太陽光水素製造を目指した 可視光応答型半導体光触媒の開発
京都大学大学院工学研究科 阿部 竜
2018 1 30 2
CO
2H
2O H
2(or H
2O
2) + 1/2O
2CO
2(or CO)
N
2NH
3地表における太陽光スペクトル(AM1.5)
Wavelength / nm
2.01.5
1.0
0.5
0.0
1200 1000
800 600
400 200
Visible light Infrared
UV
Sp e ct ra l I rr a d ia n ce / W m
−2nm
−1500 nm
実用化への課題:太陽光スペクトル(可視光)の有効利用
5 4 3 2 1 0
x1018
1200 1000
800 600
400 200
Wavelength / nm Ph o to n n u m b e r / 1 0
18m
−2nm
−2s
−1(ΔG° = 237 kJ/mol) ca. 2%
ca. 16%
ca. 32%
0.05
3.1 eV 1.6 eV
5
水分解系における変換効率の現状
Honda Soltec
High (10%~) Middle (~ 3%) Low (~ 1 %)
~2%
e− e−
H2
Visible light
e!
h+ O2 External bias
H2O O2 H+
H2 e−
e−
e− h+
H+ H2
H2O O2
6
太陽光水素製造におけるコスト試算例
6
T. F. Jaramillo et al.,
Energy Environ. Sci., 2013, 6, 1983
Type 1: Single Bed Particle Suspension STH Efficiency 10%
Type 2: Dual Bed Particle Suspension STH Efficiency 5%
Type 3: Fixed Panel Array STH Efficiency 10%
Type 4: Tracking Concentrator Array STH Efficiency 15%
DOE Fuel Cell Tech. Program’s Target: $2.00 - 4.00 per kg H
27
水分解系における変換効率の現状
Honda Soltec
High (10%~) Middle (~ 3%) Low (~ 1 %)
~2%
e− e−
H2
Visible light
e!
h+ O2 External bias
H2O O2
H+ H2 e−
e−
e− h+
H+ H2
H2O O2
8
光触媒(光電極)を用いた水分解:何がポイントか?
Honda Soltec e− e−
H2
Visible light
e!
h+ O2 External bias
H2O O2
H+ H2 e−
e−
e− h+
H+ H2
H2O O2
1
9
人工光合成研究の歴史(概要)
各種複合酸化物による水分解
・層状化合物 K4Nb6O17(堂免)
・トンネル構造化合物 Na2Ti6O13(井上)
1990
1998
NaTaO3による高効率 (Q.E. 50%) 水分解(工藤)1969
TiO2光触媒粒子による水蒸気分解(佐藤)
RhOx-SrTiO3光触媒による水蒸気分解(Lehn)
NiOx-SrTiO3光触媒粒子による水の分解(堂免)
1980
全て紫外光 TiO
2光電極による水分解の発見(本多・藤嶋)
1986
Re錯体による二酸化炭素還元(Lehn)10
なぜ可視光水分解は困難か?
H+ H2
O2 H2O e−
e−
h+ h+ (H2/H+)
(H2O/O2) 0 + 1.23
(SHE, pH=0)
ca. + 3.0
(B.G. > 3.0 eV) (B.G. < 3.0 eV)
2p 2p
CB
(or HOMO) (or LUMO)
(a) (b) (c)
なぜ可視光水分解は困難か?
/eV Scaife D. E. Scaife, Solar Energy, 25(1980) 41
d0 d10 d
B.G. < 3.0 eV
O-2p
V.B.O-2p
WO3Potential / V vs. SHE
0 +1.0
+3.0
+2.0 -1.0
C.B.
