Kohei Shima（嶋紘平） - 東北大学多元物質科学研究所

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Kohei Shima （嶋紘平）

Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai, 980-8577, Japan

Email: [email protected], [email protected]

2024.4.25 updated

Education

⚫ 2017 Mar. Ph.D. Materials Engineering, The University of Tokyo, Japan

⚫ 2013 Mar. M.S. Materials Engineering, The University of Tokyo, Japan

⚫ 2011 Mar. B.S. Materials Engineering, The University of Tokyo, Japan

Employment

⚫ 2023 Apr. to present Associate professor, IMRAM, Tohoku University, Japan

⚫ 2018 Aug. to 2023 Mar. Research associate, IMRAM, Tohoku University, Japan

⚫ 2017 Apr. Postdoc, IMRAM, Tohoku University, Japan

Scholarship

⚫ 2012 Oct. – 2017 Mar. The Japan Society for the Promotion of Science through the Program for Leading Graduate Schools (MERIT)

Award

[1] 第33回（令和4年度）トーキン財団奨励賞, 2023年3月：

“室温で共振器ポラリトンを呈するチップサイズ酸化亜鉛微小共振器の実現” 嶋紘平

[2] 43rd JSAP Outstanding Paper Award 2021, JSAP Paper Award（第43回(2021年度)応用物理学会優秀論文賞）

"Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures"

S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A.

Uedono

[3] The 13th International Conference on Nitride Semiconductors (2019), Best Poster Award:

"Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN"

S. Takashima, R. Tanaka, K. Ueno, H. Matsuyama, Y. Fukushima, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, and A.

Uedono

[4] The 19th International Workshop on Junction Technology (IWJT2019), Best Paper Award:

"Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes"

K. Shima, K. Kojima, A. Uedono, and S. F. Chichibu

[5] The Electrochemical Society, The Bruce Deal & Andy Grove Young Author Award 2015:

"Comparative Study on Cu-CVD Nucleation Using β-diketonato and Amidinato Precursors for Sub-10-nm-Thick Continuous Film Growth"

K. Shima, H. Shimizu, T. Momose, and Y. Shimogaki

[6] COMSOL Conference Tokyo 2015優秀ポスター賞, 2015年12月

“微細溝への薄膜堆積における溝内膜厚分布の時間変化の可視化”

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舩門佑一, 佐藤登, 嶋紘平, 福島康之, 百瀬健, 霜垣幸浩

[7] CVD反応分科会学生奨励賞, 化学工学会第47回秋季大会, 2015年9月：

“超高アスペクト比ミクロキャビティを用いたSiC-CVI法のモデリング”（27件中1位）

嶋紘平, 佐藤登, 舩門佑一, 杉浦秀俊, 中原拓也, 福島康之, 百瀬健, 霜垣幸浩

Funding

[1] 2023年度名古屋大学未来エレクトロニクス研究センター・若手活性化支援事業（代表：堀田昌宏）, 2024/4/1 ~

2025/3/31, ¥5,500,000

「窒化ガリウム欠陥科学構築に向けた空孔型および格子間原子型欠陥の物理究明」

[2] 2021年度野口遵研究助成, 2022/4/1 ~ 2023/3/31, ¥2,200,000

「ZnO微小共振器による室温ポラリトンレーザ発振の実証」

[3] 東北大学多元物質科学研究所, 多元研プロジェクト2021, 学内若手共同研究, ¥500,000

「SnS薄膜の電気伝導機構の解明と高移動度化」

[4] 科研費, 若手研究 (21K14544), 2021/4/1 ~ 2024/3/31, ¥4,680,000（直接経費：¥3,600,000）

「ZnO微小共振器への電流注入による室温ポラリトンレーザ発振」

[5] 笹川科学研究助成2021, 2021/4/1 ~ 2022/2/10, ¥550,000

「酸化亜鉛微⼩共振器における室温ポラリトンレーザ発振の実証」

[6] 科研費, 若手研究 (19K15453), 2019/4/1 ~ 2021/3/31, ¥4,290,000（直接経費：¥3,300,000）

「電流注入により室温発振するZnO系紫外ポラリトンレーザの実現」

[7] 丸文財団国際交流助成2018, ¥200,000

「A comparative study on SiO2/ZrO2 and SiO2/HfO2 distributed Bragg reflectors for ZnO-based microcavities」

[8] 科研費, 研究活動スタート支援 (17H06514), 2017/8/25 ~ 2019/3/31, ¥2,860,000（直接経費：¥2,200,000）

「電流注入により室温発振するZnOポラリトンレーザの創製」

[9] 東北大学多元物質科学研究所, 多元研プロジェクト2017, ¥600,000

「超低閾値コヒーレント光源実現に向けたZnO微小共振器構造の形成」

Patents

[1] Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride substrate United States Patent 20190135640 A1, May 9, 2019

Y. Mikawa, H. Ikeda, Q. Bao, K. Kurimoto, K. Shima, K. Kojima, T. Ishiguro, S. F. Chichibu

[2] 窒化ガリウム結晶、窒化ガリウム基板及び窒化ガリウム基板の製造方法

整理番号:2021P00294 特願2021-040961

三川豊, 池田宏隆, 包全喜, 栗本浩平, 嶋紘平, 小島一信, 石黒徹, 秩父重英

[3] Method of producing a silicon compound material and apparatus for producing a silicon compound material United States Patent 20190135640 A1, May 9, 2019

Y. Fukushima, K. Akazaki, Y. Tanaka, K. Akikubo, T. Nakamura, Y. Shimogaki, T. Momose, N. Sato, K. Shima, Y. Funato

[4] ケイ素化合物材料の製造方法およびケイ素化合物材料製造装置

再表2018/008642

福島康之, 赤崎梢, 田中康智, 秋久保一馬, 中村武志, 霜垣幸浩, 百瀬健, 佐藤登, 嶋紘平, 舩門佑一 [5] Heat-resistant composite material production method and production device

United States Patent 20160305015 A1, October 20, 2016

T. Nakamura, K. Hotozuka, Y. Fukushima, Y. Shimogaki, T. Momose, H. Sugiura, K. Shima, Y. Funato [6] Heat-resistant composite material production method and production device

United States Patent 20160297716 A1, October 13, 2016

T. Nakamura, M. Ishizaki, K. Hotozuka, Y. Fukushima, Y. Shimogaki, T. Momose, H. Sugiura, K. Shima, Y. Funato

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[7] 耐熱複合材料の製造方法及び製造装置

再表2015/129772

中村武志, 石崎雅人, 保戸塚梢, 福島康之, 霜垣幸浩, 百瀬健, 杉浦秀俊, 嶋紘平, 舩門佑一

[8] 耐熱複合材料の製造方法及び製造装置

特開2015-151587

中村武志, 保戸塚梢, 福島康之, 霜垣幸浩, 百瀬健, 杉浦秀俊, 嶋紘平, 舩門佑一

Original papers (refereed)

(h-index : 10) https://www.scopus.com/authid/detail.uri?authorId=55365156000

✓ First author : 15

✓ Co-author : 23 [1] Submitted [2] Submitted

[3] Improved nonradiative recombination lifetimes in bulk GaN crystals grown by the low-pressure acidic ammonothermal method

Applied Physics Letters (accepted).

K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, A. Uedono, S. Ishibashi, T. Ishiguro, and S. F. Chichibu

[4] Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Journal of Applied Physics (accepted).

