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Size effects andinfluences oflattice defects on the behavior of conduction electronsin

Agisland particles．

Eiji Anno

November，1986

Size effects andinfluences oflatticedefects on electronic properties ofAgislandpar−

ticles have beenstudied by observing with electron microscope and measuring the optical plasma resonance absorption．

From theinvestigation ofthe changein the particleshapeduetothesurfaceenergy reduction，itwasfoundthatthe particle shape depends both on the surface energyandthe particlesize，andthattheparticles on thefusedSiO2Substratearealmost sphericalbelow a diameter of about7nm．Below this size，the particle shapeisidenticaland the half width of the absorptionis easy to analyze．

FortheparticlesfromO・8to6nmin diameter，the size dependenceofthehalfwidth and ofits change withtemperaturewereinvestigatedbyconsidering the sizedependence oftheaverageenergylevelspacingandthelevelbroadening・Itwasshownthatthequan−

tum size effectisvalid from about2nm and the classicalsize effectis valid from about to 3nm，and thattheinfluence oflattice defectsappears above about3nm・

Thelattice−defectscatteringfrequenciescalculatedfromthehalf width showed that above about3nm thelattice defect densityincreaseswith particle size・This size depend−

encecouldbeinterpretedbytheparticlegrowthdue to the agglomeration，Whichforms lattice defects．

Thechangeintheabsorptionduetosulfurizationwasinvestigated・ltwasfound from thisinvestigation thatsulfurization occursatlatticedefectsin theparticlesalso・

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