2.6 eV
H+/H2O2/H2O
1.0 0.8 0.6 0.4 0.2 0
−0.2
−0.4
−0.6
−0.8
−1.0 SrNbO
6
Sr0.5Ba0.5Nb2O6
Ba0.5La0.2Nb2O6
BaNb2O6
MgTi2O5
ZnNb2O6
Ba6Ti2Nb8O30
Ba0.8Ca0.2TiO3
LaNbO4
ZnO KNbO3
Nb2O5
BaSnO3
SnO2
CdIn2O4
In2O3
Ba0.67Ca0.33Nb2O6
CaTiO3
NiNbO6
NbO2
MgTiO3
SrTiO3
TiO2 TiNb2O7
WNb2O8
CrTi2O7
FeNbO4
Cd2SnO4
CdO FeTiO3
Fe2TiO5
Sr2FeNbO6
FeTaO4
FeTa2O6
Sr0.5Ba0.5TiO3
BaTiO3
CrNbO4
U3O8
Fe2O3
2.0 2.5 3.0 3.5 4.0
La2Ti2O7
WO3
3.1 eV
TiO2 水素生成不可能
/V vs. SHE
可視光水分解への戦略1:二段階励起機構
(e.g., TiO2, SrTiO3)
e
−(e.g., WO3, Fe2O3)
e
−h
+H
2O
O
2H
+H
2 (水素生成不能)還元力不足Potential (V vs. SHE)
+ 0
+1.23
(H+/H2)(O2/H2O)
C.B.
O 2p V.B.
酸化力不足 (酸素生成不能・不安定)
e
−h
+h
+e
−CdS + nh
+→ Cd
2++ SO
42−etc.
13
可視光水分解への戦略2:混合アニオン系への展開
(e.g., TiO2, SrTiO3)
e
−(e.g., WO3, Fe2O3)
e
−h
+H
2O
O
2H
+H
2 (水素生成不能)還元力不足Potential (V vs. SHE)
+ 0
+1.23
(H+/H2)(O2/H2O)
C.B.
O 2p V.B.
e
−h
+h
+H
+H
2H
2O O
2O-2p N-2p, S-3p, X-np
Chem. Phys. Lett. 2001; Chem. Commun.2001;
J. Photochem. Photobiol. A 2001; Chem. Phys. Lett. 2002;
Chem. Phys. Lett. 2003; J. Photochem. Photobiol. A 2004;
J. Phys. Chem.B, 2005;Chem. Commun.2005; Chem. Lett. 2008;
Chem. Phys. Lett. 2008; Chem. Mater. 2009; Chem. Commun. 2009;
Langmuir2010; J. Am. Chem. Soc. 2010;ChemSusChem2011;
J. Phys. Chem.C, 2011;J. Photochem. Photobiol. C (Invited)2011;
Bull. Chem. Sos. Jpn (Award account) 2011; Energy Environ. Sci. 2012;
J. Am. Chem. Soc. 2013; Catal. Sci. Tech. 2015; J. Am. Chem. Soc. 2016 (Fe3+)
(Fe2+)
二段階可視光励起型水分解システム
研究の概要
Bi4NbO8Cl
可視光酸素生成用酸窒化物光アノード
Chem. Lett. 2005; J. Am. Chem. Soc. 2010;
Thin Solid Films 2010;Energy Environ. Sci. 2011;
J. Am. Chem. Soc. 2011;J. Am. Chem. Soc. 2012;
J. Am. Chem. Soc. 2013;ChemElectroChem, 2015;
Catal. Sci. Technol.2015;APL Materials,2015;
Topics in Catalysis 2016
e− e−
H2
Visible light
e!