S. F. Chichibu, K. Shima, A. Uedono, S. Ishibashi, H. Iguchi, T. Narita, K. Kataoka, R. Tanaka, S. Takashima, K. Ueno, M.

Edo, H. Watanabe, A. Tanaka, Y. Honda, J. Suda, H. Amano, T. Kachi, T. Nabatame, Y. Irokawa, and Y. Koide

[5] Vacancy-type defects and their trapping/detrapping of charge carriers in ion-implanted GaN studied by positron annihilation

Physica Status Solidi B 261, 2400060-1-10 (2024). [doi.org/10.1002/pssb.202400060]

A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, S. F. Chichibu, J. Uzuhashi, T. Ohkubo, S. Ishibashi, K.

Sierakowski, and M. Bockowski

[6] Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride Scientific Reports 14, 169-1-8 (2024). [doi.org/10.1038/s41598-023-50502-9]

K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, and S. F.

Chichibu

[7] Steady-state and dynamic characteristics of deep UV luminescence in rocksalt-structured MgxZn1-xO Journal of Applied Physics 134, 025102-1-11 (2023). [doi.org/10.1063/5.0155269]

T. Onuma, K. Kudo, M. Ono, W. Kosaka, K. Shima, K. Ishii, K. Kaneko, Y. Ota, T. Yamaguchi, K. Kojima, S. Fujita, S. F.

Chichibu, and T. Honda

[8] Polishing and etching damages of ZnO single crystals studied using time-resolved photoluminescence spectroscopy Journal of Applied Physics 134, 025302-1-10 (2023). [doi.org/10.1063/5.0149404]

T. Kasuya, K. Shima, and S. F. Chichibu

[9] Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

Applied Physics Letters 122, 201105-1-7 (2023). [doi.org/10.1063/5.0147984]

APL Special Collection on UV/DUV Light Emitters

S. F. Chichibu, K. Nagata, M. Oya, T. Kasuya, K. Okuno, H. Ishiguro, Y. Saito, T. Takeuchi, and K. Shima

[10] Band alignment and quality of Al0.6Ga0.4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE

Diamond & Related Materials 136, 110013-1-17 (2023). [doi.org/10.1016/j.diamond.2023.110013]

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S. Kono, K. Shima, S. F. Chichibu, M. Shimomura, T. Kageura, and H. Kawarada

[11] Kinetic study on heterogeneous nucleation and incubation period during chemical vapor deposition of silicon carbide

The Journal of Chemical Physics 158, 124704-1-12 (2023). [doi.org/10.1063/5.0133157]

JCP Special Topic on Nucleation: Current Understanding Approaching 150 Years After Gibbs K. Shima, Y. Otaka, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki

[12] Room-temperature nonradiative recombination lifetimes in c-plane Al1-xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

Journal of Applied Physics 132, 163102-1-10 (2022). [doi.org/10.1063/5.0106540]

L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A. Uedono, and S. F. Chichibu [13] Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by

chemical vapor deposition using carbon-free precursors

S. F. Chichibu, K. Shima, K. Kikuchi, N. Umehara, K. Takiguchi, Y. Ishitani, and K. Hara [Selected as Featured Article]

[14] Low-pressure acidic ammonothermal growth of 2-inch-diameter nearly bowing-free bulk GaN crystals Applied Physics Express 15, 055504-1-4 (2022). [doi.org/10.35848/1882-0786/ac67fc]

K. Kurimoto, Q. Bao, Y. Mikawa, K. Shima, T. Ishiguro, and S. F. Chichibu

[15] Identifying the mechanism of formation of chlorinated silane polymer by-products during chemical vapor infiltration of SiC from CH3SiCl3/H2

International Journal of Chemical Kinetics 54, 300-308 (2022). [doi.org/10.1002/kin.21559]

N. Sato, Y. Fukushima, K. Shima, Y. Funato, T. Momose, M. Koshi, Y. Shimogaki

[16] Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates Japanese Journal of Applied Physics 61, 025505-1-5 (2022). [doi.org/10.35848/1347-4065/ac4392]

K. Nishimoto, K. Shima, S. F. Chichibu, and M. Sugiyama

[17] Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg Applied Physics Letters 119, 182106-1-7 (2021). [doi.org/10.1063/5.0066347]

[Invited Paper] APL Special Collection on Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices [Selected as Editor’s Pick]

K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Kojima, A. Uedono, S. Ishibashi, and S. F. Chichibu [18] Conformal and stoichiometric chemical vapor deposition of silicon carbide onto ultradeep heterogeneous

micropores by controlling the initial nucleation stage

ACS Applied Materials & Interfaces 13, 53009-53020 (2021). [doi.org/10.1021/acsami.1c13117]

K. Shima, Y. Otaka, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki

[19] Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam Scientific Reports 11, 20660-1-8 (2021). [doi.org/10.1038/s41598-021-00102-2]

A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, and S. Ishibashi [20] Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN

substrate by metalorganic vapor phase epitaxy

L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, A. Uedono, S. Ishibashi, T. Takeuchi, M. Miyoshi, and S. F.

Chichibu

[21] Elementary gas-phase reactions of radical species during chemical vapor deposition of silicon carbide using CH3SiCl3

International Journal of Chemical Kinetics 53, 638-645 (2021). [doi.org/10.1002/kin.21470]

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N. Sato, Y. Funato, K. Shima, H. Sugiura, Y. Fukushima, T. Momose, M. Koshi, Y. Shimogaki

[22] Porous membranes as sacrificial layers enabling conformal chemical vapor deposition involving multiple film-forming species

ACS Applied Materials & Interfaces 12, 51016-51025 (2020). [doi.org/10.1021/acsami.0c14069]

K. Shima, Y. Funato, N. Sato, Y. Fukushima, T. Momose, and Y. Shimogaki

[23] Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN Scientific Reports 10, 18570-1-11 (2020). [doi.org/10.1038/s41598-020-75380-3]

S. F. Chichibu, K. Shima, K. Kojima, and Y. Kangawa

[24] Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process Applied Physics Letters 117, 071103-1-6 (2020). [doi.org/10.1063/5.0011662]

K. Shima, K. Furusawa, and S. F. Chichibu

[25] Impact of high-temperature implantation of Mg ions into GaN

Japanese Journal of Applied Physics 59, 056502-1-7 (2020). [doi.org/10.35848/1347-4065/ab8b3d]

M. Takahashi, A. Tanaka, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, K. Shima, K. Kojima, S. F.

Chichibu, and H. Amano

[26] Ammonothermal growth of 2-inch-long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave

Applied Physics Express 13, 055505-1-5 (2020). [doi.org/10.35848/1882-0786/ab8722]

D. Tomida, Q. Bao, M. Saito, R. Osanai, K. Shima, K. Kojima, T. Ishiguro, and S. F. Chichibu

[27] Suppression of green luminescence of Mg-ion-implanted GaN by subsequent implantation of fluorine ions at high temperature

M. Takahashi, A. Tanaka, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, K. Shima, K. Kojima, S. F.

Chichibu, K. J. Chen, and H. Amano

[28] Identification of film-forming species during SiC-CVD of CH3SiCl3/H2 by exploiting deep microtrenches ECS Journal of Solid State Science and Technology 8, P423-P429 (2019). [doi.org/10.1149/2.0191908jss]

