ON Semiconductor Is Now

To learn more about onsemi™, please visit our website at www.onsemi.com

Is Now

onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

0U — N-Cha nnel Un iFE T TM Ultra FRFET TM MO SFE T

FDD5N50U

N-Channel UniFET ^TM Ultra FRFET ^TM MOSFET

500 V, 3 A, 2.0 Ω

Features

• R

= 1.65

(Typ.) @ V

= 10 V, I

= 1.5 A

• Low Gate Charge (Typ. 11 nC)

• Low C

(Typ. 5 pF)

• 100% Avalanche Tested

• RoHS Compliant

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

Description

UniFET

MOSFET is

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFET

MOSFET has much superior body diode reverse recovery performance. Its t

is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

D-PAK G S

D

G

S D

MOSFET Maximum Ratings

^T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDD5N50UTM

WS Unit

V

Drain to Source Voltage 500 V

V

Gate to Source Voltage ±30 V

I

Drain Current - Continuous (T

= 25

C) 3

- Continuous (T

= 100

C) 1.8 A

I

Drain Current - Pulsed (Note 1) 12 A

E

Single Pulsed Avalanche Energy (Note 2) 275 mJ

I

Avalanche Current (Note 1) 3 A

E

Repetitive Avalanche Energy (Note 1) 4 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

Power Dissipation (T

= 25

C) 40 W

- Derate Above 25

C 0.3 W/

C

T

, T

Operating and Storage Temperature Range -55 to +150

C

T

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300

C

Symbol Parameter FDD5N50UTM_WS Unit

R

Thermal Resistance, Junction to Case, Max. 1.4

R

Thermal Resistance, Junction to Ambient, Max. 110 C/W

0U — N-Cha nnel Un iFE T TM Ultra FRFET TM MO SFE T

www.onsemi.com 2

Package Marking and Ordering Information

Electrical Characteristics T

= 25

C unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FDD5N50UTM

WS FDD5N50U DPAK Tape and Reel 330 mm 16 mm 2500 units

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

Drain to Source Breakdown Voltage I

= 250

A, V

= 0 V, T

= 25

C 500 - - V

BV

/

T

Breakdown Voltage Temperature

Coefficient I

= 250

A, Referenced to 25

C - 0.6 - V/

C

I

Zero Gate Voltage Drain Current V

= 500 V, V

= 0 V - - 25

μ

A

V

= 400 V, T

= 125

C - - 250

I

Gate to Body Leakage Current V

= ±30 V, V

= 0 V - - ±100 nA

V

Gate Threshold Voltage V

= V

, I

= 250

A 3 - 5 V

R

Static Drain to Source On Resistance V

= 10 V, I

= 1.5 A - 1.65 2.0

g

Forward Transconductance V

= 20 V, I

= 1.5 A - 4 - S

C

Input Capacitance

V

= 25 V, V

= 0 V, f = 1 MHz

- 485 650 pF

C

Output Capacitance - 65 90 pF

C

Reverse Transfer Capacitance - 5 8 pF

Q

Total Gate Charge at 10V V

= 400 V, I

= 5 A, V

= 10 V

(Note 4)

- 11 15 nC

Q

Gate to Source Gate Charge - 3 - nC

Q

Gate to Drain “Miller” Charge - 5 - nC

t

Turn-On Delay Time

V

= 250 V, I

= 5 A, V

= 10 V, R

= 25

(Note 4)

- 14 38 ns

t

Turn-On Rise Time - 21 52 ns

t

Turn-Off Delay Time - 27 64 ns

t

Turn-Off Fall Time - 20 50 ns

I

Maximum Continuous Drain to Source Diode Forward Current - - 3 A

I

Maximum Pulsed Drain to Source Diode Forward Current - - 12 A

V

Drain to Source Diode Forward Voltage V

= 0 V, I

= 3 A - - 1.6 V

t

Reverse Recovery Time V

= 0 V, I

= 5 A, dI

/dt = 100 A/

s

- 36 - ns

Q

Reverse Recovery Charge - 33 - nC

Notes:

1: Repetitive rating: pulse width limited by maximum junction temperature.

2: L = 61 mH, I_AS = 3 A, V_DD = 50 V, R_G = 25 Ω, starting T_J = 25°C.

3: I_SD ≤ 3 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting T_J = 25°C.

4: Essentially independent of operating temperature typical characteristics.

