1
... 1
1.1
... 1
1.1.1
... 1
1.1.2 AC4CH
... 3
1.1.3 AC4CH
... 7
1.1.4
... 11
1.1.4.1
... 11
1.1.4.2
... 13
1.2
... 15
... 19
2
... 23
2.1
... 23
2.1.1
... 23
2.1.2
... 24
2.2
... 25
2.3
... 36
2.4
... 41
2.4.1
... 41
2.4.2
... 47
2.4.3
... 50
2.5
... 53
2.5.1
... 53
2.5.1.1
... 53
2.5.1.2
-Al
Mg
Si
... 58
2.5.1.3
... 61
2.5.1.4
Si
... 65
2.5.2
... 66
2.5.2.1
... 66
2.5.2.2 Mg
Si
... 68
2.5.2.3
Si
... 71
2.6
Si
... 74
2.6.1
Si
... 74
2.6.2
... 88
2.7
... 95
2.8
... 98
1
... 98
... 99
3
Si
... 102
3.1
... 102
3.1.1
... 102
3.2
... 102
3.3
... 107
3.3.1 ECAP
... 107
3.3.2
Si
... 111
3.3.3
Si
... 121
3.4
... 135
3.5
... 136
1 ECAP
Si
... 136
... 143
4
.. 144
4.1
... 144
4.1.1
... 144
4.2 FSP
... 144
4.2.1 FSP
... 145
4.2.2 FSP
... 146
4.2.3
... 150
4.2.3.1
... 150
4.2.3.2
... 153
4.2.4
... 169
4.2.4.1
... 169
4.2.4.2
... 171
4.2.5
... 177
4.3 FSP
... 178
4.3.1
... 178
4.3.2
... 179
4.3.2.1
... 179
4.3.2.2
... 182
4.3.3
... 190
4.4
... 191
4.5
... 192
... 194
5
... 195
... 202
... 203
1
1 . 1
1 . 1 . 1
100 1)2) ! 1/3 ! (Al-Zn-Mg-Cu ) ! ! ! 60% 2 ! 3 !! ! 3% CO2 2 (2011 )3) 9 (2011 )4) 5) 8 6) ① ② ③ ④ 6) 8) 9) 11)
1 . 1 . 2
A C 4 C H
AC4CH ( AC4CH ) Al-Si Mg Fe 1 . 1 JIS AC4CH Mg Mg2Si Fe Fe AC4CH 9),12) 1 . 1 AC4CH (JIS ) AC4CHα-Al (Al) α-Al
(Al) Si Fe Mg2Si AC4CH ( µm µm ) ① ② ③ 13) 22) Si ( µm µm )
Al-Si2 557 12.6(mass% mass%
) Si 1.65% (577 )
23) Si Si Si (
) 24) 29)
30) Si Si 31) Na Sr Sb 32)33) Si Si ( µm ) AC4CH -Al
2 (Dendrite Arm Spacing DASⅡ ) -1/3
12) DASⅡ 12),31) Fe ( µm µm ) Fe 0.03 0.05%(655 ) 34) Fe 35) Fe Si 36) ( nm nm ) AC4CH ( -Al ) Mg2Si (β”) AC4CH 1 . 2 Si Fe
1 . 1 A C 4 C H ( m a s s % ) Si Fe Cu Mn Mg Zn Ni Ti Pb Sn Cr Al JIS 6.5- -0.2 -0.1 -0.1 0.25- -0.1 -0.05 -0.2 -0.05 -0.05 -0.05 bal. AC4CH 7.5 0.45 1 . 1 A C 4 C H
10µm
50µm
α-Al
Si
100µm
α-Al
10µm
Fe
1 . 2 A C 4 C H
α-Al
Si
Fe
!
(
)
!
Si
Fe
!
Si
Fe
!
Si
Fe
1 . 1 . 3 A C 4 C H
( ) ( ) 37),38) 39) 44) ! AC4CH AC4CH Mg Si Al-Mg2Si 2 1 . 3 Al-Mg2Si 2 -Al Mg2Si 595 1.85% Mg2Si AC4CH 1 . 4 (T6) (Mg Si) (Al) Si ( ) Mg Si Mg2Si ( ”) AC4CH 535 12) Si Si 45) 50) SiZhang 47) A356 (JIS:AC4CH ) 505 30s 550 30min 6h 95% 49) AC4CH Al-Si-Mg 560 30min 540 300min 16% 1 . 3 A l - M g2S i 2
Al
Mg
2Si (mass%)
Tem
per
at
u
re
, T
/
0
100
200
300
400
500
600
700
L
L+(Al)
(Al)
1.85%
595
13%
(Al)+Mg
2Si
2
4
6
8
10 12 14
1 . 4 A C 4 C H
!
ECAP(Equal-Channel Angular Pressing ECAP )51) ARB(Accumulative
Roll-Bonding ARB ) 52) (Friction Stir Processing FSP
)53)
ECAP(Equal-Channel Angular Pressing)
ECAP 1 . 5 54),55) ECAP ECAP -Al Si 56),57) AC4CH ECAP Si 58)
1 . 5 E C A P
ARB(Accumulative Roll-Bonding) ARB 1 . 6
52) Jamaati 59) A356 ARB ARB
ARB Si 1 . 6 A R B
Φ
Channel
ECAP die
ψ
Specimen
Cutting Stacking Roll bondingSpecimen
FSP(Friction Stir Processing) FSP
15 25
47)
ECAP ARB FSP AC4CH
-Al Si Si 17) 28) 31) Si Si Si
1 . 1 . 4
1 . 1 . 4 . 1(Friction Stir Processing FSP )53) 1991 TWI(The
Welding Institute of the United Kingdom) (Friction Stir Welding
FSW )60) 1 . 7 FSP(
FSW) FSP
FSP ( )
( 1 . 7 - 1 ) ( 1 . 7 - 2 )
( 1 . 7 - 4 ) 1 . 8 FSP( FSW)
(Stir Zone) µm
(Thermo Mechanically Affected Zone TMAZ)
(Heat Affected Zone HAZ) 61) FSP
1 . 7 F S P
1 . 8 F S P ( o r F S W )
1 . 1 . 4 . 2 FSP
62)
FSP 1 . 9
Al-Cu-Si AC2B Al-Si-Mg AC4C Al-Si-Cu
ADC12 63) 68)
AC4CH (A356 ) AC4CH
(A356 ) Sharma 69) FSP FSP Si 80% Ma 70) FSP α-Al 3µm Santella 71) FSP FSP Ma 72) 73) FSP (T6 ) Si Al Si FSP FSP FSP FSP 74) 74) FSP FSP 75) FSP Si 2 -Al FSP FSW
76) 84) Y.S.Sato77) A6063 (Al-Mg-Si ) T5
FSW ( )
FSP(FSW) 85) FSP 86) FSP(FSW) FSP FSP ( ) FSP ( ) Al FSP 1 . 9 F S P
AC2B
Alloy
Year
2000
2005
63)FSP
2010
AC4C
AC4CH
(A356)
A319
ADC12
64)FSP
) 73) 68)Santella
)Sharma
69)Ma
70) 66)FSP
Nakata
67)FSP
Ma
)Ma
)FSP
Ma
)FSP
Santella
)1 . 2
AC4CH FSP 1 . 1 0 FSP ( ) Si FSP FSP FSP FSP FSP 2 FSP FSP 2 FSP AC4CH FSP ( /s) 87) FSP FSP ( /s) FSP FSP FSP 2 3 AC4CH2 4 2 5 Mg Si Si 2 6 Si Si 3 FSP Si AC4CH AC4CH -Al Si Si Si Si Si FSP Si ECAP Si Si Si 4 FSP FSP FSP FSP FSP
FSP FSP FSP FSP (4.2 ) FSP Mg Si FSP (4.3 ) (4.4 ) FSP
2 2.3 2.4 2.5 2.6 Si 3 Si ! Si ! Si
AC4CH
! ! ( ) ! Si Fe ! Si Fe Si ECAP ARB FSP 4 4.3 FSP 4.4 4.2 FSP1.10
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87)
2
2.1
FSP FSP FSP2.1.1
1 (535 ) 15 25 1) 4) NaOH 2.1.1 FSP 5) FSPIH 6) 8) 9) 40 400kHz 2000kHz FSP 2.1.1
2.1.2
FSP FSP ( )Target holding temp.
