NTNS3C68NZ MOSFET – Single, N-Channel, Small Signal, SOT-883, (XDFN3), 1.0 x 0.6 x 0.4 mm

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MOSFET – Single,

N-Channel, Small Signal, SOT-883, (XDFN3),

1.0 x 0.6 x 0.4 mm

12 V, 758 mA

Features

• Single N−Channel MOSFET

• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for Extremely Thin Environments such as Portable Electronics

• ^{Low R}

DS(on)

Solution in Ultra Small 1.0 x 0.6 mm Package

• 1.8 V Gate Drive

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Load Switch

• High Speed Interfacing

• Level Shift and Translate

• Optimized for Power Management in Ultra Portable Solutions

MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)

Parameter Symbol Value Units

Drain-to-Source Voltage V_DSS 12 V

Gate-to-Source Voltage V_GS ±8 V

Continuous Drain

Current (Note 1) Steady

State T_A = 25°C ID 758 mA

T_A = 85°C 547

t ≤ 5 s T_A = 25°C 898

Power Dissipa-

tion (Note 1) Steady

State T_A = 25°C P_D 156 mW

t ≤ 5 s T_A = 25°C 219 Pulsed Drain Current tp = 10 ms IDM 2.2 A Operating Junction and Storage

Temperature TJ,

T_STG -55 to

150 °C

Source Current (Body Diode) (Note 2) I_S 223 mA

www.onsemi.com

G (1)

S (2) N−Channel MOSFET

D (3)

SOT−883 (XDFN3) CASE 506CB

MARKING DIAGRAM

ORDERING INFORMATION 21

3

AC = Specific Device Code M = Date Code

AC M 12 V

0.175 W @ 3.7 V 0.160 W @ 4.5 V

R_DS(on) MAX I_D MAX V_(BR)DSS

MOSFET

0.185 W @ 3.3 V 0.230 W @ 2.5 V

758 mA 0.440 W @ 1.8 V

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OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 12 V

Drain-to-Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/TJ I_D = 250 mA, ref to 25°C 11 mV/°C

Zero Gate Voltage Drain Current I_DSS V_GS = 0 V,

VDS = 9.6 V T_J = 25°C 1.0 mA

Gate-to-Source Leakage Current I_GSS V_DS = 0 V, V_GS = ±10 V ±10 mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V_GS(TH) V_GS = V_DS, I_D = 250 mA 0.4 1.0 V

Negative Gate Threshold

Temperature Coefficient V_GS(TH)/T_J 1.1 mV/°C

Drain-to-Source On Resistance R_DS(on) V_GS = 4.5 V, I_D = 100 mA 0.120 0.160 W VGS = 3.7 V, ID = 75 mA 0.130 0.175 V_GS = 3.3 V, I_D = 75 mA 0.135 0.185 VGS = 2.5 V, ID = 50 mA 0.167 0.230 V_GS = 1.8 V, I_D = 20 mA 0.250 0.440 V_GS = 1.5 V, I_D = 10 mA 0.44

Forward Transconductance gFS VDS = 5 V, ID = 100 mA 0.8 S

Source−Drain Diode Voltage V_SD V_GS = 0 V, I_S = 100 mA 0.68 1.1 V

CHARGES & CAPACITANCES

Input Capacitance C_ISS

V_GS = 0 V, f = 1 MHz, V_DS = 9.6 V

67 pF

Output Capacitance COSS 19

Reverse Transfer Capacitance C_RSS 8.5

Total Gate Charge Q_G(TOT)

V_GS = 4.5 V, V_DS = 9.6 V, ID = 100 mA

1.8 nC

Threshold Gate Charge Q_G(TH) 0.1

Gate−to−Source Charge Q_GS 0.3

Gate−to−Drain Charge QGD 0.4

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)

Turn-On Delay Time t_d(ON)

V_GS = 4.5 V, V_DD = 9.6 V, I_D = 100 mA, R_G = 2 W

10.7 ns

Rise Time t_r 19.4

Turn-Off Delay Time td(OFF) 710

Fall Time t_f 310

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures.