K. Shima, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki

[29] Annealing behavior of vacancy-type defects in Mg- and H-implanted GaN studied using monoenergetic positron beams

A. Uedono, H. Iguchi, T. Narita, K. Kataoka, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Shima, K.

Kojima, S. F. Chichibu, and S. Ishibashi

[30] Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures

Japanese Journal of Applied Physics 58, SC0802-1-10 (2019). [doi.org/10.7567/1347-4065/ab0d06]

[Selected as 43rd JSAP Outstanding Paper Award 2021, JSAP Paper Award]

Uedono

[31] Room-temperature photoluminescence lifetime for the near-band-edge emission of (0001

_

) p-type GaN fabricated by sequential ion-implantation of Mg and H

K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu

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[32] Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S. Ishibashi, and A. Uedono

[33] Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels

Japanese Journal of Applied Physics 56, 06HE02-1-6 (2017). [doi.org/10.7567/JJAP.56.06HE02]

K. Shima, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki

[34] High-aspect-ratio parallel-plate microchannels applicable to kinetic analysis of chemical vapor deposition Advanced Materials Interfaces 3, 1600254-1-11 (2016). [doi.org/10.1002/admi.201600254]

[Selected as back cover]

K. Shima, Y. Funato, H. Sugiura, N. Sato, Y. Fukushima, T. Momose, and Y. Shimogaki

[35] Comparative study on Cu-CVD nucleation using β-diketonato and amidinato precursors for sub-10-nm-thick continuous film growth

ECS Journal of Solid State Science and Technology 4, P305-P313 (2015). [doi.org/10.1149/2.0061508jss]

[The Bruce Deal & Andy Grove Young Author Award 2015]

[36] Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-Interconnect

Journal of Materials Chemistry C 3, 2500-2510 (2015). [doi.org/10.1039/C4TC01088D]

H. Shimizu, K. Shima, Y. Suzuki, T. Momose, and Y. Shimogaki

[37] Study on the adhesion strength of CVD-Cu films with CVD/ALD-Co(W) underlayers made using amidinato precursors

ECS Journal of Solid State Science and Technology, 4, P20-P29 (2015). [doi.org/10.1149/2.0061502jss]

[38] Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography

K. Shima, Y. Tu, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki [39] Study on the adhesion strength of CVD-Cu films with CVD/ALD-Co(W) underlayers made using carbonyl

precursors

ECS Solid State Letters 3, P20-P22 (2014). [doi.org/10.1149/2.005402ssl]

[40] Self-assembled nano-stuffing structure in CVD and ALD Co(W) films as a single-layered barrier/liner for future Cu-interconnects

ECS Journal of Solid State Science and Technology 2, P471-P477 (2013). [doi.org/10.1149/2.029311jss]

H. Shimizu, A. Kumamoto, K. Shima, Y. Kobayashi, T. Momose, T. Nogami, and Y. Shimogaki

Proceedings

[1] Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N

Proc. 21^st International Workshop on Junction Technology (IWJT2023), pp.1-4, Kyoto/online hybrid, Japan, June (2023).

[doi.org/10.23919/IWJT59028.2023.10175182]

K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, A. Uedono, S. Ishibashi, and S. F. Chichibu

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[2] Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors Proc. 20^th International Workshop on Junction Technology (IWJT2021), pp.1-4, Online, June (2021).

[doi.org/10.23919/IWJT52818.2021.9609493]

S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono

[3] Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors

Proc. SPIE 11280, 112800B-1-10 (2020). [doi.org/10.1117/12.2545409]

[4] Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes

Proc. 19^th International Workshop on Junction Technology (IWJT2019), pp.1-4, Kyoto, Japan, June (2019).

[doi.org/10.23919/IWJT.2019.8802886]

[5] Characterization and Process Development of CVD/ALD-based Cu(Mn)/Co(W) Interconnect System Proc. 32^nd Annual Advanced Metallization Conference (AMC), pp.1-3, Austin, USA, September (2015).

[urn:nbn:de:bsz:ch1-qucosa-207279]

K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki [6] Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects

Proc. IEEE International Interconnect Technology Conference (IITC), pp.1-3, San Jose, USA, June (2012).

[doi.org/10.1109/IITC.2012.6251657]

H. Shimizu, H. Wojcik, K. Shima, Y. Kobayashi, T. Momose, J. W. Bartha, and Y. Shimogaki

Books

[1] 大口径・高純度GaN単結晶基板の量産法と結晶評価

次世代パワーエレクトロニクスの課題と評価技術, pp.60-67, ISBN 978-4-907002-93-0, S&T出版, 2022年7月刊行. [http://www.stbook.co.jp/products/detail.php?product_id=633]

栗本浩平, 包全喜, 三川豊, 嶋紘平, 石黒徹, 秩父重英

[2] 全方位フォトルミネセンス（ODPL）分光法を用いたGaN自立結晶の評価

次世代パワーエレクトロニクスの課題と評価技術, pp.119-126, ISBN 978-4-907002-93-0, S&T出版, 2022年7月刊行.

[http://www.stbook.co.jp/products/detail.php?product_id=633]

小島一信, 嶋紘平, 秩父重英

Invited presentations (as first author)

[1] Mgイオン注入GaNにおける空孔型欠陥のルミネッセンス評価

日本結晶成長学会ナノエピ分科会「第16回ナノ構造エピタキシャル成長講演会」, 高知県高知県立県民文化ホール, 2024年5月30日-6月1日（招待講演）

嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 井口紘子, 成田哲生, 片岡恵太, 石橋章司, 上殿明良, 秩父重英

[2] Mgイオン注入GaN中の空孔型欠陥がルミネッセンス特性に与える影響の評価

応用物理学会九州支部特別講演会, 九州大学/オンラインハイブリッド, 福岡県, 2023年11月12日（招待講演）

嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 井口紘子, 成田哲生, 片岡恵太, 石橋章司, 上殿明良, 秩父重英

[3] Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity (IWSingularity 2022) & The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022), Nagoya/online hybrid, Japan, January 11-13 (2022), S-I18 (Invited-oral).

K. Shima, K. Furusawa, and S. F. Chichibu

[4] CVD/ALDを用いたCu(Mn)/Co(W)配線システムの構築と３次元アトムプローブによるサブナノ構造・バリヤ性

評価

応用物理学会シリコンテクノロジー分科会多層配線システム研究委員会主催（電子情報通信学会シリコン材料・デバイス研究会(SDM)共催）配線技術研究集会, 9, 機械振興会館, 東京都, 2015年3月2日（招待講演）

嶋紘平, 涂远, 韓斌, 高見澤悠, 清水秀治, 清水康雄, 百瀬健, 井上耕治, 永井康介, 霜垣幸浩

Invited presentations (as co-author)

[1] Developments in highly efficient and long-life AlGaN-based UVC LEDs

7^th International Workshop on UV Materials and Devices (IWUMD-IV), Taipei, Taiwan, June 2-5 (2024) (Invited-oral).