Tem
p.
time
Electrical furnace
Salt-bath
&
Fluid bed
Induction
heating
Overheat
2.3 2.4 2.5 Mg Si Si 2.6 Si Chaudhury 10) AC4CH Mg D357 Si Al Si Si Si Si
2.2
! AC4CH (JIS ) Ar Sr Si 700 150 ( ) 2.2.1 2.3 2.4 2.5 2.2.1 10mm 10mm 50mm 2.3 2.4 2.5( c,d ) ( a,b ) 2.5 (2.5.1.1) 2.6 2.2.2 10mm 5mm 2.2.1 AC4CH (mass%) Si Fe Cu Mn Mg Zn Ni Ti Pb Sn Cr Sr(ppm) Al Sample 6.9 0.12 <0.01 <0.01 0.37 0.01 <0.01 0.13 <0.01 <0.01 <0.01 48 bal. 2.2.1 2.2.2
a
b
c
d
3mm
20mm
Ingot
190mm
22mm
50mm
10mm
10mm
20mm
Ingot
190mm
22mm
5mm
Φ
10mm
! 2.2.3 2.2.2 2.2.3 2MHz 2.2.4 ( ) 2.2.5 2 ( ) ( ) 2.3 2.4 2.5 2.6 2.2.4 20 ( 2.2.4 ) 2.2.3
A
B
H
C
D
E
F
G
2.2.2 2.2.3 2.2.4 ( )
A
ORION
(RKE1500A-V)
B
C
(IGA C-E1)
D
E
(SH-7A-64)
F
G
H UNIT COOLER
ORION
(RKS750S)
(Hz)
2M
(W)
10k
Heating coil
Specimen
Radiation thermometer
Water bath
(20 )
2.2.5 ( ) 2.2.4 Heating coil Specimen (10mm×10mm×50mm) Heating coil Specimen (Φ10mm×5mm)
IGA C-E1
( )
250 2000
(µm)
1.6
InGaAs
! 2.4 2.2.6 2.4.1 ( 40.0 /s) 450 570 0min 20 48 T4 AC4CH (T6 ) T4 2.4.2 2.4.3 2.5 2.6 T4 2.4.2 40.0 /s 560 0 3 10 30min 4 2.4.2 560 30min 0min 30min 2.4.3 560 3min 40.0 4.0 0.4 /s 3 2.5 2.2.7 ( 2.2.1 c,d ) 40.0 /s 560 0min 30min 20 2.5.1.1 Mg ( 2.2.1 a,b ) 40.0
/s 560 0min 7min 1min 20
(
535 8h)
Si 2.6 2.2.8 90.0 /s
0.9 /s 2 560 0,3,10 30min 4
2.2.6 2.4
2.2.7 2.5
2.4.1 Study on solution temp. 2.4.2 Study on solution time
2.4.3 Study on heating rate
Tem p. Time 48h at R.T. Temp. : 560 W.Q. at 20 Holding time : 0,3,10 and 30min Heating rate : 40.0 /s Holding time : 0min
Tem p. Time 48h at R.T. W.Q. at 20 Temp. : 450 570 Heating rate : 40.0 /s Tem p. Time 48h at R.T. W.Q. at 20 Heating rate : 40.0 4.0 0.4 /s Holding time : 3min
Temp. : 560
a
b
Tem
p.
Time
48h at
R.T.
Temp. : 560
W.Q. at 20
Holding time :
0,3,10 and 30min
Heating rate : 40.0
/s
Heating rate : 40.0 /s
W.Q. at 20
48h at
R.T.
Holding time :
0 to 7min
c
d
Ingot
2.2.8 2.6 ! Si 2 (Optical Microscope OM ) USB (L-830) ( 25mm 25mm ) 2.2.5 2.2.5
Tem
p.
Time
48h at
R.T.
Temp.:
560
W.Q. at 20 W.Q. at 2048h at
R.T.
