NGTG15N120FL2WG IGBT - Field Stop II

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications.

Features

• Extremely Efficient Trench with Field Stop Technology

• ^T

= 175 ° C

• Optimized for High Speed Switching

• ¹⁰ m s Short Circuit Capability

• These are Pb−Free Devices

• Solar Inverter

• Uninterruptible Power Inverter Supplies (UPS)

• ^Welding

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage VCES 1200 V

Collector current

@ TC = 25°C

@ TC = 100°C

I_C

30 15

A

Pulsed collector current, T_pulse limited by T_Jmax

ICM 60 A

Gate−emitter voltage Transient gate−emitter voltage (T_pulse = 5 ms, D < 0.10)

VGE $20

±30

V

Power Dissipation

@ TC = 25°C

@ TC = 100°C

PD

294 147

W

Short Circuit Withstand Time V_GE = 15 V, V_CE = 500 V, T_J≤ 150°C

T_SC 10 ms

Operating junction temperature range

T_J −55 to +175 °C Storage temperature range T_stg −55 to +175 °C Lead temperature for soldering, 1/8”

from case for 5 seconds

T_SLD 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO−247 CASE 340AL C

G

15 A, 1200 V V

= 2.0 V E

= 0.37 mJ

E

Device Package Shipping ORDERING INFORMATION

NGTG15N120FL2WG TO−247 (Pb−Free)

30 Units / Rail http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

G15N120FL2 AYWWG G

E C

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal resistance junction−to−case, for IGBT R_qJC 0.51 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited

V_GE = 0 V, I_C = 500 mA V_(BR)CES 1200 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 15 A V_GE = 15 V, I_C = 15 A, T_J = 175°C

V_CEsat −

−

2.00 2.40

2.40

−

V Gate−emitter threshold voltage V_GE = V_CE, I_C = 400 mA V_GE(th) 4.5 5.65 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited

V_GE = 0 V, V_CE = 1200 V V_GE = 0 V, V_CE = 1200 V, T_{J =} 175°C

I_CES −

−

−

−

0.4 4.0

mA Gate leakage current, collector−emitter

short−circuited

V_GE = 20 V , V_CE = 0 V I_GES − − 200 nA

Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 2640 − pF

Output capacitance C_oes − 88 −

Reverse transfer capacitance C_res − 50 −

Gate charge total

V_CE = 600 V, I_C = 15 A, V_GE = 15 V

Q_g − 109 − nC

Gate to emitter charge Q_ge − 23 −

Gate to collector charge Q_gc − 51 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time

T_J = 25°C V_CC = 600 V, I_C = 15 A

R_g = 10 W V_GE = 0 V/ 15 V*

t_d(on) − 64 − ns

Rise time t_r − 104 −

Turn−off delay time t_d(off) − 128 −

Fall time t_f − 173 −

Turn−on switching loss E_on − 1.20 − mJ

Turn−off switching loss E_off − 0.37 −

Total switching loss E_ts − 1.57 −

Turn−on delay time

T_J = 150°C V_CC = 600 V, I_C = 15 A

R_g = 10 W V_GE = 0 V/ 15 V*

t_d(on) − 62 − ns

Rise time t_r − 126 −

Turn−off delay time t_d(off) − 134 −

Fall time t_f − 262 −

Turn−on switching loss E_on − 1.45 − mJ

Turn−off switching loss E_off − 0.76 −

Total switching loss E_ts − 2.21 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

*Includes diode reverse recovery loss using NGTB15N120FL2WG.

TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

8 6

5 4 3 2 1 0

Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_GE, GATE−EMITTER VOLTAGE (V)

8 0

Figure 5. V_CE(sat) vs. T_J T_J, JUNCTION TEMPERATURE (°C)

175 150 125 100 75 50 25 0

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

7 V_GE = 13 V

to 20 V

T_J = 25°C

9 V 8 V 7 V

8 6

5 4 3 2 1 IC, COLLECTOR CURRENT (A)

7 T_J = 150°C

9 V 8 V 7 V

8 6

5 4 3 2 1 0 IC, COLLECTOR CURRENT (A)

7 T_J = −55°C

9 V 8 V

T_J = 25°C

T_J = 150°C

200

V_GE = 13 V to 20 V

V_GE = 20 V to 13 V

2 4 5 7

−75 −50 −25 2.5

2.0 1.5 1.0 0.5 0

I_C = 15 A

Figure 6. Typical Capacitance V_CE, COLLECTOR−EMITTER VOLTAGE (V)

