Memoirs of the Osaka Institute of Technology,Series A Vol.45,No.2 (2000) pp.23~74
分子線エピタキシ
ー法でGaAs(lOO)甚板上に成長した高品質CdTe(lOO)
薄膜とInSb/CdTeおよびPbTe/CdTeヘテロ接合
小池
一歩・矢野満明
工学研究科 電気電子工学専攻
(2000年 9 月 29 日受理）
Molecular beam epitaxial growth of InSb/CdTe and PbTe/CdTe heterosystems
using high-quality CdTe(lOO) films on GaAs(lOO) substrates
by
Kazuto KOIKE and Mitsuaki YANO
Major in Electronics and Electrical Engneering, Engineering Studies (Manuscript received September 29, 2000)
Abstract
Molecular beam epitaxial growth of high-quality CdTe films on GaAs(lOO) substrates and its appli cation to InSb/CdTe and PbTe/CdTe are described. The target of this work is to develop novel heter ojunctions applicable for mid-infrared optical devices that are integrated monolithically on GaAs(lOO) substrates with electrical circuitry. High-quality CdTe growth on GaAs substrates is the essential technology for this purpose. However, CdTe films on GaAs have been known to include misoriented domains and structural defects due to the presence of large lattice mismatch. It is shown in this report that the use of a sulfur-treated GaAs substrate is effective in eliminating the misorientation, and the crystalline quality of these single -domain CdTe films is further improved by an annealing technique combined with MnTe capping. High-quality CdTe overgrowth at low temperatures is also found probable on the annealed MnTe/CdTe films by using a (CdTe)m(MnTe)n superlattice as a buffer layer.
Heterojunctions of InSb/CdTe and PbTe/CdTe are successfully grown on GaAs(lOO) substrates using high-quality Cd Te films.