Heating rate : 90.0 /s
Holding time : 0,3,10 and 30min
Heating rate : 0.9 /s
1 #120 2 #800 3 #1200 4 #2400 5 MD-Dur DP-DP-Spray (3µm) 6 MD-Chem OP-U2 -Al Mg Si (Electron Probe Micro Analyzer EPMA )
JXA-8200M EPMA 2 -Al
Mg Si 2 2 Mg Si 2.2.6 2.2.7 Al Si Mg Fe 4 EPMA EPMA 2.2.6 2.2.7
Al
Si
Mg
Fe
Al
Si
Mg
Fe
CH-1:TAP CH-4:PETJ CH-2:TAP CH-5:LIFH
(kV)
20
(A)
3.0×10
-8(µm)
0 or 2
Al
Si
Mg
Fe
Al
Si
Mg
Fe
CH-1:TAP CH-4:PETJ CH-2:TAP CH-5:LIFH
(kV)
20
(A)
2.5×10
-7(µm)
1
0
(µm)
256×256
60×60
Si (Scanning
Electron Microscope SEM ) S-4500
2.2.8 SEM 2.2.8 SEM ! Si Scion Image Si 0.0443µm2(4 pixel) ( / ) Si ! AutoSigma2000 ! 136 1.96N (200gf) 15s 2 [kg/mm2]
HV =
2P sin68
d
2× 1000
= 1.8544 ×
P
d
2(kV)
15
Working Distance (mm)
15
(µA)
8 10
P [kg] d [mm] 2.5 (FUTURE-TECH FM-ARS 900) 0.049N(5gf) 15s -Al ! 2.4 AG50kNG 2.2.9 JIS ( 5mm 6mm ) 48 h 2 1.4 10-3s-1 30 0.2% MoS2 2.2.9 ! 2.5 2.6 (0.2% ) AG50kNG 2.2.10 2.2.11 2.5 JIS7 ( 2mm 3mm 9.8mm) 48 h 2 8.5 10-4s-1 30 0.2% 2.6 ( 1mm 1mm 4mm) 48 h 3 2.1 10-3s-1
Microstructure observation &
Electrical conductivity &
Hardness test
Compression test
Specimen
6mm
Φ5mm
Machining
Machining
30 0.2% 2.2.10 ( ) 2.2.11 ( )
2.3
2.3.1 ( 520 ) 2.3.1(a) K-type 0.5mm ( 5mm)Microstructure observation & Electrical conductivity & Hardness test Tensile test Specimen 3mm 9.8mm 40mm 6mm t = 2mm R15mm Machining Machining 4mm 1mm t = 1mm Machining Specimen Machining
250 250 2.3.1(b) 560 2.3.2(a) 10mm 5 K-type 0.5mm L( 2.3.2(a) ) 2.3.2(b) (ch3) (Tchn-Tch3) (L=30mm ch4) L ch5 L=26mm 4 L=26mm 2.3.3 (a) 5 2mm 2.3.3(b) (ch3) (ch1 ch5) 5 ( ) 4 (L=26mm) (ch3 ) 9)
2.3.1
0
100
200
300
400
500
600
Thermocoupel
Radiation thermometer
Tem
per
at
u
re
,
T
/
Time ,
t
/ s
Stop heating
Start heating
5s
Extrapolated line
Measurable lower limit
of radiation thermometer
5mm L(a)
Specimen Top view Heating coilMeasuring point using radiation thermometer
Side view
(b)
2.3.2 ch1 ch2 ch3 ch4 ch5 5mm L
(a)
Specimen Top view Heating coilMeasuring point using radiation thermometer Side view 10mm 10mm 10mm 10mm
-8
-6
-4
-2
0
2
4
6
L=24mm
L=26mm
L=28mm
L=30mm
T
chn-T
ch3/
ch1 ch2 ch3 ch4 ch5
(b)
2.3.3 2mm ch1…. 5
(a)
Heating coil SpecimenMeasuring point using radiation thermometer 5mm Top view Side view L
-8
-6
-4
-2
0
2
4
6
No.1
No.2
No.3
No.4
No.5
T
chn-T
ch3/
ch1 ch2 ch3 ch4 ch5
(b)
2.4
40 /s (0.4 40 /s)2.4.1
2.4.1 5 10 20 30 /min 4 10mg Al-Si 570 560 565 Al-Mg2Si-Si 11) 450 570 2.4.2 250 250 2.4.2 250 X Y Y 250 560 40.0 /s 250 Y 450 560 11s 14s 560 2.4.2(b) 2.4.3 -Al Si -Al450 570 2.4.3 (h) 570 ( ) 2.4.2(b) 560 -Al Si Si 2.4.4 Si Si 2.4.4 Si 2.4.5 Si 2.4.6 0.2% 500 -Al Mg Si 570 500 500 ( ) G.P. 12) 520 Mg Si 0.2% 540 Si 570 2.4.3 (h) 570 560
2.4.1 2.4.2
540
560
580
600
620
640
Hea
t
fl
ow
,
H
Temperature , T /
10mW5 /min
20 /min
10 /min
30 /min
Ts
570 5 569 10 570 20 569 300
100
200
300
400
500
600
570 560 540 520 500 450Tem
per
at
u
re
, T
/
Time , t / s
40.0 /s Extrapolated line Measurable lower limit of radiation thermometer 5 s 400 450 500 550 600 1 s quench(b)
(a)
2.4.5 Si 2.4.6
0
0.5
1.5
2.5
450
500
550
600
M
ea
n
a
rea
,
A
/μ
m
2Solution temperature , T /
3.0
2.0
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0
M
ea
n
a
sp
ec
t
ra
ti
o
Mean area Mean aspect ratioA
s-c
as
t
32.0
34.0
36.0
38.0
40.0
42.0
E
lec
tr
ic
al
c
on
du
ct
iv
it
y
,
(I
A
C
S
%)
30
40
50
60
70
80
90
60
80
100
120
140
160
180
450
500
550
600
Solution temperature , T /
V
ic
ker
s
h
ar
dn
es
s
, HV
0.
2%
pr
oof
st
res
s
,
0.2/ M
Pa
A
s-c
as
t
Vickers hardness
0.2% proof stress
2.4.2
40.0 /s 560 2.4.7 40.0 /s 13s 560 ( 1 ) 560 4 2.4.8 Si Si Si 2.4.9 Si 3min 10min 0min 193% 264% 3min Si 3min Si Al Si Si 13) Al Si Si Si Si Si Al Si Si Si Si Al Si 2.4.9 3min 2.4.10 0.2% 3min 3min Mg Si 3min 3min 3min α-Al 2.4.9 Si Si 3min (40.0 /s) ( 1 )( 4 ) 2.4.7 2.4.8 Si
0
100
200
300
400
500
600
0
500
1000
1500
2000
Tem
per
at
u
re
,
T
/
Time , t / s
0 100 200 300 400 500 600 0 10 20 30 40 40.0℃/s Extrapolated lineMeasurable lower limit of radiation thermometer 550 555 560 565 12 14 16 18 30 min 10 min 3 min 0 min Tf (℃) To (℃) 3 1 30 min 4 0 10 min 4 1 3 min 0 0 min To : Over heat Tf : Temperature fluctuation
(b)
(b)
(a)
2.4.9 Si 2.4.10
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
M
ea
n
a
rea
,
A
/
m
2M
ea
n
a
sp
ec
t
ra
ti
o
Solution time ,
t
/ min
Mean area
Mean aspect ratio
0.5
0.5
0 0A
s-c
as
t
32.0
34.0
36.0
38.0
40.0
42.0
E
lec
tr
ic
al
c
on
du
ct
iv
it
y
,
(I
A
C
S
)
30
40
50
60
70
80
90
60
80
100
120
140
160
180
0
5
10
15
20
25
30
Solution time , t / min
V
ic
ker
s
h
ar
dn
es
s
, HV
0.
2%
pr
oof
st
res
s
,
0.2/ M
Pa
A
s-c
as
t
● Vickers hardness
○ 0.2% proof stress
2.4.3
40.0 /s 560 3min 40.0 /s 4.0 /s 0.4 /s 3 2.4.11 560 2.4.12 Si Si 4.0 /s 0.4 /s Si 2.4.13 Si 40.0 /s 2.4.9 560 3min Si Si 40.0 /s Si ( 1.5µm2) 4.0 /s 0.4 /s 2.4.14 0.2% 0.4 /s 40.0 /s 5% 3% Si 40.0 /s Si ( 1.5µm2) 4.0 /s 168% 0.4 /s 149%2.4.11 2.4.12 Si 560 25 s 5 40.0 /s 4.0 /s 0.4 /s 0 100 200 300 400 500 600 0 500 1000 1500 2000 Tem per at u re ,
T
/ Time ,t
/ s 40.0 /s Extrapolated lineMeasurable lower limit of radiation thermometer 4.0 /s
0.4 /s
(a)
2.4.13 Si 2.4.14
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
M
ea
n
a
rea
,
A
/
m
2M
ea
n
a
sp
ec
t
ra
ti
o
Heating rate ,
V
/ (
・s
-1)
0.5
0.5
0
0
A
s-c
as
t
Mean area
Mean aspect ratio
1
10
10
232.0
34.0
36.0
38.0
40.0
42.0
E
lec
tr
ic
al
c
on
du
ct
iv
it
y
,
(I
A
C
S
)
30
40
50
60
70
80
90
60
80
100
120
140
160
180
V
ic
ker
s
h
ar
dn
es
s
,
HV
0.
