General Purpose Transistors

(1)

General Purpose Transistors

NPN and PNP Silicon

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

Features

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1

V_CEO

−4040

Vdc

Collector−Base Voltage

V_CBO

−4060

Vdc

Emitter−Base Voltage

VEBO

−5.06.0

Vdc

Collector Current − Continuous

I_C

−200200

mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation (Note 1)

@T_A = 25°C P_D 150 mW

Thermal Resistance, Junction−to−Ambient R_qJA 833 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.

COLLECTOR 3

BASE1

2 EMITTER

Device Package Shipping^† ORDERING INFORMATION xx = AM for MMBT3904WT1,

SMMBT3904WT

= 2A for MMBT3906WT1, SMMBT3906WT1 M = Date Code*

G = Pb−Free Package

MMBT3906WT1G,

SMMBT3906WT1G SC−70/

SOT−323 (Pb−Free)

3000 / Tape &

Reel MMBT3904WT1G,

SMMBT3904WT1G SC−70/

SOT−323 (Pb−Free)

3000 / Tape &

Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up- on manufacturing location.

SC−70 (SOT−323) CASE 419

STYLE 3 3

1 2

MARKING DIAGRAM xx MG

G 1

(2)

Characteristic Symbol Min Max Unit OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0) MMBT3904WT1, SMMBT3904WT1 (I_C = −1.0 mAdc, I_B = 0) MMBT3906WT1, SMMBT3906WT1

V_(BR)CEO

−4040 −

−

Vdc

Collector−Base Breakdown Voltage

(I_C = 10 mAdc, IE = 0) MMBT3904WT1, SMMBT3904WT1 (IC = −10 mAdc, IE = 0) MMBT3906WT1, SMMBT3906WT1

V(BR)CBO

−4060 −

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) MMBT3904WT1, SMMBT3904WT1 (I_E = −10 mAdc, IC = 0) MMBT3906WT1, SMMBT3906WT1

V_(BR)EBO

−5.06.0 −

−

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 (V_CE = −30 Vdc, V_EB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1

I_BL

−− 50

−50

nAdc

Collector Cutoff Current

(V_CE = 30 Vdc, V_EB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 (V_CE = −30 Vdc, V_EB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1

I_CEX

−− 50

−50

nAdc

ON CHARACTERISTICS (Note 2) DC Current Gain

(I_C = 0.1 mAdc, V_CE = 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1 (I_C = 1.0 mAdc, V_CE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc) (I_C = 50 mAdc, V_CE = 1.0 Vdc) (I_C = 100 mAdc, V_CE = 1.0 Vdc)

(I_C = −0.1 mAdc, V_CE = −1.0 Vdc) MMBT3906WT1, SMMBT3906WT1 (IC = −1.0 mAdc, VCE = −1.0 Vdc)

(I_C = −10 mAdc, V_CE = −1.0 Vdc) (I_C = −50 mAdc, V_CE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc)

hFE

4070 10060

30 6080 10060

30

−− 300−

−

−− 300−

−

Collector−Emitter Saturation Voltage

(I_C = 10 mAdc, I_B = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 (I_C = 50 mAdc, I_B = 5.0 mAdc)

(I_C = −10 mAdc, I_B = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 (I_C = −50 mAdc, I_B = −5.0 mAdc)

VCE(sat)

−−

0.20.3

−0.25

−0.4

Vdc

Base−Emitter Saturation Voltage

(I_C = 10 mAdc, I_B = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 (I_C = 50 mAdc, I_B = 5.0 mAdc)

(IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 (I_C = −50 mAdc, I_B = −5.0 mAdc)

V_BE(sat)

0.65−

−0.65

−

0.850.95

−0.85

−0.95

Vdc

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

(3)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product

(I_C = 10 mAdc, V_CE = 20 Vdc, f = 100 MHz) MMBT3904WT1, SMMBT3904WT1 (I_C = −10 mAdc, V_CE = −20 Vdc, f = 100 MHz) MMBT3906WT1, SMMBT3906WT1

fT

300250 −

−

MHz

Output Capacitance

(V_CB = 5.0 Vdc, I_E = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 (V_CB = −5.0 Vdc, I_E = 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1

