エッチングおよび界面制御効果による高結晶性一軸 配向多結晶Si膜の低温作製
著者 長谷川 誠一
著者別表示 Hasegawa Seiichi
雑誌名 平成11(1999)年度 科学研究費補助金 基盤研究(B) 研究成果報告書概要
巻 1997 1999
ページ 3p.
発行年 2001‑10‑22
URL http://doi.org/10.24517/00065987
Creative Commons : 表示 ‑ 非営利 ‑ 改変禁止 http://creativecommons.org/licenses/by‑nc‑nd/3.0/deed.ja
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1999 Fiscal Year Final Research Report Summary
The preparation of high quality polycrystalline Si films at low temperature using PECVD.
Research Project
Project/Area Number
09450124
Research Category
Grant-in-Aid for Scientific Research (B)
Allocation Type
Single-year Grants
Section
⼀般
Research Field
Electronic materials/Electric materials
Research Institution
Kanazawa University
Principal Investigator
HASEGAWA Seiichi Graduate School of Natural Science, Kanazawa University Professor, ⾃然科学研究科, 教授 (10019755)
Co-Investigator(Kenkyū-buntansha)
INOKUMA Takao Faculty of Technology, Kanazawa University Associate professor, ⼯学部, 助教授 (50221784)
Project Period (FY)
1997 – 1999
Keywords
Poly-Si / Nano-Si / Crystal Structure / Control of Interface / Etching Effects / Plasma Treatment on Substrates / Uniaxis / Surface Morphology
Research Abstract
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(18 results)All Other All Publications (18 results) The subject of this research is the preparation of highly crystallized polycrystalline Si films at low temperature using a plasma-enhanced chemical vapor deposition (PECVD) system, by utilizing effects of etching on the growing surface of films and those of a change in the surface morphology of substrates.
In the present work, we investigated the changes in the crystalline qualily as follows : Effects of SiFィイD24ィエD2 addition to a SiHィイD24ィエD2 feed gas. (2) Effects of HィイD22ィエD2 addition in addition to SiFィイD24ィエD2 in (1), (3) effects of a change in deposition temperature. And (4) effects of plasma-pretreatment on substrates prior to the deposition of Si films under fixed conditions. As a result, (1) the SiFィイD24ィエD2 addition enhances the crystallization of films deposited at a low temperature, but high flow-rate conditions of SiFィイD24ィエD2 caused an increase in the density of O atoms incorporated in the Si films after deposition. (2) The addition of HィイD22ィエD2 in addition to SiFィイD24ィエD2 under low temperature conditions further enhanced the crystallinity, but decreased the size of crystal grains. Furthermore, the HィイD22ィエD2 addition acted to suppress the incorporation of O atoms after deposition as stated in the above item (1). (3) The crystal quality of Si films strongly depended on the deposition temperature, Td : Under conditions of Td < 150 ℃ and Td * 650 ℃, the crystallization of the Si films was suppressed and the film structure was amorphous. (4) When Si films were deposited on substrates subjected to pretreatment of plasma using CFィイD24ィエD2, NィイD22ィエD2, and/or HィイD22ィエD2, the crystallinity of the Si films was enhanced. Such enhanced crystallinity was connected with preparation of substrates with a proper degree of surface roughness. Thus, the addition of SiFィイD24ィエD2 and HィイD22ィエD2 to a SiHィイD24ィエD2 feed gas and the plasma pretreatment of substrates are useful technologies for fabricating highly crystallized polycrystalline Si films at low temperature.
[Publications] A. M. Ali: "Effects of Addition of SiF_4 During Growth of Nano-Si Films at 100℃ by PECVD"Jpn. J. Appl. Phys.. 38,10. 6047-6053 (1999)
[Publications] M. Syed: "Structure of poly-Si films deposit at low temperature by plasma CVD on substrates exposed to different plasma"Thin Solid Films.
337. 27-31 (1999)
[Publications] D. Milovzorov: "Correlation between structural and optical properties of Nano-particles at low temperature by PECVD"NanoStructured
Materials. 8,10. 247-251 (1999)
[Publications] T. Inokuma: "Cathodoluminescence properties of Si nanocrystallites embedded in Si oxide thin films"J. Luminescence. 80. 247-251 (1999) [Publications] S. Hasegawa: "Structural change of polycrystalline Si films with different deposition temperature"J. Appl. Phys.. 85,7. 3844-3849 (1999)
[Publications] M. Syed: "Temperature Effects on the Structure of Poly-Si Films by Glow-Discharge Decomposition Using SiH_4/SiF_4"Jpn. J. Appl. Phys..
38,3A. 1303-1309 (1999)
[Publications] D. Milovzorov: "Relationship between structural and optical properties in poly-Si at low temperature by PECVD"J. Electrochem. Soc.. 145,10.
3615-3620 (1998)
[Publications] S. Hasegawa: "Initial Growth of Poly-Si Films on Substances Subjected to Different Plasma Treatments"Jpn. J. Appl. Phys.. 37,9A. 4711-4717
(1998)
[Publications] S. Hasegawa: "Effects of deposition temperature on poly-Si films using plasma-enhanced chemical vapor deposition"J. Appl. Phys.. 84,1.
584-588 (1998)
[Publications] A. M. Ali: "Effects of Addition of SiFィイD24ィエD2 During Growth of Nano-Si Films at 100℃ by PECVD"Jpn. J. Appl. Phys.. 38-10. 6047-6053
(1999)
[Publications] M. Syed: "Structure of poly-Si films deposited at low temperature by plasma CVD on substrates exposed to different plasma"Thin Solid Films.
337. 27-31 (1999)
[Publications] D. Milovzorov: "Correlation between structural and optical properties of nano-particles at low temperature by PECVD"NanoStructured
Materials. 8-10. 1301-1306 (1998)
[Publications] T. Inokuma: "Cathodoluminescece properties of Si nanocrystallites embedded in Si oxide films"J. Luminescence. 80. 247-251 (1999) [Publications] S. Hasegawa: "Structural change of polycrystalline Si films with different deposition temperature"J. Appl. Phys.. 85-7. 3844-3849 (1999) [Publications] M. Syed: "Temperature Effects on the Structure of Poly-Si Films by Glow-Discharge Decomposition Using SiHィイD24ィエD2/SiFィイD24ィエ
D2"Jpn. J. Appl. Phys.. 38-3A. 1303-1309 (1999)
Published: 2001-10-22 URL: https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-09450124/094501241999kenkyu_seika_hokoku_
[Publications] D. Milovzorov: "Relationship between structural and optical properties in poly-Si films at low temperature by PECVD"J. Electrochem. Soc..
145-10. 3615-3620 (1998)
[Publications] S. Hasegawa: "Initial Growth of Poly-Si Films on Substrates Subjected to Different Plasma Treatments"Jpn. J. Appl. Phys.. 37-9A. 4711-4717
(1998)
[Publications] S. Hasegawa: "Effects of deposition temperature on poly-Si films using plasma-enhanced chemical vapor deposition"J. Appl. Phys.. 84-1.
584-588 (1998)
