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Erratum: “Oxygen Enhanced Surface Roughening of Si(111) Induced by Low-Energy Xe+ Ion Sputtering” [J. Surf. Anal. 15, 325 (2009)]

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Journal of Surface Analysis Vol.16, No. 1 (2009) p. 73−73

T. Miyagawa et al. Erratum: “Oxygen Enhanced Surface Roughening of Si(111) Induced by Low-Energy Xe+ Ion Sputtering” [J. Surf. Anal. 15, 325 (2009)]

−73−

Erratum

Erratum: “Oxygen Enhanced Surface Roughening of

Si(111) Induced by Low-Energy Xe

+

Ion Sputtering”

[J. Surf. Anal. 15, 325 (2009)]

Takuya Miyagawa, Kousuke Inoue, and Masahiko Inoue*

Dept. Electric & Electronic Eng., Facult. Eng., Setsunan Univ. 17-8 Ikedanakamachi, Neyagawa, Osaka 572-8508, Japan

*[email protected]

(Received: May 11, 2009; Accepted: May 13, 2009)

Figure 4 of the above paper should be replaced with the following figure.

Fig.4 Attenuation lengths of secondary electrons evaluated by Seah & Dench’s equation [7] in Si and SiO2 samples.

Figure 4 of the above paper should be replaced with  the following figure.

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