h+ O2
External bias
H2O O2
H+ H2
e− e−
TaON BaTaO2N
NbON Ta3N5
二段階光励起型可視光水分解システム
15
RedOx H+/H2
O2/H2O
h+ e−
Visible light
H2O O2 Potential
Ox/Red
O2 evolution photocatalyst
h+
H+ H2
Visible light
e−
H2 evolution photocatalyst
+
様々な可視光応答型光触媒が利用可能に
酸素生成系:水素生成能を有さない酸化物(WO3
など)
水素生成系:酸素生成能を有さない非酸化物・色素など
レドックスを用いた光触媒系(水素生成)における逆反応
16
0+1.23 (H+/H2)
(O2/H2O) (Ox/Red)
Red Ox
e−
H+ H2
h+ e−
e−
hn
e−
h+ e−
e−
H2O O2
hn
Red
Red Ox
e
−+ Ox
Ox
逆反応による水素生成の停止
17
(Reaction conditions)
Pt(0.5 wt%)-SrTiO3(Cr-doped): 0.3 g 30 mM-NaI aqueous solution: 250 mL (pH = 6.5) 300 W Xe-lamp, L-42 cut-off filter
Time / h Am o u n t o f H
2ev ol ved /
µmo l
IO3– e– (IO3–/I–)
I–
Potential (V vs. NHE)
pH=7 +0.67 -0.41 (H+/H2) H2production over Pt-SrTiO3(Cr-doped) photocatalyst
IO3– (IO3–/I–)
I–
Potential (V vs. NHE)
pH=7 +0.67 -0.41 (H+/H2)
e
−h
+H+ H2
e–
H+ H2
I–
IO3– Re-reduction of IO3
e
– 1412 10 8 6 4 2 0
10 8 6 4 2 0
I− 0.3 H2
Pt-SrTiO
3/Cr
0
+1.23 (H+/H2)
(O2/H2O) (Ox/Red)
Red Ox
e−
H+ H2
h+ e−
e−
H
2production hn
e−
h+ e−
e−
H2O O2
O
2production
hn
+
Red
Ox
e
−レドックスを用いた光触媒系(酸素生成)における逆反応
18
Pt-BiVO4 とIO3 の組み合わせによる酸素生成
e
–I– IO3– e−
h+ H2O
O2
Pt-BiVO
4hn
e
–I– IO3–
Potential (V vs. NHE)
pH=7 (IO3–/I–)
+0.82 +0.67
(O2/H2O)
Am o u n t o f O
2ev ol ved /
µmo l
Time / h
O2evolution over Pt-BiVO4photocatalyst
In the presence of IO
3−(0.1 mM, 250 µmol)
4030
20
10
0
20 15 10 5 0
without NaI with NaI (10 mM)
Pt-WO3とIO3の組み合わせによる選択的酸素生成反応
e
–I– IO3– e−
h+ H2O
O2
Pt-WO
3hn
e
–I– IO3–
Potential (V vs. NHE)
pH=7 (IO3–/I–)
+0.82 +0.67
(O2/H2O)
Am o u n t o f O
2ev ol ved /
µmo l
Time / h
O2evolution over Pt-WO3photocatalyst
In the presence of IO
3−(0.1 mM, 250 µmol)
500400 300 200 100
0
100 80 60 40 20 0
IO
3− −Expected amount of O
2(375 µmol)
I
− 500400 300 200 100
0
100 80 60 40 20 0
with NaI (10 mM)
WO3上におけるIO3とIの吸着特性
21 WO
3e
–e−
h+ H2O
O2
hn
e
–(IO
3–/I
–)
+0.82 +0.67 (O
2/H
2O)
IO3−
IO3− I− I−
I− I−
H2O O2 e−
e− h+
h+
IO
3−IO3−
e
–Concentration of anion / mM
Am o u n t o f a n io n s a d so rb e d /
µmo l g
−1Adsorption of IO3−andI−on WO3
IO
3−I
−6 5 4 3 2 1 0
20 15 10 5 0
Pt-BiVO4 とIO3 の組み合わせによる酸素生成
22 e
–I– IO3– e−
h+ H2O
O2
Pt-BiVO
4hn
e
–I– IO3–
Potential (V vs. NHE)
pH=7 (IO3–/I–)
+0.82 +0.67
(O2/H2O)
Am o u n t o f O
2ev ol ved /
µmo l
Time / h
O2evolution over Pt-BiVO4photocatalyst
In the presence of IO
3−(0.1 mM, 250 µmol)
4030
20
10
0
20 15 10 5 0
without NaI with NaI (10 mM)
BiVO4上におけるIO3とIの吸着特性
23 BiVO
4e
–e−
h+ H2O
O2
hn
e
–(IO
3–/I
–)
+0.82 +0.67 (O
2/H
2O)
IO3−
IO3− I− I−
I− I−
H2O O2 e−
e− h+
h+
IO
3− IO3−e
–Concentration of anion / mM
Am o u n t o f a n io n s a d so rb e d /
µmo l g
−1Adsorption of IO3−andI−on BiVO4
IO
3−I
−5 4 3 2 1
0
20 15 10 5 0
Visible light induced water splitting with two-step photoexcitation
24
h+
h+ e−
Visible light
I
−IO
3−H2O O2
H+ H2
Visible light
e−
O2 evolution photocatalyst
H2 evolution photocatalyst
PtOx/WO3
Pt-SrTiO :Cr
3Pt-WO
3
NaI
PtOx/WO3 Pt/SrTiO3:Cr
NaI (+NaIO3)
Pt/SrTiO3(Cr,doped)
R. Abe, K. Sayama et al. Chem. Commun.2001;
Chem. Phys. Lett. 2001;