Cobo

−− 4.0 4.5

pF

Input Capacitance

(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1

C_ibo

−− 8.0 10.0

pF

Input Impedance

(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 (V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1

h_ie

1.02.0 10 12

k W

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 (V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1

h_re

0.50.1 8.0 10

X 10⁻⁴

Small−Signal Current Gain

hfe

100100 400 400

− Output Admittance

h_oe

1.03.0 40 60

mmhos Noise Figure

(V_CE = 5.0 Vdc, I_C = 100 mAdc, R_S = 1.0 k W, f = 1.0 kHz)

MMBT3904WT1, SMMBT3904WT1 (V_CE = −5.0 Vdc, I_C = −100 mAdc, R_S = 1.0 k W, f = 1.0 kHz)

MMBT3906WT1, SMMBT3906WT1

NF

−− 5.0 4.0

dB

SWITCHING CHARACTERISTICS

Characteristic Condition Symbol Min Max Unit

Delay Time (V_CC = 3.0 Vdc, V_BE = −0.5 Vdc)

MMBT3904WT1, SMMBT3904WT1 (V_CC = −3.0 Vdc, V_BE = 0.5 Vdc)

t_d

−−

3535 ns

Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc)

MMBT3904WT1, SMMBT3904WT1 (I_C = −10 mAdc, I_B1 = −1.0 mAdc)

MMBT3906WT1, SMMBT3906WT1 t_r

−−

3535

Storage Time (V_CC = 3.0 Vdc, I_C = 10 mAdc)

MMBT3904WT1, SMMBT3904WT1 (VCC = −3.0 Vdc, IC = −10 mAdc)

ts

−−

200225 ns

Fall Time (I_B1 = I_B2 = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 (I_B1 = I_B2 = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1

tf −

− 50

75

(4)

Figure 1. Delay and Rise Time

Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit

+3 V 275 10 k

1N916 C_S< 4 pF*

+3 V 275 10 k

C_S < 4 pF*

< 1 ns -0.5 V

+10.9 V 300 ns

DUTY CYCLE = 2%

< 1 ns -9.1 V

+10.9 V DUTY CYCLE = 2%

t₁

0 10 < t₁ < 500 ms

* Total shunt capacitance of test jig and connectors

(5)

MMBT3904WT1, SMMBT3904WT1 TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Turn−On Time I_C, COLLECTOR CURRENT (mA) 70

100 200 300 500

50

Figure 4. Rise Time I_C, COLLECTOR CURRENT (mA)

TIME (ns)

1.0 2.0 3.0 10 20 70

5

100

t , RISE TIME (ns)

Figure 5. Storage Time I_C, COLLECTOR CURRENT (mA)

Figure 6. Fall Time I_C, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

10 30

7 20

70 100 200 300 500

50

1.0 2.0 3.0 10 20 70

5

100

5.0 7.0 30 50 200

10 30

7 20

70 100 200 300 500

50

1.0 2.0 3.0 10 20 70

5

100

5.0 7.0 30 50 200

10 30

7 20 70

100 200 300 500

50

1.0 2.0 3.0 10 20 70

5

100

5.0 7.0 30 50 200

10 30

7 20

rt , FALL TIME (ns)f

t , STORAGE TIME (ns)s′

V_CC = 40 V I_C/I_B = 10

V_CC = 40 V I_B1 = I_B2 I_C/I_B = 20

I_C/I_B = 10 I_C/I_B = 10

t_r @ V_CC = 3.0 V

t_d @ V_OB = 0 V

40 V 15 V 2.0 V

I_C/I_B = 10 I_C/I_B = 20 I_C/I_B = 10

I_C/I_B = 20

t′s = t_s - ¹/₈ t_f I_B1=I_B2 MMBT3904WT1

MMBT3904WT1

MMBT3904WT1 MMBT3904WT1

T_J = 25°C T_J = 125°C

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V

_CE

= 5.0 VDC, T

_A

= 25 ° C, BANDWIDTH = 1.0 HZ)

