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BAS16DXV6 Dual Switching Diode

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Dual Switching Diode

Features

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS (T

A

= 25 ° C)

Rating Symbol Max Unit

Continuous Reverse Voltage V

R

100 V

Recurrent Peak Forward Current I

F

200 mA

Peak Forward Surge Current Pulse Width = 10 m s

I

FM(surge)

500 mA

THERMAL CHARACTERISTICS Characteristic

(One Junction Heated) Symbol Max Unit Total Device Dissipation (Note 1)

T

A

= 25 ° C Derate above 25 ° C

P

D

357 2.9

mW mW/ ° C Thermal Resistance,

Junction-to-Ambient (Note 1)

R

qJA

350 ° C/W

Characteristic

(Both Junctions Heated) Symbol Max Unit Total Device Dissipation (Note 1)

T

A

= 25 ° C Derate above 25 ° C

P

D

500 4.0

mW mW/ ° C Thermal Resistance,

Junction-to-Ambient (Note 1)

R

qJA

250 ° C/W

Junction and Storage Temperature T

J

, T

stg

− 55 to +150 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. FR−4 @ Minimum Pad

www.onsemi.com

6 1

SOT−563 CASE 463A

PLASTIC

123 65 4

A6 = Specific Device Code M = Date Code

G = Pb−Free Package

(Note: Microdot may be in either location) MARKING DIAGRAM

A6 M G G

Device Package Shipping

ORDERING INFORMATION

BAS16DXV6T1G SOT−563 (Pb−Free)

4000 / Tape &

Reel 3

4

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

SBAS16DXV6T1G SOT−563 (Pb−Free)

4000 / Tape &

Reel

(2)

BAS16DXV6

www.onsemi.com 2

ELECTRICAL CHARACTERISTICS (T

A

= 25 ° C unless otherwise noted)

Characteristic Symbol Min Max Unit

Forward Voltage (I

F

= 1.0 mA) (I

F

= 10 mA) (I

F

= 50 mA) (I

F

= 150 mA)

V

F

715 855 1000 1250

mV

Reverse Current (V

R

= 100 V)

(V

R

= 75 V, T

J

= 150 ° C) (V

R

= 25 V, T

J

= 150 ° C)

I

R

1.0 50 30

m A

Capacitance

(V

R

= 0, f = 1.0 MHz)

C

D

− 2.0 pF

Reverse Recovery Time

(I

F

= I

R

= 10 mA, R

L

= 50 W ) (Figure 1)

t

rr

− 6.0 ns

Stored Charge

(I

F

= 10 mA to V

R

= 6.0 V, R

L

= 500 W ) (Figure 2)

QS − 45 PC

Forward Recovery Voltage (I

F

= 10 mA, t

r

= 20 ns) (Figure 3)

V

FR

− 1.75 V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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Figure 1. Reverse Recovery Time Equivalent Test Circuit

Figure 2. Stored Charge Equivalent Test Circuit V

F

1 ns MAX

90%

10%

t

100 ns

t

if

t

rr

I

rr

500 W DUT

50 W DUTY CYCLE = 2%

V

f

90%

10%

20 ns MAX

t

400 ns

V

C

V

CM

t VCM + Qa

C

500 W DUT BAW62

D1 243 pF 100 K W

DUTY CYCLE = 2%

V

120 ns

90%

V

V

fr

1 K W 450 W

50 W DUT

OSCILLOSCOPE R . 10 MW C 3 7 pF

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BAS16DXV6

www.onsemi.com 4

TYPICAL CHARACTERISTICS

100

0.2 0.4

V

F

, FORWARD VOLTAGE (VOLTS)

0.6 0.8 1.0 1.2

10

1.0

0.1

T

A

= 85 ° C

10

0

V

R

, REVERSE VOLTAGE (VOLTS) 1.0

0.1

0.01

0.001

10 20 30 40 50

0.68

0

V

R

, REVERSE VOLTAGE (VOLTS) 0.64

0.60

0.56

0.52

C D , DIODE CAP ACIT ANCE (pF)

2 4 6 8

I F , FOR W ARD CURRENT (mA)

Figure 4. Forward Voltage Figure 5. Leakage Current

Figure 6. Capacitance T

A

= -40 ° C

T

A

= 25 ° C

T

A

= 150 ° C T

A

= 125 ° C

T

A

= 85 ° C

T

A

= 55 ° C

T

A

= 25 ° C I R

, REVERSE CURRENT ( μ A)

Figure 7. Normalized Thermal Response

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

0.001 0.01 0.1 1.0

r(t), NORMALIZED TRANSIENT THERMAL RESIST ANCE

t, TIME (s) SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

(5)

SOT−563, 6 LEAD CASE 463A

ISSUE H

DATE 26 JAN 2021 SCALE 4:1

1 6

PACKAGE DIMENSIONS

(6)

SOT−563, 6 LEAD CASE 463A

ISSUE H

DATE 26 JAN 2021

XX = Specific Device Code M = Month Code G = Pb−Free Package

XX M G GENERIC MARKING DIAGRAM*

1

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON11126D DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 2 OF 2 SOT−563, 6 LEAD

© Semiconductor Components Industries, LLC, 2019

www.onsemi.com

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products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

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