Y. Saito, A. Miyazaki, S. Boyama, K. Okuno, M. Oya, K. Kataoka, T. Narita, K. Horibuchi, M. Kushimoto, Y. Honda, H.

Amano, H. Ishiguro, T. Takeuchi, K. Shima, and S. F. Chichibu

[2] 酸性アモノサーマル法の低圧化と大口径GaNバルク結晶作製技術の進展

日本結晶成長学会ナノエピ分科会「第16回ナノ構造エピタキシャル成長講演会」, 高知県高知県立県民文化ホール, 2024年5月30日-6月1日（チュートリアル講演）

石黒徹, 斉藤真, 包全喜, 栗本浩平, 冨田大輔, 嶋紘平, 秩父重英 [3] Technology development for long life and high efficiency DUV LEDs

The 10^th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'24), Yokohama, Japan, April 24-25 (2024), No.LEDIA1-03 (Invited-oral).

Y. Saito, A. Miyazaki, S. Boyama, K. Okuno, M. Oya, K. Kataoka, T. Narita, K. Horibuchi, M. Kushimoto, Y. Honda, H.

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Amano, H. Ishiguro, T. Takeuchi, K. Shima, and S. F. Chichibu

[4] Short-term degradation mechanisms of 275-nm-band AlGaN quantum well deep-ultraviolet light emitting diodes fabricated on a sapphire substrate

S. F. Chichibu, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi, and K. Shima

[5] Operation-induced short-term degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes on a sapphire substrate

The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2024, OPTO, Light-Emitting Devices, Materials, and Applications XXVIII (OE603), San Francisco, USA, January 27 - February 1 (2024), No. 12906-25 (Invited-oral).

S. F. Chichibu, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi, and K. Shima

[6] Low-pressure acidic ammonothermal (LPAAT) growth of large diameter nearly bowing-free GaN crystals The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2024, OPTO, Gallium Nitride Materials and Devices XIX (OE107), San Francisco, USA, January 27 - February 1 (2024), No. 12886-1 (Invited-oral).

S. F. Chichibu, K. Kurimoto, Q. Bao, Y. Mikawa, M. Saito, D. Tomida, T. Ishiguro, and K. Shima

[7] Operation-induced short-term degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes on a sapphire substrate

The 49^th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-49), New Mexico, USA, January 14-18 (2024), No.PCSI-ThM1-9 (Invited-oral&poster).

S. F. Chichibu, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi, and K. Shima [8] Recent developments for high efficiency for deep UV LEDs

The 14^th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, November 12-17 (2023), OD13-1 (Invited-oral).

Y. Saito, K. Nagata, A. Miyazaki, S. Boyama, K. Okuno, M. Oya, K. Kataoka, T. Narita, K. Horibuchi, M. Kushimoto, Y.

Honda, H. Amano, H. Ishiguro, T. Takeuchi, K. Shima, and S. F. Chichibu

[9] Impacts of vacancy clusters on the luminescence dynamics in Mg-implanted GaN on GaN structures

The 14^th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, November 12-17 (2023), CH6-1 (Invited-oral).

S. F. Chichibu, A. Uedono, H. Iguchi, T. Narita, K. Kataoka, M. Bockowski, J. Suda, T. Kachi, S. Takashima, R. Tanaka, K.

Ueno, M. Edo, S. Ishibashi, and K. Shima

[10] 空孔複合体が(Al,Ga)Nの発光特性に与える影響

日本結晶成長学会ナノ構造エピタキシャル成長分科会, 第15回ナノ構造エピタキシャル成長講演会, Fr-T1, 山

形テルサ, 2023年6月15-17日（チュートリアル講演）

秩父重英, 嶋紘平, 上殿明良

[11] Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures

The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2023, OPTO, Gallium Nitride Materials and Devices XVIII (OE107), San Francisco, USA, January 30 - February 2 (2023), No.12421-26 (Invited-oral).

S. F. Chichibu, K. Shima, H. Iguchi, T. Narita, K. Kataoka, H. Sakurai, M. Bockowski, J. Suda, T. Kachi, S. Takashima, R.

Tanaka, K. Ueno, M. Edo, S. Ishibashi, and A. Uedono

[12] Emission dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors

International Workshop on Nitride Semiconductors 2022 (IWN2022), Berlin, October 9-14 (2022), IT26 (Invited-oral).

S. F. Chichibu, K. Shima, K. Kikuchi, N. Umehara, K. Takiguchi, Y. Ishitani, and K. Hara

[13] Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures for power

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devices

Compound Semiconductor Week 2022, Ann Arbor, MI, June 1-3 (2022), Session: Power Elecronics I, No.5:00-5:30PM (Invited).

S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, R. Tanaka, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S.

Ishibashi, and A. Uedono

[14] Characterization of semiconductor crystals based on omnidirectional photoluminescence (ODPL) spectroscopy 241^st ECS Meeting, Vancouver, May 29 - June 2 (2022), H01-1301 (Invited).

K. Kojima, S. Ichikawa, O. Maida, K. Shima, and S. F. Chichibu

[15] エピタキシャル成長及びイオン注入により作製されたGaN基板上Mg添加 p型GaNの室温フォトルミネッセ

ンス寿命

第69回応用物理学会春季学術講演会, 23p-E302-1, 青山学院大学/オンラインハイブリッド, 2022年3月22-26 日（論文賞記念講演）

秩父重英, 嶋紘平, 小島一信, 高島信也, 上野勝典, 江戸雅晴, 井口紘子, 成田哲生, 片岡恵太, 石橋章司, 上殿明良

[16] Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors

Advances in III-Nitride Materials & Photonic Devices (IIIN-MPD), Org. by T. Wernicke, A. Haglund, M. Weyers, S.

Einfeldt, and M. Kneissl, Technical University of Berlin, Germany, March 9 (2022), Online webinar series (Invited lecturer).

S. F. Chichibu, K. Shima, S. Ishibashi, and A. Uedono

[17] 低圧酸性アモノサーマル法によるGaN単結晶製造技術の開発

日本学術振興会R032 産業イノベーションのための結晶成長委員会キックオフ研究会「ワイドギャップ半導体

II」, オンライン開催，2022年3月4日（依頼講演）

栗本浩平, 包全喜, 三川豊, 嶋紘平, 石黒徹, 秩父重英

[18] 全方位フォトルミネセンス(ODPL)法を用いた窒化ガリウム結晶の品質評価

応用物理学会先進パワー半導体分科会第21回研究会「ワイドバンドギャップ半導体の点欠陥の評価・制御・

デバイス応用」2021年11月17日, オンライン開催, 講演番号4（依頼講演）

小島一信, 嶋紘平, 秩父重英

[19] Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors

20^th International Workshop on Junction Technology (IWJT2021), Online, June 10-11 (2021), No.KN-4 (Plenary).