2%
pr
oof
st
res
s
,
0.2/ M
Pa
A
s-c
as
t
1
10
10
2Heating rate ,
V
/ (
・s
-1)
● Vickers hardness
○ 0.2% proof stress
2.5
Mg Si Si2.5.1
2.5.1.1 Mg Si EPMA Mg Si 2.5.1 2 Al Fe Mg Si 4 Al -Al -Al Si Si Si Si Mg Fe Mg Fe 2.5.2 2.5.2(a) 2 Al Fe Mg Si 4 Al-Fe-Mg-Si 2.5.2(b) 2 4 2.5.2(a) Al-Fe-Mg-Si 2.5.2(c) 2 Mg Si Mg2Si 2 Mg 2 Fe Mg2Si 3 2.5.3 (Mg Fe ) (IH:0min) Mg Fe 3min Fe Mg (EF) Mg (560 ) 25 Mg3 2.5.4 Fe Mg2Si 0min 2 Fe Mg2Si 3min Fe Fe Fe ( 2.5.3) Mg Al-Fe-Si 560 ( 30min) Fe Fe Fe EPMA Fe 30min Fe 10 2.5.1 Fe Al Mg Si Fe Fe 30min Fe Mg Al-Fe-Si Fe 14) 16) AC4CH A356 Fe 17)
α-AlFeSi(Al8Fe2Si) -AlFeSi (Al5FeSi)
Mg -AlFeMgSi (Al8FeMg3Si618),19) Al9FeMg3Si520),21) ) 22),23) 24) Fe 2.5.1 Closset 18) Gustafsson 19) (Al8FeMg3Si6) Fe Fe EPMA Fe Closset 18) Fe Mg (0.16%Fe-0.45%Mg) Mg -AlFeSi 22),23) Fe
Mg 2
Fe 3min Mg
( 2.5.3) 30min Fe
Mg ( 2.5.1) 3min -AlFeSi
2.5.2 EPMA (a) Al-Fe-Mg-Si
( ) (b) Al-Fe-Mg-Si ( )
2.5.3 EPMA
2.5.1 (mass%) 2.5.1.2 α-Al Mg Si Mg2Si Mg 3min Mg α-Al α-Al Mg EPMA Si 2.5.5 α-Al ( 20 m 30 m) 2 3 2 m α-Al Mg Si 3 α-Al 2.5.5 ( ) Mg
0min 0min 3min
3min 0.37% Mg Mg α-Al Si 0min 3min Mg Si 1.50% Al-Si 2 1.65%(577 )25) 560 α-Al Mg Si 560 Al Mg Si x[m] 26)
Intermetallic compound Al Fe Mg Si Reference
Chinese script-like 72 1 17 10
Present work
Plate-like 65 2 20 13
Plate-like
(Solution treated for 30 min) 89 3 0 8
-Al8FeMg3Si6 52 10 13 28 B.Closset
18)
(2.1) (2.2) D [m2/s] t [s] D0 [m2/s] Q [kJ/mol] R (8.3145[J mol-1 K-1]) T [K] Mg Si D0 1.24 10-4 3.5 10-5 Q 131 124 27) α-Al Mg Si 3min Mg Si x Mg Si 11.4 m 10.2 m Mg Mg 102µm×136µm 102µm×136µm Mg 2.5.1 5 66µm 3min Mg 11.4µm Mg ( 66µm) 17% Mg 3min -Al Mg 2.5.5 3min -Al Mg Mg -Al Mg -Al Mg Mg Si -Al -Al Mg 28) -Al Mg 2.5.6 ( 2.5.6 (a)) Mg -Al ( 2.5.6 (b) 3min ) Mg Mg -Al ( 2.5.6 (c) 3min ) -AlFeSi Mg -Al Mg
x = Dt
€
D = D
0exp(−
Q
RT
)
20 m -Al Mg 3min Si Si 2.5.5 -Al Mg Si Mg2Si Mg2Si Mg Si -Al 2.5.5 α-Al Mg Si
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
0
5
10 15 20 25 30
C
on
cen
tr
at
ion
of
M
g
(m
as
s%)
Solution time ,
t
/ min
C
on
cen
tr
at
ion
of
S
i (m
as
s%)
A
s-c
as
t
EF
0.5
Mg
Si
Primary α-aluminum phase
Eutectic
region
Analysis
points
2.5.6 Mg (a) (b) (c) 2.5.1.3 -Al Mg -AlFeSi Mg ( 2.2.7 a.b) -AlFeSi ( a,b c,d ) 2.5.7 2.5.2 c,d a,b 3.2 1.8 2.5.8 a,b 1,3,5 7min c,d Mg (a) (b)
Primary α-aluminum phase Eutectic Si particle π-phase(Chinese script-like) (c) β-AlFeSi(not containing Mg) π-phase (Plate-like)
-Al Mg 1min Mg Mg Fe ( -AlFeSi) 3min Mg α-Al Mg 5min Mg α-Al Mg c,d Mg -AlFeSi c,d 2.5.9 c,d Mg 3min 3.2 1.8 a,b 7min Mg 5min 2.5.8 7min Mg Fe Si Mg2Si 560 Al-Si-Mg2Si 3 559 11) Mg2Si 560 2.5.2 Specimen c,d a,b DAS (µm) 21.7 33.9 Mean area (µm2) - phase (Chinese script-like) 26.0 82.4 - phase (Plate-like) 16.4 25.6 Eutectic Si particle 0.9 3.6
2.5.8 EPMA
2.5.9
Solution time (min)
0 3 As-cast 1 5 7 Specimen Intermetallic compounds -phase (Chinese script-like) -phase (Plate-like) Mg2Si c,d exist (containing Mg) exist exist transformation (not containing Mg) a,b c,d a,b c,d a,b
2.5.1.4 Si 2.5.10 ( c,d) Si Si ( / ) 2.5.11 1 5 0min 3min 2.5.5 3min Si Si 3min Si 3min 2.5.10
2.5.11 Si
2.5.2
2.5.2.1 0.2% -Al 2.5.12 -Al 10 2 8 8 -Al 0.2% 0min 3min 21% 0.2% 23% 3min0
2
4
6
8
10
12
1.0
1.5
2.0
2.5
3.0
0
5 10 15 20 25 30
M
ea
n
a
rea
,
A
/
m
2M
ea
n
in
ter
pa
rt
ic
le
di
st
an
ce
, d
/
m
M
ea
n
a
sp
ec
t
ra
ti
o
Solution time , t / min
A
s-c
as
t
EF
0.5
0
Mean area
Mean aspect ratio
3min 3min Si 560 3min ( EF 535 480min) 2.5.12
60
65
70
75
80
85
V
ic
ker
s
h
ar
dn
es
s
,
HV
100
110
120
130
140
150
160
0
10
20
30
40
50
60
0
5 10 15 20 25 30
0.
