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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

(2)

Quad 2-Input NOR Gate

The MC74VHC02 is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems.

Features

• High Speed: t PD = 3.6 ns (Typ) at V CC = 5.0 V

• Low Power Dissipation: I CC = 2 m A (Max) at T A = 25 ° C

• High Noise Immunity: V _NIH = V _NIL = 28% V _CC

• Power Down Protection Provided on Inputs

• Balanced Propagation Delays

• Designed for 2.0 V to 5.5 V Operating Range

• Low Noise: V _OLP = 0.8 V (Max)

• Pin and Function Compatible with Other Standard Logic Families

• Latchup Performance Exceeds 300mA

• ESD Performance:

Human Body Model > 2000 V;

Machine Model > 200 V

• Chip Complexity: 40 FETs or 10 Equivalent Gates

• NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Figure 1. LOGIC DIAGRAM 1 Y1 A1 2

B1 3

Y4 Y = A + B 4 Y2 A2 5

B2 6

10 Y3 A3 8

B3 9

13 A4 11

B4 12

TSSOP−14 DT SUFFIX CASE 948G www.onsemi.com

1 VHC02G AWLYWW 1

14 SOIC−14 D SUFFIX CASE 751A

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

ORDERING INFORMATION MARKING DIAGRAMS

1 VHC 02 ALYW

1 14

A = Assembly Location WL, L = Wafer Lot

Y = Year

WW, W = Work Week G or = Pb−Free Package (Note: Microdot may be in either location)

FUNCTION TABLE

A L L H H

Inputs Output B

L H L H

Y H L L L 11 12 13 14

8 9 10 5

4 3 2 1

7 6

Y3 A4 B4 Y4 V

_CC

A3 B3 Y2

B1 A1 Y1

GND B2 A2

PIN ASSIGNMENT

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www.onsemi.com 2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Parameter

ÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎ

V

_CC

DC Supply Voltage

ÎÎÎÎÎ

– 0.5 to + 7.0

ÎÎÎ

V

ÎÎÎÎ

V

_in

DC Input Voltage

ÎÎÎÎÎ

– 0.5 to + 7.0

ÎÎÎ

V

ÎÎÎÎ

V

_out

DC Output Voltage

ÎÎÎÎÎ

– 0.5 to V

_CC

+ 0.5

ÎÎÎ

V

ÎÎÎÎ

I

_IK

Input Diode Current

ÎÎÎÎÎ

− 20

ÎÎÎ

mA

ÎÎÎÎ

I

_OK

Output Diode Current

ÎÎÎÎÎ

± 20

ÎÎÎ

mA

ÎÎÎÎ

I

_out

DC Output Current, per Pin

ÎÎÎÎÎ

± 25

ÎÎÎ

mA

ÎÎÎÎ

I

_CC

DC Supply Current, V

_CC

and GND Pins

ÎÎÎÎÎ

± 50

ÎÎÎ

mA

ÎÎÎÎ

P

_D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Power Dissipation in Still Air, SOIC Packages†

TSSOP Package†

ÎÎÎÎÎ

500 450

ÎÎÎ

mW

ÎÎÎÎ

T

_stg ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Temperature

ÎÎÎÎÎ

– 65 to + 150

ÎÎÎ ÎÎÎ

C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

†Derating — SOIC Packages: – 7 mW/ C from 65 to 125 C TSSOP Package: − 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ

Symbol

Parameter

ÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎ

V

_CC

DC Supply Voltage

ÎÎÎ

2.0

ÎÎÎ

5.5

ÎÎÎ

V

ÎÎÎÎ

V

_in

DC Input Voltage

ÎÎÎ

0

ÎÎÎ

5.5

ÎÎÎ

V

ÎÎÎÎ

V

_out

DC Output Voltage

ÎÎÎ

0

ÎÎÎ

V

_CC

ÎÎÎ

V

ÎÎÎÎ

T

_A

Operating Temperature

ÎÎÎ

− 40

ÎÎÎ

+ 85

ÎÎÎ

C

ÎÎÎÎ

t

_r

, t

_f

Input Rise and Fall Time V

_CC

= 3.3V ± 0.3V V

_CC

=5.0V ± 0.5V

ÎÎÎ

0 0

ÎÎÎ

100 20

ÎÎÎ

ns/V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC ELECTRICAL CHARACTERISTICS