Figure 7. Noise Figure f, FREQUENCY (kHz) 4

6 8 10 12

2

0.1

Figure 8. Noise Figure R_S, SOURCE RESISTANCE (k OHMS) 0

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4 0

100

4 6 8 10 12

2 14

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

f = 1.0 kHz I_C = 1.0 mA I_C = 0.5 mA

I_C = 50 mA I_C = 100 mA SOURCE RESISTANCE = 200 W

I_C = 1.0 mA

SOURCE RESISTANCE = 200 W I_C = 0.5 mA

SOURCE RESISTANCE = 500 W I_C = 100 mA

SOURCE RESISTANCE = 1.0 k I_C = 50 mA

(6)

H PARAMETERS

(V_CE = 10 VDC, F = 1.0 KHZ, T_A = 25°C)

Figure 9. Current Gain I_C, COLLECTOR CURRENT (mA) 70

100 200 300

50

Figure 10. Output Admittance I_C, COLLECTOR CURRENT (mA)

h , CURRENT GAIN h , OUTPUT ADMITTANCE ( mhos)

Figure 11. Input Impedance I_C, COLLECTOR CURRENT (mA)

Figure 12. Voltage Feedback Ratio I_C, COLLECTOR CURRENT (mA) 30

100 50

5 10 20

2.0 3.0 5.0 7.0 10

1.0

0.1 0.2 1.0 2.0 5.0

0.5

10

0.3 0.5 3.0

0.7 2.0

5.0 10 20

1.0

0.2 0.5

oeh , VOLTAGE FEEDBACK RATIO (X 10 )re

h , INPUT IMPEDANCE (k OHMS)ie

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

2 1

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

fe m-4

TYPICAL STATIC CHARACTERISTICS

Figure 13. DC Current Gain I_C, COLLECTOR CURRENT (mA) 100

1000

10 1.0

T_J = 150°C 25°C -55°C

hFE, DC CURRENT GAIN

10 100 1000

V_CE = 1 V

MMBT3904WT1

(7)

MMBT3904WT1, SMMBT3904WT1

Figure 14. Collector Saturation Region I_B, BASE CURRENT (mA)

0.4 0.6 0.8 1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 10

0.2 0.3 0

1.0

0.7 5.0 7.0

CE

I_C = 1.0 mA

T_J = 25°C

0.07 0.05 0.03 0.02 0.01

10 mA 30 mA 100 mA

MMBT3904WT1

Figure 15. Collector Emitter Saturation Voltage

vs. Collector Current Figure 16. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1 0.1

0.01 0.001

0 0.1 0.3 0.4 0.5 0.7 0.8 0.9

1 0.1

0.01 0.001

0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Figure 17. Base Emitter Voltage vs. Collector Current

IC, COLLECTOR CURRENT (A)

1 0.1

0.01 0.001

0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V) 0.2

0.6

IC/IB = 10

150°C

−55°C 25°C

IC/IB = 10

150°C

−55°C 25°C

150°C

−55°C 25°C

V_CE = 1 V

(8)

Figure 18. Temperature Coefficients I_C, COLLECTOR CURRENT (mA) -0.5

0 0.5 1.0

0 20 40 60 80 100 120 140 160 180

COEFFICIENT (mV/ C)

