低欠陥ダイヤモンド簿膜の作製
著者 渡辺 一郎
著者別表示 Watanabe Ichiro
雑誌名 平成11(1999)年度 科学研究費補助金 基盤研究(C) 研究成果報告書概要
巻 1997 1999
ページ 2p.
発行年 2001‑10‑22
URL http://doi.org/10.24517/00066002
Creative Commons : 表示 ‑ 非営利 ‑ 改変禁止 http://creativecommons.org/licenses/by‑nc‑nd/3.0/deed.ja
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1999 Fiscal Year Final Research Report Summary
Synthesis of Diamond Films with Low Defects
Research Project
Project/Area Number
09650011
Research Category
Grant-in-Aid for Scientific Research (C)
Allocation Type
Single-year Grants
Section
⼀般
Research Field
Applied materials science/Crystal engineering
Research Institution
Kanazawa University
Principal Investigator
WATANABE Ichiro Kanazawa University, Faculty of Engineering, Professor, ⼯学部, 教授 (70019743)
Co-Investigator(Kenkyū-buntansha)
SAKUTA Tadahiro Kanazawa University, Faculty of Engineering, Professor, ⼯学部, 教授 (80135318)
Project Period (FY)
1997 – 1999
Keywords
diamond film / radio frequency CVD / ESR / textured film / carbon trifluoride / dangling bond
Research Abstract
The synthesis of diamond films with paramagnetic defects as low as possible was performed using a radio-frequency (13.56 MHz) plasma CVD apparatus and an infrared-radiation heater. We tried to synthesize diamond films under various conditions using a mixture gas of ethyl alcohol and carbon trifluoride (CHFィイD23ィエD2) diluted with hydrogen. Next, we synthesized (100)-textured diamond films on (100)-silicon substrates from a source gas of methane
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Published: 2001-10-22
Research Products
(2 results)All Other All Publications (2 results)
URL: https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-09650011/096500111999kenkyu_seika_hokoku_
and hydrogen using microwave plasma CVD method, because we considered that a reduction of defects can be realized if the films are composed of textured diamond grains with a large size as possible. As a result of various evaluations of these films, the following facts were clarified.
1. When ethyl alcohol and carbon trifluoride are used, diamond films can be obtained at a low-deposition temperature of 350 ℃ in a range of trifluoride concentration between 0.1 and 0.6%.
2. A high-quality film without nondiamond components can be obtained at deposition temperatures of 400 to 500 ℃. When carbon tetrafluoride was used, the highest-quality film was obtained at 550 ℃. Thus we realized a considerable reduction of deposition temperature by the use of the trifluoride.
3. The lowest value of paramagnetic defect density is 7 x 10ィイD117ィエD1 cmィイD1-3ィエD1. This value is comparable to that in the film grown by using the tetrafluoride.
4. In the textured films, the size of crystal-grain increases and the density of grain-boundary decreases with increasing the film thickness. Thereby, the density of paramagnetic defects decreases, but it is higher by about one order of magnitude compared with that in the untextured films with high quality.
5. The textured films are subjected to a compressive stress. The density of paramagnetic defects is assumed to be increased by this stress.
[Publications] Yuhsuke Kawaguchi: "Paramagnetic Defects in Textured Diamond Films Synthesized by Chemical Vapor Deposition"Japanese Journal of
Applied Physics. 39-4A. (2000)
[Publications] Yuhsuke Kawaguchi and Ichiro Watanabe: "Paramagnetic Defects in Textured Diamond Films Synthesized by Chemical Vapor
Deposition"Japanese Journal of Applied Physics. Vol. 39, No. 4A. (2000)