[20] 酸性アモノサーマル法による大口径高品質GaN結晶成長

ワイドギャップ半導体学会（WideG）第１回研究会「ＷＢＧ材料のバルク結晶成長とウェハ化技術」, オンライン開催, 2021年5月14日（招待講演）

三川豊, 石鍋隆幸, 鏡谷勇二, 包全喜, 栗本浩平, 嶋紘平, 小島一信, 石黒徹, 秩父重英

[21] 室温動作ポラリトンレーザの実現に向けたZnO微小共振器の形成

第4回固体レーザーの高速探索と機能開発に向けたレーザー材料研究会 -新しい機能を持ったレーザとそれに関連した材料- Smart Combinatorial Technology, Inc., オンライン開催，2021年3月22日（招待講演）

秩父重英, 嶋紘平, 小島一信, 古澤健太郎

[22] (Al,Ga,In)Nの輻射・非輻射再結合過程に点欠陥が及ぼす影響

日本学術振興会第162委員会第121回研究会「ワイドギャップ半導体の進展 ― 結晶成長, 物性評価からデバイスまで」, オンライン開催，2021年3月5日（招待講演）

秩父重英, 嶋紘平, 小島一信, 上殿明良, 石橋章司

[23] AlNおよび高AlNモル分率AlGaN混晶におけるAl空孔複合体の役割

第153回結晶工学分科会研究会「紫外材料・デバイス開発の最前線～結晶成長の理解とデバイス開発～」, オンライン開催, 2020年11月19日, No.4（招待講演）

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秩父重英, 嶋紘平, 小島一信, 三宅秀人, 上殿明良

[24] 陽電子消滅法によるMgイオン注入GaNの空孔型欠陥の焼鈍特性及び欠陥によるキャリア捕獲の研究

応用物理学会先進パワー半導体分科会, 第７回個別討論会「GaN p 型イオン注入」, オンライン開催, 2020年11 月16日（招待講演）

上殿明良, 高島信也, 江戸雅晴, 上野勝典, 松山秀昭, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, 嶋紘平, 小島一信, 秩父重英, 石橋章司

[25] 陽電子を用いた超高圧焼鈍によるイオン注入GaNの欠陥回復特性の研究

第49回結晶成長国内会議（JCCG-49）, シンポジウム「窒化物半導体における不純物制御」, オンライン開催, 2020 年11月9-11日, No.09p-A19（招待講演）

上殿明良, 櫻井秀樹, 成田哲生, Sierakowski Kacper, Bockowski Michal, 須田淳, 石橋章司, 嶋紘平, 秩父重英, 加地徹

[26] Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors

The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2020, OPTO, Gallium Nitride Materials and Devices XV (OE107), San Francisco, USA, February 1-6 (2020), No.11280-10 (Invited-oral).

[27] Impact of vacancy complexes on the nonradiative recombination processes in III-N devices

The 13^th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 7-12 (2019), No.PL02.02 (Plenary).

[28] Improvement in the luminescence property of hexagonal boron nitride grown by CVD on a c-plane sapphire substrate

The 4^th International Conference on Physics of 2D Crystals (ICP2C4), Hangzhou, China, June 10-15 (2019), No.

Technology of Thin Crystals 11:30 (Invited-oral).

K. Hara, N. Umehara, K. Shima, K. Kojima, and S. F. Chichibu

[29] 酸性アモノサーマル法による大口径GaNバルク結晶作製技術の展望

日本学術振興会先端ナノデバイス・材料テクノロジー第151委員会研究会, No.1, 東京工業大学, 2019年5月31 日（招待講演）

秩父重英, 斉藤真, 包全喜, 嶋紘平, 冨田大輔, 小島一信, 石黒徹 [30] Recent progress in acidic ammonothermal growth of GaN crystals

11^th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019), Nagoya Institute of Technology, Japan, March 17-21 (2019), No.18pF04I (Invited-oral).

S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K. Kojima, and T. Ishiguro

[31] 窒化物半導体特異構造の時間空間分解カソードルミネッセンス評価

第66回応用物理学会春季学術講演会, 9p-W541-3, 東京工業大学, 2019年3月9-12日（招待講演）

秩父重英, 嶋紘平, 小島一信

[32] エピタキシャル成長およびイオン注入Mg添加GaN中の非輻射再結合中心

応用物理学会シリコンテクノロジー分科会接合研究委員会研究会, No.216, pp.45-57, 大阪大学, 2019年2月28日

（招待講演）

[33] GaN パワー半導体のエピ成長・プロセスで生じる点欠陥の理解と制御

日本学術振興会結晶加工と評価技術145委員会パワーデバイス用シリコンおよび関連半導体に関する研究会（第 6回）, pp.81-87, 電力中央研究所, 2018年12月17日（招待講演）

成田哲生, 冨田一義, 徳田豊, 小木曽達也, 嶋紘平, 井口紘子, 片岡恵太, 小島一信, 秩父重英, 上殿明良, 堀田

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昌宏, 五十嵐信行, 加地徹

[34] 酸性アモノサーマル法による大口径GaNバルク結晶作製技術の展望

日本学術振興会結晶加工と評価技術145委員会パワーデバイス用シリコンおよび関連半導体に関する研究会（第 6回）, pp.151-172, 電力中央研究所, 2018年12月17日（招待講演）

秩父重英, 斉藤真, 包全喜, 冨田大輔, 嶋紘平, 小島一信, 石黒徹

[35] Recent progress of large size bulk GaN crystal growth by acidic ammonothermal method

International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11-16, (2018), Session Liquid Growth, No.GR4-1 (Invited-oral).

M. Saito, Q. Bao, K. Shima, D. Tomida, K. Kojima, T. Ishiguro, and S. F. Chichibu [36] Recent progress in acidic ammonothermal growth of GaN crystals

The 7^th International Symposium of Growth of III-Nitrides (ISGN-7), Warsaw, Poland, August 5-10 (2018), No.Tu1.1 (Invited-oral).

S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K. Kojima, and T. Ishiguro

[37] 酸性アモノサーマル法による大型GaN結晶成長への取り組み

2018年日本結晶成長学会特別講演会「パワーエレクトロニクス結晶の最前線」, No.5, 京都国立博物館, 2018年 7月18日（招待講演）

斉藤真, 包全喜, 嶋紘平, 冨田大輔, 小島一信, 石黒徹, 秩父重英

[38] 酸性アモノサーマル法によるGaNバルク結晶作製技術の進展

日本学術振興会結晶成長の科学と技術第161委員会2018年7月6日, 名古屋大学（招待講演）

斉藤真, 包全喜, 嶋紘平, 冨田大輔, 小島一信, 石黒徹, 秩父重英

[39] Mg添加GaNエピ層及びイオン注入層のフォトルミネッセンス評価

応用物理学会結晶工学分科会, 第149回結晶工学分科会研究会「GaN on GaNパワーデバイスにむけて～p型GaN の結晶工学～」, No.4, 名古屋大学, 2018年6月15日（招待講演）

[40] Mgイオン注入GaN層上におけるノーマリーオフMOSFET検討

応用物理学会結晶工学分科会, 第149回結晶工学分科会研究会「GaN on GaNパワーデバイスにむけて～p型GaN の結晶工学～」, No.5, 名古屋大学, 2018年6月15日（招待講演）

高島信也, 田中亮, 上野勝典, 松山秀昭, 江戸雅晴, 高橋言緒, 清水三聡, 石橋章司, 中川清和, 堀田昌宏, 須田淳, 嶋紘平, 小島一信, 秩父重英, 上殿明良

[41] Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate

The 3^rd International Conference on Physics of 2D Crystals (ICP2C3), La Valletta, Malta, May 29-June 2 (2018), No.

Characterization 11:30 (Invited-oral).

S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara

[42] P-type Conduction of Mg-ion Implanted N-polar GaN and the Optical Investigation

T. Narita, K. Kataoka, H. Iguchi, K. Shima, K. Kojima, S. F. Chichibu, M. Kanechika, T. Uesugi, and T. Kachi

[43] GaNの低転位密度化・高純度化と主要な非輻射再結合中心

応用物理学会先進パワー半導体分科会第3回個別討論会「GaN縦型パワーデバイスのドリフト層成長技術」, No.3, 名古屋大学, 2017年12月12日（招待講演）

秩父重英, 上殿明良, 嶋紘平, 小島一信, 石橋章司

[44] Consideration of Shockley-Read-Hall nonradiative recombination centers in wide bandgap (Al,Ga)N and ZnO Materials Research Society, 2017 Fall Meeting, Symposium EM4: Wide- and Ultra-Wide-Bandgap Materials and Devices,

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Boston, MA, USA, November 26 - December 1 (2017), No.EM04.04.06 (Invited-oral).