200 -1.0

-1.5 -2.0

°

+25°C TO +125°C -55°C TO +25°C

+25°C TO +125°C -55°C TO +25°C qVC FOR V_CE(sat)

qVB FOR V_BE(sat) MMBT3904WT1

Figure 19. Capacitance REVERSE BIAS VOLTAGE (VOLTS) 2.0

3.0 5.0 7.0 10

1.0 0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7

C_ibo

C_obo T_J = 25°C T_J = 125°C

MMBT3904WT1

Figure 20. Current Gain Bandwidth Product

vs. Collector Current Figure 21. Safe Operating Area

I_C, COLLECTOR CURRENT (mA) V_CE, COLLECTOR EMITTER VOLTAGE (V) 1000

100 10

1 100.1

100 1000

100 10

1 0.0010.1

0.01 0.1 1

fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) IC, COLLECTOR CURRENT (A)

V_CE = 1 V

T_A = 25°C 1 mS

Thermal Limit 1 S

100 mS 10 mS

(9)

MMBT3906WT1, SMMBT3906WT1

Figure 22. Delay and Rise Time Equivalent Test Circuit

Figure 23. Storage and Fall Time Equivalent Test Circuit

3 V 275 10 k

1N916 C_S< 4 pF*

3 V 275 10 k

C_S < 4 pF*

< 1 ns

+10.6 V

300 ns DUTY CYCLE = 2%

< 1 ns +9.1 V

10.9 V DUTY CYCLE = 2%

t₁ 0

10 < t₁ < 500 ms

* Total shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

T_J = 25°C T_J = 125°C

Figure 24. Turn−On Time I_C, COLLECTOR CURRENT (mA) 70

100 200 300 500

50

TIME (ns)

1.0 2.0 3.0 10 20 70

5

100

5.0 7.0 30 50 200

10 30

7 20

I_C/I_B = 10

t_r @ V_CC = 3.0 V

t_d @ V_OB = 0 V

40 V 15 V

2.0 V MMBT3906WT1

Figure 25. Fall Time I_C, COLLECTOR CURRENT (mA) 70

100 200 300 500

50

1.0 2.0 3.0 10 20 70

5

100

5.0 7.0 30 50 200

10 30

7 t , FALL TIME (ns)f 20

V_CC = 40 V I_B1 = I_B2 I_C/I_B = 20

I_C/I_B = 10 MMBT3906WT1

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

(V_CE = −5.0 VDC, T_A = 25°C, BANDWIDTH = 1.0 HZ)

f = 1.0 kHz I_C = 1.0 mA I_C = 0.5 mA

I_C = 50 mA I_C = 100 mA SOURCE RESISTANCE = 200 W

I_C = 1.0 mA

SOURCE RESISTANCE = 200 W I_C = 0.5 mA

Figure 26.

f, FREQUENCY (kHz) 1.0

2.0 3.0 4.0 5.0

0.1

Figure 27.

R_S, SOURCE RESISTANCE (kW) 0

1.0 2.0 4.0 10 20 40

0.2 0.4 0

100

4.0 6.0 8.0 10

2.0 12

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

(10)

H PARAMETERS

hfe, CURRENT GAIN

Figure 28. Current Gain I_C, COLLECTOR CURRENT (mA) 70

100 200 300

50

Figure 29. Output Admittance I_C, COLLECTOR CURRENT (mA)

h , OUTPUT ADMITTANCE ( mhos)

Figure 30. Input Impedance I_C, COLLECTOR CURRENT (mA)

Figure 31. Voltage Feedback Ratio I_C, COLLECTOR CURRENT (mA) 30

100 70

10 30

2.0 3.0 5.0 7.0 10

1.0

0.1 0.2 1.0 2.0 5.0

0.5

0.5 10 0.7

2.0 5.0 10 20

1.0

0.2 0.5

oeh , VOLTAGE FEEDBACK RATIO (X 10 )re

h , INPUT IMPEDANCE (k ie

0.1 0.2 0.5 1.0 2.0 5.0 10

7.0 5.0

0.1 0.2 0.5 1.0 2.0 5.0 10

m-4

(V_CE = −10 VDC, F = 1.0 KHZ, T_A = 25°C)

50

20

Ω)