J. Photochem. Photobiol. A:Chem.
2001; J. Phys. Chem. B 2005The world’s first demonstration of visible light driven overall water splitting
Amount of gas evolved / µmol
Time / h 500
400
300
200
100
0
200 150 100 50 0
H2
O2
dark
evac.
Q.E. ~ 0.5% at 420 nm
水素生成用光触媒としてのオキシナイトライド
25
(e.g., TiO2, SrTiO3)e
−(e.g., WO3, BiVO4)
H
2O
O
2H
+H
2 (水素生成不可)還元力不足Potential (V vs. NHE)
+ 0
+1.23
(H+/H2)(O2/H2O)
C.B.
O 2p V.B.
e
−h
+h
+(e.g., TaON, BaTaO
2N) O 2p + N 2p hybridization
e
−h
+NH3処理によるオキシナイトライドの調製
26 Ta
2O
5Ba
2Ta
2O
7NH
3気流中 850~900℃
TaON, Ta
3N
5BaTaO
2N
4
3
2
1
0
800 700 600 500 400 300
Wavelength / nm
K.M.
Ta
2O
5Ta3N5
Ta3N5 BaTaO2N TaON
Ta
2O
5TaON BaTaO2N
オキシナイトライドを水素生成系とする可視光水分解
h+
h+ e−
Visible light
I
−IO
3−H2O O2
H+ H2
Visible light
e−
O2 evolution photocatalyst
H2 evolution photocatalyst
Time / h
Amount of gas evolved / µmol
200
150
100
50
0
20 15 10 5 0
H2 O2
Under visible light irradiation (l> 420 nm)
WO3
TaON SrTiO3(Cr-doped)
R. Abe et al.
Chem. Commun. 2001; Chem. Phys. Lett. 2001;
J. Phys. Chem. B, 2005; Chem. Commun. 2005;
Chem. Phys. Lett. 2008; Chem. Lett. 2008;
Chem. Mater. 2009; J. Am. Chem. Soc. 2010
CaTaO2N BaTaO2N TaONPt/TaON + Pt/WO
3Collaborative works with Prof. Domen
オキシナイトライド光触媒による長波長利用
h+
h+ e−
Visible light
I
−IO
3−H2O O2
H+ H2
Visible light
e−
O2 evolution photocatalyst
H2 evolution photocatalyst
WO3 TaON
SrTiO3/Cr-doped
CaTaO2N BaTaO2N TaON
R. Abe et al.
Chem. Commun. 2001; Chem. Phys. Lett. 2001;
J. Phys. Chem.B, 2005; Chem. Commun. 2005;
Chem. Phys. Lett. 2008; Chem. Mater. 2009;
Chem. Commun. 2009; Langmuir 2010;
J. Am. Chem. Soc. 2010; ChemSusChem 2011; etc.
Ta3N5
TaON
BaTaO2N Visible light
Ta3N5
800 700 600 500 400 300
WO3 UV
TiO2
TiO2 WO3 TaON Ta3N5 BaTaO2N
混合アニオン化合物の課題:安定性の欠如
29
O-2p
ex. TaON, BiOX
Potential
X-np VB
e-
Red.
Ox.