S. F. Chichibu, K. Kojima, K. Shima, A. Uedono, and S. Ishibashi

[45] 酸性鉱化剤を用いたアモノサーマル法による電子デバイス用GaN結晶合成の進展

第78回応用物理学会秋季学術講演会, 6p-A301-2 , 福岡国際会議場, 2017年9月5-8日（招待講演）

秩父重英, 斉藤真, 包全喜, 栗本浩平, 冨田大輔, 嶋紘平, 小島一信, 鏡谷勇二, 茅野林造, 石黒徹 [46] Fabrication of High-Quality and Reliability Cu interconnects by Chemical Processes

23^rd Asian Session of Advanced Metallization Conference (ADMETA^plus), Tokyo, Japan, October 7-10 (2013), 5-1 (Invited-oral).

Y. Shimogaki, H. Kim, H. Shimizu, K. Shima, and T. Momose

International conference presentations

[1] Roles of vacancy complexes on the luminescence spectra of Si-doped AlN layers grown by HVPE on (0001) AlN substrates prepared by PVT

7^th International Workshop on UV Materials and Devices (IWUMD-IV), Taipei, Taiwan, June 2-5 (2024) (Oral).

S. F. Chichibu, K. Kikuchi, B. Moody, S. Mita, R. Collazo, Z. Sitar, Y. Kumagai, S. Ishibashi, A. Uedono, and K. Shima [2] Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride grown on a highly oriented pyrolytic

graphite substrate

7^th International Workshop on UV Materials and Devices (IWUMD-IV), Taipei, Taiwan, June 2-5 (2024) (Oral).

K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, and S. F.

Chichibu

[3] Polishing and etching damages of hydrothermally grown ZnO single crystals studied using time-resolved photoluminescence spectroscopy

Materials Research Meeting 2023 (MRM2023), Kyoto, Japan, December 11-16 (2023), D1-O402-06 (Oral).

K. Shima, T. Kasuya, and S. F. Chichibu

[4] Effect on QWs Qualities of Thickness of Homoepitaxial AlN on AlN/sapphire Prepared by Sputtering and High-temperature Annealing

The 14^th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, November 12-17 (2023), CH9-2 (Oral).

R. Akaike, K. Uesugi, K. Shima, S. F. Chichibu, A. Uedono, and H. Miyake [5] Optical Characteristics of BGaN Films Using Oblique Polishing

The 14^th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, November 12-17 (2023), ThP-GR-16 (Poster).

R. Ozeki, D. Nakamura, R. Kudo, T. Ito, K. Shima, S. F. Chichibu, and T. Nakano

[6] Spatially resolved cathodoluminescence studies of graphitic BN segments formed in hexagonal BN epilayers grown on a (0001) sapphire by CVD

S. F. Chichibu, N. Umehara, K. Hara, and K. Shima

[7] Short-term degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light emitting diodes on a sapphire substrate

The 14^th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, November 12-17 (2023), OD13-3 (Oral).

S. F. Chichibu, K. Nagata, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi, and K. Shima

[8] Wafer-scale characterization of mosaics and the impact on point defects in GaN studied using 2D birefringence and photoluminescence measurements

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K. Shima and S. F. Chichibu

[9] Luminescence studies of Mg-implanted and undoped GaN-on-GaN structures processed by ultra-high-pressure annealing

K. Shima, T. Narita, K. Kataoka, S. Ishibashi, A. Uedono, M. Bockowski, J. Suda, T. Kachi, and S. F. Chichibu [10] Structural, electrical and optical properties of α-In2O3 grown by mist CVD on (0001)α-Al2O3 substrate

7^th International Conference on Advanced Electromaterials (ICAE2023), Jeju, Korea, October 31- November 3 (2023), No.

8-2510 (Oral).

T. Yamaguchi, A. Taguchi, K. Shima, T. Nagata, T. Yamamoto, Y. Hayakawa, M. Matsuda, T. Konno, T. Onuma, S. F.

Chichibu, and H. Honda

[11] Ultraviolet luminescence dynamics of hexagonal BN epilayers grown by chemical vapor deposition using carbon-free precursors

65^th Electronic Materials Conference, Santa Barbara, California, June 28-30 (2023), P07 (Oral).

T. Kasuya, K. Shima, K. Hara, and S. F. Chichibu

[12] Short-term degradation mechanisms of 275-nm-band AlGaN-based deepultraviolet light emitting diodes fabricated on a sapphire substrate

65^th Electronic Materials Conference, Santa Barbara, California, June 28-30 (2023), M01 (Oral).

S. F. Chichibu, K. Shima, T. Kasuya, K. Nagata, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, and T. Takeuchi [13] Luminescence studies of bulk GaN crystals grown by the low-pressure acidic ammonothermal method

65^th Electronic Materials Conference, Santa Barbara, California, June 28-30 (2023), X06 (Oral).

K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, T. Ishiguro, and S. F. Chichibu

[14] Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N

21^st International Workshop on Junction Technology (IWJT2023), Kyoto/online hybrid, Japan, June 8-9 (2023), S3-1 CNT (Oral).

K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, A. Uedono, S. Ishibashi, and S. F. Chichibu [15] Fabrication of BGaN neutron detectors and evaluation of the radiation detection characteristics

International Workshop on Nitride Semiconductors 2022 (IWN2022), Berlin, October 9-14 (2022), AT231 (Oral).

T. Nakano, Y. Ota, A. Miyazawa, H. Nakagawa, S. Kawasaki, Y. Ando, Y. Honda, H. Amano, K. Shima, S. F. Chichibu, Y.

Inoue, T. Aoki

[16] Near-band-edge recombination in monolayer hBN epitaxial films studied using cathodoluminescence spectroscopy International Workshop on Nitride Semiconductors 2022 (IWN2022), Berlin, October 9-14 (2022), AT232 (Oral).

K. Shima, C. Elias, T. S. Cheng, C. J. Mellor, P. H. Beton, S. V. Novikov, B. Gil, G. Cassabois, and S. F. Chichibu [17] Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Kojima, A. Uedono, S. Ishibashi, and S. F. Chichibu [18] Low-pressure acidic ammonothermal (LPAAT) growth of 2-inch-diameter bulk GaN crystals

K. Kurimoto, Q. Bao, Y. Mikawa, K. Shima, T. Ishiguro, S. F. Chichibu

[19] Self-formed compositional superlattices in m-plane Al0.7In0.3N alloys on a GaN substrate triggered by atomic ordering of In and Al along the c-axis

International Workshop on Nitride Semiconductors 2022 (IWN2022), Berlin, October 9-14 (2022), PP170 (Poster).

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[20] Observation of room-temperature cavity-polaritons in ZnO microcavities fabricated by a top-down process 2022 Spring Meeting of the European Materials Research Society (E-MRS),Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, Online, May 30-June 3 (2022), No.N.15.5 (Oral).

