[PDF] Top 20 McGann社の買収完了に関するお知らせ 2007年 | IRニュース | 株主・投資家の皆様へ | アマノ株式会社
Has 10000 "McGann社の買収完了に関するお知らせ 2007年 | IRニュース | 株主・投資家の皆様へ | アマノ株式会社" found on our website. Below are the top 20 most common "McGann社の買収完了に関するお知らせ 2007年 | IRニュース | 株主・投資家の皆様へ | アマノ株式会社".
Application of Aluminum Nitride Thin Film on Biosensing of Cell Differentation
... The film properties and capacitor capability of Al-N films with and without cell culture were determined using glancing incident X-ray diffraction, leakage current density, cross-secti[r] ... 完全なドキュメントを参照
1
Application of Aluminum Nitride Thin Film on Biosensing of Cell Differentiation
... The film properties and capacitor capability of Al-N films with and without cell culture were determined using glancing incident X-ray diffraction, leakage current density, cross-secti[r] ... 完全なドキュメントを参照
2
Biosensing of biophysical characterization by metal-aluminum nitride-metal capacit
... Abstract Aluminum nitride thin films were fabricated as stress biosensors for biosensing cell ...capacitance of AlN films following cell culture were detected via leakage ... 完全なドキュメントを参照
2
Biosensing of biophysical characterization by metal-aluminum nitride-metal capacitor
... stress of each layer of the specimens was determined by considering only the two adjacent layers as a thin film and a substrate, ...results of the calculation established that the ... 完全なドキュメントを参照
1
Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors
... Current density versus anodization time at 100 V anodization voltage showing the current density decreases as the anodization time increases at various pH values.. applie[r] ... 完全なドキュメントを参照
1
Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator
... Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 300, Taiwan, ROC b Department of Photonics and Display Institute, ... 完全なドキュメントを参照
4
Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistors
... A. Film deposition and device fabrication procedures Heavily doped n-type silicon 共100兲 wafers with a doping concentration of 5 ⫻10 15 cm −3 were used as ...AlN film was deposited on these ... 完全なドキュメントを参照
1
Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection
... properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral micro- ...compositions of a-SiCN thin films deposited ... 完全なドキュメントを参照
15
Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate
... spectra of both samples are plotted in Fig. 3 together with that of the reference sample, ...range of 200–1000 nm except for the absorption dip at approximately 820 nm, which comes from the interband ... 完全なドキュメントを参照
1
Vertical Alignment of Liquid Crystal on ITO Glass with Anodic Aluminum Oxide Thin Film
... method of the porous AAO thin film on ITO electrode had been demonstrated in this ...transmittance of the AAO-ITO substrate is around ...vertically on the AAO thin ... 完全なドキュメントを参照
1
Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors
... dependent on the variation in channel ...function of width. Threshold voltage V th that not only increased passivation of the deep state but also increased passivation of preexisting defects ... 完全なドキュメントを参照
2
The Characterization of Aluminum Nitride Thin Films Prepared by Dual Ion Beam Sputtering
... Aluminum nitride (AlN) films were prepared between 800 and 1200 V at 450 -C and room ...AlN film deposited at 450 -C was thinner than that at room temperature at a given voltage, which might account ... 完全なドキュメントを参照
1
CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES
... In contrast to conventional TFTs with pure thermal oxides as gates, TFTs with 0/N gate structures can attain a higher ON/OFF current ratio and carrier mobility by reducing the equivalent[r] ... 完全なドキュメントを参照
1
Numerical calculation of the reflectance of sub-wavelength structures on silicon nitride for solar cell application
... results of de- signed silicon nitride sub-wavelength ...results of rigorous coupled wave analysis simulation for the pyramidal- shaped silicon nitride sub-wavelength structures, the ratio ... 完全なドキュメントを参照
33
Direct patterning of silicon nitride thin film by projection photoablation for fabricating thin-film-transistor liquid crystal displays
... The direct laser patterning process offers a cost-effective alternative to wet- and dry-etch lithographies for the fabrication of thin-film transistor liquid crystal displays (TFT-LCDs[r] ... 完全なドキュメントを参照
Photosensor application of amorphous InZnO-based thin film transistor
... based on the inverted coplanar structure TFT device fabricated on a glass ...layer of 300-nm-thick silicon nitride (SiN x ) was subsequently deposited on the patterned MoW layer by ... 完全なドキュメントを参照
8
Effect of Lateral Body Terminal on Silicon-Oxide-Nitride-Oxide-Silicon Thin-Film Transistors
... effect of LBT SONOS TFTs under erasing operation was ...characteristics of LBT SONOS TFTs with width = 30 μm are shown in ...part of the transfer characteristic which does not shift under erasing ... 完全なドキュメントを参照
2
Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application
... silicon nitride SWS are shown in Fig. 4. It is clear that J SC , V OC of silicon nitride SWS are higher than silicon nitride SLAR structure as seen from ...efficiency of 0.8% can be ... 完全なドキュメントを参照
1
Combustion synthesis of aluminum nitride powder using additives
... history of a reactant compact without any additives for purpose of ...ignition of the combustion reaction. The temperature at the point of the abrupt increase was thus defined as the ignition ... 完全なドキュメントを参照
Alignment Properties of Liquid Crystal on Etched Anodic Aluminum Oxide Film
... accuracy of all the information (the “Content”) contained in the publications on our ...purpose of the ...views of the authors, and are not the views of or endorsed by Taylor & ... 完全なドキュメントを参照
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