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Parameter

ÎÎÎÎÎÎÎ

Test Conditions

ÎÎÎ

V

_CC

V

ÎÎÎÎÎÎÎÎ

T

_A

= 25 ° C

^{ÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎ

T

_A

= − 40 to 85 ° C

^ÎÎ

ÎÎ

Unit

ÎÎÎÎ

Min

^ÎÎÎ

ÎÎÎ

Typ

^ÎÎÎ

ÎÎÎ

Max

^ÎÎÎÎ

ÎÎÎÎ

Min

^ÎÎÎÎ

ÎÎÎÎ

Max

ÎÎÎÎ

V

_IH ^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

Minimum High−Level Input Voltage

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ ÎÎÎ

ÎÎÎ

2.0 3.0 to

5.5

ÎÎÎÎ

1.50 V

_CC

x 0.7

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎÎ

1.50 V

_CC

x 0.7

ÎÎÎÎ

ÎÎÎÎ ÎÎ

ÎÎ

V

ÎÎÎÎ

V

_IL ^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

Maximum Low−Level Input Voltage

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ ÎÎÎ

ÎÎÎ

2.0 3.0 to

5.5

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

0.50 V

_CC

x 0.3

ÎÎÎÎ

0.50 V

_CC

x 0.3

ÎÎ

V

ÎÎÎÎ

V

_OH

ÎÎÎÎÎÎÎÎ

Minimum High−Level Output Voltage

ÎÎÎÎÎÎÎ

V

_in

= V

_IH

or V

_IL

I

_OH

= − 50 m A

ÎÎÎ

2.0 3.0 4.5

ÎÎÎÎ

1.9 2.9 4.4

ÎÎÎ

2.0 3.0 4.5

ÎÎÎ

ÎÎÎÎ

1.9 2.9 4.4

ÎÎÎÎ

ÎÎÎÎ ÎÎ

ÎÎ

V

ÎÎÎÎÎÎÎ

V

_in

= V

_IH

or V

_IL

I

_OH

= − 4mA I

_OH

= − 8mA

ÎÎÎ

3.0 4.5

ÎÎÎÎ

2.58 3.94

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎÎ

2.48 3.80

ÎÎÎÎ

ÎÎÎÎ ÎÎÎÎ

ÎÎÎÎ

V

_OL ^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

Maximum Low−Level Output Voltage

ÎÎÎÎÎÎÎ

V

_in

= V

_IH

or V

_IL

I

_OL

= 50 m A

ÎÎÎ

2.0 3.0 4.5

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

0.0 0.0 0.0

ÎÎÎ

0.1 0.1 0.1

ÎÎÎÎ

0.1 0.1 0.1

ÎÎ

V

ÎÎÎÎÎÎÎ

V

_in

= V

_IH

or V

_IL

I

_OL

= 4mA I

_OL

= 8mA

ÎÎÎ

3.0 4.5

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

0.36 0.36

ÎÎÎÎ

0.44 0.44

ÎÎÎÎ

I

_in

ÎÎÎÎÎÎÎÎ

Maximum Input Leakage Current

ÎÎÎÎÎÎÎ

V

_in

= 5.5 V or GND

ÎÎÎ

0 to 5.5

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

± 0.1

ÎÎÎÎ

± 1.0

ÎÎ

m A

ÎÎÎÎ

I

_CC ^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

Maximum Quiescent Supply Current

ÎÎÎÎÎÎÎ

V

_in

= V

_CC

or GND

^ÎÎÎ

ÎÎÎ

5.5

^ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

2.0

^ÎÎÎÎ

ÎÎÎÎ

20.0

^ÎÎ

ÎÎ

m A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance cir- cuit. For proper operation, V

_in

and V

_out

should be constrained to the range GND v (V

_in

or V

_out

) v V

_CC

.

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V

_CC

).

Unused outputs must be left open.

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

AC ELECTRICAL CHARACTERISTICS (Input t

_r

= t

_f

= 3.0ns)

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎ

Parameter

ÎÎÎÎÎÎÎÎÎ

Test Conditions

ÎÎÎÎÎÎÎÎ

T

_A

= 25 ° C

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

T

_A

= − 40 to 85 ° C

^ÎÎ

ÎÎ

Unit

ÎÎÎ

Min

^ÎÎÎ

ÎÎÎ

Typ

^ÎÎÎÎ

ÎÎÎÎ

Max

^ÎÎÎ

ÎÎÎ

Min

^ÎÎÎÎ

ÎÎÎÎ

Max

ÎÎÎÎ

t

_PLH

, t

_PHL

ÎÎÎÎÎÎÎÎÎ

Maximum Propagation Delay, Input A or B to Output Y

ÎÎÎÎÎÎÎÎÎ

V

_CC

= 3.3 ± 0.3V C

_L

= 15pF C

_L

= 50pF

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

5.6 8.1

ÎÎÎÎ

7.9 11.4

ÎÎÎ

1.0 1.0

ÎÎÎÎ

9.5 13.0

ÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

V

_CC

= 5.0 ± 0.5V C

_L

= 15pF C

_L

= 50pF

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

3.6 5.1

ÎÎÎÎ

5.5 7.5

ÎÎÎ

1.0 1.0

ÎÎÎÎ

6.5 8.5

ÎÎÎÎ

C

_in ^{ÎÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎÎ

Maximum Input Capacitance

^{ÎÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎÎ ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