K. Shima, K. Furusawa, S. F. Chichibu

[21] Luminescence studies of nearly lattice-matched c-plane AlInN/GaN heterostructures

5^th International Workshop on UV Materials and Devices (IWUMD-V), Jeju, Korea/online hybrid, May 23-26 (2022), No.

ThB4-2 (Oral).

L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. F. Chichibu

[22] Reduction of polishing-induced surface recombination centers of ZnO single crystals grown by the hydrothermal method

5^th International Workshop on UV Materials and Devices (IWUMD-V), Jeju, Korea/online hybrid, May 23-26 (2022), No.

ThB4-4 (Oral).

T. Kasuya, K. Shima, and S. F. Chichibu

[23] Impact of growth pressure on the neutron-detection efficiency of BGaN diodes

IEEE Nuclear Science Symposium (NSS) and Medical Imaging Conference (MIC), online, October 16-23, (2021), R-08-07 (Oral).

A. Miyazawa, Y. Ohta, S. Matsukawa, K. Hayashi, H. Nakagawa, S. Kawasaki, Y. Ando, G. Wakabayashi, Y. Honda, H.

Amano, K. Shima, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki, T. Nakano

[24] Cathodoluminescence studies of AlN epilayers grown by MOVPE on sputtered AlN templates annealed at high temperature

The 8^th Asian Conference on Crystal Growth and Crystal Technology (CGCT2021), online, March 1-4, (2021), C10-10-57 (Oral).

T. Kasuya, K. Shima, K. Shojiki, K. Uesugi, K. Kojima, A. Uedono, H. Miyake, and S. F. Chichibu

[25] Macroscopically homogeneous cathodoluminescence mapping images of c-plane nearly lattice-matched Al1-xInxN films on a GaN substrate

L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, T. Takeuchi, M. Miyoshi, and S. F. Chichibu

[26] Striped and fin-shaped cation orderings and self-formed compositional superlattices in an m-plane Al0.7In0.3N on GaN heterostructure

[27] Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN

Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity, online, February 1-3, (2021) Wed-1 (Oral).

[28] Characterization of planar ZnO microcavities for the near ultraviolet polariton laser operatable at room temperature

Materials Research Meeting 2019 (MRM2019), Yokohama, Japan, December 10-14 (2019), H3-11-O03 (Oral).

K. Shima, K. Furusawa, K. Kojima, and S. F. Chichibu

[29] Improvement of neutron detection efficiency for BGaN semiconductor detectors

2019 IEEE Nuclear Science Symposium and Medical Imaging Conference, and Workshop on Room-Temperature

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Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD), the Manchester Convention Centre, Manchester, UK, October 26 – November 2 (2019), No.R-04-450 (Poster).

T. Nakano, Y. Takahashi, Y. Ohta, N. Yamada, H. Nakagawa, Y. Honda, H. Amano, K. Shima, K. Kojima, S. F. Chichibu, Y.

Inoue, and T. Aoki

[30] Inhibition of explosive by-products generation during CVD from Cl-containing silane precursors in reactor exhaust system

18^th Asian Pacific Confederation of Chemical Engineering Congress (APCChE 2019), Sapporo, Japan, September 23-27 (2019), G306 (Oral).

N. Sato, Y. Fukushima, Y. Funato, K. Shima, T. Momose, M. Koshi, Y. Shimogaki

[31] Fabrication of planar ZnO microcavities for near ultraviolet polariton laser operating at room temperature 4^th International Workshop on UV Materials and Devices (IWUMD-IV), St. Petersburg, Russia, September 8-13 (2019), No.We-12o (Oral).

K. Shima, K. Furusawa, K. Kojima, and S. F. Chichibu

[32] Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN

The 13^th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 7-12 (2019), No.BP01.30 (Poster). [Best Poster Award]

S. Takashima, R. Tanaka, K. Ueno, H. Matsuyama, Y. Fukushima, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, and A.

Uedono

[33] Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes

The 13^th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 7-12 (2019), No.E01.04 (Oral).

K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu

[34] Time-resolved luminescence studies of indirect excitons in h-BN epitaxial films grown by chemical vapor deposition using carbon-free precursors

The 13^th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 7-12 (2019), No.A10.06 (Oral).

S. F. Chichibu, N. Umehara, K. Takiguchi, K. Shima, K. Kojima, Y. Ishitani, and K. Hara

[35] Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes

19^th International Workshop on Junction Technology (IWJT2019), Kyoto, Japan, June 6-7 (2019), No.S5-2 (Oral). [Best Paper Award]

[36] Comparative study on Cu-CVD nucleation using β-diketonato and amidinato precursors for sub-10-nm-thick continuous film formation

2^nd Nucleation and Growth Research Conference (NGRC2019), Kyoto, Japan, June 10-13 (2019), OP-17 (Oral).

[37] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate

Materials Research Society, 2018 Fall Meeting, Symposium EP08:Ultra-Wide-Bandgap Materials and Devices, Boston, MA, USA, November 25-30 (2018), No.EP08.09.07 (Oral).

S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara [38] Recent progress of acidic ammonothermal growth of GaN

4^th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4), Sendai, Japan, November 18-20 (2018), GR-II-3 (Oral).

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S. F. Chichibu, M. Saito, Q. Bao, K. Shima, D. Tomida, K. Kojima, and T. Ishiguro

[39] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures

International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11-16, (2018), Session Carrier and Phonon Dynamics in GaN, No.CR6-6 (Oral).

Uedono

[40] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate

International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11-16, (2018), Session BN, No.J6-3 (Oral).

S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara

[41] A comparative study on SiO2/ZrO2 and SiO2/HfO2 distributed Bragg reflectors for ZnO-based microcavities The 10th International Workshop on Zinc Oxide and Other Oxide Semiconductors (IWZnO2018), Warsaw, Poland, September 11-14 (2018), No.ThO_7.6 (Oral).

K. Shima, T. Kasuya, K. Furusawa, K. Kojima, and S. F. Chichibu

[42] Fabrication of a ZnO-based microcavity using the reactive helicon-wave-excited-plasma sputtering method The 10th International Workshop on Zinc Oxide and Other Oxide Semiconductors (IWZnO2018), Warsaw, Poland, September 11-14 (2018), No.ThO_7.3 (Oral).

T. Kasuya, K. Shima, K. Kojima, K. Furusawa, and S. F. Chichibu

[43] Reformation of analytical method for surface reaction kinetics on CVD based on the Microcavity method Joint EuroCVD 21 - Baltic ALD 15 Conference, Linkoping, Sweden, June 11-14 (2017), 29209 (Oral).

Y. Funato, N. Sato, K. Shima, T. Naka, Y. Fukushima, T. Momose, and Y. Shimogaki

[44] Surface reaction modeling of SiC-CVI revealed using deep microchannels and process development for highly conformal deposition using novel sacrificial layer

Joint EuroCVD 21 - Baltic ALD 15 Conference, Linkoping, Sweden, June 11-14 (2017), 29239 (Oral).

K. Shima, N. Sato, Y. Funato, T. Naka, Y. Fukushima, T. Momose, and Y. Shimogaki

[45] Tailoring high-aspect-ratio three-dimensional test structures for process development of conformal-film deposition technologies

38^th International Symposium on Dry Process (DPS2016), Sapporo, Japan, November 21-22 (2016), E-1 (Oral).