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, DRAIN−TO−SOURCE VOLTAGE (V) V_GS, GATE−TO−SOURCE VOLTAGE (V)

2.0 1.6

1.4 1.0

0.6 0.2

0.000.0 0.080.16 0.240.32 0.40 0.48 0.56

2.2 2.0

1.2 2.4

1.0 0.6

00.4 0.1 0.2 0.3 0.6 0.7 0.8 1.0

Figure 3. On−Resistance vs. Gate−to−Source

Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage

V_GS, GATE VOLTAGE (V) I_D, DRAIN CURRENT (A)

7.0 6.0

5.0 8.0

4.0 3.0 2.0 801.0

90 100 120 130 150 160 180

0.7 0.6 0.5 0.4 0.3 0.2 00.1 100 200 300 600 700 900 1000

1.1 1.3 1.4 1.6

10 100 1000

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)−TO− ANCE (W) 0.64 0.72

VGS = 1.8 V

0.4 0.5 0.9

VDS = 10 V

T_J = −55°C T_J = 125°C

TJ = 25°C

110 140 170

TJ = 25°C I_D = 5 A

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

1.0 0.9 0.8 400

500 800

T_J = 25°C

V_GS = 2.5 V VGS = 4.5 V V_GS = 1.8 V V_GS = 1.5 V

1.2

1.5 V_GS = 4.5 V I_D = 0.075 A

T_J = 125°C

0.4 0.8 1.2 1.8 0.8 1.4 1.6 1.8

200 190

VGS = 2.0 V to 4.5 V

V_GS = 1.5 V

VGS = 1.2 V 0.80

0.880.96 1.04

1.121.20 1.2

1.1

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Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

12 10

4 2

10 10 100 1000

1.6 1.4 1.2 1.0 0.8 0.4

0.2 00 0.5 1.0 1.5 2.0 2.5

Figure 9. Resistive Switching Time Variation vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

R_G, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100 10

101 1000

1.0 0.9

0.8 0.7

0.6 0.5 0.10.4

1

Figure 11. Maximum Rated Forward Biased Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100 10

1 0.0010.01

0.01 0.1 1 10

C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V)

t, TIME (ns) IS, SOURCE CURRENT (A)

ID, DRAIN CURRENT (A)

6 0.6 1.8

VDS = 9.6 V ID = 0.1 A TJ = 25°C Q_GS QGD

V_GS = 0 V f = 1 MHz T_J = 25°C CISS

C_OSS C_RSS

VGS = 4.5 V VDS = 9.6 V ID = 0.1 A

t_r td(on)

t_f t_d(off)

T_J = −55°C T_J = 125°C T_J = 25°C

0 V ≤ VGS ≤ 4.5 V Single Pulse TA = 25°C TJ = 150°C

R_DS(on) Limit Thermal Limit Package Limit

100 ms 1 ms 10 ms dc 8

3.0 3.5

2.0

100

VGS = 0 V

0.1

4.0

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TYPICAL CHARACTERISTICS

Figure 12. FET Thermal Response t, TIME (s)

10

0.001 0.01

0.0001 1

0.00001 0.1

0.0000011 100 1000

R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) 10

100 1000

Duty Cycle = 0.5 0.2

0.1

Single Pulse 0.05 0.02 0.01

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ÉÉ

ISSUE A

DATE 30 MAR 2012 SCALE 8:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. EXPOSED COPPER ALLOWED AS SHOWN.

A B

E D

BOTTOM VIEW b

0.10 C

TOP VIEW 0.10 C

A

0.10 C A1 0.10 C

C ^SEATING_PLANE SIDE VIEW

DIM MIN MAX MILLIMETERS A 0.340 0.440 A1 0.000 0.030 b 0.075 0.200 D2 0.620 BSC

e 0.350 BSC

L 0.170 0.300

SOLDER FOOTPRINT*

DIMENSIONS: MILLIMETERS

1.10

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

1

GENERIC MARKING DIAGRAM*

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present.

XX = Specific Device Code M = Date Code

XX M

L

0.43

RECOMMENDED

D 0.950 1.075

E 0.550 0.675 E2 0.425 0.550

A 0.10 M C B 0.05 M C

e e/2

2X 3X

D2

E2

2X 0.41

0.55 0.20

2X PACKAGE

OUTLINE PIN ONE

REFERENCE

NOTE 3

3X

1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

98AON65407E DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 SOT−883 (XDFN3), 1.0X0.6, 0.35P

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NTNS3C68NZ MOSFET – Single, N-Channel, Small Signal, SOT-883, (XDFN3), 1.0 x 0.6 x 0.4 mm

MOSFET – Single,

N-Channel, Small Signal, SOT-883, (XDFN3),

1.0 x 0.6 x 0.4 mm

12 V, 758 mA

• Single N−Channel MOSFET

• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for Extremely Thin Environments such as Portable Electronics

• Low R

Solution in Ultra Small 1.0 x 0.6 mm Package

• 1.8 V Gate Drive

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

• Load Switch

• High Speed Interfacing

• Level Shift and Translate

• Optimized for Power Management in Ultra Portable Solutions

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

• ^{Low R}