4

^ÎÎÎÎ

ÎÎÎÎ

10

^ÎÎÎ

ÎÎÎ

ÎÎÎÎ

10

^ÎÎ

ÎÎ

pF

C

_PD

Power Dissipation Capacitance (Note 1)

Typical @ 25 ° C, V

_CC

= 5.0V 15 pF

1. C

_PD

is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: I

_CC(OPR)

= C

_PD

V

_CC

f

_in

+ I

_CC

/ 4 (per gate). C

_PD

is used to determine the no−load dynamic power consumption; P

_D

= C

_PD

V

_CC²

f

_in

+ I

_CC

V

_CC

.

NOISE CHARACTERISTICS (Input t

_r

= t

_f

= 3.0ns, C

_L

= 50pF, V

_CC

= 5.0V)

Symbol Characteristic

T

_A

= 25 ° C Typ Max Unit

V

_OLP

Quiet Output Maximum Dynamic V

_OL

0.3 0.8 V

V

_OLV

Quiet Output Minimum Dynamic V

_OL

− 0.3 − 0.8 V

V

_IHD

Minimum High Level Dynamic Input Voltage 3.5 V

V

_ILD

Maximum Low Level Dynamic Input Voltage 1.5 V

Figure 2. Switching Waveforms V

_CC

GND 50%

50% V

_CC

A or B

Y

t

_PHL

t

_PLH

*Includes all probe and jig capacitance Figure 3. Test Circuit

C

_L

* TEST POINT

DEVICE UNDER TEST

OUTPUT

Figure 4. Input Equivalent Circuit INPUT

ORDERING INFORMATION

Device Package Shipping

^†

MC74VHC02DR2G SOIC−14

(Pb−Free) 2500 / Tape & Reel

MC74VHC02DTR2G TSSOP−14

(Pb−Free) 2500 / Tape & Reel

NLV74VHC02DTR2G*

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP

Capable.

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PACKAGE DIMENSIONS

SOIC−14 CASE 751A−03

ISSUE K

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS.

5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

H

14 8

7 1

0.25

M

B

^M

C

h

X 45

SEATING PLANE

A1 A

M A

S

0.25

M

C B

^S

b

13X

B A

E D

e

DETAIL A

L A3

DETAIL A

DIM MIN MAX MIN MAX

INCHES MILLIMETERS

D 8.55 8.75 0.337 0.344 E 3.80 4.00 0.150 0.157 A 1.35 1.75 0.054 0.068

b 0.35 0.49 0.014 0.019

L 0.40 1.25 0.016 0.049

e 1.27 BSC 0.050 BSC

A3 0.19 0.25 0.008 0.010 A1 0.10 0.25 0.004 0.010

M 0 7 0 7

H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.019

6.50

14X

0.58

14X

1.18

1.27

DIMENSIONS: MILLIMETERS

1 PITCH SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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PACKAGE DIMENSIONS

TSSOP−14 CASE 948G

ISSUE B

DIM MIN MAX MIN MAX INCHES MILLIMETERS

A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C −−− 1.20 −−− 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024 J 0.09 0.20 0.004 0.008 J1 0.09 0.16 0.004 0.006 K 0.19 0.30 0.007 0.012 K1 0.19 0.25 0.007 0.010 L 6.40 BSC 0.252 BSC M 0 8 0 8 NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.

MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.

4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.

INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.

5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.

7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−.

U

S

0.15 (0.006) T

2X

L/2

U

S

0.10 (0.004)

M

T V

^S

L −U−

SEATING PLANE

0.10 (0.004)

−T−

ÇÇÇ

SECTION N−N

DETAIL E J J1

K K1

ÉÉÉ

DETAIL E F

M

−W−

0.25 (0.010)

8 14

1 7 PIN 1 IDENT.

G H A

D C

B U

S

0.15 (0.006) T

−V−

14X REF

K

N N

7.06

14X

0.36

^14X

1.26

0.65

DIMENSIONS: MILLIMETERS

1 PITCH SOLDERING FOOTPRINT

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910 Japan Customer Focus Center

Phone: 81−3−5817−1050 LITERATURE FULFILLMENT:

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

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ON Semiconductor Is Now

To learn more about onsemi™, please visit our website at www.onsemi.com