K. Shima, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki [46] Co thin film fabrication using hot-wire assisted atomic layer deposition

26^th Asian Session of Advanced Metallization Conference (ADMETA^plus), Tokyo, Japan, October 20-21 (2016), LN-4 (Oral).

T. Naka, K. Shima, T. Momose, and Y. Shimogaki

[47] Preparation of High-Quality Metallic Films by Hot-Wire Assisted Atomic Layer Deposition PRiME 2016/230^th ECS Meeting, Honolulu, USA, October 2-7 (2016), 1878 (Oral).

Y. Shimogaki, K. Shima, G. Yuan, T. Momose, and H. Shimizu

[48] Characterization and Process Development of CVD/ALD-based Cu(Mn)/Co(W) Interconnect System 32^nd Annual Advanced Metallization Conference (AMC), Austin, USA, September 9-10 (2015), 2-4 (Oral).

K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki [49] Gas phase and surface reaction simulation on chemical vapor infiltration of silicon carbide

20^th Biennial European Conference on Chemical Vapor Deposition, Sempach, Switzerland, July 13-17 (2015), 4-5 (Oral).

N. Sato, Y. Funato, K. Shima, Y. Fukushima, T. Momose, M. Koshi, and Y. Shimogaki

[50] Kinetic study on chemical vapor infiltration of silicon carbide using high-aspect-ratio features

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20^th Biennial European Conference on Chemical Vapor Deposition, Sempach, Switzerland, July 13-17 (2015) , P1.8 (Poster).

K. Shima, N. Sato, Y. Funato, H. Sugiura, Y. Fukushima, T. Momose, and Y. Shimogaki

[51] Construction of overall reaction model of silicon carbide chemical vapor infiltration for process design 20^th Biennial European Conference on Chemical Vapor Deposition, Sempach, Switzerland, July 13-17 (2015) , P1.7 (Poster).

Y. Funato, N. Sato, K. Shima, H. Sugiura, Y. Fukushima, T. Momose, and Y. Shimogaki [52] Multi-scale analysis of chemical vapor deposition for SiC from organosilane precursors

20^th Biennial European Conference on Chemical Vapor Deposition, Sempach, Switzerland, July 13-17 (2015), P1.6 (Poster).

H. Sugiura, N. Sato, Y. Funato, K. Shima, Y. Fukushima, T. Momose, and Y. Shimogaki

[53] Sub-nanoscale Structure and Barrier Performance of Cu(Mn)/Co(W) System for ULSI Cu Interconnects Examined by Atom Probe Tomography

1^st Belux workshop on Coating, Materials, Surface and Interface, Belvaux, Luxembourg, September 11-12 (2014) (Oral).

K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki [54] Kinetics of Chemical Vapor Infiltration Using MTS/H2 for SiC Film Coating Revealed by Multi-Scale Analysis

1^st Belux workshop on Coating, Materials, Surface and Interface, Belvaux, Luxembourg, September 11-12 (2014) (Poster).

K. Shima, N. Sato, Y. Funato, H. Sugiura, Y. Fukushima, T. Momose, and Y. Shimogaki [55] Chemical Vapor Deposition Process for SiC Film using Tetramethylsilane/H2 system

1^st Belux workshop on Coating, Materials, Surface and Interface, Belvaux, Luxembourg, September 11-12 (2014) (Poster).

H. Sugiura, Y. Fukushima, K. Shima, N. Sato, Y. Funato, T. Momose, and Y. Shimogaki

[56] Observation of Grain-Boundary Stuffing and Barrier Performance in CVD-Cu(Mn)/ALD-Co(W) System by Atom Probe Tomography

Materials for Advanced Metallization (MAM) 2014, Chemnitz, Germany, March 2-5 (2014), O2-02 (Oral).

K. Shima, Y. Tu, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki

[57] Adhesion Strength of CVD-Cu with CVD or ALD-Co(W) for A Single Film Working as Cu Diffusion Barrier and Adhesion Layer in Future ULSI Interconnects

Materials for Advanced Metallization (MAM) 2013, Leuven, Belgium, March 10-13 (2013), P4-17 (Poster).

[58] Process Design for Co(W) Alloy Films as a Single Layered Barrier/Liner Layer for 14 nm Generation Cu-interconnect

22^nd Asian Session of Advanced Metallization Conference (ADMETA^plus), Tokyo, Japan, October 23-25 (2012), 5-3 (Oral).

H. Shimizu, A. Kumamoto, Y. Suzuki, K. Shima, T. Momose, and Y. Shimogaki

[59] Adhesion and Nucleation Property of CVD-Cu with ALD-Co(W) Film as Cu Diffusion Barrier and Adhesion Promoting Layer in Future ULSI Interconnects

22^nd Asian Session of Advanced Metallization Conference (ADMETA^plus), Tokyo, Japan, October 23-25 (2012), 5-2 (Oral).

[60] Process Design for Co(W) Alloy Films as a Single Layered Barrier/Liner Layer for 14 nm Generation Cu-interconnect

29^th Annual Advanced Metallization Conference (AMC), Albany, USA, October 9-11 (2012), 10-1 (Oral).

H. Shimizu, A. Kumamoto, K. Shima, Y. Suzuki, T. Momose, and Y. Shimogaki

[61] Adhesion and Nucleation Property of CVD-Cu with ALD-Co(W) Film as Cu Diffusion Barrier and Adhesion Promoting Layer in Future ULSI Interconnects

29^th Annual Advanced Metallization Conference (AMC), Albany, USA, October 9-11 (2012), 4-3 (Oral).

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[62] High Density Nucleation to Realize Ultra Thin and Continuous CVD-Cu Film Using Ruthenium Glue Layer Applied to Highly Reliable ULSIs

International Union of Materials Research Societies-International Conference on Electronic Materials 2012, Yokohama, Japan, September 23-28 (2012), B-1-O27-002 (Oral).

[63] Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects IEEE International Interconnect Technology Conference (IITC), San Jose, USA, June 4-6 (2012), 1-3 (Oral).

H. Shimizu, H. Wojcik, K. Shima, Y. Kobayashi, T. Momose, J. W. Bartha, and Y. Shimogaki

Presentations at workshops and seminars

[1] フォトルミネッセンス法によるZnOのプロセス誘起欠陥の評価

第23回東北大学多元物質科学研究所研究発表会, A4-01, 東北大学, 2023年12月7-8日（ポスター）

Leiyu Wu, 嶋紘平, 秩父重英

[2] 化学反応を用いるものづくり－殺菌・消毒を行う深紫外線LED－

宮城県味噌醤油工業協同組合, 本場仙台味噌醤油鑑評会表彰式・70周年記念式典, ホテル白萩, 仙台, 2023年10 月20日（招待講演）

嶋紘平

[3] 可視光透過型デバイス実現に向けたp型NiOエピタキシャル薄膜の電気特性

第22回東北大学多元物質科学研究所研究発表会, B5-03, 東北大学・オンライン併用開催, 2022年12月8-9日（ポスター）

橋本侑弥, 杉山睦, 嶋紘平, 秩父重英

[4] 空孔ガイドMg再分配法によるp型イオン注入GaNの少数キャリア寿命の改善

第22回東北大学多元物質科学研究所研究発表会, B4-03, 東北大学・オンライン併用開催, 20

Kohei Shima（嶋 紘平） - 東北大学 多元物質科学研究所