2%
pr
oof
st
res
s
,
σ
0.2/
M
Pa
Solution time,
t
/ min
Fr
ac
tu
re
el
on
ga
ti
on
,
ε
(%)
Fracture elongation
A
s-c
as
t
EF
0.2% proof stress
2.5.2.2 Mg Si 2.5.12 -Al 0.2% Mg Si 2.5.5 -Al Mg Si 0.2% ( ) 2.5.13 3min α-Al Mg Si 3min -Al Mg Si 29) Cottrell30) Friedel31) Δσ (2.3) ( 0.34732)) M (3.0629)) ( 26.5[GPa]32)) [%] c [at.%] (1) c 3min -Al Mg Si ( ) (Mg ΔσMg Si ΔσSi) 2.5.5 3min -Al Mg Si 0.20[at.%] 0.16[at.%] Al Mg Si 0.96[%] -0.6[%]33) ΔσMg ΔσSi
12[MPa] 5[MPa] 17[MPa] 2.5.12
3min 0.2% 27[MPa] (1) 60% 2.5.5 3min Mg Si Mg Si ( ) 29) 3min -Al Mg Si Al
Δσ =
3
3/42
1+ν
1−ν
#
$
%
&
'
(
3/2Mµ ε
3/2c
Al (1) Al-Mg-Si Si 34) 35) Mg2Si Al-7%Si-Mg Si 48 ( 5min) 3,000min(50 ) 3% ( 2.8 ) 36) -Al Mg Si ( ) α-Al Mg Si (n ) 2.5.14 n n 1% 0min n 3min n n 37) 38) Al-Mg 2 Mg 39) 3min -Al Mg Si 2.5.12 -Al Mg Si Mg Si
2.5.13 α-Al Mg Si 2.5.14 n
120
125
130
135
140
145
150
155
0.1
0.2
0.3
0.4
0.5
0.6
1.1
1.2
1.3
1.4
1.5
1.6
Mg
Si
0.
2%
pr
oof
st
res
s
,
0.2/ M
Pa
Concentration of Mg ,
CMg
(mass%)
Concentration of Si ,
CSi
(mass%)
As-cast
IH:0min
IH:3 to 30min & EF
0.10
0.15
0.20
0.25
0
5
10
15
20
25
30
35
n value
As-cast
IH:0min
IH:3min
IH:10min
IH:30min
EF
True strain ,
ε
t(%)
0.05
2.5.2.3 Si DAS Fe Si 40) 2.68[Mg/m3] AC4CH 41) DAS Fe (0.12%) Fe Fe 42) Si Si Si 43) 3min Si 3min Mg Si 3min Si -Al Si SEM 2.5.15 3min Si Si 40) X CT 44),45) 46) Si Si Si Si 2.5.16
Si ( 2.5.16 (a)) ( 2.5.16 (b)) Si 45)( 2.5.16 (c)) Si 24) Si ( 2.5.16 (d)) 2.5.16 3 1 5 6 Si 5 6 Si Si Si Si 1 5 47) 2.5.15 SEM (2.4) D [µm] L [µm] nL Si 2.5.17 (D) Si ( ) (2) D 47) Hensler 48) 1.62 Dc(Dc=1.62D) 2.5.17 (D) (Dc) 3min Si 3min Si 3min Si 3min 2.5.11 Si Si 43) Si
D =
L
n
LSi 2.5.15 2.5.16 (a) (b) (c) Si (d)
Loading direction
Loading direction
(b)
(d)
Dimple
Eutectic Si particle
(a)
α-aluminum phase
Hydrogen micropore
(c)
Damage
2.5.17 Si
2.6
Si
2.1.2 Si Si Si 10) Si Si SEM2.6.1
Si
2
4
6
8
10
12
2
4
6
8
10
12
D
Dc
Mean interparticle distance between
eutectic Si particles ,
d
/ m
M
ea
n
d
ia
m
et
er
of
di
m
pl
es
,
D
and
Dc
/ μ
m
Solution time : 3min
Solution time :10min
90.0 /s( ) 0.9 /s 2 560 0,3,10 30min 4 Si 2.6.1 2.6.2 90.0 /s ( 2.6.1) 6s 560 7 20s (560 ) 1 4 20s 560 40.0 /s ( 2.4.7 ) 40.0 /s Mg2Si ( 0min) 90.0 /s 40.0 /s Mg2Si Mg2Si Mg2Si 0.9 /s ( 2.6.2) 560 600s 4 (560 1 3 ) 2.6.1 (90.0 /s)
0
100
200
300
400
500
600
0
500
1000
1500
2000
Tem
per
at
u
re
,
T
/
time ,
t
/ s
530
535
540
545
550
555
560
565
570
5
10
15
20
25
30
Region of temperature depressionTo
30min 10min 3min 0min To ( ) 7 5 3 22.6.2 (0.9 /s) 2.6.3 0 3 30min 90.0 /s 0min Si 3min 0min Si 30min 0.9 /s 0min Si 0min 0.9 /s 90.0 /s Si 30min Si Si ( / ) 2.6.4 2.5.1.4 1 5 90.0 /s 0min 60% 3min 10min 30% 30min 84%
0
100
200
300
400
500
600
0
500
1000
1500
2000
2500
Tem
per
at
u
re
,
T
/
time ,
t
/ s
530
535
540
545
550
555
560
565
570
590
595
600
605
610
Tf
30min 10min 3min 0min Tf ( ) 4 4 40.9 /s 0min 90.0 /s
90.0 /s 14%
3min
13% 10min 49% 30min 86% 30min
90.0 /s 90.0 /s 10min 10min 0.9 /s 30min 30min 90.0 /s Si Chaudhury 10) 90.0 /s 0min 0min Si ( ) 0.9 /s 30min 90.0 /s Si Si SEM Si (HCl 15ml HF 10ml 90ml) 55 (HNO3 25ml 75ml) 4 Al SEM 2.6.5 0 3 30min Al Si Si 90.0 /s 0min Si 2 Si 2 Si 90.0 /s 3min Si 1 2 Si 90.0 /s 30min Si 0.9 /s 0min Si 90.0
/s 3min 1 2 0.9 /s 3min 0min 0.9 /s 30min Si 30min Si Si ( ) SEM Si (90.0 /s) 0min Si 0min Si SEM 90.0 /s 0min Si 2 2 Chaudhury 10) Al Si Si Si Si 90.0 /s 440 560 ( ) Si SEM 90.0 /s 2.6.6 Si Si 2.6.7 Si 500 2.6.8 Si SEM Si 1 2 Si 560 2 1 ( 2.6.8(a)) 2.6.9 500 Si Si Si 2 Si 2 Si Si Si
Si Al ( ) Al Si Si Si 3 ( ) 49) Al Si 2.5.1.2 (2.2) 560 Al Si D 5.8 10-13 [m2/s] ( D0 3.5 10-5 [m2/s] Q 124 [kJ/mol] R 8.3145 [J mol-1 K-1] T 833 [K] (560 ) ) Si Si Si Si Bracht 50) 28Si Si 855 Si D 2 5 10-15[m2/s] 855 Si Bracht 50) 560 D (0.6 1.0) 10-22[m2/s] Si Si Al Si Si (90.0 /s) Si Al ( ) Si 2 Si 0.9 /s Si 2 Si Si Al Si 2 Si Si Si (90.0 /s) ( 0min) Si Si Si 2.6.10 Si 1 2
