0 V
−4.5 V
−5.0 V
−6.0 V
−10 V
−ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE
Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
−50 −25 0 25 50 75 100 125 150 175 ID = −4.5 A
VGS = −10 V
TJ, JUNCTION TEMPERATURE (°C) RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE
0 0.1 0.2 0.3 0.4
2 4 6 8 10
ID = −2.3 A
TA = 25°C TA = 125°C
−VGS, GATE TO SOURCE VOLTAGE (V) RDS(ON), ON−RESISTANCE (W)
0 3 6 9 12 15
Figure 3. On−Resistance Variation
with Temperature Figure 4. On−Resistance Variation
with Gate−to−Source Voltage
1 2 3 4 5
TA = −55°C VDS = −5 V
25°C 125°C
−VGS, GATE TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 5. Transfer Characteristics
0.001 0.01 0.1 1 10 100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS = 0 V
TA = 125°C 25°C
−55°C
−VSD, BODY DIODE FORWARD VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A)
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
TYPICAL CHARACTERISTICS
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics VGS, GATE−SOURCE VOLTAGE (V)
0 10 20 30 50 60
−VDS DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Figure 8. Capacitance Characteristics
t1, TIME (s)
P(pk), PEAK TRANSIENT POWER (W)
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
r(t),NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
Figure 11. Transient Thermal Response Curve 0
2 4 6 8 10
0 4 8 12 16
ID = −4.5 A
−30 V
−20 V VDS = −40 V
0 200 400 600 800
1000 f = 1 MHz
VGS = 0 V CISS
COSS CRSS
40
0.01 0.1 1 10 100
0.1 1 10 100
−VDS DRAIN−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
VGS = −10 V SINGLE PULSE RqJA = 96°C/W TA = 25°C RDS(ON) LIMIT
100 ms
100 ms 10 ms
1 ms
1 s 10 s DC
0 10 20 30 40
SINGLE PULSE RqJA = 96°C/W TA = 25°C
0.001 0.01 0.1 1
P(pk)
0.1 1 10 100 1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
D = 0.5 0.2 0.1 0.05 0.020.01
SINGLE PULSE
RqJA(t) = r(t) +RqJA RqJA = 96°C/W
TJ − TA = P * RqJA(t) DUTY CYCLE, D = t1/t2
t1, TIME (s)
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
t1 t2
TYPICAL CHARACTERISTICS
(continued)DPAK3 (TO−252 3 LD) CASE 369AS
ISSUE A
DATE 28 SEP 2022
XXXX = Specific Device Code A = Assembly Location Y = Year
WW = Work Week ZZ = Assembly Lot Code
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.
GENERIC MARKING DIAGRAM*
XXXXXX XXXXXX AYWWZZ
98AON13810G DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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