0U — N-Cha nnel Un iFE T TM Ultra FRFET TM MO SFE T Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4 5 6 7 8

0.1 1 10

150^oC

*Notes:

1. VDS = 20V 2. 250μs Pulse Test 25^oC

ID,Drain Current[A]

VGS,Gate-Source Voltage[V]

0.1 1 10

0.1 1 10

30

*Notes:

1. 250μs Pulse Test 2. TC = 25^oC VGS

=

10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

ID,Drain Current[A]

VDS,Drain-Source Voltage[V]

0.02

0 6 12 18

1.4 1.8 2.2 2.6

*Note: TJ = 25^oC VGS = 20V

VGS = 10V

RDS(ON)

[

]

ID, Drain Current [A]

0.4 1.0 1.6 2.2

1 10

*Notes:

1. V_GS = 0V 2. 250μs Pulse Test 150^oC

IS, Reverse Drain Current [A]

V_SD, Body Diode Forward Voltage [V]

25^oC 30

0.1 1 10

0 200 400 600 800 1000

C_oss C_iss

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd

Crss = Cgd

*Note:

1. V_GS = 0V 2. f = 1MHz

C_rss

Capacitances [pF]

V

, Drain-Source Voltage [V]

30 0 0 4 8 12

2 4 6 8 10

*Note: ID = 5A VDS = 100V

VDS = 250V VDS = 400V

VGS, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0U — N-Cha nnel Un iFE T TM Ultra FRFET TM MO SFE T

www.onsemi.com 4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area vs. Temperature

Figure 9. Maximum Drain Current vs. Case Temperature

Figure 10. Transient Thermal Response Curve

-75 -25 25 75 125 175

0.8 0.9 1.0 1.1 1.2

*Notes:

1. VGS = 0V 2. I_D = 250μA BVDSS, [Normalized] Drain-Source Breakdown Voltage

T

, Junction Temperature [

C ] ^{1 10 100 1000}

0.01 0.1 1

10

100μs

1ms 10ms

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area is Limited by R DS(on)

*Notes:

1. TC = 25^oC 2. TJ = 150^oC 3. Single Pulse

DC 20

25 50 75 100 125 150

0 1 2 3

ID, Drain Current [A]

T

, Case Temperature [

C ] 3.5

10

10

10

10

10

10

10

0.01 0.1 1

0.01 0.1 0.2

0.05

0.02 *Notes:

1. Z_θJC(t) = 1.4^oC/W Max.

2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * Z_θJC(t) 0.5

Single pulse

Thermal Response

[

]

Rectangular Pulse Duration [sec]

3

0.005

t1

PDM

t2

ZθJC(t), Thermal Response [oC/W]

t₁, Rectangular Pulse Duration [sec]

0U — N-Cha nnel Un iFE T TM Ultra FRFET TM MO SFE T

Figure 11. Gate Charge Test Circuit & Waveform

Figure 12. Resistive Switching Test Circuit & Waveforms

Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms V

V

10%

90%

t_d(on) t_r

t_on t_off

t_d(off) t_f

V

10V

V

R

DUT R

V

V

V

10%

90%

t_d(on) t_r

t_on t_off

t_d(off) t_f

V

10V

V

R

DUT R

V

V

V

IG = const.

0U — N-Cha nnel Un iFE T TM Ultra FRFET TM MO SFE T

www.onsemi.com 6

Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

V

+

_

Driver R

Same Type as DUT

V

• dv/dt controlled by R

• I

controlled by pulse period

V

L

I

V

10V ( Driver )

I

( DUT )

V

( DUT )

V

Body Diode Forward Voltage Drop

V

I

, Body Diode Forward Current

Body Diode Reverse Current I

Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Gate Pulse Period --- DUT

V

+

_

Driver R

Same Type as DUT

V

• dv/dt controlled by R

• I

controlled by pulse period

V

LL

I

V

10V ( Driver )

I

( DUT )

V

( DUT )

V

Body Diode Forward Voltage Drop

V

I

, Body Diode Forward Current

Body Diode Reverse Current I

Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Gate Pulse Period --- D = Gate Pulse Width

Gate Pulse Period

---

0U — N-Cha nnel Un iFE T TM Ultra FRFET TM MO SFE T Mechanical Dimensions

Figure 15. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB

Package drawings are provided as a service to customers considering

components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a

representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of

’s worldwide terms and

conditions, specif-ically the warranty therein, which covers

products.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910 Japan Customer Focus Center

Phone: 81−3−5817−1050

www.onsemi.com LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative

© Semiconductor Components Industries, LLC

❖