90 80 50

40 30 20 10 0

C, CAPACITANCE (pF)

100 C_ies

C_oes C_res

70 60 10 V

11 V

10 V 11 V

10 V 11 V

9

T_J = 25°C 35

30 25

15 10 5 0

10,000

1000

100

1 45

0

40 45

12 13 14

3.0 40 35 30

20 15 10 5 0

45 40 35 30

20 15 10 5 0

45 40 35 30

20 15 10 5 0

25 25

11 10 6

3 1 20

10 25

TYPICAL CHARACTERISTICS

Figure 7. Typical Gate Charge Q_G, GATE CHARGE (nC)

60 40

20 0

0 2 4 6 8 12 14 16

VGE, GATE−EMITTER VOLTAGE (V)

100 10

V_CE = 600 V V_GE = 15 V

I_C = 15 A

Figure 8. Switching Loss vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0

SWITCHING LOSS (mJ)

160 V_CE = 600 V V_GE = 15 V I_C = 15 A Rg = 10 W E_off

Figure 9. Switching Time vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0 1000

SWITCHING TIME (ns)

160 V_CE = 600 V

V_GE = 15 V I_C = 15 A Rg = 10 W

Figure 10. Switching Loss vs. I_C I_C, COLLECTOR CURRENT (A)

20 15 10 5 2.5

SWITCHING LOSS (mJ)

V_CE = 600 V V_GE = 15 V T_J = 150°C

Rg = 10 W E_off

Figure 11. Switching Time vs. I_C I_C, COLLECTOR CURRENT (A) 1000

SWITCHING TIME (ns)

V_CE = 600 V V_GE = 15 V T_J = 150°C Rg = 10 W

t_f

t_d(off) 100

t_f

t_d(off)

25 30 35 1005 10 15 20 25 30 35

0.9

0.7 0.6

0.4 0.3

0.1 0

40 45

2.0

1.5

1.0

0.5 0

40 45

80 120

0.2 0.5 0.8

TYPICAL CHARACTERISTICS

t_d(off) Figure 12. Switching Loss vs. Rg

Rg, GATE RESISTOR (W) 45

35 25 15 5

SWITCHING LOSS (mJ)

V_CE = 600 V V_GE = 15 V T_J = 150°C I_C = 15 A

55 65 75 85

Figure 13. Switching Time vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING TIME (ns)

1000

55 65 75 85

Figure 14. Switching Loss vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

550 500 450 400 350

SWITCHING LOSS (mJ)

800 600

V_GE = 15 V T_J = 150°C I_C = 15 A Rg = 10 W

Figure 15. Switching Time vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

SWITCHING TIME (ns)

1000

Figure 16. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 1

0.1 1 10 100 1000

50 ms 100 ms 1 ms dc operation

Single Nonrepetitive Pulse T_C = 25°C Curves must be derated linearly with increase in temperature

Figure 17. Reverse Bias Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1 10 100 1000

V_GE = 15 V, T_C = 125°C

1000 100

10 1

t_f t_d(off) V_CE = 600 V

V_GE = 15 V T_J = 150°C I_C = 15 A

100

V_GE = 15 V T_J = 150°C I_C = 15 A Rg = 10 W

t_f

100 1.6

1.4

1.0 0.8 0.6 0.4 0.2 0

0.5 0.4 0.3 0.2 0.1 0

550 500 450 400

350 600 800

10k 10k

1.2

650 700 750 1.0

0.9 0.8 0.7 0.6

650 700 750

TYPICAL CHARACTERISTICS

Figure 18. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response ON−PULSE WIDTH (s)

1 0.1

0.01 0.0001

1

SQUARE−WAVE PEAK R(t) (°C/W)

0.00001 50% Duty Cycle 20%

10%

5%

2%

Single Pulse

R_qJC = 0.51

Junction

C₁ C₂ R₁ R₂

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

Case

C_n R_n 0.1

0.01

0.001

0.0001

0.001

R_i (°C/W) C_i (J/°C) 0.091186 0.003468

0.000001

0.066118 0.083897 0.201027 0.072182

0.015124 0.037692 0.049745 0.438100

Figure 19. Test Circuit for Switching Characteristics

Figure 20. Definition of Turn On Waveform

Figure 21. Definition of Turn Off Waveform

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

PACKAGE DIMENSIONS

98AON16119F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

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