O
2H
2O
CB
N
2, X
230
安定性の高い混合アニオン化合物光触媒の開発
H. Fujito, H. Kunioku et al., J. Am. Chem. Soc., 2016, 138, 2082
Collaborative works with Prof. H. Kageyama
200 150 100 50
0
16 12 8 4 0
Time of irradiation / h
Amount of gas evolved / µmol
H2
O2 Under visible light (λ > 410 nm)
O
HO O
H
H+
h
+e
-H Ru/SrTiO
3:Rh
h
+e
-Bi
4NbO
8Cl
Cl-3p O-2p
Bi-6p Nb-4d
Fe
3+Fe
2+Cl-3p O-2p h
+JST-CRERST D3
Bi4NbO8X (X=Cl, Br) の光吸収
31 1.0
0.8 0.6 0.4 0.2
0.0
600 550
500 450 400
1.0 0.8 0.6 0.4 0.2 0.0
450 400 350 300
BiOBr BiOCl
Bi4NbO8Cl Bi4NbO8Br
Normalized Kubelka-Munk
Wavelength / nm
3.0x109
2.5
2.0
1.5
1.0
0.5
0.0 C–2 / F–2 cm4
-0.7 -0.6 -0.5 -0.4 -0.3
Potential (V vs Ag/AgCl) 0.1 M Na2SO4 aq.
(pH2.0)
Potential (V vs Ag/AgCl) BiOCl
BiOBr Bi4NbO8Cl
Bi4NbO8Br –0.63
–0.48–0.42 –0.56
Mott-Schottky plot
Lin, X. et al., J.Mater. Chem. 2007, 17, 2145
Bi
4NbO
8X Cl
Bi4NbO8X (X=Cl, Br) の推定バンドレベル
32
Bi
4NbO
8Cl BiOCl, Bi
4NbO
8Br 3.42 eV
Potential / V NHE, pH=2
0
+1.0
+3.0 +2.0 –1.0
H+/H2
O2/H2O –0.43
2.99
2.39 eV
–0.28
2.11
2.48 eV
–0.22
2.26
2.78 eV
–0.36
2.42 CB
VB
Cl-3p +
O-2p Br-4p
Bi
4NbO
8ClBi
4NbO
8BrBiOCl BiOBr
O-2p+
3.0x109
2.5
2.0
1.5
1.0
0.5
0.0 C–2 / F–2 cm4
-0.7 -0.6 -0.5 -0.4 -0.3
Potential (V vs Ag/AgCl) 0.1 M Na2SO4 aq.
(pH2.0)
Potential (V vs Ag/AgCl) BiOCl
BiOBr Bi4NbO8Cl
Bi4NbO8Br –0.63
–0.48–0.42 –0.56
Mott-Schottky plot
DFT計算(状態密度)
33 14
12 10 8 6 4 2 0
8 6 4 2 0 -2 -4 -6 14 12 10 8 6 4 2 0
8 6 4 2 0 -2 -4 -6
BiOCl
BiOBr
Energy / eV
Total Bi O Br 10
8 6 4 2
0
8 6 4 2 0 -2 -4 -6
Total Bi (total) O (total) Cl (total)
Total Bi O Cl 10
8 6 4 2
0
8 6 4 2 0 -2 -4 -6
Total Bi (total) O (total) Cl (total)
DOS (electrons / eV)DOS (electrons / eV)
CB
CB VB VB
80
60
40
20
0
-6 -4 -2 0 2 4 6
Energy / eV 80
60
40
20
0
-6 -4 -2 0 2 4 6
Total Bi OCl Nb
Bi
4NbO
8Br Bi
4NbO
8Cl
Total Bi OBr Nb
DOS (electrons / eV)DOS (electrons / eV)
DFT計算(状態密度:VB付近)
34 14
12 10 8 6 4 2 0
-6 -5 -4 -3 -2 -1 0 1
14 12 10 8 6 4 2 0
-6 -5 -4 -3 -2 -1 0 1
BiOCl
BiOBr
Energy / eV Total Bi O Br 10
8 6 4 2
0
8 6 4 2 0 -2 -4 -6
Total Bi (total) O (total) Cl (total) Total Bi O Cl 10
8 6 4 2
0
8 6 4 2 0 -2 -4 -6
Total Bi (total) O (total) Cl (total)
DOS (electrons / eV)
Cl3p (Br4p) O2p
DOS (electrons / eV)
80
60
40
20
0
-6 -4 -2 0
80
60
40
20
0
-6 -4 -2 0
Energy / eV
Bi
4NbO
8Br
Bi
4NbO
8Cl
TotalBiO Cl Nb
Total Bi O Br Nb
O2p
DOS (electrons / eV)DOS (electrons / eV)
各酸ハロゲン化物の推定バンド構造:酸化物との比較
–0.31
O-2p
+3.11
Cl-3p
BiOCl
–0.22
O-2p
+2.54
CB
BiOBr
Br-4p Cl-3p
O-2p –0.16
+2.23
Bi
4NbO
8Cl
Br-4p O-2p
–0.10
+2.38
Bi
4NbO
8Br
VB
Bi Bi
Bi Bi
O-2p
+3.0
ex. TiO
2O-2p
+0.1
~ +2.5 Bi-6s
B.G.
