N-Channel JFET 25 V, 20 to 40 mA, 40 mS, CPH3

DATA SHEET www.onsemi.com

© Semiconductor Components Industries, LLC, 2013

February, 2022 − Rev. 2 1 Publication Order Number:

CPH3910/D

N-Channel JFET

25 V, 20 to 40 mA, 40 mS, CPH3

CPH3910

Features

• ^V GDS : −25 V max.

• ⎢ y _fs ⎥ : 40 mS typ.

• ^C iss : 6.0 pF typ.

• ^N F : 2.1 dB typ.

• This is a Pb−Free Device Applications

• For AM Tuner RF Amplification

• Low Noise Amplifier

ABSOLUTE MAXIMUM RATINGS (at T

= 25°C)

Symbol Parameter Ratings Unit

V

Drain−to−Source Voltage 25 V

V

Gate−to−Drain Voltage −25 V

I

Gate Current 10 mA

I

Drain Current 50 mA

P

Allowable Power Dissipation 400 mW

T

Junction Temperature 150 ° C

T

Storage Temperature −55 to +150 ° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

Symbol Parameter Test Conditions Min Typ Max Unit

V

Gate−to−Drain Breakdown Voltage I

= −10 mA, V

= 0 V −25 V

I

Gate Cutoff Current V

= −10 V, V

= 0 V −1.0 nA

V

(off) Cutoff Voltage V

= 5 V, I

= 100 mA −0.6 −1.2 −1.8 V

I

Drain Current V

= 5 V, V

= 0 V 20 40 mA

⎢y

⎥ Forward Transfer Admittance V

= 5 V, V

= 0 V, f = 1 kHz 30 40 mS

C

Input Capacitance V

= 5 V, V

= 0 V, f = 1 MHz 6.0 pF

C

Reverse Transfer Capacitance V

= 5 V, V

= 0 V, f = 1 MHz 2.3 pF

N

Noise Figure V

= 5 V, V

= 0 V,

f = 100 MHz 2.1 2.8 dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

MARKING DIAGRAM CPH3 CASE 318BA

ELECTRICAL CONNECTION 3

1: Source 2: Drain 3: Gate

J2

Device Package Shipping

ORDERING INFORMATION

CPH3910−TL−E CPH3

(Pb−Free) 3 000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1 2

CPH3910

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. I

− V

0 0

V

, Drain−to−Source Voltage (V) I

, Drain Current (mA)

Figure 2. I

− V

Figure 3. I

− V

Figure 4. I

− V

Figure 5. X y

X − I

0.5 1.0 1.5 2.0

5 10 15 20 30

V

= 0 V

0 0

V

, Drain−to−Source Voltage (V) I

, Drain Current (mA)

2 4 6 8 10

5 15 25 30 40

0 −2.0

V

, Gate−to−Source Voltage (V) I

, Drain Current (mA)

−1.5 −1.0 −0.5 0

5 10 15 25 30

0.5 20

I

= 40 mA V

= 5 V

V

, Gate−to−Source Voltage (V) I

, Drain Current (mA)

T

= −25 ° C 25 ° C

75°C

Figure 6. X y

X − I

10

I

, Drain Current (mA)

10

100

100

7

5

3

2

1.0

I

, Drain Current (mA)

10

100

10

X y

X , Forward T ransfer Admittance (mS) 100

7 5 3 2

V

= 5 V f = 1 kHz I

= 30 mA 25

−0.2 V

−0.4 V

−0.6 V

−0.8 V

−1.0 V

10 20

35 V

= 0 V

−0.2 V

−0.4 V

−0.6 V

−0.8 V

−1.0 V

30 mA

20 mA 35

45 50

40

0 −2.0

−1.5 −1.0 −0.5 0

5 10 15 25 30

0.5 20

35 45 50

40

V

= 5 V

7 5 3 2

1.0

V

= 5 V V

= 0 V f = 1 kHz

X y

X , Forward T ransfer Admittance (mS)

CPH3910

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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 7. V

(off) − I

I

, Drain Current (mA) V

(off), Cutoff V oltage (V)

Figure 8. C

− V

Figure 9. C

− V

Figure 10. P

− T

V

, Drain−to−Source Voltage (V) C

, Input Capacitance (pF)

1.0

V

, Drain−to−Source Voltage (V) C

, Reverse T ransfer Capacitance (pF)

10

V

= 0 V f = 1 MHz

T

, Ambient Temperature ( 5 C) P

, Allowable Power Dissipation (mW)

10

100

1.0 10

7 5 3 2

1.0 10

100

10

7

5

3

2

1.0

7

5

3

2

1.0

10

100

450

0 20 160

0.1

7 5 3 2

V

= 5 V I

= 100 mA

2 3 5 7

V

= 0 V f = 1 MHz

400 350 300 250 200 150 100 50

0 40 60 80 100 120 140

CASE 318BA CPH3 ISSUE O

DATE 30 NOV 2011

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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