N-Channel JFET 25 V, 20 to 40 mA, 40 mS, Dual CPH6

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DATA SHEET www.onsemi.jp

July, 2022 − Rev. 1 1 Publication Order Number:

CPH6904JP/D

N-Channel JFET

25 V, 20 to 40 mA, 40 mS, Dual CPH6

CPH6904

長

• CPH6 に J−FET を 2 したタイプであり、

がにアップできる

• CPH6904は、CPH3910#$のチップを2'()ケースに- .したものである

• これはフリーのデバイスです

製とにう

• パッケージ2 : CPH6

• JEITA, JEDEC : SC−74, SOT−26, SOT−457

• 456789 : 3,000 pcs./reel

^(T

A

= 25 ° C)

記項

V

DSX ドレイン・ソース電圧

25 V V

_GDS ゲート・ドレイン電圧

−25 V

I

_G ゲート電流

10 mA

I

_D ドレイン電流

50 mA

P

_D 許容損失

1 unit 400 mW

P

_T 全損失

700 mW

T

_ch チャネル温度

150 °C

T

_stg 存周囲温度

−55 ~ +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(

参考訳

)

最大定格を超えるストレスは、デバイスにダメージをえる危険性があります。これらの定格値を超えた場合は、デバイスの機能性を損ない、ダメージが生じたり、信頼性に影響を及ぼす危険性があります。

MARKING DIAGRAM CPH6 CASE 318BD

Device Package Shipping

^†

ORDERING INFORMATION

CPH6904−TL−E CPH6

(Pb−Free) 3 000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1 2 3

6 5 4

ELECTRICAL CONNECTION

1 5

6 4

2 3

1 : Drain 1 2 : NC 3 : Drain 2 4 : Gate 2

5 : Source 1 / Source 2 6 : Gate 1

1P

LOT No.

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www.onsemi.jp 2

電 (TA

= 25°C)

記項

V

(BR)GDS ゲート・ドレイン降-電圧

I

G

= −10 mA, V

DS

= 0 V −25 V

I

GSS ゲートしゃ断電流

V

GS

= −10 V, V

DS

= 0 V −1.0 nA

V

GS

(off)

ゲート・ソースしゃ断電圧

V

_DS

= 5 V, I

_D

= 100 mA −0.6 −1.2 −1.8 V

I

DSS ドレイン電流

V

DS

= 5 V, V

GS

= 0 V 20.0 40.0 mA

⎢y

fs

⎥

順0達アドミタンス

V

DS

= 5 V, V

GS

= 0 V, f = 1 kHz 30 40 mS

C

iss 入力容量

V

DS

= 5 V, V

GS

= 0 V, f = 1 MHz 6.0 pF

C

rss 帰還容量

V

DS

= 5 V, V

GS

= 0 V, f = 1 MHz 2.3 pF

N

F 雑音指数

V

DS

= 5 V, V

GS

= 0 V, f = 100 MHz 2.1 2.8 dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(参考訳)

製品パラメータは、特別な記述が無い限り、記載されたテスト条8に対する電気的特性で示しています。異なる条8;で製品動<を行った時には、電気的特性で示している特性を得られない場合があります。

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www.onsemi.jp 3

電の !"

図 1.

I

_D

− V

_DS

0 0

V

_DS

,

ドレイン・ソース電,

(V) I

D

,

ドレイン電-

(mA)

図 2.

I

_D

− V

_DS

図 3.

I

_D

− V

_GS 図 4.

I

_D

− V

_GS

図 5. X

y

_fs

X − I

_D

0.5 1.0 1.5 2.0

5 10 15 20 30

V

_GS

= 0 V

0 0

V

_DS

,

(V) I

D

,

ドレイン電-

(mA)

2 4 6 8 10

5 15 25 30 40

0 −2.0

V

_GS

,

ゲート・ソース電,

(V) I

D

,

ドレイン電-

(mA)

−1.5 −1.0 −0.5 0

5 10 15 25 30

0.5 20

I

_DSS

= 40 mA V

DS

= 5 V

V

_GS

,

ゲート・ソース電,

(V) I

D

,

ドレイン電-

(mA)

T

_A

= −25 ° C 25 ° C

75°C

図 6. X

y

_fs

X − I

_DSS

10 I

_DSS

,

ドレイン電-

(mA)

10

² ³ ⁵ ⁷

100

7

5

3

2

1.0 I

_D

,

ドレイン電-

(mA)

10

² ³ ⁵ ⁷

100

10 X y

fs

X ,

(mS) 100

7 5 3 2

V

DS

= 5 V f = 1 kHz I

DSS

= 30 mA 25

−0.2 V

−0.4 V

−0.6 V

−0.8 V

−1.0 V

10 20

35 V

_GS

= 0 V

−0.2 V

−0.4 V

−0.6 V

−0.8 V

−1.0 V

30 mA

20 mA 35

45 50

40 0 −2.0

−1.5 −1.0 −0.5 0

5 10 15 25 30

0.5 20

35 45 50

40 V

DS

= 5 V

7 5 3 2

1.0

2 3 5 7

V

DS

= 5 V V

GS

= 0 V f = 1 kHz

X y

fs

X ,

(mS)

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www.onsemi.jp 4

電の !"

(つづき)

図 7.

V

_GS

(off) − I

_DSS

I

_DSS

,

ドレイン電-

(mA) V

GS

(off),

ゲート・ソースしゃ>電,

(V)

図 8.

C

_iss

− V

_DS

図 9.

C

_rss

− V

_DS 図 10.

P

_D

, P

_T

− T

_A

V

_DS

,

(V) C

iss

,

BCD量

(pF)

1.0 V

_DS

,

(V) C

rss

,

E還D量

(pF)

10 T

_A

,

FGHI

( 5 C) P

D

, P

T

,

許DJK

(mW)

10

² ³ ⁵ ⁷

100 1.0 10

7 5 3 2

1.0 10

² ³ ⁵ ⁷

100

10

7

5

3

2

1.0

7

5

3

2

1.0

² ³ ⁵ ⁷

10

² ³ ⁵ ⁷

100

500 0 20 160

0.1

7 5 3 2

V

_DS

= 5 V I

_D

= 100 mA

2 3 5 7

400 300 200 100

0 40 60 80 100 120 140

V

_GS

= 0 V f = 1 MHz

V

_GS

= 0 V f = 1 MHz

1unit P

_T

600

700

800

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CASE 318BD CPH6 ISSUE O

DATE 30 NOV 2011

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON65440E DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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