(90.0 /s) Si Al Si ( ) 2 0.9 /s 2 Al Si Si Al Si Si Si
2.6.3 Si ( )
2.6.4 Si
1.0
2.0
3.0
4.0
5.0
1.5
2.0
2.5
3.0
3.5
4.0
0
5
10
15
20
25
30
Solution time , t / min
M
ea
n
a
rea
,
A
/
m
2M
ea
n
a
sp
ec
t
ra
ti
o
A
s-c
as
t
0
M
ea
n
in
ter
pa
rt
ic
le
di
st
an
ce
bet
w
een
eu
tec
ti
c
S
i p
ar
ti
cl
es
, l
/
m
Mean area
Mean interparticle distance
Mean aspect ratio
90.0 /s
0.9 /s
2.6.7 (90.0 /s) Si
1.0
1.5
2.0
2.5
3.0
3.5
1.0
1.5
2.0
2.5
3.0
450
500
550
600
M
ea
n
a
rea
,
A
m
2M
ea
n
a
sp
ec
t
ra
ti
o
Solution temp. , T /
A
s-c
as
t
0.5
0
0.5
Mean area
2.6.8 (90.0 /s) Si (SEM )
2.6.10 Si
0.9 /s_0min 0.9 /s_3min 0.9 /s_30min
90.0 /s_0min
Eutectic Si particles
As-cast 90.0 /s_3min 90.0 /s_30min
Eutectic Si particles / Al matrix interface
Al matrix
Eutectic Si particles
Diffusion of Si atoms
D iffu si on s peed Hi gh S low Staying time at high temp.+ +
E u tec ti c S i p ar ti cl es C oa rs en in g R efi n em en t2.6.2
2.6.11 2.6.12
0.2% 0.2%
10min 10min 10min 0.2%
2.5.1 Al (Mg Si) 0.2% 6% 0.2% 2.6.13 3min 3min (90.0 /s) 0min 30min 90.0 /s 0.9 /s 30min 2.6.13 2.6.11 0.2% 51) Al-Si Si Si Si 2.6.13 Si 2.6.11 0.2% ( 2.6.12) 90.0 /s 0.9 /s 6%(3min) 37%(10min) 10% SEM 2.6.14 Al 52) 58) 2.6.15
2.6.12 Si 0 3 30min 2.6.16 2.6.17 2.6.4 ( 2.5.2.3 ) 2.6.17 2.5.2.3 90.0 /s 0min 28% 5% 2.6.18 90.0 /s 0min Si 2 3min Al Si 90.0 /s 0.9 /s 2.6.11 90.0 /s 90.0 /s
2.6.11 0.2% 2.6.12
100
110
120
130
140
150
160
0
5
10
15
20
25
30
0.
2%
pr
oof
st
res
s
, σ
0.2/M
Pa
A
s-c
as
t
Solution time , t / min
90.0 /s
0.9 /s
0
5
10
15
20
25
0
5
10
15
20
25
30
A
s-c
as
t
Solution time ,
t
/ min
Fr
ac
tu
re
el
on
ga
ti
on
,
ε
(%)
90.0 /s
0.9 /s
2.6.13
2.6.14 SEM (a) (b) 90.0 /s 0min (c) (d)
0.9 /s 0min
33.0
34.0
35.0
36.0
37.0
38.0
0
5
10
15
20
25
30
90.0 /s
0.9 /s
Solution time ,
t
/ min
E
lec
tr
ic
al
c
on
du
ct
iv
it
y,
ρ
(I
A
C
S
%)
A
s-c
as
t
2.6.15
0
5
10
15
20
25
0
5
10
15
20
25
30
90.0 /s_ 0min
90.0 /s_ 3min
90.0 /s_10min
90.0 /s_30min
0.9 /s_ 0min
0.9 /s_ 3min
0.9 /s_10min
0.9 /s_30min
As-cast
Fr
ac
tu
re
el
on
ga
ti
on
,
(%)
Area ratio of defects
in fracture surface ,
f
(%)
2.6.17
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
As-cast
90.0 /s
0.9 /s
M
ea
n
d
ia
m
et
er
of
di
m
pl
es
,
D
/
m
Mean interparticle distance between
eutectic Si particles ,
d
/ μm
0min
3min
10min
2.6.18 90.0 /s_0min (a) (b) (c) Si (d)
2.7
FSP FSP ( ) 1. 2.3 (L=26mm) 4 4 2. 2.4 (40.0 /s) Dimple Eutectic Si particle Hydrogen micropore DamageA
s-c
as
t
90.0
/s
_0
m
in
(a)
(b)
(c)
(d)
Loa
di
n
g
di
rec
ti
on
40.0 /s Si 560 ( : 40.0 /s) Si 3min Si Si Si 40.0 /s ( 1.5µm2) 4.0 /s 168% 0.4 /s 149% 3. 2.5 (40 /s) (560 ) 0min 30min) Mg Si Si Mg2Si Mg Mg2Si 560 3min Mg -AlFeSi Mg Mg Mg Mg 3min -AlFeSi 40.0 /s 560 3min -Al 0.2% 21% 23% 3min 0.2% (535 -480min) 3min 30min 3min -Al Mg Si 0.2%
-Al Mg Si Si 3min Si 40 /s 560 3min (535 -480min) FSP 560 -3min 4. 2.6 Si SEM 90.0 /s 560 ( 0min) Si SEM Si 2 560 Si 0.9 /s 560 Si 30min Si ( ) Si Si 10min 10min (90.0 /s) 6% Si 90.0 /s 0.9 /s 10% SEM Al
2.8
1
560 30min
10000min 2.8.1 2
No.1 No.2 0.8 IACS%
2.2.1 c, d No.2 3000min 3% Al 36) 3000min 2880min(48h) 2.8.1
34.0
35.0
36.0
37.0
38.0
39.0
40.0
10
10
210
310
4No.1
No.2
time , t / min
E
lec
tr
ic
al
c
on
du
ct
iv
it
y,
(I
A
C
S
%)
A
s-c
as
t
1) D.L.Zhang L.H.Zheng D.H.StJohn J.Light Metals 2 (2002) pp.27-36 2) S.K.Chaudhury L.Wang D.Apelian AFS Transactions (2004) pp.289-304
3) Vol.55 No.4 (2005) pp.159-163.
4) Y.Harada S.Tamura S.Kumai Mater. Trans. Vol.52 No.5 (2011) pp.848-855.
5) (
) No.58(2012) pp.57-61.
6) Vol.40 No.8 (1990) pp.533-537.
7) J.C.Choi H.J.Park B.M.Kim J. Mater. Process. Technol. Vol.87 (1999) pp.46-52. 8) H.K.Jung C.G.Kang J. Mater. Process. Technol. Vol.104 (2000) pp.244-253. 9)
(2012).