2.4–2.5 eV
V-3d Bi-6p
1) Kudo, A. et al., J. Am. Chem. Soc. 1999, 121, 11459.
2) Cooper, J. K.,et al., Chem. Mater. 2014, 26, 5365.
Ti-3d
Potential / VNHE, pH=0
DOS
ex. BiVO
4 1-3Bi : [Xe] 4f
145d
106s
26p
3Bi4NbO8ClにおけるBiのPDOS
4 3 2 1 0
-6 -5 -4 -3 -2 -1 0 1
4 3 2 1 0
-6 -5 -4 -3 -2 -1 0 1
Bi-6s
Bi-6p
PDOS (electrons / eV)PDOS (electrons / eV)
Energy / eV
Bi1 Bi2 Bi3 Bi4
Bi-6s Bi-6p
Bi1 Bi2 Bi3 Bi4
Revised lone pair model (by Walsh et al.)
37 4458 Chem. Soc. Rev.,2011,40, 4455–4463 This journal iscThe Royal Society of Chemistry 2011 it does not form in others. The diversity of crystal structures
adopted by lone pair systems is highlighted in Table 1. The concept of an electron lone pair as a chemically inert species remains popular due to its ability to explain the distorted structures often observed in these materials, but it is unsatis- factory in its generality.
2.2 Revised model
To understand the nature of lone pairs it is instructive to begin with a discussion of the interactions that occur in undistorted structures for these materials. A quantum mechanical analysis, at the level of density functional theory (DFT),14,15of the electronic structure of PbO16,17and SnO18,19in the CsCl structure, the undistorted parent of the litharge structure they adopt, shows that thes2electrons are certainly not chemically inert. They interact strongly with the anionpstates in the valence band giving rise to bonding and anti-bonding states (Fig. 2), which appear at the bottom and top of the upper valence band, respectively. The filleds2electrons of the cation donotform a non-bonding electron pair. So why does this interaction lead to the formation of distorted structures?
The formation of a distortion in the lattice allows the unoccupied cationpstates to hybridize with the anti-bonding states, resulting in a stabilisation of the occupied electronic states (Fig. 2). In the absence of a crystal distortion, the interaction of the cationporbitals has no net stabilising effect;
the interaction is composed of both positive and negative wavefunction overlap, which is forbidden by the crystal symmetry.
However, by distorting the lattice, the interaction becomes symmetry allowed and the orbital stabilisation is accompanied by an asymmetric electron density that is projected into the structural void. The asymmetric electron density has the familiar lone pair distribution, but is in fact a stabilized anti- bonding interaction between the electronic states of both the cation and anion.