0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0

0.3 0.7 3.0 7.0

0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0

STATIC CHARACTERISTICS

Figure 32. DC Current Gain I_C, COLLECTOR CURRENT (mA) 100

1000

10 1.0

T_J = 150°C 25°C -55°C

hFE, DC CURRENT GAIN

10 100 1000

V_CE = 1 V

MMBT3906WT1

(11)

MMBT3906WT1, SMMBT3906WT1

Figure 33. Collector Saturation Region I_B, BASE CURRENT (mA)

0.4 0.6 0.8 1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 10

0.2 0.3

0 0.7 1.0 5.0 7.0

CE

I_C = 1.0 mA

T_J = 25°C

0.07 0.05 0.03 0.02 0.01

10 mA 30 mA 100 mA

MMBT3906WT1

Figure 34. Collector Emitter Saturation Voltage vs. Collector Current

Figure 35. Base Emitter Saturation Voltage vs.

Collector Current

I_C, COLLECTOR CURRENT (A) I_C, COLLECTOR CURRENT (A)

1 0.1

0.01 0.001

0 0.05 0.15 0.20 0.25 0.40 0.45 0.50

1 0.1

0.01 0.001

0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Figure 36. Base Emitter Voltage vs. Collector Current

I_C, COLLECTOR CURRENT (A)

1 0.1

0.01 0.001

0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V) 0.10

0.30

I_C/I_B = 10

150°C

−55°C 25°C

I_C/I_B = 10

150°C

−55°C 25°C

150°C

−55°C 25°C

V_CE = 1 V 0.35

(12)

Figure 37. Temperature Coefficients I_C, COLLECTOR CURRENT (mA) -0.5

0 0.5 1.0

0 20 40 60 80 100 120 140 160 180 200

-1.0 -1.5 -2.0

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C -55°C TO +25°C qVC FOR V_CE(sat)

qVS FOR V_BE(sat)

V, TEMPERATURE COEFFICIENTS (mV/C)°θ

MMBT3906WT1

C_ibo C_obo

Figure 38. Capacitance REVERSE BIAS VOLTAGE (VOLTS) 2.0

3.0 5.0 7.0 10

1.0 0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7

T_J = 25°C T_J = 125°C

MMBT3906WT1

Figure 39. Current Gain Bandwidth Product vs. Collector Current

Figure 40. Safe Operating Area I_C, COLLECTOR CURRENT (mA) V_CE, COLLECTOR EMITTER VOLTAGE (V)

1000 100

10 1

100.1 100 1000

100 10

1 0.0010.1

0.01 0.1 1

fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) IC, COLLECTOR CURRENT (A)

VCE = 1 V TA = 25°C

1 mS

Thermal Limit

1 S 100 mS 10 mS

(13)

SC−70 (SOT−323) CASE 419

ISSUE R

DATE 11 OCT 2022 SCALE 4:1

STYLE 3:

PIN 1. BASE 2. EMITTER 3. COLLECTOR

STYLE 4:

PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 2:

PIN 1. ANODE 2. N.C.

3. CATHODE STYLE 1:

CANCELLED

STYLE 5:

PIN 1. ANODE 2. ANODE 3. CATHODE

STYLE 6:

PIN 1. EMITTER 2. BASE 3. COLLECTOR

STYLE 7:

PIN 1. BASE 2. EMITTER 3. COLLECTOR

STYLE 8:

PIN 1. GATE 2. SOURCE 3. DRAIN

STYLE 9:

PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE

STYLE 10:

PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE

XX MG G

XX = Specific Device Code M = Date Code

G = Pb−Free Package GENERIC MARKING DIAGRAM

1

STYLE 11:

PIN 1. CATHODE 2. CATHODE 3. CATHODE

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

98ASB42819B DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 SC−70 (SOT−323)

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

(14)

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

TECHNICAL SUPPORT

North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada LITERATURE FULFILLMENT:

Email Requests to: [email protected] Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910

www.onsemi.com/site/pdf/Patent−Marking.pdf.