10) S.K.Chaudhury D.Apelian Metal. Mater. Trans. A Vol.37A (2006) pp.763-778. 11) ASM Metals Handbook 8th ed. (1973) ASM pp.360.
12) Vol.23 No.8 (1973) pp.354-359.
13) : Vol.20 No.5 (1970) pp.247-255.
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15) S.G.Shabestari : Mater. Sci. Eng. A 383 (2004) pp.289-298.
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18) B.Closset J.E.Gruzleski : Metall. Trans. A Vol.13A No.6 (1982) pp.945-951
19) G.Gustafsson, T.Thorvaldsson, G.L.Dunlop : Metall. Trans. A Vol.17A No.1 (1986) pp.45-52 20) Q.G.Wang, C.J.Davidson : J. Mater. Sci. Vol.36 (2001) pp.739-750
21) R.Krendelsberger, P.Rogl, A.Leithe-Jasper, C.J.Simensen : J. Alloys and Compounds Vol.264 (1998) pp.236-239
22) A.M.Kliauga, E.A.Vieira, M.Ferrante : Mater. Sci. Eng. A Vol.480 (2008) pp.5-16
23) J.A.Taylor, D.H.St John, J.Barresi, M.J.Couper : Mater. Sci. Forum Vols.331-337 (2000) pp.277-282
24) K.Lee, Y.N.Kwon, S.Lee : J. Alloys and Compounds Vol.461 (2008) pp.532-541
25) 40 ( ) (1991) pp.231.
27) 40 ( ) (1991) pp.4
28) ( ) (2005) 299
29) Vo.60 No.9 (2010) pp.458-466
30) A.H.Cottrell Strength of Solids (Phys. Soc. London) (1948) pp.30-36. 31) J.Friedel Dislocations (Pregamon Press New York) (1964) pp.205
32) J.P.Hirth, J.Lothe : Theory of Dislocations second edition (Wiley New York) (1982) pp.837 33) Vol.60 No.8 (2010) pp.411-418 34) Vol. 51 No.4 (2001) pp.215-221 35) Vol.28 No.11 (1978) pp.531-540 36) Vol.28 No.11 (1978) pp.553-557 37) Vol.45 No.4 (1995) pp.193-197 38) Vol.31 No.5 (1981) pp.359-368 39) Vol.41 No.2 (1991) pp.119-125 40) Vol.41 No.6 (1991) pp.398-405 41) 40 ( ) (1991) pp.520 42) Vol.64 No.8 (1992) pp.531-536
43) Mahmoud Fouad HAFIZ Vol.43 No.9 (1993)
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45) H.Toda H.Ooga K.Uesugi M.Kobayashi Mater. Trans. Vol.50 No.9 (2009) pp.2285-2290
46) Vol.59 No.1 (2008)
pp.30-34
47) Vol.44 No.1 (1994) pp.48-56 48) J.H.Hensler J. Ins. Metals 96 (1968) 190
49) ( ) (2005) pp.299
50) H.Bracht E.E.Haller R.C.Phelps Phys. Rev. Lett. Vol.81 No.2 (1998) pp.393-396.
51) Vol.41 No.8 (1991) pp.510-514
52) C.H.Caceres B.I.Sellong Mater. Sci. Eng. A220 (1996) pp.109-116.
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55) J.A.Francis G.M.Delphine Cantin Mater. Sci. Eng. A407 (2005) pp.322-329. 56) A.M.Gokhale G.R.Patel Scr. Mater. Vol.52 (2005) pp.237-241.
57) C.D.Lee Mater. Sci. Eng. A464 (2007) pp.249-254.
3
Si
3.1
3.1.1
FSP
Si
1 AC4CH ECAP ARB
-Al Si Si Si Si Si Si ECAP Si Si
3.2
! AC4CH (JIS ) Ar Sr Si ( ) 3.2.1 3.2.1 15mm 40mm 5mm ECAP3.2.1 AC4CH (mass%) 3.2.1 ! 3.2.2 ECAP ECAP 550 2 ( ) 1) ECAP Si ECAP ECAP 350 30min
Si
Fe
Cu
Mn
Mg
Zn
Ti Sr(ppm) Al
Sample 7.4
0.11 <0.01 0.01 0.34 <0.01 0.12
107
bal.
8mm
Ingot
190mm
22mm
40mm
15mm
5mm
3.2.2 ! ECAP ECAP Si ECAP 3.2.3 5mm 15mm 120 16 ECAP Route A 2) ECAP MoS2 2 4 8 4 ECAP 2 ECAP N 3)
ε
N=
N
3
2 cot
φ
2
+
ψ
2
!
"
#
$
%
& +ψ cosec
φ
2
+
ψ
2
!
"
#
$
%
&
'
(
)
*
+
,
(3.1) N ECAP ECAP 3.2.2550
2h
350 -30min
Tem
p.
time
ECAP
2,4,6 and
8pass
• Tensile test
• Microstructure observation
3.2.3 ECAP 3.2.2 ECAP ! ECAP Si ( ) USB (L-830) (Scion Image) Si SEM( S-4500) Si
Φ = 120°
Channel
(Section size :
5mm×15mm)
ECAP
die
ψ = 16°
Specimen
Rou
te A
Number of ECAP PassN
2 4 6 8 Equivalent plastic strainε
N 1.28 2.56 3.84 5.12! Si AG50kNG 3.2.4 ECAP 10mm 5mm 2 ( 1mm 4mm) 4 2 ECAP 2.1 10-3s-1 0.2% 3.2.4
12mm
23mm
40mm
7.5mm
15mm
5mm
10mm
5mm
4mm
1mm
1mm
Tensile specimen
Tensile direction
Extrusion direction
3.3
3.3.1 ECAP
ECAP 3.3.1 5mm 15mm X 5mm 40mm Y 15mm 40mm Z X Y Z -Al ECAP 2 X Z Y Z 2 -Al Z ECAP X 2 Y ECAP Si Z Z ECAP ECAP 2),4) Wu 4) 3.3.2 ECAP (Route A) Y ECAP ECAP ECAP ( ) 3.3.3 ECAP Y ECAP Si Si ( ) 6 ECAP Si 6 Si 3.3.1 ECAP Si Wu 4) 6 Y Si Furukawa 2) ECAP ( Furukawa 2) ) Furukawa 2)Route A ECAP ECAP X Z
Y Wu 4)
ECAP Z
Furukawa 2)
( 3.3.1 ) 3.3.1 ECAP
3.3.1 ECAP (a) ECAP (b) 2 (c)
3.3.2 Wu 4) ECAP
ECAP die
Channel
Specimen
Shear
plane
Shear
directions
E
xt
ru
si
on
d
ir
ec
ti
on
E
xt
ru
si
on
d
ir
ec
ti
on
θ
3.3.3 ECAP Y (a) ECAP (b)
2 (c) 4 (d) 6 (e) 8
3.3.1 ECAP Y
Number of ECAP Pass
N
0
1
2
3
4
5
6
7
8
Inclination
angle
θ
(deg.)