Subsequent studies comparing PbO with PbS20and SnO with SnX {X = S, Se, Te}21have shown that computations
based on quantum mechanics not only predict if a directional lone pair will form, but also explainwhylone pairs form in some materials and not in others. The relative energy of the cationsand anionpstates is critical to the formation of stereochemically active lone pairs. Since the cationpstates interact with the anti-bonding levels, it is vital for the cation on-site hybridisation that the anti-bonding levels have a strong component of the cationsstates. If there is a substantial cation spresence, then the mixing of the cationpstates can result in a strong stabilisation of the anti-bonding state. If, however, the anti-bonding states have only a weak contribution from the cation sstates, then the stabilisation will be significantly weaker. The electronic stabilisation must compensate for the reduced coordination in the distorted structures, and hence materials in which the anti-bonding states have only a weak cationscomponent will not form stereochemically active lone pairs; this is the case for most metal chalcogenides as shown in Table 1b.
The formation of stereochemically active lone pairs (distorted crystal structures) is therefore dependent on the strength of the interaction between the cationsstates and the anionpstates, and hence on their relative energies. The closer they are in energy, the stronger the interaction and the more cation states are present in the upper valence band, leading to an active lone pair effect. In fact, the cationsstates in these materials are lower in energy than the anionpstates and hence the most robust (with respect to formation of undistorted structures) lone pairs are found for oxides such as PbO, SnO, Bi2O3, and Sb2O3,i.e.those with oxygen anions in which the pstates are relatively low in energy. The corresponding atomic orbital energies are summarised in Fig. 4b. In moving down group 16 from oxygen to sulfur, selenium and tellurium, the anionpstates become higher in energy: as calculated at the DFT level of theory22the orbital energies are!9.0 eV (O);
!7.0 eV (S);!6.5 eV (Se);!5.9 eV (Te);!5.6 eV (Po).
It should be noted that the largest increase is observed between O 2pand S 3p, and this is where the transition from distorted to symmetric structures generally occurs. The interaction of the anion p states with the cation s states is reduced significantly for heavier anions, leading to weaker on-site hybridisation of the cationsandpstates and weaker lone pairs. For the case of PbS, the sulfur anion 3pstates are already too high in energy to maintain the stereochemically active lone pair due to the extremely low energy of the Pb 6sstates arising from relativistic effects, while for Sn the 5sstates are higher in energy and the lone pair is maintained for SnS and SnSe. Tellurium has too weak an interaction with Sn 5sto form a lone pair distortion in its ground-state structure.
Waghmareet al.23explored the effect of anionp–cations overlap in the distortion of the rocksalt structured chalco- genides of Ge, Sn and Pb, which follow the same trends discussed above. Similar arguments can also be made for the case of bismuth, with Bi2O3 and Bi2S3 showing stereo- chemically active lone pairs,24while Bi2Se3and Bi2Te3do not, and for antimony, with Sb2X3{X = O, S, Se} displaying stereochemically active lone pairs and Sb2Te3not. In fact for the layered crystal structure adopted by Sb2Te3, Bi2Se3and Bi2Te3, the anionic lone pair becomes dominant.25 Fig. 2 Illustration of the orbital interactions that lead to lone pair
formation in PbO (upper panel) and the corresponding energy level diagram (lower panel).
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Walsh, A. et al., Chem. Soc. Rev., 2011, 40, 4455-4463.
Bi 6s Bi 6p
Anti-bonding
Bonding
O 2p
zO-2p Bonding
Pb
2+: [Xe] 4f
145d
106s
2Bi
3+: [Xe] 4f
145d
106s
2Revised lone pair model for Bi4NbO8Cl
38
-10
-5 0 5
E n e rg y / e V
Density of states
Bi-6s Bi-6p
Ta-5p O-2p Cl-3p
Bi-6s + O-2p Bi-6p
Bi-6s
O-2p
Kunioku et al., J. Mater. Chem. A, 2018, DOI: 10.1039/C7TA08619A Kato et al., J. Am. Chem. Soc. 2017, DOI:10.1021/jacs.7b11497
シレンアウリビリアス系の特異なバンド構造
39 Scaife D. E. Scaife, Solar Energy, 25(1980) 41
d0 d10 d
WO3
2.6 eV
Potential / V SHE, pH=0
0 +1.0
+3.0
Bi
4NbO
8Cl +2.0
-1.0
C.B.
V.B.