Present works
25
14
9
10
3.3.2
Si
3.3.1 Si 2 5) ff =
1−V
VN
L (3.2) VV 2 NL 2 2 rr =
3V
V4N
L (3.3) f (3.2) (3.3)f =
4r(1−V
V)
3V
V (3.4)δ =
2
3
r
mπ
V
V!
"
#
$
%
&
1/2− 2
(
)
*
+*
,
-*
.*
(3.5) rm 2 2 2 2 Si Si -Al Si Si Si 3.3.4 ( 20 m 20 m )Si ( 3.3.4 Si Si ) Si -Al Si Si Si Si ( Si ) ( Si ) (Coefficient of Variation CV ) CV Si CV ( Si Si ) Si CV Si Si Si 102 m 136 m 102 m 136 m Si ( -Al Si ECAP ) ECAP 8 X 10 10 m 10 m 20 m 20 m 30 m 30 m 40 m 40 m 4 Si 3.3.5 20 m 20 m Si 20 m 20 m -Al Si ECAP 8 20 m 20 m Si Si Si
20 m 20 m ECAP Si ECAP 2 4 8 Si 3.3.6 3.3.7 (Y 3.3.3 ) X ( 3.3.6) -Al ECAP 2 -Al Si Y ( 3.3.3) -Al ECAP 2 -Al Si ECAP Si (ECAP Si 1 ) Z ( 3.3.7) ECAP Si 20 m 20 m Si 3.3.8 3.3.10 3.3.8 3.3.10 10 X ( 3.3.8) Si ECAP Si Si Y ( 3.3.9) X ECAP Z ( 3.3.10) ECAP ECAP Si ( ) ( ) (CV ) 3.3.11 X ECAP 2 CV 40% Y ECAP CV 8 ECAP CV 56% Z ECAP CV 3.3.3 3.3.6 3.3.7 Si 3.3.11 CV CV Si Si
3.3.4 Si
Fr
eq
u
en
cy
Number of eutectic Si particles
in a grid
As-start
ECAP processed
Count of number of eutectic Si particles in a grid
Fr
eq
u
en
cy
Number of eutectic Si particles
in a grid
Calculation of coefficient of variation (
CV
)
CV =
σ
µ
σ : standard deviation
µ : arithmetic mean
136 µm
102 µm
Grid size : 20µm×20µm
3.3.5 Si 0 100 200 300 400 500 600 0 2 4 6 8 10 0 10 20 30 40 50 60 0 4 8 12 16 20 24 0 5 10 15 20 25 30 0 10 20 30 40 50 0 5 10 15 0 10 20 30 40 50 60 70 80 Number of eutectic Si particles in a grid , N 0 100 200 300 400 500 600 0 2 4 6 8 10 Fr eq u en cy 0 10 20 30 40 50 60 0 4 8 12 16 20 24 Fr eq u en cy 0 5 10 15 20 25 30 0 10 20 30 40 50 Fr eq u en cy 0 5 10 15 0 10 20 30 40 50 60 70 80 Fr eq u en cy Number of eutectic Si particles in a grid , N
As-start
ECAP _ 8 pass
10µm
×
10µm
20µm
×
20µm
30µm
×
30µm
40µm
×
40µm
G
ri
d
si
ze
3.3.6 ECAP X (a) ECAP (b) 2
3.3.7 ECAP Z (a) ECAP (b) 2
3.3.8 X Si (a) ECAP (b) 2 (c) 4 (d) 6 (e) 8
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
0
10
20
30
40
50
60
0
5
10
15
20
25
30
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
Number of eutectic Si particles
in a grid ,
N
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Number of eutectic Si particles
in a grid ,
N
Specimen
(a)
(b)
(c)
3.3.9 Y Si (a) ECAP (b) 2 (c) 4 (d) 6 (e) 8
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Number of eutectic Si particles
in a grid ,
N
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
Number of eutectic Si particles
in a grid ,
N
0
10
20
30
40
50
60
0
5
10
15
20
25
30
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
Specimen
(a)
(b)
(c)
(d)
(e)
3.3.10 Z Si (a) ECAP (b) 2 (c) 4 (d) 6 (e) 8
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Number of eutectic Si particles
in a grid ,
N
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
Number of eutectic Si particles
in a grid ,
N
0
10
20
30
40
50
60
0
5
10
15
20
25
30
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Fr
eq
u
en
cy
Specimen
(a)
(b)
(c)
(d)
(e)
3.3.11 ECAP CV
3.3.3
Si
Si (CV ) ECAP 0.2% 3.3.12 ECAP 6 ECAP 78MPa ECAP 125MPa ECAP ECAP ECAP (0.2% ) ECAP 3.3.13 1.96N (200gf) 15s ECAP 2 84%0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
2
4
6
8
C
oeffi
ci
en
t
of
va
ri
at
ion
,
CV
Number of ECAP processed pass
X plane
Y plane
Z plane
1.0
A
s-s
ta
rt
6 2 350 30min ECAP ECAP ECAP ECAP Si ECAP 3.3.14 ECAP ECAP 8 49% 64% 54% 6 3.3.12 3.3.15 ECAP 3.3.16 Si Si Si 3.3.12 ECAP 0.2%
60
70
80
90
100
110
120
130
140
0
2
4
6
8
0.
2%
pr
oof
st
res
s
,
0.2/ M
Pa
Ten
si
le
st
ren
gt
h
,
b/ M
Pa
A
s-s
ta
rt
0.2% proof stress
Tensile strength
3.3.13 3.3.14 ECAP
30
40
50
60
70
80
90
0
2
4
6
8
Number of ECAP processed pass
V
ic
ker
s
h
ar
dn
es
s
,
HV
Before annealing
After annealing
A
s-s
ta
rt
0
10
20
30
40
50
0
2
4
6
8
Fr
ac
tu
re
el
on
ga
ti
on
,
(%)
U
n
ifor
m
el
on
ga
ti
on
,
u(%)
Loc
al
el
on
ga
ti
on
,
l(%)
Fracture elongation
Uniform elongation
Local elongation
A
s-s
ta
rt
3.3.15 (a) ECAP (b) 2 (c) 4
3.3.16 Si (ECAP 8 ) Si 3.3.17 3.3.19 ECAP CV ( ) X ( 3.3.17) ECAP X X Si ECAP CV ( Si ) ECAP CV CV Y ( 3.3.18) ECAP CV CV CV CV Z ( 3.3.19) ECAP CV CV X Si Y Si 3.3.20 (Y Z ) Y
Z 3 Si 3.3.21 ECAP CV ((CVX+CVY+CVZ)/3) CV CV Si Si CV Si Si 3.3.17 X CV
60
80
100
120
140
160
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
E
lon
ga
ti
on
,
(%)
0.
2%
pr
oof
st
res
s
,
0.2/
M
Pa
Ten
si
le
st
ren
gt
h
,
b/
M
Pa
Coefficient of variation of X plane , CV
XFracture elongation
Uniform elongation
Local elongation
Tensile strength
0.2% proof stress
A
s-s
ta
rt
ECAP processed
3.3.18 Y CV 3.3.19 Z CV