H+/H2
O2/H2O
2. eV
–0.162.23
Band gap / eV 1.0
0.8 0.6 0.4 0.2 0
−0.2
−0.4
−0.6
−0.8
−1.0
Flat band potential / V vs. SHE
SrNbO6
Sr0.5Ba0.5Nb2O6
Ba0.5La0.2Nb2O6
BaNb2O6
MgTi2O5
ZnNb2O6
Ba6Ti2Nb8O30
Ba0.8Ca0.2TiO3
LaNbO4
ZnO KNbO3
Nb2O5
BaSnO3
SnO2
CdIn2O4
In2O3
Ba0.67Ca0.33Nb2O6
CaTiO3
NiNbO6
NbO2
MgTiO3
SrTiO3
TiO2 TiNb2O7
WNb2O8
CrTi2O7
FeNbO4
Cd2SnO4
CdO FeTiO3
Fe2TiO5
Sr2FeNbO6
FeTaO4
FeTa2O6
Sr0.5Ba0.5TiO3
BaTiO3
CrNbO
4
U3O8
Fe2O3
2.0 2.5 3.0 3.5 4.0
La2Ti2O7
WO3
Bi
4NbO
8Cl
O-2p
O-2p
Photocatalytic H 2 or O 2 evolution on Bi 4 NbO 8 Cl
40
UV light (λ > 300 nm) Visible light (λ > 400 nm) 2.0
1.5
1.0
0.5
0.0 Amount of H2 evolved / µmol
18 15 12 9 6 3 0
Time of photoirradiation / h Potential / V
vs. SHE, pH=2
0 +1.0
+3.0 Bi4NbO8Cl +2.0
-1.0
C.B.
V.B.
H+/H2
O2/H2O 2. eV
–0.28
2.11 Amo
unt of evolved O2/ µmol Amount of evolved H2/ µmol
Irradiation time / h Irradiation time / h
H2evolution from MeOHaq. O2evolution from Fe3+or Ag+aq.
40
30
20
10
0
8 6 4 2 0
Under visible light (l> 410 nm)
AgNO3aq.
FeCl3aq.
光触媒活性評価〜Fe3+を電子受容体とする酸素生成反応〜
41 70 60 50 40 30 20
50
40 30 20 10 0
Amount of gas evolved/µ mol
8 6
4 2
0
Time/h BiOBr
Bi4NbO8ClBi4NbO8Br
Am o u n t o f O
2ev ol ved / μm o l
Time / h 2θ / degree (Cu Kα)
Bi4NbO8Cl Bi4NbO8Cl (After)
Bi4NbO8Br Bi4NbO8Br(After)
BiOBr BiOBr (After)
BiOClIn te n si ty / a . u .
λ > 400 nm 5 mM FeCl3aq.
FeCl3 ( )
Photocatalyst 0.1 g 5 mM FeCl3aq. 250 mL
(pH2.4)
BiOBr BiOCl
Bi4NbO8ClをO2生成系とするZスキーム可視光水分解
42 e-
h+
H+ H2 e-
h+
Fe3+
Fe2+
H2O O2
Bi
4NbO
8Cl
Ru/SrTiO
3:Rh
1)Am o u n t o f O
2ev ol ved / μm o l
Time / h H
2O
2Bi4NbO8Cl 0.1 g, Ru/SrTiO3:Rh 0.15 g FeCl32mM (pH 2.4)
2 mM FeCl3aq.
λ > 400 nm
Bi
4NbO
8Cl Z
200
150
100
50
0
16 12 8
4 0
Without redox
1) Konta, R.,et al. J. Phys. Chem. B2004, 108, 8992-8995.
H. Fujito, H. Kunioku et al., J. Am. Chem. Soc., 2016, 138, 2082
可視光水分解に向けた新たな材料設計指針
O-2p
ex. TaON, BiOX
Potential
X-np VB
e-
Red.
Ox.
O
2H
2O
CB
N
2, X
2Sillen-Aurivillius
Cl-3p O-2p
CB
VB
e-
O
2H
2O
ex. Bi
4NbO
8X
Red.
Ox.
Bi-6s